A Guide to the Russian Academy of Sciences - University of Texas ...

Alferov, Zhores I., D. PM. S. Born in 1930. Russian physicist. He has been an
academician of the General Physics and Astronomy Department of the AN SSSR
and the RAS since 1979. In 1963, he proposed that heterostructures be used for
semiconductor lasers. The CO2 gas dynamic laser that resulted was proposed by
Prokhorov and V. K. Koniukhov in 1967 and built in 1970. Since 1968, he has
been Chief of the Contact Phenomenon in Semiconductors laboratory of the A. F.
Ioffe Physical Technical Institute. In 1984, he was awarded the USSR State Prize
for his work--with others--on "Isoperiodic Heterostructures of Multi-component
(Quartenary) Solid Solutions of the Semiconductor Compounds A3B5," published
from 1971-1981. In December 1987, he was made Director of the Ioffe Physical
Technical Institute. In April 1989 he became Chairman of the St. Petersburg
Scientific Center and was elected a member of the Presidium of the academy. (GSE,
31, p. 318.)
Arbatov, Georgii A., D. Hist. S. Born in 1923 in Kherson. Russian historian and
economist. Elected member of the Academy Presidium in 1988. Corresponding
member, 1970; academician, 1974--of the Economics Department of the Academy.
Academician of the new department, Problems of World Economics and
International Relations, since August 1988. He graduated from the Moscow Institute
of International Relations in 1949. From 1949 to 1962, he worked for the Foreign
Literary Publishing House and for several important journals. From 1962 to 1964,
he was Head of a section of the Institute of World Economics and International
Relations of the Academy. Since 1967, he has been Director of the USA and Canada
Institute in Moscow. The Institute of the United States was created in 1968, and included
research sectors in the academy dealing with North American concerns. In
1974, the USA Institute was renamed the Institute of the USA and Canada, with a
Canadian section being created at that time. Its scholars research the history,
international relations, economic policy, and sociological and social composition of
the USA and Canada. In 1992, the institute had a staff of 254 researchers that
included 34 holders of the doctoral and 150 holders of candidate degrees. Its staff
includes one academician and one corresponding member of the RAS. His works
are on foreign policy and international relations. (GSE 30, p. 16.)
Basov, Nikolai G., D. PM. S. Born in December 1922 in Voronezh. Elected member of
the Presidium of the Academy in 1967. Since l966, academician of the General
Physics and Astronomy Department of the Academy. He is one of the founders of
quantum radio physics. He graduated from the Moscow Engineering Physics
Institute in 1950. Since 1963, he has been the Chief of the Quantum Radio Physics
Division of the P. N. Lebedev Physics Institute. He holds the Nobel Prize in
Physics (1966) for fundamental work in the field of quantum electrodynamics. From
l973 to December 1988, he served as Director of the P. N. Lebedev Physics Institute
in Moscow, the oldest and largest institute of its kind in Russia. Among the topics of
research at the institute are lasers, quantum radio physics, nonlinear optics, spectroscopy,
plasma physics, theoretical astrophysics, particle physics, and theoretical
biophysics. Since l976, he has been Vice Chairman of the Executive Council of the
World Federation of Scientific Workers. Since l978, he has served as Chairman of
the Presidium of the Society for Knowledge in Moscow. Basov was the first to
point out the possibility of using semiconductors in quantum electronics. From 1957
to 1961, he and his co-workers developed methods for fabricating semiconductor
lasers. From 1963, he headed the Quantum Radio Physics Division of the P. N.
Lebedev Physics Institute. The first gallium arsenide semiconductor laser built in
Russia was made in the B. M. Vul Laboratory. He received the Lenin Prize in 1959
and the Nobel Prize in 1964. He was one of Prokhorov’s colleagues and
collaborators. (GSE vol. 3, p. 58; vol. 11, p. 588; vol. 16, p. 457; vol. 21, p. 257;
vol. 30, p. 146; and vol. 31, p. 318.)
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