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Mitsubishi Electric GaAs Devices Catalogue

Mitsubishi Electric GaAs Devices Catalogue

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<strong>GaAs</strong> DEVICES GENERAL CATALOGMITSUBISHI <strong>GaAs</strong> solutionsfor communication networksin the information era.BS/CSMAP FOR SELECTION1HT/MMDS/FRACATVMultimediaNetworkPRODUCTSAPPLICATIONPACKAGE379PDC/GSM/CDMADirectBroadcastingMultimedia NetworkFeaturesWe provide a variety of solutions to<strong>GaAs</strong> devices, from satellitecommunication systems to cellularhandset applications.


MITSUBISHI <strong>GaAs</strong> devices: The best solutionfor realizing the information era.Communication networks, such as high speed Internet,video-on-demand and high-speed data communcation,are developing rapidly.We are ready to offer the best solution to the systemsfor realizing the information era by providing a varietyof <strong>GaAs</strong> products designedfor satellite communication systemsto base stations and cellularhandset applications.<strong>GaAs</strong> FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERSMAP For SELECTIONNoise Figure NF (dB) at 12GHz0.51.01.52.02.53.0ApplicationMICRODISC CERAMICPACKAGEfor CONSUMER USENote : MGF4xxx=HEMT MGF1xxx=MES FETMGF4953AMGF4954AGD-4 GD-16 GD-27 GD-30GD-9MGF1303BMGF1302MGF1908AMGF1907ALEADLESS CERAMICPACKAGEfor CONSUMER USEDBS Down ConverterTVRO ReceiverSatellite Communication4-Pin MINIMOLDPACKAGEfor CONSUMER USEMGF4931AMMICRODISC CERAMICPACKAGEfor INDUSTRIAL USEMGF1403BRadio Link SystemSatellite CommunicationSpace Craft<strong>GaAs</strong> HYBRID IC&MMICPDCN-CDMAW-CDMAfrequency(GHz)2.01.51.00.51.429-1.453GHzFA012530.893-0.958GHzFA012521.92-1.98GHzBA012240.887-0.925GHzBA012230.824-0.849GHzBA012411.92-1.98GHzBA01238BA012430.83-0.84GHzBA01237ApplicationHandheld phoneHBTHEMT1


<strong>GaAs</strong> FET FOR HIGH POWER DISCRETEFreq.(GHz)4238MGF0912AMGF0909AGF-7~L/S/C Band~X/Ku Band~8 ~14.5MGF0915AMGF0911AMGF0907BMGF0910AMGF0906BMGF0952PGF-21Output Power (dBm)34302622MGF0905AMGF0904AGF-50MGF0921AMGF0920AMGF0919A/0913AMGF0918AMGF0917AMGF0916AMGF0951PMGF0953P ★★GF-55MGF2445AMGF2430AMGF2415AMGF2407AMGF1954AGF-17MGF1953A18MGF1952AGD-2714MGF4851AMGF1951A10ApplicationRadio Link SystemSatellite Communication★★:Under developmentINTERNALLY MATCHED <strong>GaAs</strong> FET SERIES FOR L/S MICROWAVE-BAND HIGH POWER HIGH AMPLIFIERSPOWER AMPLIFIERSFreq.(GHz)5044L/S Band C Band X Band KU Band1-2/2-4 4-8 10.7-11.7 14.0-14.5MGFS52BMGFL/S48V-AMGFL/S45V-AGF-49GF-47GF-51MGFC47VMGFC45VMGFC44VGF-53GF-38MGFK44AGF-38Output Power (dBm)42403836MGFC42VMGFC40VGF-18GF-8GF-8GF-27MGFK41AMGFC39V MGFX39V MGFK39VMGFC36V-AMGFX36VMGFK38AMGFK37VMGFK35VGF-8GF-27GF-1434MGFK33V32GF-1130MGFK30VMGFK25VApplicationBase StationRadio Link SystemMobile TelephoneRadio Link SystemRadar SystemSatellite Communication2


<strong>GaAs</strong> FET SERIES FOR MICROWAVE- BAND LOW-NOISE AMPLIFIERSType NumberNoise Figure(dB)Associated Gain(dB)Typ. Max. Min. Typ.Frequency(GHz)Drain-SourceVoltage(V)Drain Current(mA)PackageOutlineMGF13022.7MGF1303B2MGF1403B1.8MGF1907A2.7MGF1908A2MGF4951A0.40MGF4952A0.60MGF4953A0.40MGF4954A0.60MGF4931AM0.60MGF4934AM ★★ 0.60MGF4953B ★★ 0.55Ta=25°C-----0.500.800.500.800.800.800.80-----11.011.012.012.010.011.59.0910.510.5910.512.012.013.013.011.512.510.51212121212121212121212203333322222221010101010101010107.51010GD-4GD-4GD-9GD-16GD-16GD-26GD-26GD-27GD-27GD-30GD-30GD-27★★: Under development<strong>GaAs</strong> FET SERIES FOR MICROWAVE- BAND HIGH-POWER AMPLIFIERS(Discrete <strong>Devices</strong>)PRODUCT LISTType NumberMGF0904AMGF0905AMGF0906BMGF0907BMGF0909AMGF0910AMGF0911AMGF0912AMGF0913AMGF0915AMGF0916AMGF0917AMGF0918AMGF0919AMGF0920AMGF0921AMGF0951PMGF0952P ★MGF0953P ★★MGF1951AMGF1952AMGF1953AMGF1954AMGF2407AMGF2415AMGF2430AMGF2445AMGF4851ATa=25°COutput Power at 1dB Gain3rd Order IMCompression(dBm) Output Power Linear Power Distortion(dBc)Min. Typ.(dBm) Gain(dB)Min. Typ.--35.538.5373740------------111518212326293112--3740383841------------1317202324.527.530.53214.52633-----40.529.5352123252830313136.528---------1171081010109.51113171918171615111118754376.55.55.59---------------------------------------------42-42----------Power Added FrequencyEfficiency(%) (GHz)40404037453740384850303845374540505040----30292720-1.651.652.32.32.32.32.31.91.91.91.91.91.91.91.91.92.152.152.151212121214.514.514.51212Drain-SourceVoltage(V)881010101010101010610101010101010103346101010102.5Drain Current(A)0.20.81.22.41.31.32.62.60.20.80.10.0750.150.30.40.50.20.70.150.030.060.10.10.0750.150.30.450.025Thermal Resistance(°C/W)Typ.-------2.320520553517131120514---------Max.--6.54-64.5330830755025181525620----100603015-PackageOutlineGF-7GF-7GF-21GF-21GF-7GF-21GF-21GF-7GF-50GF-50GF-50GF-50GF-50GF-50GF-50GF-50GF-55GF-55GF-55GD-27GD-27GD-27GD-27GF-17GF-17GF-17GF-17GD-27★: New product ★★ : Under development3


INTERNALLY MATCHED <strong>GaAs</strong> FET SERIES FOR L/S BAND HIGH POWER AMPLIFIERSOutput Power at 1dB GainCompression(dBm)Type NumberMin. Typ.MGFC36V3436MGFC39V3436MGFC42V3436MGFC44V3436MGFC45V3436AMGFL45V1920AMGFL48V1920MGFS44V2735MGFS45A2527BMGFS45V2123AMGFS45V2325AMGFS45V2527AMGFS45V2735MGFS48B2122MGFS48V2527MGFS52BN2122A ★ 353841.5434444-434444444444---3739.542.5444545-444545454545---Output Power(dBm)------47------474750.8Linear PowerGain(dB)11101211111210111111111111119113rd Order IMDistortion(dBc)Min.-42-42-42-42-42-42--42-42-42-42-42-42---Typ.-45-45-45-45-45-45--45-45-45-45-45-45---Power Added FrequencyEfficiency(%) (GHz)323237363645453640454545364845483.4~3.63.4~3.63.4~3.63.4~3.63.4~3.61.9~2.01.9~2.02.7~3.52.5~2.72.1~2.32.3~2.52.5~2.72.7~3.52.172.5~2.72.17Drain-SourceVoltage(V)10101010101012101010101010121212Drain Current(A)1.22.44.56.486.546.46.56.56.56.58244Thermal Resistance(°C/W)Typ.53--0.8-11----0.8110.55Max.63.51.91.211.51.41.21.41.51.51.511.21.40.8PackageOutlineGF-8GF-8GF-18GF-38GF-38GF-51GF-47GF-38GF-51GF-51GF-51GF-51GF-38GF-47GF-47GF-49✽: Communication gradeTa=25°C★: New productGD-4GD-9GD-16GD-26GD-27GD-30GF-7GF-17GF-21GF-38GF-47GF-49GF-50GF-51GF-554


PRODUCT LIST5INTERNALLY MATCHED <strong>GaAs</strong> FET SERIES FOR C BAND HIGH POWER AMPLIFIERSINTERNALLY MATCHED <strong>GaAs</strong> FET SERIES FOR C BAND HIGH POWER AMPLIFIERSTa=25°C★★ : Under developmentMin.Typ.Linear PowerGain(dB)Min.Typ.Power AddedEfficiency(%)Frequency(GHz)Drain-SourceVoltage(V)Drain Current(A)PackageOutlineType NumberOutput Power at 1dB GainCompression(dBm)3rd Order IMDistortion(dBc)Typ.Max.Thermal Resistance(°C/W)MGFC36V3742AMGFC36V4450AMGFC36V5258MGFC36V5867MGFC36V5964AMGFC36V6472AMGFC36V7177AMGFC36V7785AMGFC38V5867MGFC38V5964MGFC38V6472MGFC39V3742AMGFC39V4450AMGFC39V5258MGFC39V5867MGFC39V5964AMGFC39V6472AMGFC39V7177AMGFC39V7785AMGFC40V3742MGFC40V4450MGFC40V5258MGFC40V5964MGFC40V6472MGFC40V7177MGFC40V7785MGFC41V3642MGFC41V5964MGFC41V6472MGFC41V7177MGFC42V3742MGFC42V4450MGFC42V5258MGFC42V5867MGFC42V5964MGFC42V5964AMGFC42V6472MGFC42V6472AMGFC42V7785AMGFC44V3642MGFC44V4450MGFC44V5964MGFC44V6472MGFC45V3642AMGFC45V4450AMGFC45V5867MGFC45V5964AMGFC45V6472AMGFC47V5864MGFC47A4450MGFC47A7785 ★★3535353535353535373737383838383838383839.539.539.539.539.539394040404041.541.541.54141.541.541.541.54143434343444443.54444.5464645.737373636373736.536.538383839.539393939.539.539.539.540.540.540.540.540.5404041.541414142.542.542.542.542.542.542.542.542444444444545454545474746.710998.59887898988887769988776118.5879987887761010871097878.59.54.7-42-42---42-42-42-42--42-42-42-42---42-42-42-42-42-42--42-42-42-42-42-42-42-42-42-42---42-42-42-42-42-42-42-42-42-42-42--42-42---39-45-45---45-45-45-45--45-45-45-45---45-45-45-45-45-45--49-45-45-45-45-45-45-45-45-45---45-45-45-45-45-45-45---45-45--45-45---423332333030303029323231313030303028282732323230323232403332303232313131333031283535333136343533353540303.7~4.24.4~5.05.2~5.85.8~6.755.9~6.46.4~7.27.1~7.77.7~8.55.8~6.755.9~6.46.4~7.23.7~4.24.4~5.05.2~5.85.8~6.755.9~6.46.4~7.27.1~7.77.7~8.53.7~4.24.4~5.05.2~5.85.9~6.46.4~7.27.1~7.77.7~8.53.6~4.25.9~6.46.4~7.27.1~7.73.7~4.24.4~5.05.2~5.85.8~6.755.9~6.45.9~6.46.4~7.26.4~7.27.7~8.53.6~4.24.4~5.05.9~6.46.4~7.23.6~4.24.4~5.05.8~6.755.9~6.46.4~7.25.8~6.44.4~5.07.7~8.51.21.21.21.21.21.21.21.21.81.81.82.42.42.42.42.42.42.42.42.42.42.42.42.42.42.43.43.43.43.44.54.54.54.54.54.54.54.54.56.46.46.46.4888889.89.89.855-55555--------------3-----2.2-----1.6--------0.80.8-0.8-0.80.80.8666666665553.53.53.53.53.53.53.53.53.53.53.53.53.53.53.52.82.82.82.81.91.91.91.91.91.61.91.61.61.61.61.61.6111110.90.90.9GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-8GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-18GF-38GF-18GF-38GF-38GF-38GF-38GF-38GF-38GF-38GF-38GF-38GF-38GF-38GF-53GF-53GF-53101010101010101010101010101010101010101010101010101010101010101010101010101010101010101010101010101010GF-8 GF-18 GF-27 GF-53GF-11GF-14


INTERNALLY MATCHED <strong>GaAs</strong> FET SERIES FOR X/Ku BAND HIGH POWER AMPLIFIERSType NumberMGFK25V4045MGFK30V4045MGFK33V4045MGFK35V4045MGFK37V4045MGFK39V4045MGFK38A3745 ★★MGFK41A4045 ★MGFK44A4045 ★MGFX36V0717MGFX39V0717Output Power at 1dB GainCompression(dBm)Min. Typ.2329.53234.536.538.537404334.537.525303335.437.4393841443639Linear PowerGain(dB)775.55.54.54.576576Power AddedEfficiency(%)2524222017203025172826Frequency(GHz)14~14.514~14.514~14.514~14.514~14.514~14.513.75~14.514.0~14.514.0~14.510.7~11.710.7~11.7Drain-SourceVoltage(V)81081010101010101010Drain Current(A)0.150.350.71.22.42.41.5361.22.4Thermal Resistance(°C/W)Typ.------3.61.81.2--Max.4020104.53.53.542.21.55.53.5PackageOutlineGF-11GF-11GF-11GF-14GF-14GF-8GF-27GF-8GF-38GF-27GF-8✽: Communication gradeTa=25°C★ : New product ★★ : Under development<strong>GaAs</strong> HYBRID ICType NumberApplicationfrequency(MHz)Po(dBm) Vcc(V) Vref(V) Effi(%) Pin(dBm)PackageOutlineFA01252FA01253BA01241BA01223BA01224BA01237BA01238BA01243PDC800PDC1.5GN-CDMAN-CDMAN-CDMAW-CDMAW-CDMAW-CDMA893~9581429~1453824~849887~9251920~1980830~8401920~19801920~198030.629.827.527.527.026.526.526.53.63.53.53.53.53.53.53.4-2.3-2.52.852.852.852.852.852.8560604040424748464.55002-1-1-1GH-40GH-40GH-42GH-39GH-39GH-39GH-39GH-44<strong>GaAs</strong> HIGH POWER MODULEType NumberApplicationfL(GHz)fH(GHz)P1dB(dBm)Gp(dB) Vd(V) It(A) RemarksPackageOutlineMGFS40H2201GMGFS45H2201GMMDS CPEMMDS CPE2.52.52.72.74045212110103 ✽110 ✽2Pluse operationPluse operationGH-45GH-41✽1 Pout=31.5dBm✽2 Pout=34.5dBm6


Lineup for 12GHz -Band LNBBroadcast SatelliteLNBANTAVTVANTLow Noise Amp.MixerBS TunerVCRAudioTo Tuner1st Stage2nd StageIF Amp.LONoise Performance of LNB 1st Stage 2nd Stage Mixer0.8-1.0dB MGF4953A MGF4954A MGF4954A0.9-1.1dB MGF4953A MGF4931AM MGF4931AMAPPLICATION EXAMPLESLineup for Microwave Linksex:6.4~7.2GHzMicrowave Transmitter & Receiver UnitLNADown Conv.Indoor UnitHPAUp Conv.MGF1951A MGF2407A MGF2445A MGFC39V MGFC45V30W Power Amp. Chain-1dBm45dBmMGF1951A MGF2407A MGF2445A MGFC41V MGFC47A50W Power Amp. Chain-1dBm47dBmLineup for Satellite CommunicationVSAT14/12GHzMicrowave Transmitter & Receiver UnitLNADown Conv.HPAUp Conv.Indoor UnitMGFK25V MGFK25V MGFK25V MGFK33V MGFK38A6W Power Amp. Chain-2dBm9 9 8 7 738dBmMGFK25V MGFK30V MGFK33V MGFK41A MGFK44A25W Power Amp. Chain+8dBm9 8 7 7 5.044dBm7


Application NoteTytleDate<strong>GaAs</strong> Transistorsf=1.9GHzbandRF characteristics data of MGF0915A for Freq=1.85-1.95GHz bandMay./2005RF characteristics data of MGF0921A for Freq=1.85-1.95GHz bandMay./2005RF characteristics data of MGF0951P for Freq=1.85-1.95GHz bandMay./2005RF characteristics data of MGF0952P for Freq=1.85-1.95GHz bandMay./2005f=2.1GHzbandRF characteristics data of MGF0906B for Freq.=2.11-2.17GHz bandApr./2005RF characteristics data of MGF0907B for Freq.=2.11-2.17GHz bandApr./2005RF characteristics data of MGF0915A for Freq=2.11-2.17GHz bandMay./2005RF characteristics data of MGF0921A for Freq=2.11-2.17GHz bandMay./2005RF characteristics data of MGF0951P for Freq=2.11-2.17GHz bandMay./2005RF characteristics data of MGF0952P for Freq=2.11-2.17GHz bandMay./2005f=2.35GHz bandRF characteristics data of MGF0915A for Freq=2.3-2.4GHz bandMay./2005RF characteristics data of MGF0921A for Freq=2.3-2.4GHz bandMay./2005RF characteristics data of MGF0951P for Freq=2.3-2.4GHz bandMay./2005RF characteristics data of MGF0952P for Freq=2.3-2.4GHz bandMay./2005f=2.6GHzbandRF characteristics data of MGF0915A for Freq=2.5-2.6GHz bandMay./2005RF characteristics data of MGF0921A for Freq=2.5-2.6GHz bandMay./2005RF characteristics data of MGF0951P for Freq=2.5-2.6GHz bandMay./2005RF characteristics data of MGF0952P for Freq=2.5-2.6GHz bandMay./2005High Frequency <strong>Devices</strong> Naming System■<strong>GaAs</strong> FET(Discrete)MGF 1403 BX■Internally Matched <strong>GaAs</strong> FETMGF C 36 V 5964●Quality GradeX : IGXV : IGV■<strong>GaAs</strong> Hybrid ICFA 01 2 34●Freq. Band : L, S, C, X, K, Ku●Typical Output power in dBmex.36=36dBm=4W(typ.)●Internally Matched : V, A●Freq. Band in GHzex.5964=5.9~6.4GHz●Device Stracture : FA(FET), BA(Bipolar Transistor)●Freq. Band in GHz●Stage Number●Series Number8


GD/GFGD-4GD-94 MIN. 1.85±0.2 4 MIN.4 MIN. 4 MIN.4 MIN.1.85±0.24 MIN.1±0.20.5±0.150.5±0.151±0.24 MIN. 4 MIN.1±0.20.5±0.150.5±0.151±0.2PACKAGE OUTLINE1.15±0.30.1 +0.1-0.05GD-16φ1.8±0.2Unit:mm1.1±0.1 +0.1-0.05GD-261.8±0.2UP SIDE VIEW+0.202.15-0.10AUnit:mmSIDE VIEW4.0±0.21.85±0.20.5±0.154.0±0.21.85±0.21±0.22.15 +0.20-0.10A 01AB0.20±0.10.80±0.10.5±0.15(0.30)φ1.8±0.2BACK SIDE PATTERN2- (2.20)(2.30)A DIRECTION VIEW2-1.20±0.051.15±0.30.1 +0.1--0.056-R0.204-0.55±0.054-0.50±0.05Unit:mmUnit:mm9


GD/GFGD-27GD-30UP SIDE VIEW2.15+0.20-0.10ASIDE VIEW2.10±0.11.25±0.052.15 +0.20-0.10B 02EG0.30 +0.1-0.05(0.65) (0.60)0.40 +0.1-0.050.20±0.10.80±0.12.05±0.11.25±0.1(0.30)0.30+0.1-0.05 0.30 +0.1-0.050.11 +0.05-0BACK SIDE PATTERN(2.30)(0.65) (0.65)2-(1.02)2- (2.20)1.20±0.05A DIRECTION VIEW1.30±0.052-R0.2752-R0.204-0.55±0.050.49±0.05(0.85)2-0.50±0.15Unit:mmUnit:mmGF-7GF-821.0±0.31.65 0.1φ2.20.6±0.25.09.0±0.214.0( 4.4 +0-0.3 )0.651.9±0.4 2 MIN.2 MIN.4.5±0.42 MIN. 12.9±0.2 2 MIN.1.60.6±0.150.6±0.1510.717.0±0.212.0R1.60.2 0.12.6±0.211.3Unit:mmUnit:mm10


GFGF-11GF-1411.0±0.316.0±0.32 MIN.0.5±0.152 MIN.0.6±0.152 MIN. 6.5 +0.1-0.36.2±0.20.5±0.152-R0.95.12 MIN. 6.5 +0.1-0.39.00.6±0.15R1.255.59.2±0.213.0±0.22.4±0.40.1PACKAGE OUTLINE0.40.62.9±0.40.11.3±0.21.3±0.2GF-172.86.1±0.28.5±0.32-φ1.60.5 R0.252.5±0.22 MIN.2 MIN.0.10.60.81.8MAXUnit:mmUnit:mm0.11.1GF-18R1.252 MIN. 17.4±0.34.0±0.42 MIN.1.48.0±0.210.020.4±0.20.6±0.1524±0.313.4R1.20.12.4±0.215.8Unit:mmUnit:mmGF-21GF-2717.516.5±0.24 MIN.1.02 MIN.0.6±0.14 MIN. 6.352-R1.254.82 MIN. 9.7±0.12.52-R1.258.514.38.513.0±0.14.5MAX.9.41.02.263.2±0.40.21.150.11.8±0.151.10.110.0Unit:mm9.0Unit:mm11


GFGF-38GF-4720.4±0.22 MIN.2 MIN. 17.4±0.28.0±0.22.42.4±0.20.1±0.0524.0±0.30.6±0.1520.4±0.216.71.415.84.3±0.43.2±0.8 17.4±0.3 3.2±0.83.5±0.48.0±0.22.0±0.15 2.0±0.15 C1.06.015.224.0±0.316.40.115.22.4±0.2Unit:mm1.9Unit:mmGF-49GF-5030.4±0.2Gate MarkRound corner0.802.0±0.15 2.0±0.152.0mMin 17.4±0.8 2.0mMin8.0±0.210.04.002.00.84.200.30.252.4±0.20.134.0±0.34.5MaxGate Mark1.202.80.7Unit:mm0.62.5Unit:mmGF-51GF-5324.0±0.324±0.32.0 MIN. 17.4±0.2 2.0 MIN.8.0±0.220.4±0.20.6±0.152MIN.17.4±0.2 2MIN.8.0±0.22.40.7±0.1515.83.65±0.415.80.1±0.052.4±0.22.3±0.20.1±0.0520.4±0.216.74.7MAX.1.4Unit:mm1.3Unit:mm12


PACKAGE OUTLINE13GF/GHGF-550.89(0.60)4.503.40MGF0951PLot.No4.002.601.403.001.081.482.260.45GH-301.7max6.0±0.32.452.45x2=4.96.0±0.3(CDMA)GH-364.3±0.24.0±0.21.40max4.0±0.24.3±0.20.600.75GH-384.5±0.21.60max3.702.250.804.5±0.2GH-327.5±0.22.04.08.5±0.22.54.51.5(typ)GH-344.5 +0.3-0.21.5max4.5±0.20.6Unit:mmUnit:mmUnit:mmUnit:mmUnit:mmUnit:mm


GF/GHGH-39GH-40(PDC)0.801.40max1.5max4.0±0.24.5±0.22.253.700.600.754.0±0.24.5±0.2Unit:mmUnit:mmGH-41GH-4251.1±0.14-φ3.1±0.1 THRU23.8±0.511.9±13±0.0511.55±1φ0.45±0.224.55±134.55±145.55±157.1+0.5/-0.24.5±117.8±0.12.45±0.41.20MAX3.0±0.153.00±0.15(6.35)4.5±14.5±1Unit:mmUnit:mmGH-44GH-451.20MAX3.0±0.153.00±0.1515.230.027.22.54 2.54 2.54 4.017.621.072.5 3.6 3.4 2.3 3.4 (2.5)4.3Unit:mmUnit:mm14


CONTACT ADDRESSES FOR FURTHER INFORMATIONJAPANSemiconductors:Oversea Marketing Division<strong>Mitsubishi</strong> <strong>Electric</strong> Corporation2-2-3, Marunouchi, Chiyoda-Ku,Tokyo 100-8310, JapanPower Device Overseas Marketing DeptTelephone: (03) 3218-2468Facsimile: (03) 3218-2723High Frequency & Optical SemiconductorOverseas Marketing DeptTelephone: (072) 780-3835Facsimile: (072) 780-3839CHINAKeling <strong>Electric</strong> (Shanghai) Co., Ltd.29 Floor, Shanghai MAXDO CenterNo.8, Xing Yi Road, Hong Qiao,Shanghai 200336, ChinaTelephone: 21-5208-2030Facsimile: 21-5208-1830HONG KONG<strong>Mitsubishi</strong> <strong>Electric</strong>(H.K.)Ltd.Semiconductor Division41st Floor, Manulife Tower, 169<strong>Electric</strong> Road, North Point, Hong KongTelephone: 2510-0555Facsimile: 2510-9822TAIWAN<strong>Mitsubishi</strong> <strong>Electric</strong> Taiwan Co., Ltd.Semiconductor Department10th Floor, 88 Sec.6, Chung Shan NorthRoad, Taipei, TaiwanTelephone: 886-2-2831-9357Facsimile: 886-2-2833-9427AUSTRALIA<strong>Mitsubishi</strong> <strong>Electric</strong> Australia Pty. Ltd.Semiconductor Division348 Victoria Road,Rydalmere, NSW 2116, Sydney, AustraliaTelephone: (2) 9684-7777Facsimile: (2) 9684-7208U.S.A.United States - U.S. Headquarters<strong>Mitsubishi</strong> <strong>Electric</strong> and Electronics USA, Inc.Semiconductor Division5201 Great America Parkway Ste 332Santa Clara, CA 95054-1127Telephone: (408) 727-3111Facsimile: (408) 727-2689U.S. Regional/District Sales OfficesNORTHWEST<strong>Mitsubishi</strong> <strong>Electric</strong> and Electronics USA, Inc.Semiconductor Division5201 Great America Parkway Ste 332Santa Clara, CA 95054-1127Telephone: (408) 727-3111Facsimile: (408) 727-2689ROCKY MOUNTAIN<strong>Mitsubishi</strong> <strong>Electric</strong> and Electronics USA, Inc.Electronic Device GroupPO Box 273377Fort Collins CO 80527Telephone: (970) 669-4068Facsimile: (970) 669-4129NORTH CENTRAL<strong>Mitsubishi</strong> <strong>Electric</strong> and Electronics USA(Automotive Market Only)26935 Northwestern Highway ste 520Southfield MI 48035Telephone: (248) 357-8035Facsimile: (248) 357-8559SOUTHEAST<strong>Mitsubishi</strong> <strong>Electric</strong> and Electronics USA, Inc.Electronic Device Group2810 Premiere Parkway ste 400Duluth GA 30097Telephone: (770) 613-5852Facsimile: (770) 662-5208CANADACENTRAL & WESTERN CANADA<strong>Mitsubishi</strong> <strong>Electric</strong> Sales Canada, Inc.4299 14th AvenueMarkham, ON L3R OJ2 CanadaTelephone: (905) 475-7728Facsimile: (905) 475-1918PUERTO RICO<strong>Mitsubishi</strong> <strong>Electric</strong> and Electronics USA, Inc.Electronic Device Group2810 Premiere Parkway ste 400Duluth GA 30097Telephone: 678-258-4518Facsimile: 678-258-4519MEXICOWESTERN MEXICO<strong>Mitsubishi</strong> <strong>Electric</strong> and Electronics USA, Inc.Electronic Device Group20 Fairbanks, ste 181Irvine, CA 92618Telephone: 949-589-1725Facsimile: 949-589-1925GERMANY<strong>Mitsubishi</strong> <strong>Electric</strong> Europe B.V.German BranchGothaer Strasse 8D-4030 Ratingen 1, GermanyTelephone: 2102-486-0Facsimile: 2102-486-4140FRANCE<strong>Mitsubishi</strong> <strong>Electric</strong> Europe B.V.French Branch25, Boulevard des Bouvets92741 Nanterre Cedex, FranceTelephone: (33) 1 55 68 56 68Facsimile: (33) 1 55 68 57 39ITALY<strong>Mitsubishi</strong> <strong>Electric</strong> Europe B.V.Italian BranchMilano OfficeCentro Direzionale ColleoniPalazzo Perseo 2, Via Paracelso20041 Agrate Brianza, Milano, ItalyTelephone: 39-605 31 0Facsimile: 39-605 32 12SWEDEN<strong>Mitsubishi</strong> <strong>Electric</strong> Europe B.V.Scandinavian BranchHammarbacken 14S-19127 Sollentuna, SwedenTelephone: 8-625 10 00Facsimile: 8-625 10 33U.K.<strong>Mitsubishi</strong> <strong>Electric</strong> Europe B.V.U.K. Branch(Hatfield)Travellers Lane, HatfieldHerts, AL10 8XB, U.K.Telephone: 1707-276 100Facsimile: 1707-278 997EASTERN MEXICO<strong>Mitsubishi</strong> <strong>Electric</strong> and Electronics USA, Inc.Electronic Device Group8310 Capital of Texas Highway North,ste 260Austin, TX 78731Telephone: (512) 346-4200Facsimile: (512) 346-4434 HEAD OFFICE: 2-2-3, MARUNOUCHI, CHIYODA-KU, TOKYO 100-8310, JAPANKeep safety first in your circuit designs!¡ <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead topersonal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammablematerial or (iii) prevention against any malfunction or mishap.Notes regarding these materials¡ These materials are intended as a reference to assist our customers in the selection of the <strong>Mitsubishi</strong> semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual propertyrights, or any other rights, belonging to <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation or a third party.¡ <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examplescontained in these materials.¡ All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by<strong>Mitsubishi</strong> <strong>Electric</strong> Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation or an authorized <strong>Mitsubishi</strong> Semiconductor productdistributor for the latest product information before purchasing a product listed herein.The information described here may contain technical inaccuracies or typographical errors. <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.Please also pay attention to information published by <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation by various means, including the <strong>Mitsubishi</strong> Semiconductor home page (http://www.mitsubishichips.com).¡ When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decisionon the applicability of the information and products. <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.¡ <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact <strong>Mitsubishi</strong> <strong>Electric</strong>Corporation or an authorized <strong>Mitsubishi</strong> Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,aerospace, nuclear, or undersea repeater use.¡ The prior written approval of <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation is necessary to reprint or reproduce in whole or in part these materials.¡ If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approveddestination.Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.¡ Please contact <strong>Mitsubishi</strong> <strong>Electric</strong> Corporation or an authorized <strong>Mitsubishi</strong> Semiconductor product distributor for further details on these materials or the products contained therein.H-CQ587-H KI-0509 Printed in Japan (TOT)© 2005 MITSUBISHI ELECTRIC CORPORATIONNew publication effective Sep. 2005.Specifications subject to change without notice.

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