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Entwicklung einer Nanotechnologie-Plattform für die ... - JuSER

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[29] T. Baily et al.,

[29] T. Baily et al., Journal of Vacuum Science and Technology B 19 (6), 2806 – 2810 (2001). [30] D. J. Resnik et al., Semiconductor International, 71 – 80 June 2002, www.semiconductor.net [31] S. Gilles et al., Microelectronic Engineering 86, 661-664 (2009). [32] N. Koo et al., Nanotechnology 19, 225304 (2008). [33] Proceedings of 34 th International Conference on Micro and Nano Engineering 2008, 47 – 51, 130 – 134, 164 – 189, 396 – 421 (2008). [34] H. Schift, Journal of Vacuum Science and Technology B 26 (2), 458 – 480 (2008). [35] M. Bender et al., Microelectronic Engineering 83, 827 – 830 (2006). [36] International Technology Roadmap for Semiconductors (ITRS): http://public.itrs.net [37] http://www.solid-state.com, Februar 2006. [38] B. Matas und C. de Suberbasaux, “Memory 1997”, Integrated Circuit Engineering Corporation Scottsdale Arizona, ISBN: 1-877750-59-X (1997). [39] P. Pavan et al., Proceedings of the IEEE 85 (8), 1248 – 1271 (1997). [40] J. M. Slaughter et al. Journal of Superconductivity: Incorporating Novel Magnetism 15 (1), 19-25 (2002). [41] A. Sheikholeslami et al., Proceedings of the IEEE 88 (5), 667 – 689 (2000). [42] S. Lai, International Electron Device Meeting 2003, 255 – 258 (2003). [43] M. J. Rozenberg et al., Physical Review Letters 92 (17), 1783021-4 (2003). [44] P. A. Grünberg, Reviews of Modern Physics 80 (4), 1531 – 1540 (2008). [45] M. N. Kozicki et al., Non-Volatile Memory Technology Symposium 2004, 10 – 17 (2004). 129

[46] K. Fijiware et al., Japanese Journal of Applied Physics 47 (8), 5266 – 6271 (2008). [47] K. Szot et al., Rapid Research Letters 1 (2), R86 - R88 (2007). [48] S. Halm et al., Applied Physics Letters 90, 051916 (2007). [49] A. M. Rawlett et al., Nanotechnology 4, 377 – 384 (2003). [50] Y.-M. Lin et al., IEEE Electron Device Letters 26 (11), 823 – 825 (2005). [51] M. C. Lemme et al., IEEE Electron Device Letters 28 (4), 282 – 284 (2007). [52] R. Waser und M. Aono, Nature Materials 6, 833 – 839 (2007). [53] R. Waser et al., Advanced Materials 2009 (in Press). [54] T. W. Hickmott, Journal of Applied Physics 33, 2669 – 2682 (1962). [55] G. Dearmaley et al., Report on Progress in Physics 33, 1129 – 1191 (1970). [56] D. P. Oxley, Electrocomponent Science and Technology UK 3, 217 – 224 (1997) [57] H. Pagnai und N. Sotnik, Physica Status Solidi 108, 11 – 65. [58] A. Asamitsu et al., Nature 388, 50 – 52 (1997). [59] A. Beck et al., Applied Physics Letters 77, 139 – 141 (2000). [60] M. N. Kozicki et al., Pennington NJ USA : Electrochemical Society, 298 – 309 (1999) [61] D. S. Jeong et al., Applied Physics Letters 89, 082909 (2006). [62] J. J. Yang et al., Nature Nanotechnology 3, 429 – 433 (2008). [63] J.-W. Park et al., Journal of Vacuum Science and Technology A 23, 1309 – 1313 (2005). [64] K. Szot et al., Nature Materials 5, 312 –320 (2006). 130