Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...

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Intensity 92 Fig. 7.19. The intensity profile of the CBED pattern along the line indicated on Fig. 7.18. The measurements and subsequent calculated variables of the technique are given in Table 7.3 (the units and scale used in determining the θi’s are irrelevant since it is the ratio of that to the Bragg angle that is important). The plotted values are shown in Fig. 7.20. 2θB Position etc. θ1 θ2 θ3
93 Table 7.5. The measured parameters with calculated variables used in obtaining Fig. 7.20 (Si/ni) 2 ni Δθi Si (nm -2 ) 1/ni 2 (Si/ni) 2 (nm -2 ) 4 13 0.0044 0.063 1.22975E-06 5 28 0.0096 0.040 3.65112E-06 6 38 0.0130 0.028 4.66997E-06 7 49 0.0167 0.020 5.70487E-06 8 58 0.0198 0.016 6.11964E-06 9 67 0.0229 0.012 6.45229E-06 10 76 0.0259 0.010 6.72476E-06 11 86 0.0293 0.008 7.11641E-06 12 95 0.0324 0.007 7.29683E-06 13 105 0.0358 0.006 7.59524E-06 0.000008 0.000007 0.000006 0.000005 0.000004 0.000003 0.000002 0.000001 0 y = -1.09E-04x + 7.94E-06 R 2 = 9.93E-01 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 (1/ni) 2 Fig. 7.20. The plotted values of Table 7.3 with the linear trend line used to determine the foil thickness and extinction distance Once again from the slope and y-intercept of the linear trend line the extinction distance and foil thickness were obtained by taking the square roots of their inverses. The value obtained for the extinction distance is 96 nm and the foil thickness is 355 nm. The foil thickness determined is too thin for the dislocation line direction to be that of a type since the projected length of the dislocation is too long. The only option
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Analysis of the Extended Defects in
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My sincere thanks to the following
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OPSOMMING Hierdie dissertasie hande
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4.2.5. Two-Beam Scattering Matrix 4
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Dedicated to my wife and parents
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SUMMARY The dissertation focuses on
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CONTENTS Chapter 1: INTRODUCTION 1
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1 CHAPTER ONE INTRODUCTION Silicon
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2.1. Introduction 3 CHAPTER TWO OVE
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2.2.2 The Zinc-Blende Structure 5 T
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2.3 Point Defects, Defect Migration
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v m Em vm0 exp( ) (2.2) kT 9 wher
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11 explained and the concept of par
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13 Straight dislocations furthermor
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2.5 Partial Dislocations and Slip 1
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17 Fig. 2.13. The geometrical setup
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19 extrinsic stacking faults are th
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2.8 Twinning 21 Twinning is a proce
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23 Fig. 2.20. The process of vacanc
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S n Td (3.2) 25 and is also referr
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27 where a = a0(Z1 2/3 + Z2 2/3 ) -
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29 Using this expression, curves of
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31 As stated previously hard-sphere
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33 where A is the atomic weight. Th
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35 a vacancy dislocation loop if th
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37 Fig. 4.1. (a) A wave incident on
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39 Consider Fig. 4.2 which illustra
Page 55 and 56: 41 V0 is the mean inner potential o
Page 57 and 58: 43 beam left-hand side g' = 0 g' =
Page 59 and 60: 45 In addition another set of indep
Page 61 and 62: 47 When this is incorporated into t
Page 63 and 64: S ( s , z ) e T i Se ( / 0 )
Page 65 and 66: z0 z2 . xn cos and (4.47) D 1 proj
Page 67 and 68: 5.1 Introduction 53 CHAPTER FIVE LI
Page 69 and 70: 55 different orientations. The inte
Page 71 and 72: 57 Furthermore Pirouz et al. (1987)
Page 73 and 74: 59 intersection of the fault, the f
Page 75 and 76: 61 each nuclei because of the low s
Page 77 and 78: 63 (2000) found that subsequent ann
Page 79 and 80: 6.3.1 Ion Range and Defect Producti
Page 81 and 82: 67 Fig. 6.3. Total number of displa
Page 83 and 84: 7.1 Introduction 69 CHAPTER SEVEN R
Page 85 and 86: Fig. 7.2. Simulated diffraction pat
Page 87 and 88: 73 Fig. 7.3. A HRTEM image of the S
Page 89 and 90: 75 Fig. 7.5. The stacking fault sel
Page 91 and 92: (Si/ni) 2 0.000018 0.000016 0.00001
Page 93 and 94: 79 may be concluded that the initia
Page 95 and 96: 81 Fig. 7.11. Bright field TEM micr
Page 97 and 98: 83 Fig. 7.12 which was obtained by
Page 99 and 100: 85 Fig. 7.13. Bright-field TEM micr
Page 101 and 102: 87 (a) (b) Fig. 7.15. The (a) exper
Page 103 and 104: 89 In the following paragraphs the
Page 105: Fig. 7.18. CBED pattern taken of th
Page 109 and 110: 7.4.2 Results 95 Fig. 7.22. Bright-
Page 111 and 112: 97 Twin platelets on {111} planes
Page 113 and 114: 99 REFERENCES Blumenau, A.T., Jones
Page 115 and 116: 101 Hull, D., Bacon, D.J. : (1984)
Page 117: 103 Smith, D.J., Jepps, N.W. and Pa
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