Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
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2.8 Tw<strong>in</strong>n<strong>in</strong>g<br />
21<br />
Tw<strong>in</strong>n<strong>in</strong>g is a process <strong>in</strong> which a region <strong>of</strong> <strong>the</strong> crystal is deformed through a<br />
homogenous shear process. This produces <strong>the</strong> orig<strong>in</strong>al crystal structure but <strong>in</strong> a<br />
different orientation. The simplest case is <strong>the</strong> result <strong>in</strong> which <strong>the</strong> tw<strong>in</strong>ned area is a<br />
mirror image <strong>of</strong> <strong>the</strong> orig<strong>in</strong>al crystal. This is depicted <strong>in</strong> Fig. 2.18.<br />
Fig. 2.18. A geometrical description <strong>of</strong> tw<strong>in</strong>n<strong>in</strong>g <strong>in</strong> a crystal lattice (from Hull et al.<br />
(1984))<br />
The open circles represent <strong>the</strong> position <strong>of</strong> <strong>the</strong> atoms before tw<strong>in</strong>n<strong>in</strong>g and <strong>the</strong> filled<br />
circles after. The l<strong>in</strong>e x-y is termed <strong>the</strong> tw<strong>in</strong> boundary with atoms above and below it<br />
mirror images <strong>of</strong> one ano<strong>the</strong>r. Tw<strong>in</strong>n<strong>in</strong>g may occur due to plastic deformation or<br />
<strong>in</strong>troduced <strong>in</strong>to <strong>the</strong> material dur<strong>in</strong>g <strong>the</strong> CVD growth process. It differs from <strong>the</strong><br />
process <strong>of</strong> slip s<strong>in</strong>ce no rotation <strong>of</strong> <strong>the</strong> lattice is tak<strong>in</strong>g place. In <strong>the</strong> fcc and z<strong>in</strong>c-<br />
blende structures tw<strong>in</strong>n<strong>in</strong>g takes place on <strong>the</strong> {111} system. It is as a result <strong>of</strong><br />
a shear caus<strong>in</strong>g a displacement <strong>of</strong> 1/6 on each consecutive plane and can be<br />
seen as <strong>the</strong> motion <strong>of</strong> partial dislocations with b = 1/6 on consecutive {111}<br />
planes ly<strong>in</strong>g parallel to x-y.<br />
Fur<strong>the</strong>rmore a modification to <strong>the</strong> electron diffraction pattern obta<strong>in</strong>ed from a tw<strong>in</strong>ned<br />
area <strong>in</strong> a crystal also occurs. The tw<strong>in</strong>ned sections generate a different set <strong>of</strong><br />
diffractions spots accord<strong>in</strong>g to its crystallographic orientation which are superimposed<br />
onto <strong>the</strong> diffraction pattern from <strong>the</strong> perfect crystal. Such a situation is depicted <strong>in</strong><br />
Fig. 2.19.