Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
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47<br />
When this is <strong>in</strong>corporated <strong>in</strong>to <strong>the</strong> Darw<strong>in</strong>-Howie-Whelan equations it modifies <strong>the</strong><br />
equations to be,<br />
d<br />
dz<br />
g<br />
2i(<br />
s<br />
g<br />
i<br />
g g<br />
'<br />
e<br />
' g q '<br />
g<br />
g<br />
dR<br />
g ) g<br />
i<br />
'<br />
(4.37)<br />
g<br />
dz<br />
which only constitutes a change <strong>in</strong> <strong>the</strong> excitation error to an effective excitation error<br />
given by,<br />
dR(r)<br />
( r) s g <br />
(4.38)<br />
dz<br />
eff<br />
sg g<br />
4.3. Image Contrast for Selected Defects<br />
4.3.1 L<strong>in</strong>e Defects<br />
As discussed <strong>in</strong> section 2.4 a dislocation is a l<strong>in</strong>ear lattice defect which may be<br />
characterised by a Burgers vector b and a dislocation l<strong>in</strong>e direction u. It may be<br />
characterised as be<strong>in</strong>g <strong>of</strong> edge character with b·u = 0 or screw character with b || u or<br />
a mixture <strong>of</strong> both. In general <strong>the</strong> displacement field <strong>of</strong> a dislocation is given by,<br />
1 s<strong>in</strong> 2<br />
1<br />
2<br />
cos<br />
<br />
R b<br />
be<br />
b u<br />
ln r <br />
(4.39)<br />
2<br />
4(<br />
1<br />
)<br />
2(<br />
1<br />
)<br />
4(<br />
1<br />
)<br />
<br />
where υ is Poissons’s ratio, be <strong>the</strong> edge component <strong>of</strong> <strong>the</strong> Burgers vector and (r,θ)<br />
polar coord<strong>in</strong>ates <strong>in</strong> a plane perpendicular to <strong>the</strong> dislocation l<strong>in</strong>e direction.<br />
4.3.2 Stack<strong>in</strong>g Faults<br />
The aim <strong>of</strong> this section is not to describe <strong>the</strong> full process <strong>of</strong> simulat<strong>in</strong>g an <strong>in</strong>cl<strong>in</strong>ed<br />
stack<strong>in</strong>g fault with its associated partial dislocations but ra<strong>the</strong>r to describe a relatively<br />
easy way <strong>of</strong> obta<strong>in</strong><strong>in</strong>g one-dimensional <strong>in</strong>tensity pr<strong>of</strong>iles <strong>of</strong> stack<strong>in</strong>g fault fr<strong>in</strong>ges. The<br />
procedure uses a scatter<strong>in</strong>g matrix approach discussed <strong>in</strong> Section 4.2.5 with <strong>the</strong>