Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
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56<br />
Yun et al. (2006) used AFM to show <strong>the</strong> process <strong>of</strong> nucleation and growth at different<br />
stages dur<strong>in</strong>g growth. The images show isolated nuclei form<strong>in</strong>g on <strong>the</strong> substrate at an<br />
epilayer thickness <strong>of</strong> 0.08 µm dur<strong>in</strong>g <strong>the</strong> <strong>in</strong>itial stages <strong>of</strong> deposition. The nuclei merge<br />
at a thickness <strong>of</strong> 0.13 µm and develop fur<strong>the</strong>r to form a cont<strong>in</strong>uous {100} faced<br />
surface at 0.7 µm. They expla<strong>in</strong>ed that <strong>the</strong> driv<strong>in</strong>g force for <strong>the</strong> growth to take place<br />
through this process is a result <strong>of</strong> <strong>the</strong> lattice mismatch between <strong>the</strong> <strong>SiC</strong> and Si as well<br />
as <strong>the</strong>rmal mismatch.<br />
F<strong>in</strong>ally <strong>the</strong> researchers Sudarshan et al. (2006), Nagasawa et al. (2002), and Jacob et<br />
al. (2000) all presented results that are consistent with what is discussed above.<br />
5.3 Crystal Defects <strong>in</strong> <strong>SiC</strong><br />
5.3.1. Introduction<br />
The ma<strong>in</strong> crystal <strong>defects</strong> found <strong>in</strong> epitaxially grown <strong>3C</strong>-<strong>SiC</strong> are stack<strong>in</strong>g faults with<br />
<strong>the</strong>ir accompany<strong>in</strong>g partial dislocations, tw<strong>in</strong>s and <strong>in</strong>version doma<strong>in</strong> boundaries.<br />
In a TEM study by Jacob et al. (2000) on epitaxially grown <strong>3C</strong>-<strong>SiC</strong> on Si(001) a high<br />
density <strong>of</strong> planar <strong>defects</strong> ly<strong>in</strong>g on {111} planes was found. Defects <strong>in</strong>cluded stack<strong>in</strong>g<br />
faults and microtw<strong>in</strong>s and <strong>the</strong> authors suggested that <strong>the</strong> <strong>defects</strong> were <strong>in</strong>troduced<br />
dur<strong>in</strong>g <strong>the</strong> growth process to accommodate <strong>the</strong> large lattice and <strong>the</strong>rmal mismatches<br />
between <strong>the</strong> crystals.<br />
Similar f<strong>in</strong>d<strong>in</strong>gs were reported by Stoemenos et al. (2004) <strong>in</strong> a TEM study on 300µm<br />
thick freestand<strong>in</strong>g <strong>3C</strong>-<strong>SiC</strong>. Microtw<strong>in</strong>s, stack<strong>in</strong>g faults and <strong>in</strong>version doma<strong>in</strong><br />
boundaries were observed and <strong>the</strong>ir presence attributed to <strong>the</strong> same reasons as above.<br />
Powell et al. (1987) <strong>in</strong> an extensive microscopy study on <strong>3C</strong>-<strong>SiC</strong> found microtw<strong>in</strong>s,<br />
stack<strong>in</strong>g faults and also misfit dislocations accommodat<strong>in</strong>g <strong>the</strong> lattice mismatch. They<br />
presented possible mechanisms for <strong>the</strong> nucleation and growth <strong>of</strong> <strong>the</strong> <strong>defects</strong> and <strong>the</strong>se<br />
will be discussed <strong>in</strong> Sections 5.3.2 and 5.3.3.