- Page 1 and 2: Analysis of the Extended Defects in
- Page 3 and 4: My sincere thanks to the following
- Page 5 and 6: OPSOMMING Hierdie dissertasie hande
- Page 7: 4.2.5. Two-Beam Scattering Matrix 4
- Page 11 and 12: SUMMARY The dissertation focuses on
- Page 13 and 14: CONTENTS Chapter 1: INTRODUCTION 1
- Page 15 and 16: 1 CHAPTER ONE INTRODUCTION Silicon
- Page 17 and 18: 2.1. Introduction 3 CHAPTER TWO OVE
- Page 19 and 20: 2.2.2 The Zinc-Blende Structure 5 T
- Page 21 and 22: 2.3 Point Defects, Defect Migration
- Page 23 and 24: v m Em vm0 exp( ) (2.2) kT 9 wher
- Page 25 and 26: 11 explained and the concept of par
- Page 27 and 28: 13 Straight dislocations furthermor
- Page 29 and 30: 2.5 Partial Dislocations and Slip 1
- Page 31 and 32: 17 Fig. 2.13. The geometrical setup
- Page 33 and 34: 19 extrinsic stacking faults are th
- Page 35 and 36: 2.8 Twinning 21 Twinning is a proce
- Page 37 and 38: 23 Fig. 2.20. The process of vacanc
- Page 39 and 40: S n Td (3.2) 25 and is also referr
- Page 41 and 42: 27 where a = a0(Z1 2/3 + Z2 2/3 ) -
- Page 43 and 44: 29 Using this expression, curves of
- Page 45 and 46: 31 As stated previously hard-sphere
- Page 47 and 48: 33 where A is the atomic weight. Th
- Page 49 and 50: 35 a vacancy dislocation loop if th
- Page 51 and 52: 37 Fig. 4.1. (a) A wave incident on
- Page 53 and 54: 39 Consider Fig. 4.2 which illustra
- Page 55 and 56: 41 V0 is the mean inner potential o
- Page 57 and 58: 43 beam left-hand side g' = 0 g' =
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45 In addition another set of indep
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47 When this is incorporated into t
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S ( s , z ) e T i Se ( / 0 )
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z0 z2 . xn cos and (4.47) D 1 proj
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5.1 Introduction 53 CHAPTER FIVE LI
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55 different orientations. The inte
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57 Furthermore Pirouz et al. (1987)
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59 intersection of the fault, the f
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61 each nuclei because of the low s
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63 (2000) found that subsequent ann
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6.3.1 Ion Range and Defect Producti
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67 Fig. 6.3. Total number of displa
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7.1 Introduction 69 CHAPTER SEVEN R
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Fig. 7.2. Simulated diffraction pat
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73 Fig. 7.3. A HRTEM image of the S
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75 Fig. 7.5. The stacking fault sel
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(Si/ni) 2 0.000018 0.000016 0.00001
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79 may be concluded that the initia
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81 Fig. 7.11. Bright field TEM micr
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83 Fig. 7.12 which was obtained by
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85 Fig. 7.13. Bright-field TEM micr
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87 (a) (b) Fig. 7.15. The (a) exper
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89 In the following paragraphs the
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Fig. 7.18. CBED pattern taken of th
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93 Table 7.5. The measured paramete
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7.4.2 Results 95 Fig. 7.22. Bright-
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97 Twin platelets on {111} planes
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99 REFERENCES Blumenau, A.T., Jones
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101 Hull, D., Bacon, D.J. : (1984)
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103 Smith, D.J., Jepps, N.W. and Pa