Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
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CBED<br />
76<br />
Fig. 7.6. shows an annotated micrograph <strong>of</strong> a CBED pattern recorded us<strong>in</strong>g a 400<br />
reflection at <strong>the</strong> area conta<strong>in</strong><strong>in</strong>g <strong>the</strong> stack<strong>in</strong>g fault.<br />
Fig. 7.6. An annotated CBED micrograph used <strong>in</strong> <strong>the</strong> determ<strong>in</strong>ation <strong>of</strong> <strong>the</strong> foil<br />
thickness<br />
The distances measured on <strong>the</strong> orig<strong>in</strong>al negative are <strong>in</strong>dicated on <strong>the</strong> figure. The<br />
values calculated accord<strong>in</strong>g to <strong>the</strong> technique outl<strong>in</strong>ed <strong>in</strong> De Graef (2003) are given <strong>in</strong><br />
Table 7.3 with correspond<strong>in</strong>g plotted values and <strong>the</strong> associated l<strong>in</strong>ear trend l<strong>in</strong>e given<br />
<strong>in</strong> Fig. 7.7.<br />
Table 7.3. The measured parameters with calculated variables used <strong>in</strong> obta<strong>in</strong><strong>in</strong>g Fig.<br />
7.7.<br />
ni Δθi Si (nm -2 ) 1/ni 2 (Si/ni) 2 (nm -2 )<br />
2 0.36 0.0050 0.250 6.31667E-06<br />
3 0.80 0.0111 0.111 1.38637E-05<br />
4 1.13 0.0157 0.063 1.55589E-05<br />
5 1.47 0.0205 0.040 1.68515E-05