Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
<strong>SiCube</strong><br />
Furnace for silicon carbide crystal growth<br />
<strong>SiCube</strong><br />
Semiconductor Systems
<strong>SiCube</strong> - Furnace for silicon carbide crystal growth<br />
Application<br />
The HTCVT / HTCVD system has been especially designed<br />
as hot wall apparatus for Silicon Carbide (SiC)<br />
crystal growth by sublimation / thermal decomposition<br />
(pyrolysis) of source gases at high temperatures. By<br />
high vacuum capability ultra clean surfaces with regard<br />
to both water and oxygen can be achieved prior to the<br />
start of process. The system design allows the use of<br />
substrates (seeds) up to 4” diameter.<br />
Technical Data<br />
Reactor tube<br />
operating pressure: approx. 5 - 900 mbar<br />
operating temperature: max. 2,600 °C<br />
Power supply<br />
power: max. 80 kW<br />
frequency: 6 - 8 kHz<br />
Vacuum pumps<br />
Pumping Speed<br />
- dry pump (process): approx. 180 m -3 h -1<br />
- turbo molecular pump: approx. 260 l . sec -1<br />
- membrane pump (back-up): approx. 3.0 m -3 h -1<br />
Ultimate vacuum<br />
- empty reactor tube (300mm OD) 5 . 10 -6 mbar<br />
He-single-Leak rate<br />
- gas supply system max. 1 . 10 -8 mbar . l . sec -1<br />
- reactor (cold, after max. 1 . 10 -7 mbar . l . sec -1<br />
heating in Ar)<br />
Pump down time for<br />
the empty reactor<br />
- to 5 . 10 -6 mbar at 80 °C max. 60 min<br />
Electrical line connection 1 3AC/PE 400V ± 10% at 50<br />
cycles approx. 96 kVA<br />
Fusing 3 x 160 Amp<br />
Electrical line connection 2 3AC/PE 400V ± 10% at 50<br />
cycles approx. 9 kVA<br />
Fusing 3 x 25 Amp<br />
<strong>PVA</strong> <strong>TePla</strong> <strong>AG</strong><br />
Germany<br />
Im Westpark 10 –12<br />
35435 Wettenberg<br />
Main equipment<br />
- reactor module<br />
- loading equipment<br />
- vacuum equipment<br />
- water distribution system<br />
- gas cabinet<br />
- control cabinet<br />
Area required<br />
approx. 2,000 x 2,500 x 3,725 mm<br />
Weight<br />
approx. 3,800 kg<br />
Design<br />
The systems consist of a reactor tube made of quartz glass<br />
comprising bottom and top flanges for access to the growth<br />
cell and is vertically built on a welded base frame. An induction<br />
coil for heating is installed around the reactor. Underneath and<br />
next to the furnace the power supply is installed as well as the<br />
pumping unit including turbo molecular pump and mechanical<br />
backing pump. The gas supply unit, the distributing system for<br />
cooling water and the control cabinet are also attached to the<br />
base frame. Vibrations are reduced by absorbers.<br />
Phone +49 (641) 6 86 90 - 0<br />
Fax +49 (641) 6 86 90 - 800<br />
Rev. - Stand: 010<br />
E-Mail info @ pvatepla.com<br />
Home www.pvatepla.com
Change language