DAFTAR PUSTAKA - Repository UPI
DAFTAR PUSTAKA - Repository UPI
DAFTAR PUSTAKA - Repository UPI
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<strong>DAFTAR</strong> <strong>PUSTAKA</strong><br />
Anonim.GaN-gallium nitride.[Online].Tersedia:http://www.ioffe.rssi.ru/SVA/<br />
SVA/NSM/Semicond/GasB/GaN/basic.<br />
Foresi, J. S. and T. D.(1993). Moustakas.Metal Contacts To Gallium nitride.<br />
Appl.Phys.Lett.62(22).<br />
Bing Zhou, Ultraviolet Laser and Remote Plasma Enchacement in Low<br />
Temperatur Chemical Vapor Deposition of Galium Nitrida,<br />
MagquarieUniversity, Australia, 1996.<br />
Jang, Moongyu and Junghwan Lee.(2002).Analysis of Schootky Barrier Height in<br />
Small Contacts Using a Thermonic-Field Emission Model.ETRI Journal<br />
Vol.24(6).<br />
Kwok, K. Ng.(1995).Complete Guide to Semiconductor Devices.New York:Mc<br />
Graww-Hill.<br />
Lin, M. E., et al.(1994).Low Resistance Ohmic Contacs on Wide Band-Gap<br />
GaN.J.Appl.Phys.Lett.64(8).<br />
Monroy, E. et al.(1997).Characterization and Modeling of Photoconductive GaN<br />
Ultraviolet Detectors.MRS Internet Journal of Nitride Semiconductor<br />
Research Vol.2 Art. 12.<br />
Fernando A. Ponce, Microstruture of Epitaxial III-V Nitride Thin Film, dari S.J.<br />
Pearton (Ed), Optoelectronic Properties of Semiconductor and<br />
Superlattice, vi\ol. 2, OPA, Amsterdam B.V Publised, Netherland.<br />
44
J. K. Sheu, Y.K. Su, G.C. Chi, M.J. Jou dan C.M Chang, Effect of Thermal<br />
Annealing on Indium Tin Oxide Schattky Contacs of n-GaN. Appl. Phys.<br />
Lett. 72 (25), 1998.<br />
Razeghi, M. and A. Rogalski.(1996).Semiconductor Ultraviolet Detectors.J. Appl.<br />
Phys.79(10).<br />
Rhoderick, E. H and Wiliams, R. H.(1988).Metal-Semiconductor Contacs<br />
2nd.Oxford:Clarendon Press.<br />
Rio, S. Reka dan Masomori Lida.(1982).Fisika dan Teknologi<br />
Semikonduktor.Jakarta:Pradnya Paramita.<br />
Rugaya.(2000).Sifat Listrik Dan Pengaruh Annealing Terhadap Kontak Ohmik<br />
Logam Perak Pada Film Tipis Galium Antimoni.Bandung:Tesis Magister<br />
Fisika ITB.<br />
Runyan, W. R.(1975).Semiconductor Measurement and Instrumentation Tokyo:<br />
Mc Graww-Hill Kogakusha.<br />
Rusdiana, D. et al(2005).Fabrication and Characterization of Metal-<br />
Semiconductor-Metal n-GaN UV Photodetector by PA-MOVCD.Jurnal<br />
Matematika dan Sains Vol.10 No.1.<br />
Singh, Jasprit.(1995).Semiconductor Optoelectronics Physics and Technology<br />
Singapore: Mc Graww-Hill.<br />
Sukirno.(2007).Fisika Devais Semikonduktor.Bandung:Penerbit ITB<br />
Suryana, Risa.(2000).Studi Sifat Optik Film Tipis GaN Ditumbuhkan Dengan<br />
MOVCD Berbantuan Plasma.Bandung:Tesis Magister Fisika ITB.<br />
45
Sutanto, H. dkk(2002).Dioda Schottky Au/n-GaN diatas Si (111) Ditumbuhkan<br />
Dengan Plasma Assisted-MOVCD.Jurnal Fisika Himpunan Fisika<br />
Indonesia Vol. A5.<br />
Sze, S. M.(1985).Semiconductor Device Physics and Technology.New<br />
Jersey:John Wiley & Sons.<br />
Sze, S. M.(1981).Physics of Semiconductor Device 2nd.New Jersey:John<br />
Wiley & Sons.<br />
Van Der Pauw, L. J.(1958).A Methode of Measuring Specific Resistivity And Hal<br />
Effect of Discs of Arbitary Shape.Philip Research Report 13.<br />
Wang, L. D, et al.(1996).High Barrier Height GaN Schottky Diodes : Pt/GaN and<br />
Pd/GaN.Appl.Phys.Lett.68(9).<br />
Wang, L. D, et al.(1999).Cubic Alumunium Nitride and Gallium Nitride Thin<br />
Films Prepared by Pulsed Laser Deposition.[Online].Tersedia:http://<br />
www.elsevier.nl/locate/apsusc<br />
46
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