functionalized surfaces on porous silica by atomic layer ... - Aaltodoc
functionalized surfaces on porous silica by atomic layer ... - Aaltodoc
functionalized surfaces on porous silica by atomic layer ... - Aaltodoc
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Figure 1. Schematic presentati<strong>on</strong> of the reacti<strong>on</strong> sequences when alkoxysilanes are deposited<br />
<strong>on</strong> <strong>silica</strong> in an aqueous solvent after Vansant et al. 1<br />
C<strong>on</strong>trolled depositi<strong>on</strong> of surface-saturated molecular <strong>layer</strong>s from the gas phase <strong>on</strong>to the<br />
substrate surface is achieved <strong>by</strong> vaporizing the precursor molecules and allowing them to<br />
react with the substrate under completely dry c<strong>on</strong>diti<strong>on</strong>s. The presence of water can be<br />
excluded in the gas phase because no solvents are needed and the precursor molecules, which<br />
may be possibly hydrolyzed, cannot be vaporized at low depositi<strong>on</strong> temperatures. When<br />
alkoxysilanes (or aminoalkoxysilanes) are used as precursors, the hydrolysis of alkoxy<br />
groups, hydrogen b<strong>on</strong>ding of hydrolyzed alkoxy groups, and further c<strong>on</strong>densati<strong>on</strong> reacti<strong>on</strong>s<br />
before depositi<strong>on</strong> can all be avoided (Figure 2). 1 Thus, the chemical interacti<strong>on</strong>s of the<br />
precursor molecules with the reactive surface species result in direct b<strong>on</strong>d formati<strong>on</strong> and the<br />
depositi<strong>on</strong> of a single surface-saturated molecular <strong>layer</strong> in a reproducible manner. However,<br />
total surface density of (amino)propylsilyl groups <strong>on</strong> the surface is lower than in multi<strong>layer</strong>s<br />
formed under aqueous c<strong>on</strong>diti<strong>on</strong>s. The gas-phase depositi<strong>on</strong> of a single surface-saturated<br />
molecular <strong>layer</strong> can be performed <strong>by</strong> various chemical vapor depositi<strong>on</strong> (CVD) techniques<br />
but especially <strong>by</strong> ALD which also enables a simple c<strong>on</strong>trol of the surface density and the film<br />
thickness, as will be discussed in Secti<strong>on</strong> 2.2. ALD is not <strong>on</strong>ly closely related to CVD, but<br />
also to grafting. 8<br />
13