Microsystem technology (MST) - Geert's pages

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More Moore: the Brains Product Half-Pitch, Gate-Length (nm) 10000.0 1000.0 100.0 10.0 1.0 hp 5760 2005 ITRS Product Technology Trends - Half-Pitch, Gate-Length 3-year Node Cycle hp 4080 hp 2880 Scenario D: 2-year Node Cycle: DRAM from 1998-2004 Flash from 2004-2008 hp 2040 hp 1440 Samsung “60nm” 8Gbit/0.008u2/bit[MLC]; Est. 4Gbit 0.016u2/cell[SLC] Intro/2004; est. Prod/2005-7 hp 1020 hp 720 hp 510 2-year Node Cycle hp 360 DRAM 1/2 Pitch[Sc.C] MPU M1 1/2 Pitch[Sc.C] Flash Poly 1/2 Pitch[NEW Sc.C] Flash Poly 1/2 Pitch[NEW Sc.D] MPU Gate Length - Printed MPUGate Length - Physical Past Future [Proposal] 1970 1975 1980 1985 1990 1995 2000 2005 2010 2015 2020 Year of Production hp 255 hp 180 hp 130 hp 90 hp 90 1-year Node Cycle hp 65 hp 45 3-year Node Cycle 2005-2020 ITRS Range 2005 ITRS Flash Proposal: Scenario C = Catch DRAM @ 2004/90nm; then 3-yr cycle Scenario D = Cross-over DRAM @ 2004/90nm; then 2-yr cycle to 2006/65nm and 2008/45nm; then 3-yr cycle hp65 hp45 hp32 hp22 hp16 Scenario C: 3(thru 250nm)-2(thru 90nm)-3 hp32 hp22 hp16 hp11 Scenario D: 3(thru 250nm)-2(thru 45nm)-3 Courtesy Alan Allan, IRC/ITRS 6
Intelligent systems compute & interact … baseline CMOS memory RF ‘More Moore’ ‘More than Moore’ Compute and store Digital content Complex Design (SoC) Much software HV Power passives Interact with user and environment SoC can be a component of SiP sensors actuators bio, fluidics Non-digital content Hetero Integration (SiP) Many processes 7
Page 1 and 2: Fred Roozeboom and Geert Langereis
Page 3 and 4: Microsystem technology (MST) in our
Page 5: More Moore: the Brains Critical dim
Page 9 and 10: … resulting in two system realiza
Page 13 and 14: Ambient Intelligence penetration in
Page 15 and 16: Microcosmos different proportions M
Page 17 and 18: Scaling Physical phenomenon Scales
Page 19 and 20: Surface- and bulk-micromachining Ac
Page 21 and 22: Low-loss MOS integrated capacitors
Page 25 and 26: What’s in common? • Devices int
Page 27 and 28: Research strategy • develop devic
Page 29 and 30: Electrowetting: fluid focus lens 29
Page 31 and 32: Reflection [a.u.] Electrowetting di
Page 33 and 34: SiP solutions for mobile phones R,
Page 35 and 36: RF Passive Integration on Si thin-f
Page 37 and 38: RF Passive Integration + MEMS modul
Page 39 and 40: High-value trench capacitors 1. Inc
Page 41 and 42: RF-MEMS switchable capacitor Free-h
Page 43 and 44: Sensors & actuators Magnetic sensor
Page 45 and 46: Magneto-resistive sensing concept S
Page 47 and 48: Stick-in-chip module Ferrite stick
Page 49 and 50: Biosensor cartridge flex foil In co
Page 51 and 52: Energy management & Autonomous devi
Page 53 and 54: Applications • value paper • ba
Page 55 and 56: Towards home fetal monitoring • s
Page 57 and 58:
Microsystem technology (MST) in our
Page 59 and 60:
Glass Microfabrication Glass is a v
Page 61 and 62:
Materials and production What enabl
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Manufacturing Bottlenecks for indus
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Manufacturing “Sensors and Actuat
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Dry etching at room temperature 1.
Page 69 and 70:
Details of our macropore array mask
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First results on pores STS-HRE Etch
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RIE etching (‘Bosch’ process) f
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Microsystem packaging RF-MEMS herme
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Microsystem packaging Plug-‘n-pla
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MEMS Modeling Lumped elements with
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Acknowledgment J. van Beek R. Dekke
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