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Electro Optical Characterisation of Short Wavelength Semiconductor ...

Electro Optical Characterisation of Short Wavelength Semiconductor ...

Chapter 4 Data Analysis

Chapter 4 Data Analysis Success is relative. It is what we can make of the mess we have made of things. T. S. Eliot This chapter contains the main concept of this thesis. Many different devices of both III-V and II-VI group underwent tests in order to characterise their L/I, I/V behaviour as well as the wavelength of the output light. To have an arrangement in the data there are two main sections in this chapter, one over GaN and the other over ZnSe devices. It is worth mentioning that the approaches are not all the same for both material systems. 4.1 ZnSe Devices The ZnSe devices measured were of three series s1171, s1172 and s1173. They were all grown in 2002 and were the same Arne Gust worked with in his master thesis [44]. They are all similar except for barriers brought to the structures which are not the case in the principle assembly (see Fig. 4.1). current injection stripe Pd/Au contact 2 O O3 Insulator Al ZnSe:N/ZnTe:N multi− quantum well contact ZnSe:N spacer ZnSSe:N spacer MgZnSSe:N cladding ZnSSe Waveguide CdZnSSe:Cl quantum well ZnSSe:Cl waveguide MgZnSSe:Cl cladding ZnSSe:Cl spacer ZnSe:Cl buffer GaAs:Si buffer GaAs:Si substrate 10 nm/250 nm 80 nm 20 nm 160 nm 120 nm 700 nm 100 nm 4 nm 100 nm 1000 nm 120 nm 20 nm 380 nm 350 µm Figure 4.1: Principle assembly of a II-VI laser diode made in Bremen 29

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