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Contents<br />

Preface i<br />

1 Basic Concepts 3<br />

1.1 Historical Background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3<br />

1.2 Physics <strong>of</strong> <strong>Semiconductor</strong> Lasers . . . . . . . . . . . . . . . . . . . . . . . . 4<br />

1.2.1 Crystals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4<br />

1.2.2 Light in Crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8<br />

1.3 Laser Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13<br />

1.3.1 Heterostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13<br />

1.3.2 Epitaxy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14<br />

2 Developing Laser Diodes 15<br />

2.1 Growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15<br />

2.1.1 Metalorganic Vapour Phase Epitaxy . . . . . . . . . . . . . . . . . 15<br />

2.1.2 Molecular Beam Epitaxy . . . . . . . . . . . . . . . . . . . . . . . . 16<br />

2.2 Processing Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17<br />

2.2.1 Planar waveguide . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17<br />

2.2.2 Ridge waveguide . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19<br />

3 <strong>Characterisation</strong> 21<br />

3.1 Structural and <strong>Optical</strong> <strong>Characterisation</strong> . . . . . . . . . . . . . . . . . . . 21<br />

3.1.1 High Resolution X-Ray Diffraction . . . . . . . . . . . . . . . . . . 21<br />

3.1.2 Photoluminescence . . . . . . . . . . . . . . . . . . . . . . . . . . . 22<br />

3.1.3 SEM & FIB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23<br />

3.2 Opto-Electrical <strong>Characterisation</strong> . . . . . . . . . . . . . . . . . . . . . . . . 23<br />

3.2.1 Current Injection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23<br />

3.2.2 Current-Voltage Characteristics . . . . . . . . . . . . . . . . . . . . 24<br />

3.2.3 Output Light-Current Characteristics . . . . . . . . . . . . . . . . . 25<br />

3.2.4 <strong>Electro</strong>luminescence . . . . . . . . . . . . . . . . . . . . . . . . . . 26<br />

4 Data Analysis 29<br />

4.1 ZnSe Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29<br />

4.1.1 <strong>Characterisation</strong> <strong>of</strong> ZnSe laser diodes . . . . . . . . . . . . . . . . . 30<br />

4.1.2 ZnSe results in brief . . . . . . . . . . . . . . . . . . . . . . . . . . 38<br />

4.2 GaN Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40<br />

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