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Electro Optical Characterisation of Short Wavelength Semiconductor ...

Electro Optical Characterisation of Short Wavelength Semiconductor ...

Data Analysis Figure

Data Analysis Figure 4.18: Optical microscopic as well as SEM picture of a device belonging to 2µm planars. 46 planar shallow ridge deep ridge 2µm LED defect defect 6µm † lasing LED lasing 10µm LED LED lasing † lased also unmirrored Table 4.7: Mirrored GaN devices (g0975)

Output Light Power [W] 5e-05 4e-05 3e-05 2e-05 1e-05 g0975/planar/mirrored width: 6um, length: 1035.2um 0 5000 10000 15000 20000 25000 30000 Current Density[A/cm 2 0 ] Output Light Power [W] 6e-05 5e-05 4e-05 3e-05 2e-05 Output Light Power [W] 7e-06 6e-06 5e-06 4e-06 3e-06 2e-06 1e-06 g0975/deep ridge/mirrored width: 10um, length: 389.19um 0 5000 10000 Current Density[A/cm 15000 20000 2 1e-05 ] g0975/deep ridge/mirrored width: 6um, length: 671.49um GaN Devices 0 10000 20000 30000 40000 50000 Current Density[A/cm 2 0 ] Figure 4.19: Output light power vs. current density by the mirrored lasing devices 47

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