Electro Optical Characterisation of Short Wavelength Semiconductor ...
Summary and Outlook cracked surface. Here a backtracking thickness optimisation method would act fair. Mirroring of the GaN devices lead to an obvious improvement of the quality of the laser. Optimising the mirrors regarding their material and thickness is therefore of importance. 54
Appendix A Electrical Sources & Measuring Devices The list below shows the electrical devices used in this thesis to apply current and perform optical and electrical measurements. Name Manufacturer Device LDP-3811 ILX Lightware Inc. precision pulsed/cw current source 8114A HP/Agilent pulse generator Keithley 2400 Keithley Instruments sourcemeter KI 197 Keithley Instruments voltmeter TDS3000 Tektronix Inc. oscilloscope OMH-6701B ILX Lightware Inc. Si power head OMM-6710B ILX Lightware Inc. optical multimeter FHR 1000 Jobin-Yvon spectrometer Table A.1: List of current sources and measuring devices 55
University of Bremen Technical Univ
Preface ing the characterisation me
CONTENTS 4.2.1 Characterisation of