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Electro Optical Characterisation of Short Wavelength Semiconductor ...

Electro Optical Characterisation of Short Wavelength Semiconductor ...

ZnSe threshold current

ZnSe threshold current density values planar 600nm 1200nm 1800nm 2µm LED 3821 A/cm 2 2956.7 A/cm 2 defect (1204.57 µm) (1100.07 µm) 4715.4 A/cm 2 ⋆ 2053.9 A/cm 2 (1097.78 µm) (1096.77 µm) 3383.65 A/cm 2 (1099.74 µm) ⋆ 3661.76 A/cm 2 (2040.03 µm) 6µm 1890.7 A/cm 2 1368.95 A/cm 2 961.765 A/cm 2 604.72 A/cm 2 (1115.83 µm) (1083.02 µm) (1196.49 µm) (1081.55 µm) 3764.36 A/cm 2 1220.32 A/cm 2 801.71 A/cm 2 ⋆ 775.24 A/cm 2 (1117 µm) (1086.20 µm) (1191.89 µm) (1086.27 µm) 2491.13 A/cm 2 ⋆ 750.62 A/cm 2 ⋆ 769.77 A/cm 2 (1116.96 µm) (1081.42 µm) (1189.87 µm) ⋆ 3310.67 A/cm 2 (1111.79 µm) 10µm LED 1285.98 A/cm 2 797.12 A/cm 2 772.5 A/cm 2 (1389.73 µm) (1020.8 µm) (1070.42 µm) 1040.63 A/cm 2 635.7 A/cm 2 ⋆ 925.7 A/cm 2 (1392.86 µm) (1023.99 µm) (1062.29 µm) ⋆ 1314.71 A/cm 2 879.68 A/cm 2 (1387.72 µm) (1027.18 µm) ⋆ 671.27 A/cm 2 (1027.19 µm) ⋆ These values are the ones used in Tables 4.2, 4.3 and 4.4. Table B.2: Threshold current density values measured. The values in the parentheses are the average lengths of the devices. 58

Appendix C Band structure simulation using 1D Poisson-Schrödinger equation solver The software was written by Prof. G. Snider, university of Notre Dame, USA. It numerically calculates the one dimensional band structure of a semiconductor heterostructure based on the method of finite differences [56]. The structure is divided into several finite sections with a variable density of the mesh points. It is of importance to choose the mesh spacing precisely, in particular at the interfaces of the individual layers and inside the quantum wells. The free charge carrier concentration is determined from the thermal activation of the doping atoms using Boltzmann statistics. The programme is limited to calculations in thermodynamical equilibrium, i.e. current flow is not calculated. Parameter AlGaN References Bandgap [eV] 3.42+2.25x+0.53x 2 (x

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