MEMS + - I-Micronews
MEMS + - I-Micronews
MEMS + - I-Micronews
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Reverse engineering & costing of<br />
a family of <strong>MEMS</strong> microphones<br />
Analysis of each device, technology and production<br />
cost comparison
Objectives of the action<br />
• A complete reverse engineering & costing of each selected <strong>MEMS</strong><br />
microphone<br />
• For each device, definition of the following points:<br />
• Process flow<br />
• Manufacturing environment (front end and back end)<br />
• Manufacturing cost of <strong>MEMS</strong> and ASIC dies<br />
• Packaging<br />
• Analysis and comparison on the devices in term of:<br />
• Technical/processing choices for the front end<br />
• Technical/processing choices for the packaging<br />
• Production and cost infrastructure<br />
• Comparison of the devices and analysis of trends detected<br />
• Phone meeting and Q&A session in order to answer questions on<br />
the analysis done.<br />
© 2012 • 2
Benefits<br />
• Unique and complete offer on the latest <strong>MEMS</strong> microphones (teardown,<br />
reverse costing analysis, technical & market comparison…, Q&A session)<br />
• Discover the technology used by the main <strong>MEMS</strong> microphone suppliers<br />
(Knowles, Akustica, STM…)<br />
• Full teardown of the latest technologies on the market especially the<br />
• Akustica AKU230<br />
• EPCOS T4000/T4060<br />
• Package price for 3 to 6 reports of your choice, among the different part<br />
reference<br />
• Unique comparative analysis of the technology and choices leading to<br />
these results.<br />
• Q&A session to discuss and explain the results<br />
© 2012 • 3
Already Analyzed <strong>MEMS</strong> Microphones<br />
AAC Acoustic<br />
SM0401<br />
Akustica AKU230<br />
Analog Devices<br />
ADMP421<br />
EPCOS T4000/T4060<br />
Knowles<br />
SPU0409/SPU0410<br />
ST MP45DT01<br />
© 2012 • 4
Typical Table of Contents<br />
Glossary<br />
1. Overview / Introduction……….……………….…........…4<br />
– Executive Summary<br />
– Reverse Costing Methodology<br />
2. Knowles Company Profile…………………….……....….6<br />
– Knowles Profile<br />
– <strong>MEMS</strong> Microphone Portfolio<br />
– SPU0410LR5H Characteristics<br />
– Knowles Business Model<br />
4. Physical Analysis………………………...………............12<br />
– Synthesis of the Physical Analysis<br />
– Physical Analysis Methodology<br />
– Package Characteristics & Markings<br />
– Package Pin-Out<br />
– Package Cross-Section<br />
– Device Structure<br />
– Package Opening<br />
– ASIC Dimensions<br />
– ASIC Markings<br />
– ASIC Cross-Section<br />
– ASIC Delayering<br />
– ASIC Process Characteristics<br />
– <strong>MEMS</strong> Dimensions<br />
– <strong>MEMS</strong> Markings<br />
– <strong>MEMS</strong> Surface<br />
– <strong>MEMS</strong> Structure<br />
– <strong>MEMS</strong> Cross-section<br />
– <strong>MEMS</strong> Process Characteristics<br />
– Physical Data Summary<br />
5. Manufacturing Process Flow…….…………………..….55<br />
– Global Overview<br />
– ASIC Process Flow<br />
– Description of the ASIC Wafer Fabrication Unit<br />
– <strong>MEMS</strong> Process Flow<br />
– Description of the <strong>MEMS</strong> Wafer Fabrication Unit<br />
– Packaging Process Flow<br />
– Description of the Packaging Unit<br />
6. Cost Analysis………………………….………………..…..70<br />
– Synthesis of the Cost Analysis<br />
– Main Steps of Economic Analysis<br />
– Yields Explanation<br />
– Yields Hypotheses<br />
– Die per wafer & Probe Test<br />
– ASIC Front-End : Hypotheses<br />
– ASIC Front-End Cost<br />
– ASIC Back-End 0 : Probe Test, Backgrinding & Dicing<br />
– ASIC Die Cost<br />
– <strong>MEMS</strong> Front-End : Hypotheses<br />
– <strong>MEMS</strong> Front-End Cost<br />
– <strong>MEMS</strong> Front-End Cost per Process Steps<br />
– <strong>MEMS</strong> Front-End : Equipment Cost per Family<br />
– <strong>MEMS</strong> Front-End : Material Cost per Family<br />
– <strong>MEMS</strong> Back-End 0 : Probe Test & Dicing<br />
– <strong>MEMS</strong> Die Cost (Front End + Back End 0)<br />
– Back-End 1 : Packaging Cost<br />
– Back-End 1 : Final test & Calibration Cost<br />
– SPU0410LR5H Component Cost (FE + BE 0 + BE 1)<br />
7. Estimated Price Analysis….………………….……..……95<br />
– Definition of Prices<br />
– Manufacturer Financial Ratios<br />
– SPU0410LR5H Estimated Manufacturer Price<br />
Contact…….……………………………………………………99<br />
© 2012 • 5
Visualization of the Die Placement<br />
(Package X-Ray)<br />
Package X-Ray<br />
Metal Cap<br />
PCB substrate<br />
2 ML<br />
X-Ray image of the PCB package (4 copper layers)<br />
The package is composed of 2 parts which are :<br />
• The PCB Substrate is a double-sided PCB (2 metal layers)<br />
• The Metal Cap is a stainless steel cap.<br />
ASIC<br />
Acoustic<br />
<strong>MEMS</strong><br />
ASIC<br />
Acoustic<br />
<strong>MEMS</strong><br />
© 2012 • 6<br />
X-Ray image of the PCB package<br />
X-Ray image of the top
Analysis of Die-Package Interconnexion<br />
(Package Opening)<br />
Silver-filled<br />
adhesive<br />
Solder<br />
Mask<br />
CMOS/<strong>MEMS</strong><br />
Chip<br />
Acoustic port<br />
Package Bottom portion – Optical view<br />
Package Top portion – Optical view<br />
© 2012 • 7
Analysis of Die-Package Interconnexion<br />
(Package Opening)<br />
<strong>MEMS</strong><br />
ASIC<br />
Package Opening – Optical top view<br />
Bonding material: Gold<br />
Bonding diameter: 20µm<br />
© 2012 • 8<br />
Bonding number: 5<br />
Between ASIC & Package: 3<br />
Between <strong>MEMS</strong> & ASIC: 2
Details of the <strong>MEMS</strong> Structure<br />
(package cross-section)<br />
Diaphragm<br />
Metal lid<br />
Glob-top<br />
Cavity<br />
<strong>MEMS</strong><br />
ASIC<br />
4 ML<br />
Package Cross-Section Overview<br />
The package is composed of:<br />
• A 4-layers PCB substrate (epoxy resin reinforced fiberglass (FR-4 PCB) and<br />
conductive copper layers (ML)) with embedded capacitor.<br />
• A metal lid (brass – copper/zinc alloy)<br />
© 2012 • 9
Visualization of the Package Structure<br />
(Cross-Section)<br />
Diaphragm<br />
2 ML<br />
<strong>MEMS</strong><br />
Glob-top<br />
2 ML<br />
Cavity<br />
ASIC<br />
4 ML<br />
Package Cross-Section Overview<br />
The package is composed of three portions which are formed from layers of epoxy resin<br />
reinforced fiberglass (FR-4 PCB) and conductive copper layers (ML).<br />
• The top portion is a double-sided PCB (2 metal layers)<br />
• The side portion is a double-sided PCB (2 metal layers)<br />
• The bottom portion is a 4-layers PCB (4 metal layers)<br />
© 2012 • 10
Definition of Package Materials<br />
• The top portion consists<br />
of an epoxy with Aluminum<br />
Calcium Silicate filler.<br />
•The conductive adhesive is<br />
an epoxy with Silver filler.<br />
•The non-conductive adhesive<br />
consists of an epoxy<br />
with Silicon filler.<br />
© 2012 • 11<br />
EDX Spectrum
Review of IC Technology<br />
(ASIC Transistor Details)<br />
Capacitor poly to poly<br />
ASIC die<br />
© 2012 • 12<br />
Resistor<br />
CMOS transistors
1.3 mm<br />
Visualization of Microphone Dimensions<br />
(<strong>MEMS</strong> die overview)<br />
<strong>MEMS</strong> area: 1.82 mm²<br />
1.4mm x 1.3mm<br />
<strong>MEMS</strong> thickness : 510µm<br />
Pads number : 2 connected<br />
to ASIC<br />
1.4mm<br />
© 2012 • 13
Review of the <strong>MEMS</strong> process<br />
(<strong>MEMS</strong> Surface)<br />
The cavity of the <strong>MEMS</strong> die is two-times<br />
etched by DRIE.<br />
<strong>MEMS</strong> Cavity – SEM View<br />
DRIE etching<br />
<strong>MEMS</strong> Cavity – SEM View<br />
© 2012 • 14
Analysis of Microphone Dimensions – A5<br />
Pad to connect the diaphragm with the bonding<br />
Details on the<br />
contact<br />
© 2012 • 15
Detailed Analysis of Microphone<br />
Pitch : 24µm<br />
Diameter : 19µm<br />
© 2012 • 16<br />
Acoustic Hole
Materials Analysis (Cross-Section details)<br />
Diaphragm in<br />
poly-silicon<br />
Back plate in<br />
poly-silicon<br />
SEM view : Cross-section<br />
Isolation oxide layer : 0,6µm<br />
Diaphragm polysilicon layer : 0,344µm<br />
Sacrificial oxide layer : 2,1µm<br />
Back Plate : 1,46µm<br />
Passivation oxide layer : 1,02µm<br />
Passivation nitride layer : 1,1µm<br />
The passivation oxide layer is not etched during the sacrificial<br />
etching step. It must be protected.<br />
© 2012 • 17
Review of the <strong>MEMS</strong> Process Flow<br />
Pedestal in resin<br />
•Deposition of resin on the top<br />
surface to protect them and to<br />
perform the pedestral.<br />
•DRIE etching of the cavity.<br />
Resin mask.<br />
•The buried oxide layer is<br />
etched.<br />
•The sacrificial poly-silicon layer<br />
is etched.<br />
© 2012 • 18
Review of the <strong>MEMS</strong> Process Flow<br />
Oxide<br />
(PSG)<br />
Silicon<br />
substrate<br />
Poly 1<br />
(Diaphragm)<br />
Poly 2<br />
(Backplate<br />
electrode)<br />
SiN<br />
(Backplate)<br />
© 2012 • 19
Analysis of <strong>MEMS</strong> Front-End Cost<br />
Low Yield Medium Yield High Yield<br />
<strong>MEMS</strong> Front-End<br />
Cost Breakdown Cost Breakdown Cost Breakdown<br />
Raw wafer (Si) $42.00 12.2% $42.00 12.3% $42.00 12.5%<br />
Clean Room $11.89 3.5% $11.89 3.5% $11.89 3.5%<br />
Equipment $68.30 19.9% $68.30 20.1% $68.30 20.3%<br />
Consumable $161.40 46.9% $161.40 47.4% $161.40 47.9%<br />
Salary $39.69 11.5% $39.69 11.7% $39.69 11.8%<br />
Yield losses $20.64 6.0% $17.02 5.0% $13.47 4.0%<br />
<strong>MEMS</strong> Front-End Cost $343.92 100% $340.30 100% $336.76 100%<br />
<strong>MEMS</strong> Front-End Cost Breakdown (Middle Yield)<br />
Salary<br />
12%<br />
Yield losses<br />
5%<br />
• The <strong>MEMS</strong> Front-end manufacturing cost<br />
ranges from $344 to $337 according to<br />
yield variations.<br />
Consumable<br />
47%<br />
Raw wafer (Si)<br />
12%<br />
Clean Room<br />
4%<br />
•The main part of the manufacturing cost<br />
is due to the consumables with 47%.<br />
Equipment<br />
20%<br />
© 2012 • 20
Analysis of <strong>MEMS</strong> Front-End : Material Cost<br />
by Family<br />
Material Name<br />
Material<br />
Cost<br />
Breakdown<br />
H2 $0.00 0.0%<br />
Etchant: NiCr $0.01 0.0%<br />
Etchant: Au $0.02 0.0%<br />
UPW $0.10 0.1%<br />
O2 $0.15 0.1%<br />
Ar $0.19 0.1%<br />
Cl2 $0.38 0.2%<br />
BHF $0.43 0.3%<br />
Target: NiCr $0.57 0.4%<br />
N2 $0.92 0.6%<br />
DCS $1.34 0.8%<br />
Target: Au $1.39 0.9%<br />
BCl3 $1.89 1.2%<br />
Slurry Si $3.00 1.9%<br />
SF6 $3.49 2.2%<br />
Power $3.63 2.3%<br />
NH3 $4.00 2.5%<br />
EtOH $5.50 3.4%<br />
PH3 $7.55 4.7%<br />
Developer $7.92 4.9%<br />
SC-1 $8.54 5.3%<br />
HF vapor $11.10 6.9%<br />
SiH4 $16.59 10.3%<br />
SC-2 $17.08 10.6%<br />
Photoresist $21.59 13.4%<br />
C4F8 $44.00 27.3%<br />
TOTAL $161.40 100.0%<br />
<strong>MEMS</strong> Materials Cost<br />
(Simulated with <strong>MEMS</strong> CoSim+<br />
Cost Simulation Tool)<br />
© 2012 • 21<br />
Details of the equipment cost per step are given in the Excel<br />
Spreadsheet.
Results<br />
• Reverse costing analysis represents the best cost/price evaluation given<br />
the publically available data, completed with industry expert estimates.<br />
• Given the hypothesis presented in this analysis the major sources of<br />
correction would lead to a +/- 10% correction on the manufacturing cost (if all<br />
parameters are cumulated)<br />
• IC +/- 8%<br />
• <strong>MEMS</strong> +/- 5%<br />
• Packaging +/- 10%<br />
• Test +/- 20%<br />
• These results are open for discussion and can be re-evaluated with new<br />
information, if necessary.<br />
© 2012 • 22
Budget<br />
• Budget for the reverse engineering and reverse<br />
costing of 3 to 6 devices and the comparison of<br />
technologies, manufacturing cost and<br />
infrastructure:<br />
• 6 devices: 13,000 Euro<br />
• 5 devices: 11,300 Euro<br />
• 4 devices: 9,500 Euro<br />
• 3 devices: 7,300 Euro<br />
© 2012 • 23
Added Value (1/2)<br />
• Yole Developpement is a market research, technology and strategy<br />
consulting company, founded in 1998 headquarted in Lyon, France. Our<br />
research is performed by in-house personnel conducting open-ended<br />
discussions based on interviews. We have a global customer base and a<br />
global view.<br />
Yole Développement is providing unique technical and supply & value<br />
chain analysis in order to understand the evolution of the industry and<br />
take good decision. Yole Développement has 25+ full time analysts with<br />
technical and marketing degrees and our primary research including over<br />
3,500 interviews per year. Additional to custom market & technology<br />
analysis, we also provide reports on technology, application or market as<br />
well as industry database in <strong>MEMS</strong>, Compound semiconductors, Power<br />
Electronics, LED, Advanced Packaging, PV…<br />
© 2012 • 24
Added Value (2/2)<br />
• System Plus Consulting provides reverse costing services for electronic<br />
boards, IC and <strong>MEMS</strong> devices since 1993. The company has developed specific<br />
methodologies that from reverse engineering to the estimation of the<br />
manufacturing costs and selling prices, provides an accurate, fast and yet very<br />
cost effective service.<br />
System Plus Consulting customers use its services all across the value chain to:<br />
- understand the cost structure of future products and secure their supplies<br />
- monitor competition, understand new technologies impact on their business<br />
System Plus Consulting mostly provides its services through custom services on<br />
samples of products to analyze, but also publishes a number of reports on<br />
strategic devices and systems. Its expertise can also be accessed through software<br />
solutions and databases that the company has built to support its own<br />
methodologies. These software solutions are used by external costing teams and<br />
internal reverse costing analysts.<br />
© 2012 • 25