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2012 International Conference on Environmental Engineering and Technology<br />

Advances in Biomedical Engineering, Vol.8<br />

<strong>The</strong> <strong>Analysis</strong> <strong>of</strong> <strong>the</strong> <strong>Open</strong> <strong>Circuit</strong> <strong>Voltage</strong> <strong>of</strong> <strong>Dye</strong> <strong>Sensitized</strong> <strong>Solar</strong> Cells<br />

and its Influencing Factors<br />

Tian Hanmin a ,Liu shoubin b<br />

a Department <strong>of</strong> Electronic Science and Technology,School <strong>of</strong> Information, Hebei University <strong>of</strong><br />

Technology,Tianjin, China<br />

b Nanjing College <strong>of</strong> Information Technology ,Nanjing, China<br />

tianhanmin@hebut.edu.cn, liushoubin@hotmail.com<br />

Keywords: <strong>Solar</strong> cells; <strong>Open</strong> circuit voltage;<strong>Dye</strong> sensitized<br />

Abstract. Based on <strong>the</strong> mechanism <strong>of</strong> charge transport within <strong>the</strong> solar cell, <strong>the</strong> open circuit voltage<br />

<strong>of</strong> <strong>Dye</strong> sensitized solar cells and its influencing factors are analysised. According to <strong>the</strong> measured I-<br />

V curve <strong>of</strong> a DSSC and its estimated parameter values, <strong>the</strong> influencing factors <strong>of</strong> <strong>the</strong> open circuit<br />

voltage <strong>of</strong> <strong>Dye</strong> sensitized solar cells were obtained by ma<strong>the</strong>matical interpolation and fur<strong>the</strong>r<br />

discussed.<br />

1. Introduction<br />

<strong>Dye</strong> sensitized solar cells (DSSCs) have been intensively studied in <strong>the</strong> last decade as one <strong>of</strong> <strong>the</strong><br />

most promising future energy resource due to <strong>the</strong>ir high energy efficiency, low produce cost, and<br />

simple manufacture process compared with conventional Si solar cell.<br />

However, <strong>the</strong> open circuit voltage(V oc ) <strong>of</strong> <strong>Dye</strong>-sensitized solar cells is relatively low (typically<br />

less than 1V), so that fur<strong>the</strong>r increasment <strong>of</strong> <strong>the</strong> open circuit voltage will greatly increase <strong>the</strong> overall<br />

light efficiency <strong>of</strong> dye-sensitized solar cell. Till current, <strong>the</strong> nature <strong>of</strong> V oc and its influencing factors<br />

are little reported [1,2].<br />

M. Grätzel and his research group considered that <strong>the</strong> maximum open circuit voltage <strong>of</strong> DSSC, in<br />

<strong>the</strong>ory, depends on <strong>the</strong> TiO 2 Fermi level and electrolyte redox potential difference [1]. However, in<br />

<strong>the</strong> presence <strong>of</strong> load conditions, <strong>the</strong> electrode potential is lower than <strong>the</strong> <strong>the</strong>orical open cases. This is<br />

because <strong>the</strong> current loss in <strong>the</strong> electrolyte (that is, a large number <strong>of</strong> current transfer overpotential,<br />

Mass-transfer overpotential (η mt ), and electrolyte-electrode interface loss (kinetic overpotential(η ct )).<br />

For example, Hoshikawa found <strong>the</strong> electrolyte with LiI led to <strong>the</strong> addition <strong>of</strong> V oc reduction, and t-<br />

BuPy concomitting <strong>the</strong> V oc decreasation [3]. Ano<strong>the</strong>r experimental finding to significantly improve<br />

<strong>the</strong> open circuit voltage was depositing fine TiO 2 laryer on <strong>the</strong> semiconductor-FTO interface[4].<br />

<strong>The</strong>se experimental results led us to consider what mechanism led to <strong>the</strong> change in V oc . In this<br />

paper, based on <strong>the</strong> mechanism <strong>of</strong> charge transport within <strong>the</strong> solar cell, <strong>the</strong> open circuit voltage <strong>of</strong><br />

<strong>Dye</strong> sensitized solar cells and its influencing factors are analysised.<br />

2. <strong>The</strong>oretical analysis<br />

As shown in Figure 1, N-type semiconductor and <strong>the</strong> electrolyte will change <strong>the</strong> band before and<br />

after contact, and <strong>the</strong>re is a surface recombination current. <strong>The</strong> surface recombination current J r<br />

depends on electron back-propagation constant K et , <strong>the</strong> concentration <strong>of</strong> redox C ox , light<br />

semiconductor light-free electron concentration n and <strong>the</strong> difference between <strong>the</strong> concentration <strong>of</strong><br />

semiconductor n 0 , in which <strong>the</strong> redox reaction rate, <strong>the</strong> electron transfer rate and <strong>the</strong> reaction rate is<br />

<strong>the</strong> exponential function, with coefficients <strong>of</strong> magnitude m, u, a, as shown in equition 1<br />

978-1-61275-026-2/10/$25.00 ©2012 IERI ICEET 2012<br />

59


m uα<br />

uα<br />

Jr = qk<br />

etCox<br />

( n −n0<br />

)<br />

(1)<br />

<strong>The</strong> light <strong>of</strong> current density J ph is obtained by <strong>the</strong> following formula:<br />

Jph = Jinj − Jr<br />

(2)<br />

in which, J inj : <strong>the</strong> current density <strong>of</strong> dye injected into <strong>the</strong> semiconductor; J r : <strong>the</strong> surface<br />

recombination current. J inj is proportional incident photon flux I 0 (cm -2 s -1 ) <strong>of</strong> <strong>the</strong> DSSC, as shown<br />

equition 3. q is <strong>the</strong> electron charge, A is <strong>the</strong> optical absorption coefficient <strong>of</strong> I 0<br />

J = qAI<br />

(3)<br />

<strong>The</strong> photoelectron density n in <strong>the</strong> titanium dioxide semiconductor films is <strong>the</strong> exponential<br />

function <strong>of</strong> voltage V = E f - E f0 . E f and E f0 are <strong>the</strong> corresponding Fermi level <strong>of</strong> titanium dioxide in<br />

<strong>the</strong> light and dark conditions. Because <strong>of</strong> <strong>the</strong> macro-homogeneous nanocrystalline thin films, <strong>the</strong><br />

porous membrane ion diffusion effect is not affected by internal differences in <strong>the</strong> impact <strong>of</strong> nanocrystalline,<br />

so <strong>the</strong> nanocrystalline thin films are ideal as a homogeneous block proliferation <strong>of</strong><br />

materials [4].<br />

= exp( qV<br />

n n )<br />

0<br />

kT<br />

Where K is <strong>the</strong> Boltzmann constant, T is absolute temperature.<br />

so, forumla 5 is got by formula 1 to 4:<br />

inj<br />

m uα<br />

uα<br />

J<br />

ph<br />

= qAI0 − qKetCox<br />

( n − n0<br />

)<br />

(5)<br />

So, <strong>the</strong> ideal dye-sensitized solar cell current - voltage relationship is derived by <strong>the</strong> formula 4<br />

and 5 as formula 6.<br />

m ⎧ qV ua ua ⎫<br />

J<br />

ph<br />

= qAI0 − qKetcox<br />

⎨[ n0 exp( )] − n0<br />

⎬<br />

⎩ kT ⎭<br />

(6)<br />

m ua ⎧ uaqV ⎫<br />

= qAI0 − qKetcox<br />

n0<br />

⎨exp( ) −1<br />

⎬<br />

⎩ kT ⎭<br />

Taking into account <strong>the</strong> contact resistances between gate line, conductive substrate and<br />

semiconductor electrode, and <strong>the</strong> recombinations <strong>of</strong> charge carriers in <strong>the</strong> electrolyte and in <strong>the</strong><br />

interfaces <strong>of</strong> electrolyte and electrodes, <strong>the</strong> actual DSSC current J can be derived with <strong>the</strong><br />

consideration <strong>of</strong> series resistance (R s ) and parallel resistance (R sh ) as formula 7.<br />

m ua ⎧ ua( V + JRs<br />

)<br />

J = qAI0 − qKetcoxn0<br />

⎨exp( q )<br />

⎩ KT<br />

(7)<br />

⎫ V + JRs<br />

-1 ⎬ −<br />

⎭ Rsh<br />

0<br />

(4)<br />

Conduction Band<br />

E F<br />

O x<br />

V B<br />

O x<br />

E g<br />

Red<br />

Valence Band<br />

helmholtz<br />

Depletion<br />

Layer<br />

Layer<br />

Semiconductor Electrolyte Semiconductor Electrolyte<br />

a<br />

b<br />

E g<br />

Figure. 1 Energy band change <strong>of</strong> N semiconductor and electrolyte<br />

contractions. (a). before contact. (b). after contact.<br />

E F<br />

Red<br />

60


3. Experimental analysis and discussion<br />

It is difficult to get <strong>the</strong> explicit expression <strong>of</strong> V or V oc by J and also difficult to get its numerical<br />

solution, for equation 7 <strong>of</strong> DSSCs is a complicated exponential-type implicit function. However, we<br />

can obtain <strong>the</strong> influencing factors <strong>of</strong> <strong>the</strong> open circuit voltage <strong>of</strong> <strong>Dye</strong> sensitized solar cells by<br />

ma<strong>the</strong>matical interpolation based on <strong>the</strong> experimental measured I-V data and formula 7.<br />

According to <strong>the</strong> measured I-V curve <strong>of</strong> a DSSC and its estimated parameter values, which <strong>the</strong><br />

fabriaction method was same as literature [5], by stepwise changing <strong>the</strong> value <strong>of</strong> each parameter in<br />

formula 7 and fixing <strong>the</strong> values <strong>of</strong> <strong>the</strong> o<strong>the</strong>r equivalent circuit parameters, <strong>the</strong> influence <strong>of</strong> this<br />

parameter on <strong>the</strong> I-V curve is <strong>the</strong>refore quantificational revealed by ranking <strong>the</strong>se curves toge<strong>the</strong>r.<br />

m ua<br />

With more calculation and comparation, it was found qKetcoxn0<br />

significantly influences <strong>the</strong> V oc <strong>of</strong><br />

<strong>the</strong> I-V curve, as shown in figure 2, which is co-directionally moved following <strong>the</strong> variety <strong>of</strong><br />

m ua<br />

m ua<br />

qKetcoxn 0<br />

. However when qKetcoxn0<br />

increases, no obvious change is observed in I sc , FF and <strong>the</strong><br />

shape <strong>of</strong> I-V curve.<br />

Fur<strong>the</strong>r analysis showed that <strong>the</strong> exponential function magnitude coefficients, <strong>of</strong> electron transfer<br />

rate <strong>of</strong> <strong>the</strong> reaction rate, u, a , influenced V oc more significantly, as shown in figure 3.<br />

While, o<strong>the</strong>r parameters, such R s ,R sh , A and I 0 , do not affect <strong>the</strong> open circuit voltage, but to<br />

change short circuit current and fill factor <strong>of</strong> DSSC.<br />

<strong>The</strong>refore, we believe that, improving <strong>the</strong> electron back-propagation constant K et , <strong>the</strong> electrolyte<br />

redox concentration C ox , <strong>the</strong> semiconductor light-free concentration n 0 , or decreasing <strong>the</strong> exponential<br />

function magnitude coefficients <strong>of</strong> electron transfer rate <strong>of</strong> <strong>the</strong> reaction rate , u, a, will enhance <strong>the</strong><br />

open circuit voltage <strong>of</strong> DSSC.<br />

12<br />

10<br />

8<br />

Current[mA]<br />

6<br />

4<br />

128M<br />

M<br />

2<br />

0.008M<br />

0<br />

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br />

Vol tage[V]<br />

Figure. 2 <strong>the</strong> calculated influence <strong>of</strong><br />

m ua<br />

qK c n to <strong>the</strong> open circuit voltage and <strong>the</strong> I-V curve.M=<br />

m ua<br />

0<br />

qK c n in <strong>the</strong> figure<br />

0<br />

et ox<br />

et ox<br />

61


12<br />

10<br />

8<br />

Current[mA]<br />

6<br />

1.8/ua<br />

4<br />

1/ua<br />

2<br />

0.4/ua<br />

0<br />

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br />

Vol tage[V]<br />

Figure. 3 <strong>the</strong> calculated influence <strong>of</strong> u,a to <strong>the</strong> open circuit voltage and <strong>the</strong> I-V curve.<br />

Some studies have shown a great impact <strong>of</strong> <strong>the</strong> electrolyte redox concentration C ox on DSSC<br />

performance. For example, Hoshikawa found additional LiI in <strong>the</strong> electrolyte led to <strong>the</strong> addition <strong>of</strong><br />

V oc reduction, t-BuPy with <strong>the</strong> V oc decreased [3]. Liu and Zaban belived that <strong>the</strong> electrolyte in <strong>the</strong><br />

DSSC roles not only in <strong>the</strong> hole transport between <strong>the</strong> positive and negative, but also through <strong>the</strong><br />

shielding effect promote electrons which has been injected into <strong>the</strong> TiO 2 electrode move smoothly in<br />

<strong>the</strong> TiO 2 porous membrane [6]. In short, both Hoshikawa and we showed that by increasing <strong>the</strong><br />

electrolyte concentration <strong>of</strong> redox C ox will help to enhance <strong>the</strong> open circuit voltage <strong>of</strong> DSSC.<br />

Although we derived <strong>the</strong> current - voltage formula for V oc according to solid state physics to<br />

enhance <strong>the</strong> expression (formulas 7), but it is also noted that <strong>the</strong>re exists controversy in <strong>the</strong> current<br />

DSSC researchers on <strong>the</strong> source <strong>of</strong> open circuit voltage. Some scholars believe that <strong>the</strong> voltage<br />

comes from <strong>the</strong> chemistry <strong>of</strong> chemical potential gradient [2], who pointed out that <strong>the</strong> DSSC were<br />

significantly different with <strong>the</strong> traditional pn-junction cells, while most <strong>of</strong> o<strong>the</strong>rs, such as Grätzel,<br />

discusses that DSSC has <strong>the</strong> similarities and differences with traditional pn junction cell but<br />

essentially similar, as derived in this paper [7,8].<br />

4. Conclusions<br />

<strong>The</strong> influencing factors <strong>of</strong> <strong>the</strong> open circuit voltage <strong>of</strong> <strong>Dye</strong> sensitized solar cells were obtained<br />

according to <strong>the</strong> measured I-V curve by ma<strong>the</strong>matical interpolation and was fur<strong>the</strong>r discussed.<br />

Improving <strong>the</strong> electron back-propagation constant K et , <strong>the</strong> electrolyte redox concentration C ox , <strong>the</strong><br />

semiconductor light-free concentration n 0 , or decreasing <strong>the</strong> exponential function magnitude<br />

coefficients <strong>of</strong> electron transfer rate <strong>of</strong> <strong>the</strong> reaction rate , u, a, will enhance <strong>the</strong> open circuit voltage <strong>of</strong><br />

DSSC.<br />

5. Acknowledgment<br />

<strong>The</strong> authors would like to acknowledge financial support from Start Fund <strong>of</strong> Hebei University <strong>of</strong><br />

technology, as well as to thank Mr. Tianxuemin and Mr. Wangxiaoqi for <strong>the</strong>ir helpful discussions.<br />

References<br />

[1] Cahen, D., et al., Nature <strong>of</strong> photovoltaic action in dye-sensitized solar cells. Journal <strong>of</strong> Physical<br />

Chemistry B, 2000. 104(9): p. 2053-2059.<br />

62


[2] Pichot, F. and B.A. Gregg, <strong>The</strong> photovoltage-determining mechanism in dye-sensitized solar<br />

cells. Journal <strong>of</strong> Physical Chemistry B, 2000. 104(1): p. 6-10.<br />

[3] Hoshikawa, T., R. Kikuchi, and K. Eguchi, Impedance analysis for dye-sensitized solar cells<br />

with a reference electrode. Journal <strong>of</strong> Electroanalytical Chemistry, 2006. 588(1): p. 59-67.<br />

[4] Yu.A. Chizmadzhev, Y.G.C., Comprehensive Treatise <strong>of</strong> Electrochemistry. New York,Plenum<br />

Press, 1983. 6: p. 353.<br />

[5] Hanmin, T. and et al., Influence <strong>of</strong> capacitance characteristic on dye-sensitized solar cell's IPCE<br />

measurement. Journal <strong>of</strong> Physics D: Applied Physics, 2009. 42(4): p. 045109.<br />

[6] Liu, Y., et al., Investigation <strong>of</strong> influence <strong>of</strong> redox species on <strong>the</strong> interfacial energetics <strong>of</strong> a dyesensitized<br />

nanoporous TiO 2 solar cell. <strong>Solar</strong> Energy Materials and <strong>Solar</strong> Cells, 1998. 55(3): p.<br />

267-281.<br />

[7] Green, M.A., Photovoltaic principles. Physica E-Low-Dimensional Systems & Nanostructures,<br />

2002. 14: p. 11-17.<br />

[8] Archer, M.D., Photovoltaics and photoelectrochemistry:similarities and di¬erences. Physica E-<br />

Low-Dimensional Systems & Nanostructures, 2002. 14: p. 61-64.<br />

63

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