High Performance, Low Cost PIN, APD Receivers in Fiber Optical ...

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Planar Separate Absorption, Multiplication (SAM) APD Structure p-metal SiNx layer P+ Diffusion Guard Ring n- InP cap layer n+ InP Multi. n- InGaAsP layer n- InGaAs abs. layer n+ InP Buffer n+ InP Sub. AR coating n-metal WOCC-2005
Planar SACM/SACGM APD • InGaAs/InP Two-step MOCVD • Planar Structure • Etch and Regrowth Charge and Multiplication Region • Diffusion controlled Multiplication Layer (single Diffusion or Well Etching- Diffusion) • Xd ~ 0.2-0.4 µm • GB product = 122 GHz • Noise Ratio k~0.45 • No Implant tcharge n-Metal AR SiO 2 p+ InP Xj n- InP Multiplication n InP Charge Grading Layer n InGaAs n- InGaAs Absorption n- InP Buffer n+ InP Substrate Xd tmesa tInGaAs tBuffer WOCC-2005
Page 1 and 2: High Performance, Low Cost PIN, APD
Page 3 and 4: Photodetectors and Optical Receiver
Page 5 and 6: Photoreceiver Sensitivities v.s. Bi
Page 7 and 8: Industry Standard Top-illuminated P
Page 9 and 10: Waveguide Photodetectors (WGPDs)
Page 11 and 12: Multiplication Process Enhance Perf
Page 13: How does APD Enhance Rx Sensitivity
Page 17 and 18: Wafer-Fused SHIP APD • Silicon He
Page 19 and 20: Planar InGaAlAs/InAlAs MQW APD •
Page 21 and 22: Real-World APD Device Specification
Page 23 and 24: APD Design- Balance between Trade-o
Page 25 and 26: Failure Rates vs. Activation Energy
Page 27 and 28: APD & PIN MSA Receivers • Key Adv
Page 29 and 30: 0.5 8 6 0.4 8 6 0.3 8 6 0.2 8 6 0.1
Page 31 and 32: Next Generation MSA Receiver & ROSA
Page 33 and 34: Path Penalty after 100 km Fiber Rec
Page 35 and 36: Advancement in Access Speed (bit/s)
Page 37 and 38: FTTP Market Market: North America:

High Performance, Low Cost PIN, APD Receivers in Fiber Optical ...

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