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plastic silicon rectifiers s07b--s07m

plastic silicon rectifiers s07b--s07m

plastic silicon rectifiers

Production specification PLASTIC SILICON RECTIFIERS S07B--S07M FEATURES • Glass passivated device • Ideal for surface mounted applications • Low leakage current • Metallurgically bonded construction • High temperature soldering: 250℃/10 seconds at terminals MECHANICAL DATA • Case: JEDEC SOD-123FL,molded plastic over passivated chip • Terminals: Solder Plated, solder perMIL-STD-750, Method 2026 • Weight: 0.006 ounces, 0.02 gram • Marking:D7 Pb Lead-free . Maximum Ratings(@TA = 25°C unless otherwise specified) Characteristic Symbol S07B S07D S07G S07J S07M UNITS Maximum recurrent peak reverse voltage V RRM 100 200 400 600 1000 V Maximum RMS voltage V RMS 70 140 280 420 700 V Maximum DC blocking voltage V DC 100 200 400 600 1000 V Maximum average ford rectified current T A =65℃ (NOTE 1) I (AV) 1.0 A Peak forward surge current 8.3ms single half-sine-wave I FSM 30 A superimposed on rated load T L =25℃ Thermal Characteristics Characteristic Symbol S07B S07D S07G S07J S07M UNITS Typical junction capacitance (NOTE 3) C J 4 p F Typical thermal resistance (NOTE 5) R θJA 180 ℃/W Operating temperature range T J - 55 --- + 150 ℃ Storage temperature range T STG - 55 --- + 150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol S07B S07D S07G S07J S07M UNITS Maximum instantaneous (NOTE 2) forward voltage at 1.0A V F 1.1 V Maximum DC reverse current @T A =25℃ at rated DC blocking voltage @T A =125℃ I R 10.0 50 μ A Maximum reverse recovery time (NOTE4) t rr 1.8 μ s NOTES: 1 .Averaged over any 20 ms period. 2.Pulse test:300μs pulse width,1% duty cycle 3. Measured at 1.0MHz and applied average voltage of 4.0V DC. 4. Measured with I F =0.5A, I R =1A, I rr =0.25A. 5. Thermal resistance junction to ambient, 6.0 mm 2 coppeer pads to each terminal. Document Number: SOD002AA www.gmicroelec.com 1

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