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Field Solver for MPGDs<br />

GEM<br />

Typical dimensions:<br />

Electrodes (5 μm thick)<br />

Insulator (50 μm thick)<br />

Hole size D ~ 60 μm<br />

Pitch p ~ 140 μm<br />

Induction gap: 1.0 mm,<br />

Transfer gap: 1.5 mm<br />

Micromegas<br />

Typical dimensions:<br />

Mesh size: 50 μm<br />

micromesh sustained<br />

by 50 μm pillars<br />

Some <strong>of</strong> the expected features are as follows<br />

1. Handle large variation in length scales (a<br />

micron to a meter)<br />

2. Make available, on demand, properties at<br />

arbitrary locations (near- and far-field)<br />

3. Model intricate geometrical features using<br />

triangular elements as and when needed<br />

4. Model multiple dielectric devices<br />

5. Model nearly degenerate (closely packed)<br />

surfaces<br />

6. Model space charge effects<br />

7. Model dynamic charging processes<br />

8. Compute field for the same geometry, but<br />

with different electric configuration,<br />

repeatedly<br />

The de‐facto standard FEM is unsatisfactory in<br />

dealing with 1., 2., 5., 6., 7. and 8. Hence, the<br />

search for a new tool.


Field Solver<br />

Solution <strong>of</strong> 3D Poisson's Equation using a recently proposed BEM - neBEM<br />

• Numerical implementation <strong>of</strong> boundary integral equations (BIE) based on Green’s<br />

function by discretization <strong>of</strong> boundary.<br />

• Boundary elements endowed with distribution <strong>of</strong> sources, doublets, dipoles, vortices.<br />

Potential at r<br />

Electrostatics BIE<br />

Φ( r)<br />

= ∫ G(<br />

r,<br />

r′<br />

) ρ ( r′<br />

) dS ′<br />

S<br />

Green’s function<br />

G ( r , r ′)<br />

=<br />

4 πε<br />

1<br />

r<br />

−<br />

r<br />

′<br />

Charge density at r’<br />

Influence<br />

Coefficient<br />

Matrix<br />

discretization<br />

[ A]{ ρ} = { Φ}<br />

{ρ} = [A] -1 {Φ}<br />

ε - permittivity <strong>of</strong> medium<br />

Accuracy depends critically on the<br />

estimation <strong>of</strong> [A], in turn, the<br />

integration <strong>of</strong> G, which involves<br />

singularities when r → r'.<br />

Most conventional BEM solvers fail<br />

here leading to large numerical errors.


Contrast <strong>of</strong> approaches<br />

Conventional BEM (nodal) versus nearly exact BEM (distributed)<br />

We have derived exact expressions for<br />

the integration <strong>of</strong> G and its derivative<br />

for uniform charge distributions over<br />

triangular and rectangular elements<br />

Conventionally, charges are assumed to be<br />

concentrated at nodes. This is convenient<br />

since the preceding integration is avoided.<br />

Introduces large errors in the near field.


Micromegas<br />

Electrostatics <strong>of</strong> MPGDs<br />

Micro‐Wire<br />

200<br />

180<br />

160<br />

neBEM<br />

FEM<br />

Theoretical considerations<br />

imply better performance by<br />

the neBEM solver which<br />

solves for the charge density<br />

on boundary elements rather<br />

than potential at a pre‐fixed<br />

set <strong>of</strong> nodal points.<br />

140<br />

E (kV/cm)<br />

140<br />

120<br />

100<br />

80<br />

60<br />

40<br />

20<br />

0<br />

20 40 60 80 100 120 140<br />

Y (µm)<br />

FEM: gap = 32µm<br />

gap = 40µm<br />

gap = 65µm<br />

gap = 75µm<br />

gap = 85µm<br />

neBEM: gap = 32µm<br />

gap = 40µm<br />

gap = 65µm<br />

gap = 75µm<br />

gap = 85µm<br />

E (kV/cm)<br />

Total E field (kV/cm)<br />

120<br />

100<br />

80<br />

60<br />

40<br />

20<br />

0<br />

-100 0 100 200 300 400 500 600 700<br />

Y (µm)<br />

300<br />

280<br />

260<br />

240<br />

220<br />

200<br />

180<br />

160<br />

140<br />

120<br />

100<br />

80<br />

neBEM Segmented<br />

FEM Segmented<br />

neBEM Mesh<br />

FEM Mesh<br />

60<br />

0 100 200 300 400 500 600<br />

Distance * 10 micron<br />

Numerical comparisons<br />

1) neBEM results are as<br />

accurate as FEM results in the<br />

far‐field<br />

2) In the near‐field, neBEM<br />

performs better than FEM<br />

3) No artificial truncation <strong>of</strong><br />

open domain is necessary<br />

while using neBEM


Plans for the near future<br />

‣ Development <strong>of</strong> an interface to ROOT so that devices built using ROOT<br />

can be directly imported to neBEM and solved for<br />

‣ Study dynamic charging<br />

‣ Improve upon Particles‐on‐Surface – a model to represent space charge<br />

‣ Simulate problems related to magnetostatics<br />

‣ A working interface to garfield and the new detailed detector simulation<br />

framework is expected to be complete by the middle <strong>of</strong> 2009<br />

‣ We will also try to set up an experimental laboratory for the development<br />

<strong>of</strong> MPGD as soon as possible<br />

Supratik Mukhopadhay, Nayana Majumdar, Sudeb Bhattacharya<br />

<strong>Saha</strong> <strong>Institute</strong> <strong>of</strong> <strong>Nuclear</strong> <strong>Physics</strong>, Kolkata, India<br />

E‐mails: supratik.mukhopadhyay@saha.ac.in, nayana.majumdar@saha.ac.in, sudeb.bhattacharya@saha.ac.in

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