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DS18B20-PAR 1-Wire Parasite-Power Digital Thermometer

DS18B20-PAR 1-Wire Parasite-Power Digital Thermometer

DS18B20-PAR 1-Wire Parasite-Power Digital Thermometer

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ABSOLUTE MAXIMUM RATINGS*<strong>DS18B20</strong>-<strong>PAR</strong>Voltage on any pin relative to ground –0.5V to +6.0VOperating temperature–55C to +100CStorage temperature–55C to +125CSoldering temperatureSee J-STD-020A Specification*These are stress ratings only and functional operation of the device at these or any other conditionsabove those indicated in the operation sections of this specification is not implied. Exposure to absolutemaximum rating conditions for extended periods of time may affect reliability.DC ELECTRICAL CHARACTERISTICS(-55°C to +100°C; V PU =3.0V to 5.5V)<strong>PAR</strong>AMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTESPullup SupplyV PU 3.0 5.5 V 1,2Voltage<strong>Thermometer</strong> Error t ERR -10°C to +85°C ±½ °C 3-55°C to +100°C ±2Input Logic Low V IL -0.3 +0.8 V 1,4,5Input Logic High V IH 3.0 5.5 V 1,6Sink Current I L V I/O =0.4V 4.0 mA 1Active Current I DQA 1 1.5 mA 7DQ Input Current I DQ 5 µA 8Drift ±0.2 °C 9NOTES:1. All voltages are referenced to ground.2. The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) isideal, and therefore the high level of the pullup is equal to V PU . In order to meet the V IH spec of the<strong>DS18B20</strong>-<strong>PAR</strong>, the actual supply rail for the strong pullup transistor must include margin for thevoltage drop across the transistor when it is turned on; thus: V PU_ACTUAL = V PU_IDEAL + V TRANSISTOR .3. See typical performance curve in Figure 16.4. Logic low voltages are specified at a sink current of 4 mA.5. To always guarantee a presence pulse under low voltage parasite power conditions, V ILMAX may haveto be reduced to as low as 0.5V.6. Logic high voltages are specified at a source current of 1 mA.7. Active current refers to supply current during active temperature conversions or EEPROM writes.8. DQ line is high (“hi-Z” state).9. Drift data is based on a 1000 hour stress test at 125°C.AC ELECTRICAL CHARACTERISTICS: NV MEMORY(-55°C to +100°C; V PU =3.0V to 5.5V)<strong>PAR</strong>AMETER SYMBOL CONDITION MIN TYP MAX UNITSNV Write Cycle Time t wr 2 10 msEEPROM Writes N EEWR -55°C to +55°C 50k writesEEPROM Data Retention t EEDR -55°C to +55°C 10 years17 of 19

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