radiation effects in sige devices - Institute for Space and Defense ...

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TID Damage (Forward-mode) G/R traps at EB-spacer excess base current (ΔI B /I B0 ) No degradation at circuit-relevant bias (J C near peak f T )Forward ModeForward-Mode ΔI B /I B0 samples the EB-spacer oxideJohn D. Cressler, 5/25/10 10
ac Per<strong>for</strong>mance Metrics No change <strong>in</strong> f T , f MAX , r bb , or τ f lack of dopant deactivation John D. Cressler, 5/25/10 11
Page 1 and 2: Radiation Effects inSiGe DevicesSta
Page 3 and 4: SiGe Strain EngineeringThe Bright I
Page 6 and 7: EE Electronics Space-Based Electron
Page 8 and 9: TID Damage MechanismsPrimary Damage
Page 12 and 13: Scaling Effects ΔI B /I B0 has a n
Page 14 and 15: SiGe TID Summary SiGe HBTs are inhe
Page 16 and 17: Single Event Effects• Observed SE
Page 18 and 19: TRIBICC Measurements• Directly Ca
Page 20 and 21: Outline• SiGe HBT Technology & Ex
Page 22 and 23: NRING IBICC Results• Charge Colle
Page 24 and 25: Exterior Transients• Transients I
Page 26 and 27: Circuit Implications• Digital vs.
Page 28 and 29: Microbeam Results• Two Distinguis
Page 30 and 31: Shift Register Simulations• Model
Page 32 and 33: Modeling & Measurement• IMC with
Page 34 and 35: Digital CircuitsSimple device modif
Page 36 and 37: Circuit SET Modeling• Approaches
Page 38 and 39: SET in a SiGe BGR• Transient resp
Page 40 and 41: Mixed-mode vs. Spectre• Schematic
Page 42 and 43: Publications2009 Papers[1] A. Appas
Page 44 and 45: PublicationsMore 2009 Papers[14] M.

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