National Academy of Sciences of Ukraine

National Academy of Sciences of Ukraine

National Academy of Sciencesof UkraineAthens, 10 April 2008

Growth technology• Institute for Single Crystals, Kharkov:1. Low temperature deposition of SiC films2. Large KDP crystals with maximum laser damagethreshold for high power lasers

Direct Ion Plasma Deposition of the SiCFilmsSamples of optical elementswith protective SiC films

LARGE KDP CRYSTALS WITH MAXIMUMLASER DAMAGE THRESHOLD FOR HIGHPOWER LASERSKDP and DKDP are the only materials suitable for fabrication ofdoublers and triplers of laser radiation frequency and Pockels cells,the laser strength of which is over 40 J/cm 2 (at λ=1.06 μm, τ=3 ns).A unique industrial technology of the 8-12 mm/day rapid growth oflarge KDP single crystals (~ 60,0 cm) with the laser damagethreshold of ~50 J/cm 2 for usage in mega joule lasers.

Growth technology• Institute for Scintillation Materials,Kharkov:1. Microwave assisted organic synthesis of heterocycliccompounds2. Chiral components for twisted nematic liquid crystals3. Development of basic physics for productiontechnology of new scintillation materials – thin layerson substrates and combined detectors on their basefor radionuclide monitoring of environment

Elaboration of high-resolution luminescence screens for X-Xray imaging and new-type detectors for the simultaneousregistration of the α-, β- and γ-particles separated by pathlength and decay time. Such portable detectors areperspective for radiation monitoring of environment, fordetecting mixed radiation fluxes near nuclear objects, forexploring α-, β- decay simultaneously with other nuclearreactions.Left: Scheme of scintillation block based on phoswich detector: 1, 2 –different scintillation layers, 5 – photoreceiver. Right: General view of thecorresponding scintillation module (portable version).

Growth technology• Institute of Semiconductor Physics, Kiev:1. Nanocrystalline silicon (nc(nc-Si) ) films obtained by pulsedlaser deposition2. Development of efficient methods for nanostructureformation based on II-VI wide band-gapsemiconductors

Growth technology• Donetsk Physics & Technology Institute:1. Oxide multi-componentnanosize particles, ceramicsand composites for functional application

Fabrication technology• Institute of Semiconductor Physics, Kiev:1. Method of semiconductor substrate treatment withoutobtaining any deformation and surface defects2. Optimization of Cd x Hg 1-x Te semiconductor parametersby pulsed laser irradiation and device structuresformation for infrared photoelectronics3. Laser-induced doping and formation of electricalbarriers in CdTe crystals for manufacturing X-Xandgamma-rays detectors

Institute of Semiconductor Physics, Kiev:4. Transformation of the defect system in semiconductorswith shock waves induced by nanosecond laser pulses5. Processes of formation and self-organisationofnanostructures in II-VI and III-V V crystals and filmsunder pulse laser irradiation6. Advanced materials for metallization of semiconductordevices7. Application of chemical transport reactions insemiconductor technology for metallization of diamondand production of high efficient diamond tools

Institute of Semiconductor Physics, Kiev:9. Unglued bonding technology for glass ceramicmaterials with zero thermal expansion coefficient10. Development of fabrication methods of InAs diffusionphotodiodes

Fabrication technology• Institute of Physics, Kiev:1. Development of low temperature photo-alignment process forplastic LCDs and other liquid crystal devices2. Inorganic nanolithography with holographic elements forenhancement of optic and infrared signals3. Creation of highly sensitive reverse registering mediums foroptical holography based on polymer semiconductors4. Effects of laser induced plasma in machining of transparentmaterials5. Development of magnetron technology and manufacturing ofvacuum line for deposition of decorative and selective coatingsonto architecture glass

Fabrication technology• Institute for Low Temperature Physicsand Engineering, Kharkov:1. Magnetic recording by formation of local currentvortices in superconductors

B.Verkin Institute for Low Temperature Physics& Engineering,National Academy of Sciences of Ukraine1. Electron phenomena in conducting andsuperconducting media2. Physics of quantum liquid, quantumcrystals and cryocrystals3. Low temperature magnetism4. Mathematical Physics5. Geometry and Topology6. Low temperature material science7. Devices and apparatus for lowtemperatures

Devices and Equipment• Institute of Radiophysics and Electronics,Kharkov:1. Noncontact system for measuring temperaturegradient on internal layers of objects2. Millimeter-wave device for standard measurement ofHTS film surface resistance3. Analysis of evaporation and coating depositionmethods by Double-Beam Multi-Capsule ElectronEvaporator for high-vacuum film technologies

Devices and Equipment• Institute for Scintillation Materials,Kharkov:1. Novel UV-detectors based on isovalently doped zincselenide for photo-biological safety systems2. Promising oxide scintillators (OXS) and elements ontheir base for radiation instruments

Promising oxide scintillators (OXS) and elementson their base for radiation instrumentsApplication fields:anti-terrorist inspection, X-ray introscopy andtomographydetection of illegaltransportation of radioactivesubstances (including neutron)nuclear spectrometryradiation monitoring

Devices and Equipment• Institute for Single Crystals, Kharkov:1. Development of equipment and technology for growthof CdZnTe crystals for fabrication gamma-radiationsensors

The development of equipment andtechnology to obtain CdZnTe crystals forfabrication of gamma-radiation sensorsAimed at new growth furnace construction and relatedtechnology process. High-qualityCdZnTe crystals obtained willbe used in compact, uncooled gamma-sensors for industrial,medical and scientific needs.

Devices and Equipment• Institute of Semiconductor Physics,Kiev:1. Development of technology and intelligent analyticalcomplex for digital detection of odours2. Radioluminescent indicating devices emitting in visibleor near-infrared region3. Development of acoustic universal adaptive modulecomplex for multifunctional applications4. Method of production of SiC-based complex opticalmirrors

Devices and Equipment• Institute of Physics, Kiev:1. Chemical sensors based on porous semiconductorheterojunctions for determination of composition ofliquid and gaseous mixtures

Characterization technique• Institute of Semiconductor Physics,Kiev:1. Development of the method for speckle-interferometricmeasurements of quasi-static static shifts and vibrationparameters of high porous and other materials2. Design of portable optical instruments for express-diagnostics of viral cattle deseases

Characterization technique• Institute for Low Temperature Physicsand Engineering, Kharkov:1. SQUID-based system for non-destructive evaluation ofthe construction materials in power engineering2. Creation of complex equipment for investigation ofradiation stability of materials (CE RSM)

Development and research on SQIUD – basedsystem for nondestructive evaluationof the construction materials in power engineeringPrototype of portable high-Tc (HTS)SQUID-magnetometer was designedand is used for fatigue degradationdetecting of stainless steel samples incooperation with Korean Atomic EnergyResearch Institute (KAERI).Features:Liquid nitrogen cooling of sensorMagnetic field sensitivity ≈ 5·10 -13 T/Hz 1/2Magnetic moment sensitivity ≈ 5·10 -10 A·m 2Low weightLow costEasy to handle

Low Temperature Laser Scanning MicroscopeTechnical characteristics:• Temperature range: 4.2 – 300 K;• Spatial resolution: 0.3 mm;• Scanned area: 50mm x 50mm;• Sample dimensions: up to 50 mm;• Spectral range: UV, VIS, IR.Application fields:• Reflected Light and LaserScanning Microscopy• UV, VIS, IR and RamanSpectroscopy• Material Science and Solid-StateStatePhysics• Failure and defect analysis insuperconducting films and planarDC/rfdevices

Optical cryostats for low-temperature microandspectroscopy

Characterization technique• Institute for Single Crystals, Kharkov:1. Elaboration of the method for determination of totalcontent for soluble and suspended substances innatural and drinking water

The method based on measuring the lengthof the opaque part of the ice ingot (Fig. 1),obtained by means of low-temperaturedirected crystallization (LTDC).The proposed method is extremely simple,easily automated and fast in comparisonwith other methods. It securesdetermination of TCS within 2-32hours in awide range – from 0,05 up to 4,00 g/L –using only 50 mL of water sample.It is not necessary to provide anypreliminary sample preparation (preserving,heat or chemical treatment) beforecarrying out LTDC.The existing pilot unit has simple designand can be easily upgraded.Ice ingot with opaque part

Characterization technique• Institute of Physics, Kiev:1. Development of new technique for detection of aminute amounts of Iodine-129 in natural specimen ofgaseous Iodine

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