SiZ700DT N-Channel 20-V (D-S) MOSFETs

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SiZ700DT N-Channel 20-V (D-S) MOSFETs

New ProductSiZ700DTVishay SiliconixN-Channel 20-V (D-S) MOSFETsPRODUCT SUMMARYV DS (V) R DS(on) (Ω) I D (A) Q g (Typ.)Channel-1 20Channel-2 2060.0086 at V GS = 10 V 16 a 9.5 nC0.0108 at V GS = 4.5 V 16 a0.0058 at V GS = 10 V 16 a 27 nC0.0066 at V GS = 4.5 V 16 a3.73 mmGPin 111 D 12 D 1D 1 3G 2 S 1 /D 2S 2S 2546.00 mmPowerPAIR 6 x 3.7G LS6 GND5 GND4FEATURES• Halogen-free According to IEC 61249-2-21Definition• TrenchFET ® Power MOSFETs• 100 % R g Tested• Compliant to RoHS Directive 2002/95/ECAPPLICATIONS• Notebook System Power• POLV IN /D 1G HS1 V IN2 V INV IN 3N-Channel 1MOSFETV SWG HS /G 1V SW /S 1 /D 2G LS /G 2N-Channel 2MOSFETOrdering Information: SiZ700DT-T1-GE3 (Lead (Pb)-free and Halogen-free)GND/S 2ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise notedParameter Symbol Channel-1 Channel-2 UnitDrain-Source Voltage V DS 20 20Gate-Source Voltage V GS ± 16VT C = 25 °CT C = 70 °C 16 a 16 aContinuous Drain Current (T J = 150 °C)I D16 a 16 a AT A = 25 °C 13.1 b, c 17.3 b, cT A = 70 °C 10.5 b, c 13.9 b, cPulsed Drain Current I DM 60 60T C = 25 °C14.7Source Drain Current Diode CurrentI16 aT SA = 25 °C 1.96 b, c 2.3 b, cT C = 25 °C2.36 2.8T C = 70 °C 1.5 1.78Maximum Power DissipationPT DA = 25 °C 1.4 b, c 1.47 b, cT A = 70 °C 0.9 b, c 0.94 b, cOperating Junction and Storage Temperature Range T J , T stg - 55 to 150Soldering Recommendations (Peak Temperature) d, e 260THERMAL RESISTANCE RATINGSParameterSymbolChannel-1Channel-2Typ. Max. Typ. Max.Maximum Junction-to-Ambient b, f t ≤ 10 s R thJA 39 53 33 45°C/WMaximum Junction-to-Case (Drain) Steady State R thJC 5.7 7.1 3.7 4.6Notes:a. Package limited.b. Surface Mounted on 1" x 1" FR4 board.c. t = 10 s.d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (notplated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not requiredto ensure adequate bottom side solder interconnection.e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.f. Maximum under Steady State conditions is 90 °C/W for Channel-1 and 85 °C/W for Channel-2.W°CUnitDocument Number: 69090S09-0534-Rev. A, 06-Apr-09www.vishay.com1


New ProductSiZ700DTVishay SiliconixSPECIFICATIONS T J = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min. Typ. Max. UnitStaticV GS = 0 V, I D = 250 µA Ch-1 20Drain-Source Breakdown Voltage V DSV GS = 0 V, I D = 250 µA Ch-2 20I D = 250 µA Ch-1 21V DS Temperature Coefficient ΔV DS /T JI D = 250 µA Ch-2 21I D = 250 µA Ch-1 - 5.8V GS(th) Temperature Coefficient ΔV GS(th) /T JI D = 250 µA Ch-2 - 5.8V DS = V GS , I D = 250 µA Ch-1 0.8 2.2Gate Threshold Voltage V GS(th)V DS = V GS , I D = 250 µA Ch-2 0.8 2.2Gate-Body Leakage I GSS V DS = 0 V, V GS = ± 16 VNotes:a. Guaranteed by design, not subject to production testing.b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.Ch-1 ± 100Ch-2 ± 100Zero Gate Voltage Drain Current I DSSV DS = 20 V, V GS = 0 V Ch-2 1V DS = 20 V, V GS = 0 V, T J = 55 °C Ch-1 10V DS = 20 V, V GS = 0 V Ch-1 1V DS = 20 V, V GS = 0 V, T J = 55 °C Ch-2 10On-State Drain Current bI D(on)V DS ≥ 5 V, V GS = 10 V Ch-1 30V DS ≥ 5 V, V GS = 10 V Ch-2 30Drain-Source On-State Resistance b R DS(on)V GS = 10 V, I D = 20 A Ch-2 0.0047 0.0058V GS = 4.5 V, I D = 10 A Ch-1 0.0088 0.0108V GS = 10 V, I D = 15 A Ch-1 0.007 0.0086V GS = 4.5 V, I D = 15 A Ch-2 0.0054 0.0066V DS = 10 V, I D = 15 AForward Transconductance b Ch-1 60g fsV DS = 10 V, I D = 20 A Ch-2 100Dynamic aCh-1 1300Input Capacitance C iss Channel-1Ch-2 3860V DS = 10 V, V GS = 0 V, f = 1 MHzCh-1 290Output Capacitance C ossCh-2 760Channel-2V DS = 10 V, V GS = 0 V, f = 1 MHz Ch-1 132Reverse Transfer CapacitanceC rssCh-2 350Total Gate Charge Q gV DS = 10 V, V GS = 10 V, I D = 15 AV DS = 10 V, V GS = 10 V, I D = 20 ACh-1Ch-220553585Ch-1 9.5 15Channel-1Ch-2 27 45V DS = 10 V, V GS = 4.5 V, I D = 15 ACh-1 3.2Gate-Source Charge Q gsChannel-2Ch-2 9.2Gate-Drain ChargeQ gdV DS = 10 V, V GS = 4.5 V, I D = 20 A Ch-1 2.4Ch-2 7.1Gate Resistance R g f = 1 MHzCh-1 0.3 1.3 2.6Ch-2 0.2 1.0 2.0VmV/°CVnAµAAΩSpFnCΩwww.vishay.com2Document Number: 69090S09-0534-Rev. A, 06-Apr-09


New ProductSiZ700DTVishay SiliconixSPECIFICATIONS T J = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min. Typ. Max. UnitDynamic aCh-1 9 15Turn-On Delay Timet d(on)Channel-1Ch-2 13 20V DD = 10 V, R L = 10 ΩCh-1 8 15Rise Time t r I D ≅ 1.0 A, V GEN = 4.5 V, R g = 1 ΩCh-2 8 15Turn-Off Delay Timet d(off)Channel-2Ch-1 25 40V DD = 10 V, R L = 10 ΩCh-2 52 80I D ≅ 1.0 A, V GEN = 4.5 V, R g = 1 Ω Ch-1 8 15Fall Time t fCh-2 15 25nsCh-1 8 15Turn-On Delay Timet d(on)Channel-1Ch-2 12 20V DD = 10 V, R L = 10 ΩCh-1 9 15Rise Time t r I D ≅ 1.0 A, V GEN = 10 V, R g = 1 ΩCh-2 8 15Turn-Off Delay Timet d(off)Channel-2V DD = 10 V, R L = 10 ΩCh-1Ch-225474075Fall Time t fI D ≅ 1.0 A, V GEN = 10 V, R g = 1 Ω Ch-1 8 15Ch-2 10 15Drain-Source Body Diode CharacteristicsCh-1 14.7Continuous Source-Drain Diode Current I S T C = 25 °CCh-2 16Pulse Diode Forward Current a Ch-1 60I SMCh-2 60AI S = 2.0 A, V GS = 0 V Ch-1 0.8 1.2Body Diode Voltage V SDI S = 2.3 A, V GS = 0 V Ch-2 0.8 1.2VCh-1 25 50Body Diode Reverse Recovery Time t rrCh-2 40 80nsChannel-1Ch-1 13 25Body Diode Reverse Recovery Charge Q rr I F = 2.0 A, dI/dt = 100 A/µs, T J = 25 °CCh-2 31 60nCCh-1 12Reverse Recovery Fall Time t aChannel-2I F = 2.3 A, dI/dt = 100 A/µs, T J = 25 °C Ch-2 21Ch-1 13Reverse Recovery Rise Time t bCh-2 19nsNotes:a. Guaranteed by design, not subject to production testing.b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.Document Number: 69090S09-0534-Rev. A, 06-Apr-09www.vishay.com3


New ProductSiZ700DTVishay SiliconixCHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted601.2V GS = 10 V thru 4 V1.0I D - Drain Current (A)453015V GS =3VI D - Drain Current (A)0.80.60.4T C = 25 °C00.0 0.3 0.6 0.9 1.2 1.50.2T C = 125 °CT C = - 55 °C0.00.0 0.5 1.0 1.5 2.0 2.5 3.0V DS - Drain-to-Source Voltage (V)Output CharacteristicsV GS - Gate-to-Source Voltage (V)Transfer Characteristics0.0161800- On-Resistance (Ω)R DS(on)0.0120.0080.004V GS =4.5VV GS =10VC - Capacitance (pF)15001200900600C issC oss3000.0000 15 30 45 60I D - Drain Current (A)On-Resistance vs. Drain Current10C rss00 5 10 15 20V DS - Drain-to-Source Voltage (V)Capacitance1.8I D =15AI D =15A- Gate-to-Source Voltage (V)V GS8642V DS =5VV DS =15VV DS =10VR DS(on) - On-Resistance(Normalized)1.51.20.9V GS =10VV GS =4.5V00 5 10 15 20Q g - Total Gate Charge (nC)Gate Charge0.6- 50 - 25 0 25 50 75 100 125 150T J -Junction Temperature (°C)On-Resistance vs. Junction Temperaturewww.vishay.com4Document Number: 69090S09-0534-Rev. A, 06-Apr-09


New ProductSiZ700DTVishay SiliconixCHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted1000.030- Source Current (A)I S1010.10.01T J = 150 °CT J = 25 °CT J = - 50 °C- On-Resistance (Ω)R DS(on)0.0250.0200.0150.0100.005T J =125 °CT J = 25 °C0.0010.0 0.2 0.4 0.6 0.8 1.0 1.2V SD -Source-to-Drain Voltage (V)Source-Drain Diode Forward Voltage0.50.0000 1 2 3 4 5 6 7 8 9 10V GS - Gate-to-Source Voltage (V)On-Resistance vs. Gate-to-Source Voltage600.250Variance (V)V GS(th)- 0.1- 0.4- 0.7I D =5mAI D = 250 µAPower (W)40302010- 1.0-50 -25 0 25 50 75 100 125 150T J - Temperature (°C)Threshold Voltage00.0010.010.1Time (s)Single Pulse Power110100Limited by R DS(on) *10 µs10100 µs- Drain Current (A)11ms10 ms100 msI D0.1T A = 25 °CSingle PulseBVDSS Limited1 s, 10 s100 s, DC0.010.1 1 10 100V DS - Drain-to-Source Voltage (V)* V GS > minimum V GS at which R DS(on) is specifiedSafe Operating Area, Junction-to-AmbientDocument Number: 69090S09-0534-Rev. A, 06-Apr-09www.vishay.com5


New ProductSiZ700DTVishay SiliconixCHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted40I D - Drain Current (A)302010Package Limited00 25 50 75 100 125 150T C - Case Temperature (°C)Current Derating*251.76201.32Power (W)1510Power (W)0.8850.4400 25 50 75 100 125 1500.000 25 50 75 100 125 150T C - Case Temperature (°C)T A -Ambient Temperature (°C)Power, Junction-to-CasePower, Junction-to-Ambient* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.www.vishay.com6Document Number: 69090S09-0534-Rev. A, 06-Apr-09


New ProductSiZ700DTVishay SiliconixCHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted1Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.1Notes:0.1P0.05DMt 10.02t 2 t 11. Duty Cycle, D =t 22. Per Unit Base = R thJA = 90 °C/W3. T JM -T A =P DM Z (t) thJASingle Pulse4. Surface Mounted0.0110 -4 10 -3 10 -2 1 10 1001000Square Wave Pulse Duration (s)Normalized Thermal Transient Impedance, Junction-to-Ambient10 -11Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.10.050.10.02Single Pulse0.0110 -410 -3 10 -2 10 -11Square Wave Pulse Duration (s)Normalized Thermal Transient Impedance, Junction-to-CaseDocument Number: 69090S09-0534-Rev. A, 06-Apr-09www.vishay.com7


New ProductSiZ700DTVishay SiliconixCHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted601.2V GS = 10 V thru 3 V1.045I D - Drain Current (A)3015I D - Drain Current (A)0.80.60.4T C = 25 °C00.0 0.2 0.4 0.6 0.8 1.00.2T C = 125 °CT C = - 55 °C0.00.0 0.5 1.0 1.5 2.0 2.5 3.0V DS - Drain-to-Source Voltage (V)V GS - Gate-to-Source Voltage (V)Output CharacteristicsTransfer Characteristics0.0105000- On-Resistance (Ω)R DS(on)0.0080.0060.0040.002V GS =4.5VV GS =10VC - Capacitance (pF)4000300020001000C issC ossV DS - Drain-to-Source Voltage (V)0.0000 15 30 45 60I D - Drain Current (A)On-Resistance vs. Drain Current10C rss00 5 10 15 20Capacitance1.6- Gate-to-Source Voltage (V)V GS8642I D =20AV DS =5VV DS =15VV DS =10VR DS(on) - On-Resistance(Normalized)1.41.21.00.8I D =20AV GS =10VV GS =4.5V00 11 22 33 44 55Q g - Total Gate Charge (nC)Gate Charge0.6- 50 - 25 0 25 50 75 100 125 150T J -Junction Temperature (°C)On-Resistance vs. Junction Temperaturewww.vishay.com8Document Number: 69090S09-0534-Rev. A, 06-Apr-09


New ProductSiZ700DTVishay SiliconixCHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted1000.020- Source Current (A)I S1010.10.01T J = 150 °CT J = - 50 °CT J = 25 °C- On-Resistance (Ω)R DS(on)0.0150.0100.005T J = 125 °CT J =25 °C0.0010.0 0.2 0.4 0.6 0.8 1.0 1.2V SD -Source-to-Drain Voltage (V)Source-Drain Diode Forward Voltage0.50.0000 1 2 3 4 5 6 7 8 9 10V GS - Gate-to-Source Voltage (V)On-Resistance vs. Gate-to-Source1500.2120Variance (V)V GS(th)- 0.1- 0.4- 0.7I D = 250 µAI D =5mAPower (W)906030- 1.0- 50 - 25 0 25 50 75 100 125 150T J - Temperature (°C)Threshold Voltage00.0010.010.1Time (s)Single Pulse Power110100Limited by R DS(on) * 10 µs, 100 µs- Drain Current (A)I D1010.1T A = 25 °CSingle PulseBVDSS Limited1 ms10 ms100 ms1 s10 s100 s, DC0.010.1 1 10 100V DS - Drain-to-Source Voltage (V)* V GS > minimum V GS at which R DS(on) is specifiedSafe Operating Area, Junction-to-AmbientDocument Number: 69090S09-0534-Rev. A, 06-Apr-09www.vishay.com9


New ProductSiZ700DTVishay SiliconixCHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted60I D - Drain Current (A)453015Package Limited00 25 50 75 100 125 150T C - Case Temperature (°C)Current Derating*401.76321.32Power (W)2416Power (W)0.8880.4400 25 50 75 100 125 1500.000 25 50 75 100 125 150T C - Case Temperature (°C)T A -Ambient Temperature (°C)Power, Junction-to-CasePower, Junction-to-Ambient* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.www.vishay.com10Document Number: 69090S09-0534-Rev. A, 06-Apr-09


New ProductSiZ700DTVishay SiliconixCHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted1Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.10.20.10.050.023. T JM -T A =P DM Z (t) thJA0.01Single Pulse4. Surface Mounted10 -4 10 -3 10 -2 10 -11 10 1001000Square Wave Pulse Duration (s)Notes:Normalized Thermal Transient Impedance, Junction-to-AmbientP DMt 1t 2 t 11. Duty Cycle, D =t 22. Per Unit Base = R thJA = 85 °C/W1Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.10.20.10.050.02Single Pulse0.0110 -4 10 -3 10 -2 10 -11Square Wave Pulse Duration (s)Normalized Thermal Transient Impedance, Junction-to-CaseVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?69090.Document Number: 69090S09-0534-Rev. A, 06-Apr-09www.vishay.com11


Legal Disclaimer NoticeVishayDisclaimerAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1

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