- Page 1 and 2: BSIM3v3.2.2 MOSFET ModelUsers’ Ma
- Page 6 and 7: 3.3 Unified Linear Current Expressi
- Page 8 and 9: 9.2.4 Junction Capacitance Paramete
- Page 10 and 11: 6 BSIM3v3.2.2 Manual Copyright © 1
- Page 12: Organization of This Manual• Chap
- Page 15 and 16: Non-Uniform Doping and Small Channe
- Page 17 and 18: Non-Uniform Doping and Small Channe
- Page 19 and 20: Non-Uniform Doping and Small Channe
- Page 21 and 22: Non-Uniform Doping and Small Channe
- Page 23 and 24: Non-Uniform Doping and Small Channe
- Page 25 and 26: Non-Uniform Doping and Small Channe
- Page 27 and 28: Mobility Model(2.1.26)Vbseff = Vbc
- Page 29 and 30: Carrier Drift Velocity(mobMod=1) (2
- Page 31 and 32: Strong Inversion Drain Current (Lin
- Page 33 and 34: Strong Inversion Drain Current (Lin
- Page 35 and 36: Strong Inversion Current and Output
- Page 37 and 38: Strong Inversion Current and Output
- Page 39 and 40: Strong Inversion Current and Output
- Page 41 and 42: Strong Inversion Current and Output
- Page 43 and 44: Effective Channel Length and WidthC
- Page 45 and 46: Poly Gate Depletion Effect2.9 Poly
- Page 47 and 48: Poly Gate Depletion Effectwhere E o
- Page 49 and 50: Poly Gate Depletion Effect1.00Tox=8
- Page 51 and 52: Poly Gate Depletion EffectBSIM3v3.2
- Page 53 and 54:
CHAPTER 3: Unified I-V ModelThe dev
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Unified Channel Charge Density Expr
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Unified Channel Charge Density Expr
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Unified Linear Current Expression(m
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Unified Vdsat Expression3.3.2 Extri
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Unified Saturation Current Expressi
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Single Current Expression for All O
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A Note on Vbs3-16 BSIM3v3.2.2 Manua
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Geometry Definition for C-V Modelin
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Methodology for Intrinsic Capacitan
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Methodology for Intrinsic Capacitan
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Methodology for Intrinsic Capacitan
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Methodology for Intrinsic Capacitan
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Methodology for Intrinsic Capacitan
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Charge-Thickness Capacitance Modelc
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Charge-Thickness Capacitance Model(
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Charge-Thickness Capacitance Modelr
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Extrinsic Capacitancewhere t poly i
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Extrinsic CapacitanceCGS0 = 0 (if t
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Model Formulation5.3 Model Formulat
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Model FormulationQ defi cheq (t)C=1
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Model FormulationQdef() t = Q () t
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Model FormulationOther conductances
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Extraction Strategiesdevice perform
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Extraction Procedureeffects. Regard
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Extraction Procedure( m + 1) ( m) (
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Extraction ProcedureStep 4Extracted
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Extraction ProcedureC dscdFitting T
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Extraction ProcedureStep 17Extracte
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Notes on Parameter Extraction6.4 No
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Notes on Parameter Extractionni= 1.
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Notes on Parameter ExtractionBSIM3v
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Extraction Strategiesdevice perform
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Extraction Procedureeffects. Regard
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Extraction Procedure( m + 1) ( m) (
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Extraction ProcedureStep 4Extracted
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Extraction ProcedureC dscdFitting T
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Extraction ProcedureStep 17Extracte
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Notes on Parameter Extraction6.4 No
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Notes on Parameter Extractionni= 1.
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Notes on Parameter ExtractionBSIM3v
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Benchmark Test ResultsDevice Size B
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Benchmark Test ResultsIds (A)1.0E+0
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Benchmark Test ResultsIds (A)1.E-03
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Benchmark Test Resultsgm/Ids (mho/A
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Benchmark Test ResultsIds (A)9.E-03
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Flicker Noise8.1.2 Formulations1. F
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Channel Thermal NoiseSNoia⋅Vtmwi=
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Noise Model FlagBSIM3v3.2.2 Manual
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Diode IV ModelIf V bs < VjsmIbs= I
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Diode IV Model(9.9)Ibd= I⎛⎜⎝
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MOS Diode Capacitance ModelOtherwis
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MOS Diode Capacitance ModelIf P d >
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MOS Diode Capacitance Model9.2.3 Te
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MOS Diode Capacitance ModelSymbolsu
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DC ParametersSymbolsused inequation
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DC ParametersSymbolsused inequation
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C-V Model ParametersSymbolsused ine
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NQS ParametersSymbolsused inequatio
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Temperature ParametersSymbolsused i
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Flicker Noise Model ParametersSymbo
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Geometry Range ParametersA.9 Geomet
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Model Parameter NotesnI-4. If N ch
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Model Parameter NotesBSIM3v3.2.2 Ma
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I-V Modellt = ε siXdep / Cox ( 1 +
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I-V ModelB.1.4 Drain Saturation Vol
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I-V ModelVADIBLC=θ( Vgsteff+ 2vt)t
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I-V Model'Weff= Wdrawn−2dW'dW = d
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Capacitance Model EquationsB.2.2 Ov
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Capacitance Model EquationsB.2.2.3
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Capacitance Model Equations2 2Abulk
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Capacitance Model Equations4Qd =−
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Capacitance Model Equationswhere th
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Capacitance Model EquationsQsWactiv
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Capacitance Model Equationswhere th
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Capacitance Model EquationsB.2.3.1
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Capacitance Model EquationsΦ⎛⎜
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Capacitance Model EquationsQDWLC=
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[9] J.D. Kendall and A.R. Boothroyd
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[27] C. L. Huang and G. Sh. Gildenb
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C-6 BSIM3v3.2.2 Manual Copyright ©
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Model Control ParametersD.1 Model C
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DC ParametersSymbolsused inequation
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DC ParametersSymbolsused inequation
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AC and Capacitance ParametersSymbol
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dW and dL ParametersSymbolsused ine
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Flicker Noise Model ParametersSymbo
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Geometry Range ParametersD.9 Geomet