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BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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Table <strong>of</strong> ContentsCHAPTER 1: Introduction 1-11.1 General Inform<strong>at</strong>ion 1-11.1 Backward comp<strong>at</strong>ibility 1-21.2 Organiz<strong>at</strong>ion <strong>of</strong> This Manual 1-2CHAPTER 2: Physics-Based Deriv<strong>at</strong>ion <strong>of</strong> I-V <strong>Model</strong> 2-12.1 Non-Uniform Doping and Small Channel Effects on Threshold Voltage 2-12.1.1 Vertical Non-Uniform Doping Effect 2-32.1.2 L<strong>at</strong>eral Non-Uniform Doping Effect 2-52.1.3 Short Channel Effect 2-72.1.4 Narrow Channel Effect 2-122.2 Mobility <strong>Model</strong> 2-152.3 Carrier Drift Velocity 2-172.4 Bulk Charge Effect 2-182.5 Strong Inversion Drain Current (Linear Regime) 2-192.5.1 Intrinsic Case (Rds=0) 2-192.5.2 Extrinsic Case (Rds>0) 2-212.6 Strong Inversion Current and Output Resistance (S<strong>at</strong>ur<strong>at</strong>ion Regime) 2-222.6.1 Channel Length Modul<strong>at</strong>ion (CLM) 2-252.6.2 Drain-Induced Barrier Lowering (DIBL) 2-262.6.3 Current Expression without Substr<strong>at</strong>e Current InducedBody Effect 2-272.6.4 Current Expression with Substr<strong>at</strong>e Current InducedBody Effect 2-282.7 Subthreshold Drain Current 2-302.8 Effective Channel Length and Width 2-312.9 Poly G<strong>at</strong>e Depletion Effect 2-33CHAPTER 3: Unified I-V <strong>Model</strong> 3-13.1 Unified Channel Charge Density Expression 3-13.2 Unified Mobility Expression 3-6<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley 1

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