Hartmut S. Leipner

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2.1 Device effects of defects „Über Halbleiter sollte man nicht arbeiten, das ist eine Schweinerei, wer weiß ob es überhaupt Halbleiter gibt.“ [Pauli 1931] hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects 2
Transistor as invented by Bardeen and Brattain at Bell labs, 1947 The first transistor and IC hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects Integrated circuit of J. Kilby, 1958 3
Page 1: Hartmut S. Leipner: Structure of im
Page 5 and 6: hsl 2007 - Structure of imperfect m
Page 7 and 8: The field-effect transistor (FET) S
Page 9 and 10: μ n a Scattering at dislocations M
Page 11 and 12: Diode characteristics and dislocati
Page 13 and 14: Charged-dislocation model Model of
Page 15 and 16: Defects in GaAs field-effect transi
Page 17 and 18: Precipitate density (cm −3 ) (a)
Page 19 and 20: Active zone Radiation hsl 2007 - St
Page 21 and 22: Influence of dislocations on device
Page 23 and 24: Formation of dark-line defects EL E
Page 25 and 26: Dark-line defects and dislocation m
Page 27: Dislocation climb in the active lay
Page 30: Recombination enhanced dislocation
Page 33: References J. C. Kilby in: Handbook

Hartmut S. Leipner

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