FUJIFILM MS3897A CCD Image Sensor Imager ... - Chipworks

September 7, 2006
FUJIFILM
MS3897A
CCD Image Sensor
Imager Process Review
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FUJIFILM
MS3897A CCD Image Sensor
Imager Process Review
Table of Contents
1 Overview
1.1 List of Figures
1.2 List of Tables
1.3 Company Profile
1.4 Introduction
1.5 Device Summary
1.6 Process Summary
2 Device Overview
2.1 Package and Die Identification
2.2 Die Features
3 Process Analysis
3.1 General Device Structure
3.2 Dielectrics
3.3 Metallization
3.4 Vias and Contacts
3.5 Peripheral Transistors and Poly
3.6 Isolation
3.7 Wells and Substrate
4 Pixel Analysis
4.1 Pixel Overview
4.2 Pixel Plan View Analysis
4.3 Pixel Cross-Sectional Analysis (Diagonal)
4.4 Color Filters and Microlenses
5 Materials Analysis
5.1 TEM-EDS Analysis of Metals and Dielectrics
6 Critical Dimensions
6.1 Package and Die
6.2 Process
6.3 Pixel Array
7 References
Report Evaluation
Rev. 1.0 August 1, 2006 IPR-0607-803

FUJIFILM
MS3897A CCD Image Sensor
Overview 1-1
1 Overview
1.1 List of Figures
2 Device Overview
2.1.1 FUJIFILM FinePix F30 Camera
2.1.2 FUJIFILM FinePix F30 Product Identification
2.1.3 FUJIFILM FinePix F30 Main Board and Image Sensor Assembly
2.1.4 Image Sensor & Lens Assembly – Front
2.1.5 Image Sensor & Lens Assembly – Side
2.1.6 Image Sensor & Lens Assembly – Back
2.1.7 Image Sensor & Lens Assembly – Plan View X-Ray
2.1.8 Image Sensor & Lens Assembly – Side View X-Ray
2.1.9 CCD Image Sensor Assembly – Top
2.1.10 CCD Image Sensor Assembly – Bottom
2.1.11 JAPAN FUJIFILM MS3897A – Top
2.1.12 FUJIFILM MS3897A – Bottom
2.1.13 FUJIFILM MS3897A – Plan View X-Ray
2.1.14 MS3897A Die Photograph – Color Filters and Microlenses Removed
2.1.15 MS3897A Die Photograph – Analysis Sites
2.1.16 Die Markings
2.2.1 Die Corner A
2.2.2 Die Corner B
2.2.3 Die Corner C
2.2.4 Die Corner D
2.2.5 Minimum Pitch Bond Pads
2.2.6 Bond Pad Dimensions
2.2.7 Test Structure A
2.2.8 Test Structure B
2.2.9 Test Structure C
2.2.10 Test Structure D
2.2.11 Test Structure E
2.2.12 Test Structure F
2.2.13 Test Structure G
3 Process Analysis
3.1.1 MS3897A - Pixel Array General Structure
3.1.2 Die Edge
3.1.3 Edge of Bond Pad
3.2.1 Passivation – TEM
3.2.2 Passivation
3.2.3 IMD
3.2.4 PMD
3.3.1 Minimum Pitch Metal 2
3.3.2 Metal 2 Thickness
3.3.3 Minimum Pitch Metal 1 (Pixel Array)
Rev. 1.0 August 1, 2006 IPR-0607-803

FUJIFILM
MS3897A CCD Image Sensor
Overview 1-2
3.4.1 Minimum Pitch Vias
3.4.2 Minimum Pitch Contacts to Poly
3.4.3 Minimum Pitch Contacts to Diffusion
3.4.4 Minimum Width Contact
3.5.1 Minimum Poly Dimensions – Pixel Array
3.5.2 Dielectrics Beneath Poly 2 – TEM, Pixel Array
3.5.3 Detail of Dielectrics Beneath Poly 2 – TEM, Pixel Array
3.5.4 Interpoly Dielectric and Buffer Oxide
3.5.5 Minimum Pitch Poly
3.5.6 Amplifier Schematic
3.5.7 Output Amplifier Overview
3.5.8 T1 and Reset Transistors – Plan View
3.5.9 T1 Transistor Gate Length – Cross Section View
3.5.10 Reset Transistor Gate Length – Cross Section View
3.5.11 T2 Transistor – Plan View
3.5.12 T3 Transistor – Plan View
3.5.13 T4 Transistor – Plan View
3.5.14 T5 Transistor – Plan View
3.5.15 Detail of T5 Transistor – Plan View
3.5.16 T6 Transistor – Plan View
3.5.17 T7 and T8 Transistors – Plan View
3.5.18 Detail of T8 Transistor
3.6.1 Edge of FOX
3.6.2 Minimum Width LOCOS
3.7.1 SRP Profile of N-epi
3.7.2 SRP Profile Peripheral P-well
3.7.3 SRP Profile of Peripheral P-well – Detail
3.7.4 SRP Profile of Pixel Array Well Structure
4 Pixel Analysis
4.2.1 Silicon Nitride Microlens
4.2.2 Tungsten Light Shield
4.2.3 Array Corner – Dark and Active Pixels
4.2.4 Detail of Pixel Aperture
4.2.5 Pixel at Poly
4.2.6 Bevel Sample SCM of CCD Array
4.2.7 Substrate Sample SCM of CCD Array
4.3.1 Pixel at Poly – Planes of Cross-Sectioning
4.3.2 CCD Pixel Overview – Diagonal Cross Section
4.3.3 Pixel Aperture – Diagonal Cross Section (TEM)
4.3.4 Pixel Aperture – Diagonal Cross Section (SEM)
4.3.5 Pixel N-Photocathode and P-pinning Layer – SCM
4.3.6 Poly 1 Control Line – Transfer Site
4.3.7 Poly 1 Control Line – Transfer Site
Rev. 1.0 August 1, 2006 IPR-0607-803

FUJIFILM
MS3897A CCD Image Sensor
Overview 1-3
4.4.1 Edge of Array – Color Filters and Microlenses
4.4.2 Microlens Radius of Curvature
4.4.3 Organic Microlens Profile – Perspective View AFM
4.4.4 Organic Microlens Profile – Plan View AFM
4.4.5 Organic Microlens Height – AFM Line Scan
4.4.6 Red and Green Color Filters
4.4.7 Blue and Green Color Filters
5 Materials Analysis
5.1.1 TEM-EDS Spectrum of Metal 1 Body
5.1.2 TEM-EDS Spectrum of Metal 1 Barrier
5.1.3 TEM-EDS Spectrum of Passivation 2 and Passivation 3
5.1.4 TEM-EDS Spectrum of Passivation 1
5.1.5 TEM-EDS Spectrum of IMD 2
5.1.6 TEM-EDS Spectrum of IMD 1
Rev. 1.0 August 1, 2006 IPR-0607-803

FUJIFILM
MS3897A CCD Image Sensor
Overview 1-4
1.2 List of Tables
1 Overview
1.5.1 MS3897A Device Summary
1.6.1 MS3897A CIS Process Summary
2 Device Overview
2.1.1 Package and Die Dimensions
2.2.1 Bond Pad Dimensions
3 Process Analysis
3.2.1 Dielectric Thicknesses
3.3.1 Metallization Vertical Dimensions
3.3.2 Minimum Metallization Horizontal Dimensions
3.4.1 Via and Contact Dimensions
3.5.1 Peripheral Transistor and Polycide Dimensions
3.5.2 Output Amplifier Transistor Gate Dimensions
3.6.1 LOCOS Observed Critical Dimensions
4 Pixel Analysis
4.1.1 Pixel Array Horizontal Dimensions
4.1.2 Pixel Array Vertical Dimensions
6 Critical Dimensions
6.1.1 Package and Die Dimensions
6.1.2 Bond Pad Dimensions
6.2.1 Dielectric Thicknesses
6.2.2 Metallization Vertical Dimensions
6.2.3 Minimum Metallization Horizontal Dimensions
6.2.4 Via and Contact Dimensions
6.2.5 Peripheral Transistor and Polycide Dimensions
6.2.6 Output Amplifier Transistor Gate Dimensions
6.2.7 LOCOS Observed Critical Dimensions
6.3.1 Pixel Array Horizontal Dimensions
6.3.2 Pixel Array Vertical Dimensions
Rev. 1.0 August 1, 2006 IPR-0607-803

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