Conference Program

1 

International Exhibition and Conference 

for Power Electronics, Intelligent Motion, 

Renewable Energy and Energy Management 

Nuremberg, 16 – 18 May 2017 

pcim-europe.com 

Conference Program 

7 Seminars 

on 14 May 2017 

11 Tutorials 

on 15 May 2017 

Conference from 

16 –18 May 2017

3 

Table of Content 

Welcome Address 

Welcome Address 3 

Board 4 

Conference Program at a Glance 6 

Seminars 8 

Tutorials 12 

Awards 19 

Keynotes 20 

Tuesday Oral Sessions 22 

Tuesday Poster Dialogue Sessions 26 

Wednesday Oral Sessions 30 

Wednesday Poster Dialogue Sessions 34 

Industry Forum 37 

Thursday Oral Sessions 38 

List of Exhibitors 42 

Industry Forum 44 

Room Plan 45 

Registration Information 46 

General Information 47 

PCIM Worldwide 48 

Dear PCIM Europe participants, 

I am very pleased to welcome all of you to the PCIM Europe Conference 2017 in Nuremberg. 

Power electronics is one of the most successful industries in Europe with a variety of advanced 

research fields, very competitive and successful industrial companies, and many leading academic 

laboratories in different countries. The PCIM Europe serves as a technical and scientific platform 

for decision makers, engineers and researchers engaged to power electronics and its fields of 

applications. 

Precise first hand transfer of knowledge 

The technical program for this year’s conference comprises a variety of topics. New materials for 

semiconductor devices including wide bandgap power electronics, reliability issues for power 

modules and advanced systems as well as design regulations to manage ultrafast switching devices 

in the circuit, form the backbone of the PCIM Europe Conference 2017. The other subjects 

range from advanced technologies for power semiconductor devices and passive components up 

to control and drive strategies for high efficient high density power converters, drive systems for 

e-vehicles and renewable energy technologies. As a conference participant you will gain complete 

access to specialized knowledge within the power electronics industry as well as an overview of 

the market as well. 

Taking a look ahead 

The keynote papers are a further highlight of the PCIM Europe 2017 Conference. They cover the 

development of trends for e-vehicles including charging infrastructure, the impact of power electronics 

for the future SMART factory (Industry 4.0) as well as the evolution of power supply topologies 

as a result of new semiconductor devices and enabling technologies. Besides the keynotes, 

the special sessions deal with advanced passive components and capacitors in addition to smart 

grid and communication. 

Special attention has been paid on the research carried out by young engineers and the presentation 

of the Young Engineer and Best Paper Awards at the opening ceremony of the PCIM Europe 

Conference 2017 ranks amongst the conference highlights. 

With this outstanding conference agenda and high-quality discussion platform, I am convinced 

that the PCIM Europe Conference will serve as an international knowledge platform. You will get 

an overview of key technology developments concerning trends in power electronics and be inspired 

to pursue new business opportunities. 

I wish you an enjoyable and successful conference, packed with new ideas for your future business. 

Leo Lorenz, 

General Conference Director, Germany

4 

5 

Board 

Board of Directors 

Advisory Board 

Bodo Arlt, A Media, Germany 

Klaus Marahrens, SEW-Eurodrive, Germany 

Francisco Javier Azcondo, University of Cantabria, Spain 

Elison Matioli, POWERlab, EPFL, Switzerland 

Mark M. Bakran, University of Bayreuth, Germany 

Mike Meinhardt, SMA Solar Technology, Germany 

Pavol Bauer, Delft University of Technology, Netherlands 

Thomas Neyer, Fairchild Semiconductor, Germany 

General Conference Director 

Leo Lorenz 

ECPE, Germany 

Jean-Paul Beaudet 

Schneider Electric, France 

Philippe Ladoux 

University of Toulouse, France 

Werner Berns, Texas Instruments, Germany 

Frede Blaabjerg, Aalborg University, Denmark 

Serge Bontemps, Microsemi PMP Europe, France 

Yasuyuki Nishida, Chiba Institute of Technology, Japan 

Geraldo Nojima, Eaton Corporation, USA 

Yasuhiro Okuma, Fuji Electric, Japan 

Eric Carroll, EIC Consultancy, France 

Masahito Otsuki, Fuji Electric, Japan 

Bruce Carsten, Bruce Carsten Associates, USA 

Nejila Parspour, University of Stuttgart, Germany 

Daniel Chatroux, CEA-LITEN, France 

Robert J. Pasterczyk, Schneider Electric, France 

Silvio Colombi, General Electric, Switzerland 

Volker Pickert, University of Newcastle, United Kingdom 

Eric Favre 

IMI Precision Engineering, 

Switzerland 

Jose Mario Pacas 

University of Siegen, Germany 

Hilmar Darrelmann, Darrelmann + Partner Ingenieure, Germany 

Enrique J. Dede, University of Valencia, Spain 

Bernhard Piepenbreier, University of Erlangen, Germany 

Munaf Rahimo, ABB Switzerland, Switzerland 

Drazen Dujic, Power Electronics Laboratory, EPFL, Switzerland 

Kaushik (Raja) Rajashekara, University of Houston, USA 

Hans-Günter Eckel, University of Rostock, Germany 

Chris Rexer, ON Semiconductor, USA 

Hans Ertl, Vienna University of Technology, Austria 

Katsuaki Saito, Hitachi Europe, Great Britain 

J. A. Ferreira, Delft University of Technology, Netherlands 

Franck Sarrus, Mersen France, France 

Petar J. Grbovic, Huawei Technologies, Germany 

Andrew Sawle, Infineon Technologies, Great Britain 

Johann Walter Kolar 

ETH Zürich, Switzerland 

Uwe Scheuermann 

Semikron Elektronik, Germany 

Steffan Hansen, Siemens Wind Power, Denmark 

Klaus F. Hoffmann, Helmut-Schmidt-University, Germany 

Achim Scharf, Techmedia International, Germany 

Hubert Schierling, Siemens, Germany 

Edward Hopper, MACCON, Germany 

Manfred Schlenk, Infineon Technologies, Germany 

Consultatory Board 

Ionel Dan Jitaru, Rompower, USA 

Nando Kaminski, University of Bremen, Germany 

Manfred Schrödl, Vienna University of Technology, Austria 

Walter Schumacher, Braunschweig University of Technology, Germany 

Peter Kanschat, Infineon Technologies, Germany 

Toshihisa Shimizu, Tokyo Metropolitan University, Japan 

Ulrich Kirchenberger, STMicroelectronics, Germany 

Christopher A. Soule, Thermshield, USA 

Philip C. Kjaer, Vestas Wind Systems, Denmark 

Elmar Stachorra, KoCoS Power Grid Services, Germany 

Christopher Kocon, Texas Instruments, USA 

Peter Steimer, ABB Switzerland, Switzerland 

Friedrich-Wilhelm Fuchs 

Christian-Albrechts-University of Kiel, Germany 

Josef Lutz 

Chemnitz University of Technology, Germany 

Jacques Laeuffer, Dtalents, France 

Stéphane Lefebvre, SATIE, France 

Bernhard Strzalkowski, Analog Devices, Germany 

Wolfram Teppan, LEM Intellectual Property SA, Switzerland 

Romeo Letor, STMicroelectronics, Italy 

Giuseppe Tomasso, University of Cassino and South Lazio, Italy 

Andreas Lindemann, Otto-von-Guericke-University Magdeburg, Germany 

Joël Turchi, On Semiconductor, France 

Honorary Board 

Helmut Knöll, University for Applied Sciences Würzburg-Schweinfurt, Germany 

Jean-Marie Peter, France 

Gerhard Pfaff, University of Erlangen, Germany 

Alfred Rufer, EPFL, Switzerland 

Stefan Linder, Alpiq, Switzerland 

Marco Liserre, Christian-Albrechts-University of Kiel, Germany 

Martin März, FhG – IISB, Germany 

Gourab Majumdar, Mitsubishi Electric, Japan 

Yoshiyuki Uchida, Japan Fine Ceramics, Japan 

Peter Wallmeier, Delta Energy Systems, Germany 

Dehong Xu, Zhejiang University, China 

Peter Zacharias, University of Kassel, Germany

6 

7 

Conference Program at a Glance 

Sunday, 14 May 2017 

14:00 – 17:30 Hotel Arvena Park Görlitzer Str. 51, D-90473 Nuremberg 

Seminars 

Thursday, 18 May 2017 

08:45 Brüssel 

KEYNOTE »Evolution in Topologies as a Result of New Devices and Enabling Technologies« 

09:30 Coffee Break 

Monday, 15 May 2017 

09:00 – 17:00 Hotel Arvena Park Görlitzer Str. 51, D-90473 Nuremberg 

Tutorials 

10:00 Brüssel 1 

Advanced Wide 

Bandgap - GaN 

12:00 Lunch Break 

München 1 

Power Electronics in 

Automotive 

München 2 

Control and Drive Strategies 

in Power Converters 

Mailand 

SPECIAL SESSION 

»Capacitors« 

Tuesday, 16 May 2017 


Conference Opening and Award Ceremony 


SiC Modules Diodes 

München 1 

Power Converters 

with Wide Bandgap 

Devices III 

München 2 

System Reliability 

Mailand 

Energy Storage and 

Power Quality Solutions 


KEYNOTE »Long Distance Charging Solutions for BEVs: from now to 2030« 

As of March 2017/subject to change without notice. 



HV-SiC-MOSFET 

Brüssel 2 

Power Converters with 

Wide Bandgap Devices I 

München 1 

Materials 

München 2 

Sensorless Drives 

Mailand 

Modular Multilevel Converter 

for HV Applications 



SiC MOSFET 

Brüssel 2 

Power Converter 

Design 

München 1 

Current Sensors 

München 2 

New and Renewable 

Energy Systems 

Mailand 


»Smart Grid & 

Communication« 

Benefit from early-bird 

rates until 10 April 2017 

and save up to 100 Euro! 

pcim-europe.com/registration 

15:30 Foyer Entrance NCC Mitte 

Poster/Dialogue Session 

17:15 Exhibition Party 

Wednesday, 17 May 2017 


KEYNOTE »The Smart Future of Power Electronics and its Applications« 




with Wide Bandgap 

Devices II 

Brüssel 2 

IGBT 

München 1 

Module Design 

München 2 

Control Techniques 

in Intelligent Motion 

Systems 

Mailand 


»Passive Components« 



SiC-Systems 

Brüssel 2 

Power Electronics 

Optimization 

München 1 

Cooling Thermal 

Management 

München 2 

Metering and Diagnostics 

and Standards 

Mailand 

Passive Components 

and New Materials 

15:30 Foyer Entrance NCC Mitte 

Poster/Dialogue Session

8 

9 

Seminars Sunday, 14 May 2017, 14:00 – 17:30 

Venue: Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg 

Seminar 1 

Basics of Electromagnetic Compatibility (EMC) of Power Systems 


About the instructor 

Jacques Laeuffer has a 35 years’ experience of R&D in Power 

Electronics, inside international companies, with powers from 

10 W up to 10 MW, including HF resonant converters and high 

voltage transformers, electric machines and inverters for hybrid 

cars. He is inventor of 27 granted patents and author of over 80 

technical papers. Affiliated professor at Ensta-ParisTech, he is 

also a teacher at CentraleSupelec, France, and for inter and 

intra companies international trainings, about power electronics, 

EMC, electric machines, digital control, mechatronics, cars 

powertrains, and history of physics. 

Contents 

Fast semiconductors commutations are required for efficiency of high frequency 

(HF) power converters and drives, and their wide bandwidth control 

electronics. These sudden front edges generate perturbations in control circuits, 

especially analog ones, and on public utility power networks. 

This seminar shows step by step how perturbations propagate, as Differential 

Mode (DM) and Common Mode (CM), how to reduce noisy oscillations from 

the beginning, how to design and implement robust control electronics, how to 

calculate and optimize DM and CM filters for EMC standards compliance, how 

to avoid expensive shielding and improve reliability. 

Number of practical designs are analytically calculated, showing orders of 

magnitudes for a wide range of powers and frequencies. 

Differential Mode (DM) management and filtering 

Within control: resistive, inductive and capacitive coupling. Reduction by 

ground planes. 

Wiring strategies evolution form “star connection” to “net connection”. 

Switching power supply operating sequence as EMI source. Disturbances 

from transistors and diodes. Spectrum analysis. Line diodes 

recovery. Line inductance effect. 

Disturbances calculations. Measurement according to Standards by 

L.I.S.N. and Spectrum Analyzer. 

DM filter calculation, including damping. Design of L, C and R components. 

Some MHz perturbations evaluations. Reduction means. 

Common Mode (CM) management and filtering 

Within control: implementation and interconnection between PCBs and 

between cabinets. CM parasitic coupling calculation and reduction. 

Signal transmission by lines and by optics. 

Switching power supply operating sequence as EMI source. CM capacitances 

of heatsinks, transformers, screens, electric machines stators. 

Disturbances calculations. Measurement according to Standards. CM 

filter calculation. Leakage current constraint. Coupled inductance design. 

EMC Commutation Control of Power Semiconductors 

Tuning commutation times as a trade-off between switching losses and EMC. 

Calculation of di/dt and dv/dt front edges of semiconductors according to 

gate drive. 

Gate drive circuit designs for MOS and IGBTs. 

Who should attend? 

This seminar is targeted towards engineers and project managers, who design, specify, simulate, 

tune, integrate high frequency power supplies, converters, EMC filters, electric machines, 

and intelligent motion including inverter + power cable + electric machine, for high 

efficiency conversion, low global cost and high reliability. 

Seminar 2 

Multi-Kilowatt Flyback Converters; Advantages and Practical 

Design Considerations 



Bruce Carsten has 46 years of experience in the design and development 

of switchmode power converters from 100 mW to 10 

kW and 20 kHz to 1 MHz. Although his specialities have become 

HF magnetics and design for low EMI, his background covers all 

aspects of switchmode design, from new control methodologies 

to new topologies, including the active clamp forward converter. 

He has authored or co-authored 59 papers, and has 17 patents. 

Contents 

Flyback converters are commonly considered to be of low performance, suitable 

only for low power levels where circuit simplicity is important. This is not 

the case; I have shown that flyback converters are fundamentally similar to 

forward converters in nearly all aspects, but are actually superior in the utilization 

of the power magnetics. 

All efficient regulating power converters require an inductor, and all isolated 

converters also require a transformer. In the flyback converter these are 

uniquely integrated into a single device, which is smaller, lighter and more efficient 

than separate transformers and indictors, even compared to other integrated 

magnetic structures. 

As a buck-boost topology, flyback converters excel at working over a wide 

range of input and/or output voltages. They can function well as isolated ac 

input power factor corrected (PFC) converters, and as such are finding increasing 

use in LED luminaires up to a few 100 watts. This concept has been extended 

to a 4.5 kW, 50 kHz PFC converter, with 95% efficiency over a wide 

load range (despite a dissipative voltage clamp), utilizing SiC FETs and 

Schottky rectifiers. 

Flyback converters do have some potential disadvantages, including: pulsating 

input and output currents; a RHP zero in the control function; and the need to 

deal with the leakage inductance energy stored in the transformer. As with 

other basic single stage PFC converters, there is also a twice line frequency 

ripple on the output voltage, although in 3 phase applications this issue is 

easily overcome. 

Much of the seminar will deal with solutions to problems in utilizing an existing 

PFC flyback controller at power levels well beyond the intended application. 

The pulsating input and output currents are best dealt with interleaved 

converters, which require that the controllers be synchronized to a master poly-phase 

clock, and also must be able to share current. All problems encountered 

and their solutions will be presented, including: noise sensitivity of IC 

controllers; the slow control loop required of PFC controllers which allows the 

output voltage to overshoot dramatically on startup and load removal, and inconvenient 

„features“ built into the controllers which need to be overcome. 


This seminar is intended for design engineers who have a potential interest in extending the 

application of the simple flyback converter to high power levels, but who also want to avoid 

many of the pitfalls that can occur. 

Seminar 3 

What a Design Engineer Should Know About Current-Mode Control 

Richard Redl, Redl Consulting, Switzerland 


Dr. Redl is a power-electronics consultant in Switzerland, specializing 

in power supplies, UPSs, inverters, electronic ballasts, battery 

chargers and battery management systems, and integrated circuits 

for power management. He holds twenty-two patents, has written 

over hundred technical papers and three book chapters, and co-authored 

a book on the dynamic analysis of power converters. 

Contents 

Current-mode control was introduced in the 1960s and over the years it has become 

one of the most popular control techniques for dc-dc converters. The reason 

for this is that it has many advantages, including simplified compensation of the 

feedback loop, increased stability and robustness, inherent pulse-by-pulse current 

limiting, reduced sensitivity to variations in the input voltage and to circuit parameter 

values, and easy load-current feedforward for superior load transient response. 

It has several flavors to choose from and unlike some other two-loop 

control techniques (V2, R3) it can be used with all types of square-wave converters. 

The concept can also be extended to resonant converters, e.g., the LLC converter. 

This seminar presents an overview and critical comparison of the various current-mode 

control techniques, discusses the latest developments in modeling 

and stability analysis, and provides design guidelines. 

The following topics will be covered: 

1. Introduction 

1.1. Basic concept of current-mode control 

1.2. Advantages and disadvantages 

1.3. History 

2. Classification and characteristics 

2.1. Constant-frequency control (peak, valley, PWM conductance) 

2.1.1. Stability of the current loop 

2.2. Variable-frequency control (constant-off-time, constant-on-time, 

hysteretic) 

2.3. Derivatives and improvements (average-current control, charge control, 

inductor-voltage-integral control, emulated current control, line-voltage 

and load-current feedforward combined with current-mode control, 

capacitor-current control, combining current-mode control with ripplebased 

voltage-mode control) 

3. Large-signal and small-signal modeling, feedback-loop design, highfrequency 

stability analysis 

3.1. Simplified large-signal model 

3.2. The Ridley model (large-signal, small-signal) 

3.2.1. Z-transform based analysis of the current loop 

3.3. Describing function analysis and small-signal model by Li and Lee 

3.4. Feedback-loop design considerations 

3.5. Harmonic balance based fast-scale stability analysis of the feedbackregulated 

current-mode-controlled converters by Fang and Redl (frequency 

shift of the hysteretic converter, period-doubling instability of 

the constant-on-time, constant-off-time or constant-frequency converters) 

4. Practical issues 

4.1. Current-sensing solutions (switch current, diode/synchronous rectifier 

current, inductor current, capacitor current) 

4.2. Using the current loop for current limiting 

4.3. Feedback-loop design for droop 

4.4. Current-mode control of multi-phase converters 


The target audience of this seminar is power-supply design engineers, power-management IC 

designers, system designers, project managers, engineering students, and all other professionals 

interested in the theory and application of current-mode control of dc-dc converters. 

Seminar 4 

Modern Magnetic Technologies for High Efficiency and High 

Power Density 



Ionel “Dan“ Jitaru is the founder of Rompower Inc. an internationally 

recognized engineering firm in the field of power conversion, 

later Ascom Rompower Inc. and Delta Energy Systems 

(Arizona) Inc. Presently he is the president of Rompower Energy 

Systems Inc. He has published 52 papers wherein several of 

them have received the best paper award, and held 45 professional 

seminars at different International Conferences in the 

power conversion field. Mr. Jitaru has pioneered several trends 

in power conversion technologies such as “Soft Switching 

PWM”, “Full integrated multilayer PCB Magnetic”, “Synchronized 

rectification” and recently “True Soft Switching technologies” 

wherein the primary switchers turn on at zero voltage and 

the secondary switchers turn off at zero current. Some of these 

technologies have been covered by 63 intellectual properties 

wherein 37 are granted patents. 

Contents 

This seminar will present a comprehensive overview of the modern magnetic 

technologies presently used in power conversion and new trends in magnetic 

technologies developed to address the new demands. In the quest for higher 

power densities and higher efficiency, magnetic technologies were forced to 

adapt. New magnetic structures have been developed as a result. In spite of 

the significant progress in the semiconductor industry, the magnetics technology 

lags behind. Presently, in most of the advanced implementations, the 

power dissipation in magnetics is the largest percentage of the total power 

dissipation. The seminar will start by presenting several key characteristics of 

magnetics such as leakage inductance, stray inductance, inter-winding and intra-winding 

capacitances and their impact in power conversion performance. 

Methods of measuring and controlling these parasitic elements are also presented. 

The seminar will present the most suitable magnetic technology for 

different topologies designed to enhance the efficiency and power density. A 

chapter is dedicated to quasi-integrated and integrated magnetics. Methods of 

calculating and simulating such structures will be presented. A particular implementation 

wherein two independent transformers are placed on the same 

magnetic core without mutual interference, this will highlight the presentation, 

by offering a better understanding of the flux distribution in the magnetic 

core. Magnetic technologies for specific applications such as very low voltage 

and high current will be presented together with experimental results. The 

seminar will also show some present and future trends in magnetics for higher 

frequency operation. The presentation will be highlighted with design guidance, 

design example and experimental results. 


This seminar is designed for power conversion engineers, magnetic engineers, and technical 

managers who are involved in state-of-art power conversion. The attendees will get familiar 

with the latest advancement in magnetics in power conversion aimed to increase the 

performance and reduce the total cost.

10 

11 

Seminars Sunday, 14 May 2017, 14:00 – 17:30 


Seminar 5 

Power Electronics and Control for Battery Systems 

Regine Mallwitz, Technische Universität Braunschweig, Germany 

Mike Meinhardt, SMA Solar Technology, Germany 

About the instructors 

Prof. Regine Mallwitz has been held the professorship for Power 

Electronics at the Technische Universität Braunschweig for 2 

years. Before, she worked in R&D positions in different areas of 

power electronics for instance in the semiconductor module development 

at Infineon Technology AG, Germany, and PV inverter 

development at SMA Solar Technology AG, Germany. 

Prof. Mike Meinhardt is head of Innovation Management at 

SMA Solar Technology AG, Germany and has over 20 years of 

experience in photovoltaic and off-grid inverters in industrial 

R&D as well as research institutes and universities. He is honorary 

professor at the University of Kassel. 

Contents 

Renewable energies will play a major role in future electric energy supply. 

With the growing portion of renewable energies in relation to conventional 

energy sources in public grids the need for energy storage and grid connected 

battery systems is also growing. Otherwise smaller off-grid battery systems 

are known for several years. For grid-tied battery energy systems power electronics 

are needed to convert the DC power of the battery to AC power and 

vice versa. These systems coupled to the public grid and have to fulfill the specific 

grid codes. However, off-grid battery inverters deliver stable, sinusoidal 

AC Voltage and at the same time high AC currents to trip fuses. In this way, 

each type of system is characterized by specific requirements which affects 

the power electronics but also the control strategies. These power electronics 

aspects and control strategies are in the main focus of this seminar. Requirement 

and functionality are derived and solutions are presented as well as one 

example of a commercially available battery inverter. The seminar discusses 

also the most important battery types and gives a systematic overview about 

the different types of battery systems on the market today and in the future. 


This seminar is interesting to beginners and advanced participants from university and industry 

(incl. utilities) as it includes a perfect mixture of different aspects of power electronics 

and control strategies. The seminar comprises theoretical parts on power electronic 

topologies and control structures as well as practical aspects on design consideration of offthe-shelf 

inverters for battery applications. 

Seminar 6 

Power Supply Design Review: Achieving 98% Efficient Power 

Supplies Using GaN FETs 

Eric Persson, Infineon Technologies, USA 


Eric Persson’s career spans 20 years of hands-on power converter 

and inverter design, followed by 17 years of applications engineering 

in the semiconductor industry at International Rectifier, 

now Infineon Technologies. He is presently heading GaN Applications 

worldwide for Infineon. Eric has presented more than 80 tutorials 

and papers at various international conferences. He is a 

regular lecturer, presenting short courses and tutorials at UW 

Madison, the University of Minnesota (his Alma Mater) and Purdue 

University. He is Chairman of the Power Source Manufacturers 

Association (PSMA) board of directors, and Program Chair for 

APEC 2017. Mr. Persson holds 13 patents, and is a recipient of the 

IEEE Third Millennium Medal. 

Contents 

Achieving an overall peak efficiency of 98% in a server/telecom power supply 

has been a challenge for many years. To do so while also meeting density and 

cost goals is now a reality, by taking advantage of the performance benefits of 

GaN transistors. This seminar takes you through a complete power supply design 

in the 1-3 kW range. We will compare conventional high-efficiency silicon 

designs to even higher efficiency designs based on GaN HEMTs. The comparisons 

are based on actual reference designs using the latest devices. 

The seminar is in two parts, first for the PFC front-end, and the second for the 

LLC back-end DC-DC converter. 

The PFC section covers: 

Totem-pole full-bridge topology 

The tradeoffs of Continuous versus Critical Conduction Mode 

Balancing switching versus conduction loss 

Control strategy 

Magnetic considerations 

Gate drive 

EMI filter design 

Thermal management 

Handling line cycle drops and surge 

Performance example 

LLC DC-DC converter stage: 

Control strategy, LLC vs LCLC 

Optimizing magnetizing current, deadtime versus GaN Qoss 

Magnetic design options 

Primary-side gate drive 

Synchronous Rectifier: Control, FET options and gate drive 

Thermal management 

Output filter design 

Managing fault conditions 

Performance example 

Seminar 7 

Design of Magnetic Components for High Power Electronics 

Converters 

Tomás Pagá, Enerdrive, Switzerland 


Tomás Pagá, born in Venezuela in 1969, received his B.S and 

M.S. degrees from Simón Bolívar University in Caracas, Venezuela 

in 1994 and 1999 respectively. He was university professor 

and researcher until 2000. From 2001, he has been Power Electronics 

Converter Designer for industry, railway and renewable 

energy applications. Currently he works as consultant in High 

Power Electronics for Enerdrive GmbH in Zurich, for manufacturers 

of multi-megawatt wind energy and drives power converters. 

His research interests include high power electronics converters 

design, magnetic components modeling and design, modeling 

of power electronics components, thermal management and high 

frequency converters. 

Contents 

Filter chokes and transformers for high power converters, ranging from hundreds 

to thousands of kW, are commonly one of the most costly and difficult 

components to design. Desired electrical performance and tight restrictions in 

weight, volume and cooling represent a challenging compromise for the designer. 

In this seminar he addresses topics from how to specify the components 

for outsourcing to how to get deep inside the detailed design itself. 

References, test results and failure examples from real cases are presented. 

The seminar will be based on a design case, where the main design problems 

for each step will be addressed. Analytic, Finite Element Method and Circuit 

Simulation tools will be used during the design. Losses calculation and measuring 

are treated in detail. Losses produced by the switching high frequency 

components are often miscalculated resulting in poor thermal performance. 

High frequency losses curves of laminated magnetic steel are commonly not 

available from the suppliers, so the designer faces with the need of high frequency 

losses measuring methods. Losses measurement error sources, like 

low power factor and angle errors, are explained in detail and methods to 

overcome those issues will be discussed. Additional sources of losses due to 

winding resistance, skin/proximity effect and fringe flux on the air-gaps will 

also be addressed. Finally, cooling methods and mechanical design considerations 

for robustness and acoustic noise reduction are discussed. 

Fields of application: 

Grid Connected Converters 

- Solar Inverters 

- Wind Generators 

- UPS systems 

Electrical Drives 

- Traction Drives 

- Wind Generators 

Isolated Grid Supplies 

- Railway Auxiliary Converters 

- UPS systems 

Program: 

Field of application. 

Magnetic design basic concepts. 

Design case. 

Analytical calculation. 

Finite Element modeling. 

Interaction with the PE converter. 

High frequency losses estimation. 

Additional losses. 

Overall system performance, summary and conclusions. 


This seminar is intended for designers and engineers involved in high efficiency power supply 

design. It assumes a working knowledge of power electronic fundamentals, and a familiarity 

with power supply topologies and design principles. 

Simulation and measurement methods for validation. 

Cooling and mechanical design topics. 


Engineers and project managers involved on the design, specification and integration of 

transformers and inductors for high power electronics converters. High power electronics 

converter designers. Magnetic components, inductors and transformers, designers and 

manufacturers.

12 

13 

Tutorials Monday, 15 May 2017, 09:00 – 17:00 


Tutorial 1 

New Trends in Power Conversion for Very High Efficiency 

and High Power Density 



Ionel “Dan“ Jitaru is the founder of Rompower Inc. an internationally 

recognized engineering firm in the field of power conversion, 

later Ascom Rompower Inc. and Delta Energy Systems 

(Arizona) Inc. Presently he is the president of Rompower Energy 

Systems Inc. He has published 52 papers wherein several of 

them have received the best paper award, and held 45 professional 

seminars at different International Conferences in the 

power conversion field. Mr. Jitaru has pioneered several trends 

in power conversion technologies such as “Soft Switching 

PWM”, “Full integrated multilayer PCB Magnetic”, “Synchronized 

rectification” and recently “True Soft Switching technologies” 

wherein the primary switchers turn on at zero voltage and 

the secondary switchers turn off at zero current. Some of these 

technologies have been covered by 63 intellectual properties 

wherein 37 are granted patents. 

Contents 

Presently, we are reaching 99% efficiency in PFC and DC-DC Converters by 

using the latest technologies, ranging from topology, magnetics and control. 

The developments in semiconductor technology such as GaN and SiC have enabled 

us to further improve the efficiency exceeding the 99% efficiency in 

some applications. The goal of this seminar is to teach how to increase the efficiency 

and power density in power converters. The first part of the seminar 

will identify the loss mechanisms in different power conversion applications. 

The next chapter will be dedicated to the latest improvements in topologies 

designed to minimize these loss mechanisms. Soft switching topologies have 

become popular in many applications in the last thirty years. Though we have 

such a long tradition in soft switching technologies, some of these topologies, 

have added too much complexity and their practical use become questionable 

due to the hardware cost and complexity. The goal is to have a simple and low 

cost hardware and an intelligent control designed to minimize the losses under 

different operating conditions. This seminar will present topologies which provide 

true soft switching. In the true soft switching topologies, the primary 

switching devices are turning on at zero voltage and the secondary switching 

devices are turning off at zero current. There is neither ringing nor spikes 

across any of the switching devices during operation, without the use of any 

snubbers. These topologies are derived from the classical topologies, such as 

flyback, boost, two transistor forward, half bridge, and full bridge with some 

minor modification with the use of intelligent control to obtain true soft 

switching. A detailed power dissipation analysis in several applications will 

highlight the need for magnetic optimization. In spite of the significant progress 

in the semiconductor industry, the magnetics technology lags behind. The 

seminar will describe the impact of the parasitic elements in the magnetics in 

optimizing the performance of the power converters. In the quest for 99% efficiency 

the magnetics and the packaging become key factors in efficiency optimization. 

The seminar will present the impact of intelligent power processing 

in optimizing the efficiency and even in converting a traditional hard switching 

topology into a soft switching topology. The presentation will be highlighted 

with many design examples and experimental results such as 99%+ efficiency 

PFC with power densities above 1000W/in3, and 99% efficiency isolated 

DC-DC Converter. 


This course is designed for power conversion engineers, magnetic engineers, and technical 

managers who are involved in state-of-art power conversion. The participants will get familiar 

with the latest advancement in magnetics in power conversion aimed to increase the performance 

and reduce the total cost. 

Tutorial 2 

What a Design Engineer Should Know About Power Factor 

Correction 

Richard Redl, Redl Consulting, Switzerland 


Dr. Redl is a power-electronics consultant in Switzerland, specializing 

in power supplies, UPSs, inverters, electronic ballasts, battery 

chargers and battery management systems, and integrated 

circuits for power management. He holds twenty-two patents, 

has written over hundred technical papers and three book chapters, 

and co-authored a book on the dynamic analysis of power 

converters. 

Contents 

The European norms EN61000-3-2 and EN61000-3-12 require that the current 

harmonics of all line-connected equipment stay below the limits set by those 

norms. In the case of equipment with a rectifier front end this is usually 

achieved by adding a power-factor correction (PFC) circuit to the system. This 

tutorial presents the causes of, and motivations for, PFC (nonlinear loads, 

line-current distortion and its effects on power transmission and power quality, 

harmonic regulations), discusses the energy storage considerations, introduces 

the basic passive and active solutions for single-phase and three-phase 

PFC, and reviews and evaluates the most interesting new developments. 

The following topics will be covered: 

1. Introduction 

1.1. Power factor definitions 

1.2. Causes and effects of line-current harmonics 

1.3. Overview of the harmonic regulations 

2. Single-phase PFC solutions 

2.1. Passive PFC (choke, LC and LLC waveshaping) 

2.2. Active PFC 

2.2.1. Energy storage considerations 

2.2.2. Power-circuit topologies 

2.2.2.1. Boost PFC and its derivatives (voltage-doubler, interleaved, multilevel) 

2.2.2.2. Other nonisolated converters (buck, two-switch buck-boost, SEPIC, 

Cuk, hybrid resonant) 

2.2.3. Isolated PFC (flyback without or with high-efficiency postregulation, 

isolated boost, transformer-coupled higher-order converters, 

bridgeless isolated converters, nonisolated PFC and isolated downstream 

converter combination, isolated single-stage converters 

with energy storage on the input side, charge-pump PFC) 

2.2.4. Control techniques 

2.2.4.1. Standard average-current control 

2.2.4.2. Boundary conduction control 

2.2.4.3. Inductor current control with modulated ramp 

2.2.4.4. Voltage-follower control with distortion reduction 

2.2.4.5. Controlling the two-switch buck-boost PFC 

2.2.4.6. Current reference signal generation 

2.2.4.7. Control for high efficiency 

2.2.4.8. Reducing capacitor current stress 

2.2.4.9. Design examples 

2.2.5. Practical issues (inrush current limit, generating bias power, 

protection, EMI reduction) 

3. Three-phase PFC solutions 

3.1. Passive PFC 

3.1.1. Rectifier bridge with dc-side or ac-side inductors 

3.1.2. Harmonic filter 

3.1.3. Multi-pulse rectification 

3.2. Active PFC 

3.2.1. Rectifier bridge and dc-side CCM boost converter combination 

3.2.2. Boost PFC in discontinuous inductor current mode 

3.2.2.1. Single-switch boost 

3.2.2.1.1. Distortion reduction by harmonic injection 

3.2.2.2. Two-switch zero-voltage-switching boost (“Taipei rectifier”) 

3.2.2.3. Three-level Taipei rectifier 

3.2.3. Buck PFC in discontinuous capacitor voltage mode 

3.2.4. Boost PFC in CCM 

3.2.4.1. Two-level Y and Δ converters 

3.2.4.2. Two-level bidirectional PFC 

3.2.4.3. Three-level PFC 

3.2.4.3.1. Low-frequency (“slow-switching”) version 

3.2.4.3.2. High-frequency version (“Vienna rectifier”) 

3.2.4.3.2.1. Topologies 

3.2.4.3.2.2. Control 

3.2.5. Buck PFC 

3.2.6. Four-switch buck-boost PFC 

3.2.7. Phase-modular and single-stage isolated PFCs 


This seminar is recommended to power-supply design engineers, system designers, managers, 

engineering students, PFC IC designers, and all other professionals interested in power-factor 

correction or line-harmonics reduction 

Tutorial 3 

Electromagnetic Design of High Frequency Converters 

and Drives 



Jacques Laeuffer has a 35 years’ experience of R&D in Power 

Electronics, inside international companies, with powers from 10 

W up to 10 MW, including HF resonant converters and high voltage 

transformers, electric machines and inverters for hybrid cars. 

He is inventor of 27 granted patents and author of over 80 technical 

papers. Affiliated professor at Ensta-ParisTech, he is also a 

teacher at CentraleSupelec, France, and for inter and intra companies 

international trainings, about power electronics, EMC, 

electric machines, digital control, mechatronics, cars powertrains, 

and history of physics. 

Contents 

Increasing high frequencies (HF), i.e. with wide bandgap semiconductors, lead 

to new challenges. The “wiring inductance” issue is dramatically increased. 

Windings show “parasitic capacitances”. Electric machines suffer insulation 

breakdowns by HF ringing over voltages. 

As a matter of fact, reduced commutations times become smaller than electromagnetic 

propagation delays, inside power conversion and intelligent motion 

systems. Thus conventional “electric circuit” equations do not operate anymore 

as before. The tutorial shows a new appropriate physical analysis to understand 

what happens, and make designs without noisy resonances and 

emissions, over voltages, extra losses. This way, full benefits from new semiconductors 

become possible. The tutorial shows 3D distributions of energies 

and powers, and focus on main phenomena to lead to simpler calculations. 

Number of practical designs are calculated, analytically and/or by simulation, 

showing orders of magnitudes for a wide range of powers, frequencies and impedances. 

Introduction 

Examples of issues. Noisy ringing inside converters and magnetics. 

Damping. Expected and non-expected actions of electromagnetic fields. 

Conduction and radiation. Differential mode (DM) and common mode (CM). 

Magnetic dominant and electric dominant fields. 

Tracks and Wiring Design 

Propagation on lines. Four impedances and speed. Power propagation, or 

filtering, or oscillation. Examples. Design bifilar, coaxial, and strip lines 

accordingly. 

Commutation loop with semiconductors and DC capacitor. SMD semiconductors 

and stacked capacitor layout. Power module, DC capacitor and 

busbars geometry. 

Capacitors and Windings Design 

Medium frequency (MF) capacitors sizing. Capacitors HF propagation 

management. 

MF sizing of foil, planar and multi-layers transformers. Sizing of electric 

machines stators windings. HF propagation in these windings. 

Windings equivalent schematics and simulation. Propagation delays calculation. 

How to avoid ringing. Design workflow for low EMI and low HF 

losses. 

Proximity effect and optimization. 

Converters and Drives Design 

Power propagation in converters. SiC and GaN. Cases of flyback, forward, 

bridge, ZVS and ZCS. 

Matching components and layout HF impedances. 

Intelligent motion drive made of inverter, electric machine, cable, shielding 

and ground, as DM and CM. 

HF simulation algorithms of the system, and design workflow for low EMI. 

Radiations Reduction 

Examples of emissions of electric and magnetic fields. 

Fields measurements and reduction. 

Neighbor field and far field identification. Examples. 

Wiring, grounding, shielding, packaging. 


This tutorial is targeted towards engineers and project managers, who design, specify, simulate, 

tune, integrate high frequency power supplies, converters, EMC filters, electric machines, 

and intelligent motion including inverter + power cable + electric machine, for high 

efficiency conversion, low global cost and high reliability..

14 

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Tutorial 4 

High Performance Control of Power Converters 

Christian Peter Dick, Jens Onno Krah, Cologne University of Applied Sciences, Germany 


Christian P. Dick studied Electrical Engineering at RWTH Aachen 

University, Germany, where he also received his PhD degree. Beginning 

of 2011 he joined SMA Solar Technology AG as director 

for advance development of solar converters up to 20kW. He is 

now professor for power electronics and electrical drives at Cologne 

University of Applied Sciences. Since years, Christian Dick 

is member of VDE and IEEE. His main research interests are resonant 

converters and the large-scale utilization of renewable energy, 

including automation and safety aspects. 

Prof. Dr. Ing. Jens Onno Krah studied electrical engineering at 

the University Wuppertal and obtained his PhD 1993 by Prof. 

Holtz within electrical drives research. Until February 2004 he 

worked as technical director for Kollmorgen, formerly Seidel 

Servo Drives. He was responsible for the development of the Kollmorgen 

Servo Drives. Since March 2004 Prof. Krah teaches control 

engineering at the University of Applied Sciences Cologne. 

Contents 

Utilizing power electronic based converter technology is a key approach to 

build energy efficient solutions. Due to the innovation cycles of the semiconductor 

suppliers the size and the cost of the more and more complex inverter 

systems is not increasing. However, especially the new fast switching wide 

bandgap devices (SiC & GaN) are challenging the control hardware. The advanced 

control architectures are covered by discussing algorithms and possible 

implementations using μC, DSP and FPGA technology. Robust controller 

designs with well-defined set up procedures or reliable self-tuning algorithms 

can help to use these innovations utilizing a reasonable set-up time. 

1. Converter Design Basics 

IGBT, MOSFET, SiC 

Buck, 2-Quadrant Chopper 

State-machine based dead time generation 

2-Level / 3-Level Inverter - including Energy Efficiency Classes 

Gate driver basics 

Flyback, resonant LLC 

2. Inverter Modulation Techniques 

Single Phase Modulator 

Pulse Width vs. Pulse Frequency Modulation 

2-Level / 3-Level SVM 

3. Analog to Digital Conversion 

Sigma-Delta DAC versus R-2R DAC and PWM 

Sigma-Delta Modulation 

Sinc³ decimation filtering 

Efficient FIR implementations, Demonstration, Examples 

4. Current Sensing 

Transducer versus shunt 

Synchronous sampling 

Aliasing, EMI suppression 

2 vs. 3 current probes in 3~ Loads 

5. Current Control 

Hysteresis Control 

Sampling Control 

Synchronous Control (FOC): Clarke, Park, decoupling 

Hybrid control 

(single-phase) PLL 

Dead-Time Compensation 

Buck, Flyback, resonant LLC 

6. Current Prediction 

Modeling the Plant 

Smith Predictor 

Current Observer 

7. Parameter Tuning 

Theoretical background 

Parameter estimation 

8. Conclusion and Future Trends 


This tutorial will be especially valuable for engineers and PhD’s who address the following 

control aspects: 

Digital Motion Control 

Mains Control, including PFC 

High-Bandwidth Sensor Circuitry including Robust Signal Transmission 

Modulation Techniques 

Controller Implementation using FPGA 

Controls-Related Novel Converter Issues like Wide-Bandgap Devices 

Tutorial 5 

Advanced System Design with Ultra-Fast Si/SiC/GaN Power 

Semiconductor Devices 

Tobias Reimann, ISLE Steuerungstechnik und Leistungselektronik, Germany 

Thomas Basler, Infineon Technologies, Germany 


Tobias Reimann received 1994 his PhD from the Technische Universität 

Ilmenau in the field of power semiconductor applications 

for hard and soft switching converters. In 1994 he was one of the 

founders of the company ISLE GmbH which is engaged in system 

development for power electronics and electrical drives. He is responsible 

for the operational business of this company. In addition, 

since July 2009 he is Professor for Industrial Electronics at 

the Technische Universität Ilmenau. Prof. Reimann is a member 

of scientific board of “Thuringian Center of Excellence in Mobility 

(ThIMo)” at the Technische Universität Ilmenau in the field of automotive 

electronics. 

Thomas Basler received his Diploma in Electrical Engineering 

from Chemnitz University of Technology in 2009. His Diploma 

thesis was on the robustness of power diodes. Between 2009 and 

2013 he was a member of the scientific staff at the Chair of 

Power Electronics and Electromagnetic Compatibility at Chemnitz 

University of Technology. At the beginning of 2014 he received 

his PhD. His thesis is about short-circuit and surge-current ruggedness 

of IGBTs and was supervised by Prof. Dr. Josef Lutz. 

2014 he joined Infineon Technologies AG, Neubiberg, Germany, 

where he works on the development of SiC MOSFETs, diodes and 

Si IGBTs. 

Contents 

Fast Power Devices / Modules / Reliability 

New developments in fast power devices (SiC/Si MOSFETs, IGBTs, GaN 

devices, freewheeling diodes) 

Device design, properties and suitable applications 

Reliability topics of (new) devices, e.g. gate oxide, dynamic Ron, cosmic ray 

ruggedness 

Power module layouts and optimal design for low inductivity 

Thermal mismatch, thermal stress, power cycling capability 

Drive and Protection 

Principles, technical realizations 

Special driver requirements for fast power devices (Si, SiC, GaN) 

Failure modes, failure detection 

Topology-dependent Power Losses 

dc/dc-converter 

dc/ac-converter 

Load Cycles 

Calculation of heat sink 

Device Induced Electromagnetic Disturbance 

Parasitics 

Oscillations in Power Modules 

Special Topics of Application 

Consideration of special problems and questions of participants, for example: 

Parallel/series connection of power devices 

Special effects in ZVS/ZCS topologies 

Special problems related to new device technologies 

Short-circuit ruggedness of IGBTs and SiC MOSFETs 


Engineers designing converters equipped with fast power semiconductors like Si/SiC MOS- 

FETs, IGBTs and diodes having basic knowledge in power devices and power converters. 

Tutorial 6 

Design Considerations for High Frequency Linear Magnetics 



Bruce Carsten has 46 years of experience in the design and development 

of switchmode power converters from 100 mW to 10 

kW and 20 kHz to 1 MHz. Although his specialities have become 

HF magnetics and design for low EMI, his background covers all 

aspects of switchmode design, from new control methodologies 

to new topologies, including the active clamp forward converter. 

He has authored or co-authored 59 papers, and has 17 patents. 

Contents 

In this tutorial the potential advantages of using internal cooling passages for 

significantly improved heat dissipation and power density in larger power magnetics 

will be shown. A comprehensive survey and ranking is provided on the 

propensity of various transformer, inductor and ‘hybrid’ or integrated magnetic 

structures to generate external magnetic fields, and thus significant potential 

EMI problems. Some new material will discuss the myths and misunderstandings 

of “coaxial” transformers, and their evident confusion with transmission 

line transformers. As in earlier versions, the tutorial focuses on an intuitive 

understanding of transformers and inductors. The basic design equations are 

provided, along with practical information “learned the hard way” which is not 

found in the text books. 

Topics include: 

The basics: Ferromagnetic Materials, Magnetic Energy Storage & Electromagnetic 

Energy Coupling 

Inductor Design: Maximizing Energy Storage, Winding Capacitances & 

Stray Fields 

Transformer Design: Leakage Inductance, Stray Fields, and use of Faraday 

Shields 

Measurement of Transformer Magnetizing and Leakage Inductances 

Calculation vs Measurement of Transformer Winding Capacitances 

Design Optimization 

Scaling Laws beyond the “Area Product”; Exploring Size and Shape Effects 

Thermal Management Considerations 

Magnetics Design Guidelines 


The tutorial is directed towards engineers who design or specify high frequency transformers 

and inductors, but any power electronic designer or project manager will benefit from an 

improved understanding of their capabilities, characteristics and limitations. 

Tutorial 7 

Reliability of Si and SiC Power Devices and Packages 

Josef Lutz, Chemnitz University of Technology, Germany 


Josef Lutz joined Semikron Electronics, Nuremberg, Germany in 

1983. First he worked in the development of GTO Thyristors, then 

in the field of fast recovery diodes. He introduced the Controlled 

Axial Lifetime (CAL) diode. Since August 2001 he is Professor for 

Power Electronics and Electromagnetic Compatibility at the 

Chemnitz University of Technology, Germany. His main fields of 

research are ruggedness and reliability of power devices. He is 

involved in several national and international research projects 

regarding power cycling lifetime of IGBT modules and further reliability 

aspects. He is one of the authors of the book “Semiconductor 

Power Devices – Physics, Characteristics, Reliability”, 

published by Springer 2011. 

Contents 

This tutorial focuses on thermal problems and other lifetime-limiting mechanisms 

in power devices; aspects going from Si to SiC are considered. 

1. Basic architecture of Si and SiC power modules and discrete packages 

2. Materials, substrates and interconnection technologies 

3. Heat transport, thermal resistance, thermal impedance, cooling methods 

4. Temperature determination 

Virtual junction temperature: Definition, measurement 

Temperature sensitive electrical parameters in Si, SiC, GaN 

5. Fatigue processes, fatigue detection, related tests 

6. Power cycling as main method to determine package related lifetime 

expectation 

Experimental setup, test strategies 

Test according to the German automotive standard LV 324 

New methods for state-of-health analysis 

Temperature measurement accuracy improvement 

7. Empirical models for lifetime prediction 

LESIT model, CIPS 2008 model 

Application of available models, limits, work on new models 

Special aspects with SiC devices 

Special aspects with discrete packages 

8. Improved technologies and future trends for increased lifetime expectation 

Diffusion sintering, Diffusion soldering, 

Improved bond wires, 

Improved substrates 

9. Gate oxide reliability in Si and SiC 

10. Some aspects on cosmic ray reliability 


Engineers in design of converters with IGBTs and SiC devices with interest in reliability, beginners 

as well as experienced engineers are welcome.

16 

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Tutorial 8 

Driving Electric - Power Train, Battery, Wireless Charging and 

Autonomous Driving 

Nejila Parspour, Peter Birke, Dan Keilhoff, University of Stuttgart, Germany 

Martin Doppelbauer, Karlsruhe Institute of Technology, Germany 


Nejila Parspour is Professor of Electrical Energy Conversion at the 

University of Stuttgart and director of the Institute of Electrical 

Energy Conversion (iew). She received her Master in electrical 

engineering in 1991 and her PhD in 1995, both from Technical 

University of Berlin. Before joining the University of Stuttgart and 

after a Postdoc work at the University of Berkley, she collected 

five years of industrial experience at Philips as senior manager in 

the area of industrial X-ray and six years of scientific experience 

at the University of Bremen. Her research and teaching activities 

are in the field of electrical machines and drives with a focus on 

machine design and in the field of contactless energy transfer 

with a focus on inductive charging systems. In the field of electromobility 

Nejila Parspour has meanwhile acquired in-depth 

knowledge due to her intensive scientific work during the last 

14 years, particularly in developing position-tolerant inductive 

charging systems and high efficiency electrical motors. 

Prof. Dr Kai Peter Birke obtained his PhD in materials science (ion 

conducting ceramics) from the University of Kiel in 1997. In 1998, 

he joined the Fraunhofer-Institute for Silicon Technology, Itzehoe, 

Germany, to work on the development of proprietary Li-Ion laminated 

cell with a functional ceramic separator and co-founded 

two spin-offs to put this technology into production. After being 

involved in the development and production of pouch type laminated 

(PoLiFlex) Li-Ion cells at Varta for five years, Dr. Birke 

joined Continental AG in Berlin in 2005, first as a project leader in 

energy-storage systems. He became senior technical expert in 

battery technology and team leader in cell technology, and in 

2010 was appointed Head of Battery Module and Electromechanics. 

Dr. Birke has 22 years of experience in research, development, 

and production of energy storage systems with a focus on 

Li-Ion technology. Since 2015 he has been a full Professor at the 

University of Stuttgart, covering the field of Electrical Energy 

Storage Systems. 

Dr. Dan Keilhoff received his diploma in Automotive Engineering 

in 2004. He worked 8 years at the Daimler AG, being responsible 

for the development of software functions for the exhaust gas aftertreatment 

system. He joined the Stuttgart University in 2012. 

His topic for the following 4 years was research regarding operation 

strategies for hybrid powertrains and powertrain simulation. 

After receiving his PhD in 2016 he became the assistant of Prof. 

Reuss, who holds the chair for Automotive Mechatronics. The 

work field of Dr. Keilhoff is research and teaching in terms of automated 

and connected driving. 

Prof. Doppelbauer worked for 15 years in the industry, lastly as 

Senior Manager of the Electric Motor R&D department at SEW 

Eurodrive, Bruchsal. He joined the Karlsruhe Institute of Technology 

in 2011 where he holds a chair for Hybrid Electric Vehicles at 

the Institute of Electrical Engineering. Prof. Doppelbauer is also 

actively working in international standardization of rotating electric 

machines and currently the chairman of IEC Technical Committee 

2. 

Contents 

This tutorial aims giving an overview about the state of the art in electric driving 

and showing the newest trends in research and technology. In particular, 

four subjects will be introduced and discussed. These are powertrain, inductive 

charging, battery system and autonomous driving. Each subject will be 

treated in a session including a presentation followed by a question and answer 

part. The tutorial will start with the presentation entitled Inductive Charging. 

After a brief review of transformer basics, requirements and specific behavior 

of inductive charging systems are identified. Besides analytical calculation, 

especially with different reactive power compensation topologies, a classification 

as well as the principles of operation will be explained and safety and reliability 

of contactless energy transfer will be discussed. The second 

presentation entitled Battery systems deals with actual and future battery 

technologies and will give an introduction to the principle of function of Lithium-Ione 

cells followed by a discussion of the power density and energy density 

development, materials, new battery trends, cell technology and the vision 

of electric energy storage and the operating range. The third presentation is 

entitled Electric Drives of Hybrid and Battery Electric Vehicles. Main contents 

are drive configurations as well as operating principles and behaviors of electric 

machines and drivetrains. Further, special features of permanent magnet 

synchronous motors will be introduced. The presentation closes with an overview 

of new electric motor designs and an outlook to future developments. 

The tutorial will be closed by the presentation entitled Automated driving of 

electric vehicles. Starting with a definition and classification of the autonomous 

driving, the focus of this presentation will be on the partial automation 

of electric vehicles in order to improve energy consumption as well as on field 

studies with volunteers to investigate the acceptance of automated driving.s 


People who want to get an overview on current developments in the field of electrical driving, 

particularly on power train, inductive charging, battery system and autonomous driving. 

Tutorial 9 

Design Challenges for High Frequency Magnetic Circuit Design 

for Power Conversion 

William Gerard Hurley, Werner Hugo Wölfle, National University of Ireland, Ireland 


William Gerard Hurley received the B.E. degree in Electrical Engineering 

from the National University of Ireland, Cork in 1974, the 

M.S. degree in Electrical Engineering from the Massachusetts Institute 

of Technology, Cambridge MA, in 1976 and the PhD degree 

at the National University of Ireland, Galway in 1988. He 

worked for Honeywell Controls and Ontario Hydro in Canada from 

1977 to 1983. He is currently Director of the Power Electronics 

Research Centre at the National University of Ireland, Galway. He 

is a Fellow of the IEEE. He received the IEEE Power Electronics 

Society Middlebrook Technical Achievement Award in 2013 and 

was appointed Distinguished Lecturer of the IEEE for 2014-2017. 

He has co-authored a text book on magnetics for power electronics. 

Werner Hugo Wölfle graduated from the University of Stuttgart in 

Germany in 1981 as a Diplom-Ingenieur in Power Electronics. He 

completed a PhD degree at the National University of Ireland, 

Galway in 2003. He worked for various companies in the field of 

Power Electronics as a Development Engineer for power converters 

in space craft, military and high grade industrial applications. 

Since 1989 he is Managing Director and head of the R&D Department 

of Traco Power Solutions in Ireland. Traco Power Solutions 

develops high reliability power converters and power supplies for 

industrial applications. Mr. Wölfle is currently an adjunct professor 

in Electrical Engineering at the National University of Ireland, 

Galway. He has co-authored a text book on magnetics for power 

electronics. 

Contents 

The key to reducing the size of power supplies is high frequency operation and 

magnetic components can play a critical role. The tutorial begins with the design 

rules for inductor design and examples of different types of inductors are 

given. A special example is the inductor in a flyback converter, since it has 

more than one coil. This is followed by the general design methodology for 

transformers and many examples from switched mode power supplies and resonant 

converters are given. The main focus is placed on modern circuits where 

non-sinusoidal waveforms are encountered. General rules are established for 

optimising the design of windings under various excitation and operating conditions. 

The skin effect and the proximity effect give rise to increased losses in 

conductors due to the non-uniform distribution of current in the conductors. A 

new approach to high frequency losses that avoids cumbersome Fourier analysis 

will be presented to optimise the winding design, for non-sinusoidal waveform 

encountered in practical power electronics. Core losses for both 

sinusoidal and non-sinusoidal flux will be covered. This tutorial is based on a 

textbook authored by the speakers: Transformers and Inductors for Power 

Electronics: Theory, Design and Applications, Wiley, 2013. 

Content: 

Introduction 

The Introduction covers the fundamental concepts of magnetic components 

that serve to underpin the later sections. 

Inductor Design 

In Section I, the design rules for inductor design are established and examples 

of different types of inductors are given. The single coil inductor, be it in air or 

with a ferromagnetic core or substrate, is the energy storage device for magnetic 

fields. A special example is the inductor in a flyback converter, since it 

has more than one coil. Examples include: forward, flyback, pushpull and LLC 

resonant converters; filter chokes. 

Transformer Design 

Section II deals with the general design methodology for transformers. Particular 

emphasis is placed on modern circuits where non-sinusoidal waveforms 

are encountered and power factor calculations for non-sinusoidal waveforms 

are covered. Examples include: forward, pushpull and resonant converters. 

High Frequency Design 

There is an inverse relationship between the size of a transformer and its frequency 

of operation. However, losses increase at high frequency. There is skin 

effect loss and proximity effect loss in the windings due to the non-uniform 

distribution of the current in the conductors. The core loss increases due to the 

eddy currents circulating in the magnetic core and due to hysteresis. General 

rules are established for optimising the design of windings under various excitation 

and operating conditions. A new approach to high frequency losses that 

avoid cumbersome Fourier analysis will be presented to optimise the winding 

design. Losses that result from fringing effect of the magnetic field around an 

air-gap will be covered. The use of litz wire for mitigating skin and proximity 

effects will be treated. The application of interleaving to reduce proximity effects 

will be explained. 


This tutorial is of interest to and practising engineers working with power supplies and energy 

conversion systems; students of electrical engineering and electrical energy systems; 

graduate students dealing with specialised inductor and transformer design for high frequency 

operation 

Tutorial 1 0 

Reliability Engineering in Power Electronic Systems 

Frede Blaabjerg, Francesco Iannuzzo, Huai Wang, Aalborg University, Denmark 


Frede Blaabjerg is currently a Professor with the Department of 

Energy Technology and the Director of Center of Reliable Power 

Electronics (CORPE), Aalborg University, Denmark. He has intensive 

research work on power electronics and its applications in 

motor drives, wind turbines, PV systems, harmonics, and the reliability 

of power electronic systems. He has held more than 300 

lectures national and international, most of them in the last decade 

are invited and as keynotes at conferences, covering various 

topics on power electronics, including the reliability. He has contributed more than 300 journal 

papers, and given more than 300 invited national/international lectures. Among other 

awards, Dr. Blaabjerg received the IEEE William E. Newell Power Electronics Award in 2014. 

Francesco Iannuzzo is currently a Professor of Reliable Power 

Electronics at the Aalborg University, Denmark, and CORPE (Center 

of Reliable Power Electronics). His research interests are in 

the field of reliability of power devices, including against cosmic 

rays, power device failure modelling and testing of power modules 

under extreme conditions. He has contributed more than 120 

journal and conference papers in the field. Prof. Iannuzzo was the 

Technical Chair in two editions of ESREF, the European Symposium 

on Reliability and Failure analysis. 

Huai Wang is currently an Associate Professor with the Center of 

Reliable Power Electronics (CORPE), Aalborg University, Denmark. 

His research addresses the fundamental challenges in 

modelling and validation of the failure mechanisms of power 

electronic components, and application issues in system-level 

predictability, circuit architecture, and robustness design. Prof. 

Wang received the IEEE PELS Richard M. Bass Outstanding 

Young Power Electronics Engineer Award, in 2016. He has served 

as an Associate Editor of IEEE Transactions on Power Electronics 

since 2015. 

Contents 

In many mission-critical applications of energy conversions such as renewables, 

industry, electric vehicles, and aircrafts, etc., power electronics should 

be extremely reliable and robust to avoid high cost of failures. In order to meet 

this challenging requirement, there is an ongoing paradigm shift in this field 

from the statistics-based assessment to the physic-of-failures based analysis. 

In this shift, the stress and strength models of the power electronics systems 

need to be accurately built, and both of the factors are closely related to the 

operating conditions or mission profiles of the whole systems. These mission 

profiles will involve multi-disciplinary knowledge and new engineering approaches 

for the design of reliability performances. 

In this tutorial, the paradigm shift in reliability research on power electronics 

as well as some reliability engineering concepts are first introduced. Afterwards 

some basics about reliability engineering are presented, followed by a 

specific section on abnormal condition testing, and another one on condition 

monitoring and active thermal control. Based on these results, a series of new 

modelling and control concepts are given to evaluate/improve the reliability 

performances of power electronics systems considering mission profiles with 

several examples on renewable energy and motor drives. Finally, the tutorial 

will also present the views of the instructors on the future research opportunities 

in the area of reliability of power electronics. The approaches presented in 

the tutorial are also the common interest for the companies involved in the 

Center of Reliable Power Electronics (CORPE) at Aalborg University. 

Content: 

Towards Reliable Power Electronics 

Motivations, field experiences and challenges 

Ongoing paradigm shift in reliability research 

Design for reliability concept 

Basics about reliability engineering and metrics 

Weibull distribution, Reliability, Failure rates, and Bx lifetime 

Concepts of FMEA, HALT, CALT, Six sigma design, etc. 

Importance of mission profiles 

Abnormal condition testing basics for power electronic components 

Impact of severe and abnormal events on the reliability performances 

Basic of instabilities and related phenomena 

Instabilities during short circuit of IGBTs

18 

19 



Awards 

Non-destructive testing technique and setups 

Condition monitoring and active thermal control for improved reliability 

Basics ideas and control freedoms 

Thermal measurement and monitoring 

Control under normal operations of converter 

Control under severe and abnormal conditions 

Advanced Design Tool for Reliability of Power Electronics Systems 

Multi timescales modelling of power electronics system 

New thermal models of IGBT for mission profile translation 

Rain flow counting, accumulated damages and Monte Carlo simulation 

Examples on Wind power, PV power and LED lighting systems 

Case study: a 5kW fuel-cell system 

From system level requirement to component level reliability allocation 

Select proper commercially available components to fulfill the system 

level reliability requirement 

Future Research Opportunities in Reliability of Power Electronics 

Interdisciplinary efforts and opportunities ahead 


Engineers or researchers in power electronics design and testing with interest in improving 

reliability performance. Beginners as well as experienced engineers are both welcome. 

Focus is more on the reliability engineering including testing and modelling aspects from 

components to system level. 

General and technical definitions on energy storage 

Energy storage technologies 

Comparative ratings and properties 

The theory of Ragone plots 

Modeling, electrical models, thermal modeling, multiphysics modeling 

Electrochemical energy storage 

Energy storage by means of supercapacitors 

Energy storage systems based on compressed air 

Hydropower pumped storage facilities (Variable speed) 

Energy storage based on hydrogen 

Dedicated power electronic circuits 

Examples of design, examples of applications, calculation of efficiency, 

thermal models, etc. 


The tutorial is addressed to all engineers active in power, power systems, renewable energy 

sources, automotive, traction systems and all applications where energy saving potential exists. 

The tutorial is oriented on an « engineer approach », presenting tools and definitions 

helping the design of dedicated systems. The tutorial is a complement to the matter teached 

in classical university orientations, bridging the knowledge between basic sciences and engineering 

sciences, covering an interdisciplinary range. 

The nominees are: 

Best Paper Award 

The Best Paper Award honours the best paper of the conference. 

The award ceremony and speech will be part of the PCIM Europe 

Conference opening ceremony. 

IGBT Gate Driver with Accurate Measurement of Junction Temperature and Inverter Output Current 

Marco Denk, Mark-M. Bakran, University of Bayreuth, D 

Air Cooled SiC Three Level Inverter with High Power Density for Industrial Applications 

Alexander Hensler, Thomas Bigl, Stephan Neugebauer, Stefan Pfefferlein, Siemens, D 

Medium Frequency Transformer Design and Optimization 

Marko Mogorovic, Drazen Dujic, École Polytechnique Fédérale de Lausanne, CH 

Design and Performance of a 200 kHz GaN Motor Inverter with Sine Wave Filter 

Franz Stubenrauch, Norbert Seliger, University of Applied Sciences Rosenheim, D 

IGCT based Modular Multilevel Converter for an AC-AC Rail Power Supply 

David Weiss, Michail Vasiladiotis, Noemi Drack, ABB Switzerland, CH; Andrea Grondona, ABB, SE 

Design Method for the Minimization of CM Inductor Volume with Consideration of Core 

Saturation in EMI Filters 

Bilel Zaidi, Arnaud Videt, Nadir Idir, University of Lille (L2EP), F 

Young Engineer Award 

The Young Engineer Award goes to the three best lectures from 

engineers not older than 35 years and will be also honoured in the 

PCIM Europe Conference opening ceremony. 

The nominees are: 

Development of a High Efficient MPPT for Space Applications Using GaN Power Transistors 

Cornelius Armbruster, Christian Schöner, Fraunhofer Institute ISE, D; Torben Schönbett, 

Alfons Klönne, Rainer Merz, University of Applied Sciences Karlsruhe, D 

IGBT Gate Driver with Accurate Measurement of Junction Temperature and Inverter Output 

Current 

Marco Denk, Mark-M. Bakran, University of Bayreuth, D 

Reducing dv/dt of Motor Inverters by Staggered- Edge Switching of Multiple Parallel SiC 

Half- Bridge Cells 

Thomas Fuchslueger, Hans Ertl, Technical University of Vienna, AT; Markus A. Vogelsberger, 

Bombardier Transportation, AT 

Air Cooled SiC Three Level Inverter with High Power Density for Industrial Applications 

Alexander Hensler, Thomas Bigl, Stephan Neugebauer, Stefan Pfefferlein, Siemens, D 

Parasitic Inductance Analysis of a Fast Switching 100 kW Full SiC Inverter 

Matthias Kegeleers, Julian Körner, Stefan Matlok, Maximilian Hofmann, Martin März, 

Fraunhofer Institute IISB, D 

Tutorial 11 

Energy Storage - Systems and Components 

Alfred Rufer, EPFL, Switzerland 

This award is sponsored by: 

Digital Control of Hard Switched Converters by Phase Modulated Pulse Width Modulation 

PMPWM 

Stefan Matlok, Bernd Eckardt, Bernd Seliger, Martin März, Fraunhofer Institute IISB, D 


Alfred Rufer is honorary professor in power electronics at the 

Swiss Federal Institute of Technology EPFL, Lausanne Switzerland. 

He has been leading the Industrial Electronics Lab (LEI- 

EPFL) from 1997 to 2016. Beneath many research projects in 

power electronic circuits and applications, he has initialized several 

activities in energy storage systems and components, from 

the design and modeling of supercapacitor based power assistance 

systems to multiphysics modeling of complex storage devices 

as Vanadium Redox Flow Batteries or CAES, Compressed 

Air Energy Storage. Alfred Rufer has authored or co-authored 

more than 250 scientific papers in international conferences and 

journals. He has supervised over 30 PhD students. Prof. Rufer is a 

fellow of the IEEE and has received many IEEE Transactions or 

Conference Prize Paper Awards. In addition, Alfred Rufer is a 

honorary board member of the PCIM conference where he served 

as a General Conference Director. 

Dual Side-Gate HiGT Breaking Through the Limitation of IGBT Loss Reduction 

Tomoyuki Miyoshi, Yujiro Takeuchi, Tomoyasu Furukawa, Masaki Shiraishi, and Mutsuhiro 

Mori, Hitachi, J 

Medium Frequency Transformer Design and Optimization 

Marko Mogorovic, Drazen Dujic, École Polytechnique Fédérale de Lausanne, CH 

Power Loss Evaluation of 2.5 MHz High Frequency Inverter Based on Frequency Multiplying 

Method 

Koji Orikawa, Satoshi Ogasawara, Hokkaido University, J; Jun-ichi Itoh, Nagaoka University 

of Technology, J 

Design and Performance of a 200 kHz GaN Motor Inverter with Sine Wave Filter 

Franz Stubenrauch, Norbert Seliger, University of Applied Sciences Rosenheim, D 

IGCT based Modular Multilevel Converter for an AC-AC Rail Power Supply 

David Weiss, Michail Vasiladiotis, Noemi Drack, ABB Switzerland, CH; Andrea Grondona, 

ABB, SE 

Contents 

From the second half of the 20st century, large facilities for electrical energy 

storage have been built in the context of matching the variable power demand 

with installations of large nuclear power stations known for their mostly constant 

power production. More recently, another tendency has appeared with 

the development of Renewable Energy Sources. From the classical centralized 

utility of today, a clear movement goes in the direction of distributed utility, together 

with the appearance of Smart Grids. Renewable energy sources are 

known by their variation in time, or available power related to meteorology 

conditions. This is a new motivation for the development and realization of 

new energy storage techniques. The use of RES, but also the integration of 

storage devices is mainly achieved with interconnection to electrical systems 

and need appropriate electric power conversion. 

Design Method for the Minimization of CM Inductor Volume with Consideration of Core 

Saturation in EMI Filters 

Bilel Zaidi, Arnaud Videt, Nadir Idir, University of Lille (L2EP), F 

These awards are sponsored by:

20 

21 

Keynotes 

Speaker: Robert Lassartesses, 

Renault, France 

Chairperson: Jean-Paul 

Beaudet, Schneider Electric, 

France 

Speaker: Hans Krattenmacher, 

SEW-Eurodrive, 

Germany 

Chairperson: Leo Lorenz, 

ECPE, Germany 


Long distance charging solutions for BEVs: from now to 2030 

Robert Lassartesses, Renault, F 

This keynote will describe different charging solutions which are already available for a 

long-distance drive with a BEV (battery electrical vehicle) today as well as the trends for the 

future. Pro and contra will be shown. The today trend is to increase the battery and the fix 

charger power. However, this trend limits the mass market for BEVs. The keynote will show 

some of these limits on the car point of view (battery cost/packaging/weight, uncertainty on 

specific material availability and environmental consideration). Game changer as charging 

during driving could solve these mass market car roadblocks. Charging during driving transfers 

an important investment part from BEV to infrastructure by reducing battery size or in 

other words transfers investment from the BEVs owners to the public. If we consider that 

5000 euros could be saved by reducing the needed battery size and if we consider 30 % EVs 

to be sold each year, it would represent 3 billion euros investment each year for road infrastructure 

only for a country like France. In any case, hundreds of billions will be needed 

though the world to equip the road in coherence with the high number of BEV expected from 

now to 2030. To insure profit, each investment needs to be secure for a least 10 years. A very 

good long term common understanding in the system BEV+ charging infrastructure roadmap 

is needed between partners to insure BEV success. Even today, if the mainstream of the EV 

industry invests in huge numbers of powerful fix charger (right now from 43 kW AC to DC 

350 kW), many solutions could arrive aside the mainstreams to insure possible lack of fix 

chargers in dedicated areas or specific timeslots (winter vacations…). 


The Smart Future of Power Electronics and its Applications 

Hans Krattenmacher, SEW-Eurodrive, D 

Top-class 

keynotes each 

conference day 

Power electronic components have been used for decades in devices in the field of electric 

drives e.g. inverters, power supplies etc. One of the most important devices is the conventional 

frequency inverter which is employed in countless applications of the conveyor technology, 

materials handling technology as well as the field of machine automation. The 

technology and therefore the power electronics have been adjusted, improved, optimized and 

perfected to fit the applications throughout the years. However, the application itself hardly 

changed as the main focus lied on making it faster, more efficient and more robust. 

The scope of Industry 4.0 possibly brings fundamental changes to the manufacturers of these 

plant automation technologies leading to completely different tasks, ways of thinking and requirements 

and therefore different solutions. 

The traditional stationary materials handling technology, in which many gearmotors and electronic 

components are built into, will be replaced by mobile materials handling systems. 

Based on this knowledge it can be concluded that the product in its current form will no longer 

be needed in the solutions of tomorrow. 

The production philosophy for the future SMART Factory will be organized and operated in a 

completely new way. Power Electronics will remain an enabling technology however the converter 

technology will become “SMART”. SEW as a trendsetter for the future SMART Factory 

Speaker: Ionel Dan 

Jitaru, Rompower, USA 

Chairperson: Philippe 

Ladoux, University of 

Toulouse, France 

which will be demonstrated as an example. This keynote aims to outline how this fundamental 

change of the well-known applications in the field of intralogistics as well as materials 

handling technology may look and what consequences it will lead to. 


Evolution in Topologies as a Result of New Devices and Enabling Technologies Ionel 

Dan Jitaru, Rompower, USA 

The topic that new topologies may be needed as the progress in semiconductor industry and 

other enabling technologies are emerging, has been raised with different occasions. In order 

to make a prediction of such developments we need to look into the evolution of the basic 

topologies in the last thirty years and analyze the impact introduced by the new semiconductor 

devices, magnetic technologies and control ICs. Though in the last thirty years no more 

topologies were introduced, we noticed a clear shift in the “preferred topologies” used by 

engineers in power conversion. That shift did occur mostly due to the progress in semiconductor 

devices. Another key role was played by the type of applications in power electronics 

which changed some of the specifications and favored some topologies over others. Recently 

the availability of digital control has opened the door to intelligent power processing, and allowed 

us, for example, to take a conventional topology and convert it in “soft switching topology” 

without any changes in the hardware. 

This presentation will look at the progress of some topologies over the years such as flyback 

topology, forward derived topologies including the two transistors forward, half and full 

bridge topologies and the changes made in order to further improve the performances. 

Though some of the “old” topologies were not fundamentally changed, modifications did 

occur for performance enhancement. As an example, the flyback topology evolved over the 

years initially through the magnetic optimization, and further through control methodology, 

wherein in the latest flyback topology the energy contained in all the parasitic elements in 

harvested and the performances greatly improved, achieving soft switching in primary and 

secondary with minimum hardware changes. The same does apply for the half bridge and 

full bridge topology, wherein the latest generation of half bridge and full bridge topologies 

do have soft switching both in primary and secondary across the synchronous rectifiers and 

this is done mostly through the intelligent power processing, possible today due to the digital 

control. Even in the case of two transistor forward topology, one of the most popular topology 

over many years, has recently benefited by some key improvements. The latest two 

transistor forward topology achieves soft switching both in primary and secondary, with 

minor hardware changes and through intelligent control. The same evolution is achieved also 

in the traditional boost converter, which evolved in the latest applications in PFC wherein the 

efficiency went above 99% mostly due to the GaNs and intelligent control. Though the basic 

boost topology remained the same, some modifications were introduced to improve the performances 

and convert it into a true soft switching topology. After scanning the improvements 

in the last 30 years in power conversion it is concluded that the traditional topologies 

were not replaced but they evolved especially in the last ten years due to the introduction of 

new devices and the availability of intelligent power processing through digital control. The 

paper will be highlighted with design examples of such improvements of the basic topologies 

over the years.

22 

23 

Conference Tuesday, 16 May 2017 

Morning Oral Sessions 

09:00 Room Brüssel 1 Conference Opening and Award Ceremony 

09:45 Room Brüssel 1 KEYNOTE:Long Distance Charging Solutions for BEVs: from now to 2030, Robert Lassartesses, Renault,F 


Room Brüssel 1 

HV-SiC-MOSFET 


Power Converters with Wide Bandgap 

Devices I 

Room München 1 

Materials 


Sensorless Drives 

Room Mailand 

Modular Multilevel Converter for High 

Voltage Applications 

Chairperson: Gourab Majumdar, 

Mitsubishi Electric Corporation, J 

Chairperson: Francisco Azcondo, 

University of Cantabria, ES 

Chairperson: Nando Kaminski, 

University of Bremen, D 

Chairperson: Manfred Schrödl, 

Vienna U niversity of Technology, AT 

Chairperson: Drazen Dujic, Power 

Electronics Laboratory, EPFL, CH 

11:00 

3.3 kV/450 A Full-SiC nHPD2 (next High Power Density 

Dual) with Smooth Switching 

Takashi Ishigaki, Seiichi Hayakawa, Tatunori Murata, Tetsuo 

Oda, Yuji Takayanagi, Renichi Yamada, Hitachi Power 

Semiconductor Device, J; Toru Masuda, Naoki Tega, Akio 

Shima, Hitachi, J; Katsuaki Saito, Hitachi Europe, GB 

11:30 

Characterization of 3.3kV and 6.5kV SiC MOSFETs 

Takui Sakaguchi, Masatoshi Aketa, Takashi Nakamura, 

ROHM, J; Masaharu Nakanishi, ROHM Semiconductor, D; 

Munaf Rahimo, 

ABB Switzerland, CH 

12:00 

Dynamic Characterization of Next Generation Medium 

Voltage (3.3 kV, 10 kV) Silicon Carbide Power Modules 

Ty McNutt, Jonathan Hayes, Lauren Kegley, William A. 

Curbow, Daniel Martin, 

Brett Sparkman, Wolfspeed, USA 

12:30 

3.3kV All-SiC Power Module for Traction 

System Use 

Tetsu Negishi, Ryo Tsuda, Kenji Ota, Shinichi 

Iura, Hiroshi Yamaguchi, Mitsubishi 

Electric Corporation, J; Eckhard Thal, Mitsubishi 

Electric Europe, D 

11:00 

Two-Switch Quasi-Resonant Flyback Converter with SiC 

Switches 

Stefan Schmitt, Watts & Bytes, F; Jens Marten, BLOCK 

Transformatoren, D 

11:30 

Characterization of 1.7 kV SiC MOSFET Modules for Medium/High 

Power Current Source Inverter in Photovoltaic 

Applications 

Luis Gabriel Alves Rodrigues, Jérémy Martin, Stéphane 

Catellani, Commissariat à l´Énergie Atomique et aux Énergies 

Alternatives, F; Jean-Paul Ferrieux, G2Elab, F 

12:00 

Power Loss Evaluation of 2.5 MHz High Frequency 

Inverter Based on Frequency Multiplying Method 

Koji Orikawa, Satoshi Ogasawara, Hokkaido University, J; 

Jun-ichi Itoh, Nagaoka University of Technology, J 

12:30 

Gate Driver Architectures for High Speed Power Devices 

in Series Connection 

Jean-Christophe Crebier, Van-Sang Nguyen, Pierre LeFranc, 

G2Elab, F 

11:00 

Reliable Interconnection Technologies for High-Temperature 

Operation of SiC MOSFETs 

Fabian Mohn, Chunlei Liu, Jürgen Schuderer, ABB Switzerland, 

CH 

11:30 

Sintering Copper Die-Bonding Paste Curable Under 

Pressureless Conditions 

Hideo Nakako, Dai Ishikawa, Chie Sugama, Yuki Kawana, 

Motohiro Negishi, Yoshinori Ejiri Hitachi Chemical, J 

12:00 

Taking Power Semiconductors to the Next Level: 

Novel Plug & Play High Thermal Performance Insulated 

Christian Kasztelan, Thomas Basler, Infineon Technologies, 

D 

12:30 

Development of Thermal Fatigue-Tolerant 

Active Metal Brazing Substrates 

Using Highly-Thermal Conductive Silicon 

Nitrides with High Toughness 

Hiroyuki Miyazaki, You Zhou, Kiyoshi 

Hirao, Shinji Fukuda, Noriya Izu, Hideki 

Hyuga, National Institute of Advanced Industrial 

Science and Technology (AIST), J; 

Shoji Iwakiri, Hideki Hirotsuru, Denka Company 

Limited, J 

11:00 

Initial Rotor Position Determination of a Soft Starter 

Driven Synchronous Motor 

Hauke Nannen, Heiko Zatocil, Siemens, D 

11:30 

A Robust Encoderless Predictive Current Control Using 

Novel MRAS Observer for Surface-Mounted Permanent-Magnet 

Synchronous Generators 

Mohamed Abdelrahem, Christoph Hackl, Ralph Kennel, 

Technical University of Munich, D 

12:00 

FPGA–based Sensorless Control of a PMSM at Low– 

Speed Range 

Fernando David Ramirez Figueroa, Mario Pacas, University 

of Siegen, D; Cesar Gonzalez, Tecnologico de Monterrey, MX 

12:30 

Application of a Position Sensorless Control to a Reluctance 

Synchronous Drive Including Flux Weakening 

Matthias Hofer, Manfred Schrödl, Vienna University of 

Technology, AT 

11:00 

Four-Level MMC Cell Type with DC Fault Blocking 

Capability for HVDC 

Viktor Hofmann, Mark M. Bakran, 

University of Bayreuth, D 

11:30 

Virtual Submodule Concept Applied to 

the Modular Multilevel Converter 

Alexandre Christe, Drazen Dujic, 

EPFL - Ecole polytechnique fédérale de 

Lausanne, CH 

12:00 

IGCT based Modular Multilevel 

Converter for an AC-AC Rail 

Power Supply 

David Weiss, Michail Vasiladiotis, Noemi 

Drack, ABB Switzerland, CH; Andrea 

Grondona, ABB, SE 

12:30 

Development of A Full-Bridge Sub-Module for HVDC 

and STATCOM Markets 

Jerome Perrier, GE’s Grid Solutions, GB; 

Tianning Xu, Alstom Grid, GB 

12:30 – 14:00 Lunch Break 

Award nominee. More information on page 19.

24 

25 

Conference Tuesday, 16 May 2017 

Afternoon Oral Sessions 


SiC MOSFET 


Power Converter Design 


Current Sensors 


New and Renewable Energy Systems 

Room Mailand 

SPECIAL SESSION: 

Smart Grid & Communication 

Chairperson: Andreas Lindemann, 

Otto-von-Guericke-University 

Magdeburg, D 

Chairperson: Stéphane Lefebvre, 

SATIE, F 

Chairperson: Bernhard Strzalkowski, 

Analog Devices, D 

Chairperson: Friedrich-Wilhelm 

Fuchs, Christian-Albrechts-University 

of Kiel, D 

Chairperson: Jean-Paul Beaudet, 

Schneider Electric, F 

14:00 

The new CoolSiC Trench MOSFET Technology for Low 

Gate Oxide Stress and High Performance 

Dethard Peters, Thomas Basler, Bernd 

Zippelius, Infineon Technologies, D 

14:30 

Short-Circuit Robustness of Discrete Silicon Carbide 

MOSFETs in Half-Bridge Configuration 

Nicolas Degrenne, Anthony Roy, Johan Le Lesle, Erwan 

David, Stefan Mollov, 

Mitsubishi Electric, F 

15:00 

Design Rules To Adapt The Desaturation Detection For 

SiC MOSFET Modules 

Teresa Bertelshofer, Andreas März, Mark-M. Bakran, University 

of Bayreuth, D 

15:30 

Device Simulation Modeling of 1200 V SiC MOSFETs 

Benedetto Buono, Martin Domeij, Kwangwon Lee, Krister 

Gumaelius, Jimmy Franchi, Fredrik Allerstam, Fairchild Semiconductor, 

SE ; James Victory, Mehrdad Baghaie Yazdi, 

Thomas Neyer, Fairchild Semiconductor, D 

14:00 

Enhancing Power Density and Efficiency of Variable 

Speed Drives with 1200V SiC-TMOSFETs 

Benjamin Sahan, Anastasia Brodt, Daniel Heer, Ulrich 

Schwarzer, Maximilian Slawinski, Tim Villbusch, Klaus Vogel, 

Infineon Technologies, D 

14:30 

Air Cooled SiC Three Level Inverter 

with High Power Density for Industrial 

Applications 

Alexander Hensler, Thomas Bigl, Stephan 

Neugebauer, Stefan Pfefferlein, Siemens, D 

15:00 

Generic Approach for Design, Configuration and Control of 

Modular Converters 

Lyubomir Kerachev, CMP, F; Yves Lembeye, Jean-Christophe 

Crebier, G2Elab, F 

14:00 

IGBT Gate Driver with Accurate 

Measurement of Junction Temperature 

and Inverter Output Current 

Marco Denk, Mark-M. Bakran, University of 

Bayreuth, D 

14:30 

An Inverted Rogowski Coil: A High Speed, Wide-Band, 

Compact Current Transducer With High Immunity to 

Voltage Transients 

Chris Hewson, Pemuk, GB 

15:00 

Design of a 300 Amps Pulsed Current 

Source with Slopes up to 27 Amps per 

Nanosecond for Current Probe Analysis 

Nathan Tröster, Dennis Bura, Julian Wölfle, 

Martin Stempfle, Jörg Roth-Stielow, University 

of Stuttgart, D 

14:00 

A 70 kW Next Generation Three-phase Solar Inverter 

with Multiple MPPTs using Advanced Cooling Concept 

and Stacked-PCB Architecture 

Remi Freiche, Sebastian Franz, Stephan Liese, Marc Fink, 

Fraunhofer Institute ISE, D 

14:30 

Enhanced Current Control Scheme for Large-Scale Solar 

Inverters 

Tomomichi Ito, Hitachi, J 

15:00 

Improved Bias Supply Scheme for a Maximum Power 

Point Tracking Universal Topology for Low-Voltage Electromagnetic 

Harvesters in Battery Powered Applications 

Mahmoud Shousha, Dragan Dinulovic, Martin Haug, Würth 

Elektronik eiSos, D 

14:00 

A New Configuration for a Grid Former Converter in AC 

Isolated Microgrid 

Hélio Antunes, Sidelmo Silva, Braz Filho, Reginaldo Ferreira, 

Danilo Iglesias Brandão, Federal University of Minas 

Gerais, BR 

14:30 

Design and Control of a DC Grid for Railway Stations 

Sabah Siad, Gilney Damm, Paris Saclay University, F; Lilia 

Galai Dol, Alexandre de Bernardinis, EFFICACITY, F 

15:00 

Distributed Nonlinear Control for a MicroGrid Embedding 

Renewables, Train’s Energy Recovery System and 

Storages 

Alessio Iovine, Lilia Galai Dol, EFFICACITY, F; Elena De Santis, 

Marika Di Benedetto, L’Aquila University, I;; Gilney 

Damm, Paris Saclay University, F 

15:30 

Reliability Enhancement of Modular Smart Transformers 

by Uneven Loading of Cells 

Vivek Raveendran, Markus Andresen, Levy Ferreira Costa, 

Giampaolo Buticchi, Marco Liserre, University of Kiel, D 


15:30 – 17:30 Foyer Ground Floor Entrance NCC Mitte Poster/Dialogue Session 


26 

27 

Conference Tuesday, 16 May 2017, Poster Dialogue Sessions 

15:30 – 17:30, Foyer Ground Floor Entrance NCC Mitte 

Advanced Si Power Semiconductors 

Chairperson: Stefan Linder,Alpiq, CH 

PP001 A Scaled PIN Diode SPICE Model for Power System 

Optimization 

Mehrdad Baghaie Yazdi, James Victory, Kangwei Mao, 

Fairchild Semiconductor, D; Dongsoo Kim, Fairchild 

Korea, ROK 

PP002 Diode Parameters Design Simulation and Experi 

mental Validation against Silver Migration Phenomena 

in High Voltage Switching Application 

Mattia Gianfranco Gentile, Ettore Vittone, University of 

Turin, I; Paolo Mirone, University of Naples Federico II, 

I; Luigi Merlin, Vishay Intertechnology, I 

PP003 Reliability Improving of Power Semiconductor Discharge 

Switch by Means of LTJT Technology 

Alexey Grishanin, Valentin A. Martynenko, Alexey Khapugin, 

Mikhail Malygin, Oleg Frolov, JSC Electrovipryamitel, 

RU; Konstantin Nishchev, Mikhail 

Novopoltsev, Ogarev Mordovia State University, RU 

PP004 New Generation Large Area Thyristor for UHVDC 

Transmission 

Jan Vobecky, Karlheinz Stiegler, Marco Bellini, Urban 

Meier, ABB Switzerland, CH 

PP005 The Next Generation 4500V / 3000A BIGT Stakpak 

Modules 

Franc Dugal, Andreas Baschnagel, Munaf Rahimo, Arnost 

Kopta, ABB Switzerland, CH 

PP006 The New ST Super-Junction Technology with Fast 

Intrinsic Diode Ideal for the Most Demanding High 

Efficiency Bridge Topologies and ZVS Phase-Shift 

Converters- Comparison Analysis in 2kW AC-DC 

Switch Mode Power Supply 

Antonino Gaito, Alfio Scuto, Cristiano Gianluca Stella, 

Giuseppe Sorrentino, STMicroelectronics, I 

PP007 Low Voltage AC/DC Over-Current Breaker with 650-V 

IGBTs 

Jan Fuhrmann, David Hammes, Hans-Günter Eckel, 

University of Rostock, D 

PP008 An Advanced Si-IGBT Chip for Delivering Maximum 

Overall System Performance 

Narender Lakshmanan, Thomas Radke, Mitsubishi 

Electric Europe, D 

PP009 High Energy Harvesting in High Current/Voltage 

Induction Heating Application Using the new Ultra 

Filed Stop IGBTs Technology 

Vittorio Crisafulli, ON Semiconductor, D; Leon Zhang, 

ON Semiconductor, CN 

PP010 An Automated Testbench for the Measurement of 

Si-IGBT and SiC-MOSFET Hybrid Switches 

Michael Meissner, Sebastian Fahlbusch, Klaus F. Hoffmann, 

Helmut Schmidt University- University of the 

Federal Armed Forces Hamburg, D 

PP011 New-Generation Trench Schottky Rectifiers (TSR) 

with Superior Electrical Performance 

Ju-Hsu Chuang, Wesley Chih-Wei Hsu, Jia-Jan Guo, 

Yu-Hung Chang, Sung-Yin Wu, Lite-on Semiconductor, 

TW, D 

Wide Bandgap Devices I 

Chairperson: Thomas Neyer, 

Fairchild Semiconductor, D 

PP012 Measurement Scheme to Model an SiC MOSFET 

for Simulating its Switching Behaviors 

Tatsuya Yanagi, Hiroyuki Sakairi, Hirotaka Otake, 

Naotaka Kuroda, Ken Nakahara, ROHM, J; Hiroaki 

Tanigawa, Keysight Technologies, J 

PP013 A Performance Comparison of SiC Power Modules 

with Schottky and Body Diodes 

Christopher Schmidt, Martin Röblitz, SEMIKRON 

Elektronik, D 

PP014 Comparison between 1200V 5th generation SiC 

MPS Diode and Silicon Power Diode in DC/AC Hybrid 

Circuit Breaker 

Kenan Askan, Michael Bartonek, Eaton Industries, AT; 

Fabio Brucchi, Infineon Technologies, 

PP015 Impact of Dynamic On-Resistance of High Voltage 

GaN Switches on the Overall Conduction Losses 

Eduardo de Oliveira, Christian Nöding, Peter Zacharias, 

University of Kassel, D 

PP016 Calorimetric Measurement of Wide Bandgap 

Semiconductors Switching Losses 

Sven Bolte, Norbert Fröhleke, Joachim Böcker, University 

of Paderborn, D 

PP017 System Level Comparison of Si IGBTs and SiC 

MOSFETs 

Levi Gant, Sujit Banerjee, Xuning Zhang, Gin Sheh, 

Monolith Semiconductor, USA; Andrew Lemmon, Ali 

Shahabi, The University of Alabama, USA 

PP018 Comparison of the Short Circuit Capability of Planar 

and Trench SiC MOSFETs 

Douglas Pappis, Lucas de Menezes, Peter Zacharias, 

University of Kassel, D 

PP019 Characterization and Optimization of SiC Freewheeling 

Diode for Switching Losses Minimization Over 

Wide Temperature Range 

Xuning Zhang, Levi Gant, Gin Sheh, Sujit Banerjee, 

Monolith Semiconductor, USA 

PP020 On Developing a dV/dt Rating for Commercial 

650V- and 1200V-Rated SiC Schottky Diodes 

Thomas Barbieri, Gang-Yao Wang, Edward Van Brunt, 

Brett Hull, Jim Richmond, John Palmour, Wolfspeed, USA 

PP021 SiC power MOSFET with Monolithically Integrated 

Schottky Barrier Diode for Improved Switching Performances 

Huaping Jiang, Xiaoping Dai, Maolong Ke, Dynex Semiconductor, 

GB 

PP022 Dual On-State Gate Driver Concept for Improved 

Drive of Silicon Carbide MOSFETs 

Sebastian Fahlbusch, Fabian Fisahn, Michael Meissner, 

Ulf Müter, Sebastian Klötzer, Klaus F. Hoffmann, 

Helmut Schmidt University- University of the Federal 

Armed Forces Hamburg, D 

PP023 High Speed, Thermally Enhanced, Small Footprint 

SiC Power Modules for Cost Sensitive Applications 

Adam Barkley, Scott Alan, Marcelo Schupbach, 

Wolfspeed, USA 

Power Modules 

Chairperson: Hans Ertl, 

Vienna University of Technology, A 

PP024 A Power Cycling Test Bench Dedicated to the Test of 

Power Modules in a Large Range of Cycling Frequency 

Jean-Jacques Huselstein, Francois Forest, Guillaume 

Pellecuer, University of Montpellier, F; Serge Bontemps, 

Microsemi PMP, F 

PP025 Resin Flow Simulation for Transfer Molding Technology 

Ken Sakamoto, Yutaro Hanawa, Mitsubishi Electric Corporation, 

J 

PP026 Development of High Thermal Performance Automotive 

Power Modules with Dual Sided Cooling Capability 

Yangang Wang, Steve Jones, Xiaoping Dai, Dynex Semiconductor, 

GB 

PP027 Intelligent Power Modules with Common Footprint for 

Both Single-Phase and Three-Phase AC Input Power 

Jonathan Harper, ON Semiconductor, D 

PP028 Optimized Layout of 1700V LoPak1 IGBT Power Module 

by Holistic Design Approach 

Sven Matthias, Samuel Hartmann, Athanasios Mesemanolis, 

Raffael Schnell, ABB Switzerland, CH 

PP029 Paralleling of LinPak Power Modules 

Andreas Baschnagel, Daniel Prindle, Silvan Geissmann, 

Fabian Fischer, Samuel Hartmann, Raffael Schnell, 

Gontran Pâques, Arnost Kopta, ABB Switzerland, CH 

PP030 A New Generation of 600V Smart Power Module for 

Motor Drive Applications 

Bumseung Jin, Samuell Shin, HyunSoo Bae, Taesung 

Kwon, Fairchild Korea Semiconductor, ROK 

PP031 Super Mini DIPIPM for Automobile 

Naoki Ikeda, Hiroyuki Hata, Hongbo Zhang, Mitsubishi 

Electric Corporation, J 

Cooling Systems 

Chairperson: Masahito Otsuki, 

Fuji Electric, J 

PP032 Thermal Characterization Analysis of IGBT Power 

Module Integrated with a Vapour Chamber and 

Pin- Fin Heat Sink 

Yiyi Chen, Bo Li, Yuying Yan, University of Nottingham, 

GB; Fang Qi, Yangang Wang, Steve Jones, Dynex 

Semiconductor, GB 

PP033 Silicone-Based Enablers for Thermal Management in 


Thomas Seldrum, Dow Corning Europe, BE 

PP034 Innovative Design in IGBT Cold Plate 

Chihwei Wei, Kevin Wu, Larry Lin, Amulaire Thermal 

Technology, TW 

PP035 Reliability of the Direct Cooling Type Cold Plate with 

Ni Clad Layer 

Kazuhiko Minami, Atsushi Otaki, Ichiro Ota, Showa 

Denko, J 

PP036 Testing, Selecting, and Applying Metallic Thermal 

Interface Materials for Harsh Environment Applications 

David Saums, DSA LLC, USA; Timothy Jensen, Indium 

Corporation, USA 

PP037 Two-Phase Liquid Cooling for Electric Vehicle IGBT 

Power Module Thermal Management 

Itxaso Aranzabal, Inigo Martinez de Alegria, Inigo 

Kortabarria, University of the Basque Country (UPV/ 

EHU), ES; Nicola Delmonte, Paolo Cova, University of 

Parma, I 

PP038 Evaluation of Leadframe Power Modules for Automotive 

Drive Applications 

Bao Ngoc An, Maurizio Kempf, Michael Meisser, Benjamin 

Leyrer, Thomas Blank, Marc Weber, Karlsruhe 

Institute of Technology (KIT), D; Johannes Kolb, 

Schaeffler Technologies, D 

PP039 Exploring Novel Second Level Cooling Methods for 

Low Profile IPMs 

Khatri Danish, Rajeev Krishna Vytla, Okawa Katsumi, 

Jin Pei, Infineon Technologies Americas, USA 

Reliability 

Chairperson: Serge Bontemps, 

Microsemi PMP Europe, F 

PP040 Inverter Power Module Lifetime Estimation for HEV 

and EV 

JeHwan Lee, HanGeun Jang, SangChul Shin, KiYoung 

Jang, JinHwan Jung, Hyundai Motors, ROK 

PP041 The Enhanced Reliability of the Double Sided 

Cooled Package with Integrated Internal Isolation 

Inpil Yoo, Marina Schmitz, Infineon Technologies, D 

PP042 Determination of State-of-Health and Remaining 

Lifetime of Power Modules 

Jörg Franke, Christian Herold, Josef Lutz, Lukas 

Tinschert, Technical University Chemnitz, D 

PP043 Shoot Through and Avalanche Behavior of High 

Speed Fet Converter 

Florian Kapaun, Rainer Marquardt, Christopher Dahmen, 

University of the Federal Armed Forces Munich, D 

PP044 Reliability Investigation of SiC Based Diode and 

MOSFET Modules Developed for High Power Conversion 

Alexander Otto, Rainer Dudek, Sven Rzepka, Fraunhofer-Institute 

ENAS, D; Mohamad Abo Ras, Tobias 

von Essen, Berliner Nanotest & Design, D; Markus 

Bast, FuE-Zentrum FH Kiel, D; Ulf Müter, Helmut- 

Schmidt University, D; Arne Lunding, Philips Medical 

Systems, D 

PP045 Mission Profile Based Reliability Evaluation of 

Building Blocks for Modular Power Converters 

Frederik Hahn, Markus Andresen, Giampaolo Buticchi, 

Marco Liserre, Christian-Albrechts-University, D 

PP046 Thermal Calculation Methodology for Lifetime Estimation 

of Semiconductor Devices in MMC Application 

Yijun 

Yijun Ye, Josef Lutz, Guang Zeng, Technical University 

of Chemnitz, D; Rodrigo Alvarez, Pablo Correa, Siemens, D 

Thermal Management and Packaging I 

Chairperson: J. A. Ferreira, 

Delft University of Technology, NL 

PP047 In-Situ Transient Testing of Run-in and Degradtion 

Effects of Thermal Interface Sheets in Power 

Switch Assemblies 

Gabor Farkas, Zoltan Sarkany, Attila Szel, Mentor 

Graphics, HU 

PP048 Material Design and Process Conditions of Presureless 

Sintered Silver for 200/-40 ºC Thermal 

Cycling Reliability 

Masafumi Takesue, Tomofumi Watanabe, Naoya 

Nakajima, Bando Chemical Industries, J 

PP049 Performance Comparison of fast Silicon and Silicon 

Carbide Devices Used with Conventional PCBs and 

Embedded Into PCBs 

Peter Zacharias, Juliane Hinze, University of Kassel, D 

PP050 Power Electronic Package for Double Sided Cooling 

Utilizing Tile-Level Assembly 

Maximilian Schmid, Gordon Elger, Johannes Pforr, 

Technical University of Applied Sciences Ingolstadt, D 

PP051 Packaging Solutions for Mitigating IGBT Short- 

Circuit Instabilities 

Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg, 

Aalborg University, DK 

PP052 Thermo-Mechanical Optimisation of Press Pack 

IGBT Packaging Using Finite Element Method 

Simulation 

Michael Varley, Ashley Plumpton, Dynex Semiconductor, GB 

PP053 Thermal Impedance Matrix Characterization of Co- 

Packed Discrete IGBT and Diode 

Alberto Salinaro, Fairchild Semiconductor, D; Hans- 

Peter Hoenes, ON Semiconductor, D 

PP054 The Influence of Y Doped ZrO2 Particles for High- 

Strength AlN Ceramics 

Jong Seol Yoon, Ki Soo Jun, Kyong Hwan Kim, KCC 

Corporation, ROK 

PP055 HT Lead-free and Sinter Materials for WBG Power 

Semiconductors 

Minoru Ueshima, Tetsu Takemasa, Senju Metal Industry, 

J; Shijo Nagao, Katsuaki Suganuma, Osaka University, 

J 

PP056 Passive and Active Two-Phase Cooling for Power 

Electronics Applications 

Devin Pellicone, Advanced Cooling Technologies, USA 

PP057 Feasibility Study, Combining High-Power MOSFETs 

in a Power Module Using Advanced Thermal 

Management 

Martin Schulz, Maximilian Slawinski, Infineon Technologies, 

D 

DC-DC Converters 

Chairperson: Werner Berns, 

Texas Instruments, D 

PP058 Hybrib Power Converter Using Si IGBT Power 

Module & SiC MOSFET 

Benoit Peron, Joseph Magniez, Centum Adetel, F 

PP059 Application of a Buck-Boost Converter for Highly 

Dynamic Power Smoothing in Industrial Applications 

Jochen Staiger, Swen Bosch, Heinrich Steinhart, HTW 

Aalen, D 

PP060 High Power Density GaN Interleaved Bidirectional 

Boost Converter with Extended Cooling Capability 

Konstantin Siebke, Thorben Schobre, Niklas Langmaack, 

Regine Mallwitz, Technical University Braunschweig, 

D 

PP061 Single-Ended Boost DC-DC Converter Cascade 

System for High Boost Rate and High Efficiency in 

Residential Fuel-Cell System 

Ryoga Kiguchi, Yasuyuki, Nishida, Chiba Institute of 

Technology, J 

PP062 An Isolated Bidirectional DC-DC Converter for Energy 

Storage Systems 

Mofakkharul Islam, Bebro Electronic, D 

PP063 Modeling of ZVS DC-DC Converter for Charging and 

Voltage Balancing of Energy Storage Elements 

Dimitar Arnaudov, Nikolay Hinov, George Kraev, Gergana 

Vacheva, Technical University of Sofia, BG 

PP064 Modeling of Multiphase Converter for Charging of 

Energy Storage Elements 

Stoyan Vuchev, Dimitar Arnaudov, Nikolay Hinov, Ivan 

Nedyalkov, Technical University of Sofia, BG 

PP065 Advanced Power Converters for Energy Storage 

Systems for Light Traction Vehicles 

Miroslav Hruška, Skoda Electric, CZ; Martin Schulz, 


PP066 Compact Diode-Less Bidirectional GaN Based Buck 

Converter for Mobile DC-DC Applications 

Sebastian Klötzer, Ulf Müter, Sebastian Fahlbusch, 

Klaus F. Hoffmann, Helmut Schmidt University- 

University of the Federal Armed Forces Hamburg, D 

PP067 High-Voltage Gain DC-DC Boost Converter with 

Interleaved Inductors for a PV System to Supply 

Data Centers 

Fernando Luiz Marcelo Antunes, Katiuscia Lopes dos 

Santos, Federal University of Ceara, BR 

PP068 Seven Reasons why Power Designers Should Implement 

48V to 1V Direct Conversion 

Bob Cantrell, Ericsson Power Modules, SE 

PP069 Inductor Current Mapping Analog Controllers for 

Power Inverters and DC/DC Converters 

Alexei Nikitin, Avatekh, USA; Ruslan L. Davidchack, 

University of Leicester, GB

28 

29 

Conference Tuesday, 16 May 2017, Poster Dialogue Sessions 


Power Converters for Efficiency and 

Renewable Energy 

Passive Components and New Materials 

Sensors, Metering, Diagnostics 

Chairperson: Mike Meinhardt, 

SMA Solar Technology, D 

PP070 Analysis of a Novel Buck-Buck Single Stage 

LED-Ballast 

Alexander Pawellek, Thomas Dürbaum, Friedrich-Alexander-University 

Erlangen, D 

PP071 Energy Efficient, GHz Excited Plasma Lighting 

System 

Kamil Kompa, Slawomir Niespodziany, KOMPA Sp. z 

o.o, PL 

PP072 Constant-Current Paralleling Controller fo 

Mid-Power LED 

Michael Heidinger, Christoph Simon, Fabian Denk, 

Wolfgang Heering, Rainer Kling, Karlsruhe Institute of 

Technology (KIT), D 

PP073 A Novel Mains Operated LED Driver Using a GaN 

AC Switch 

Dominique Bergogne, CEA-Léti, F 

PP074 Electronic Ballast for Gas Discharge Lamp Based 

on Input- Series Output- Series Resonant Converter 

Kaspars Kroics, Riga Technical University, LV 

PP075 Control Loop Design for Closed-Loop Class-D Amplifiers 

with 4th Order Output Filter 

Franz Maislinger, Hans Ertl, Technical University of 

Vienna, AT; Goran Stojcic, Florian Holzner, Bernecker + 

Rainer Industrie-Elektronik, AT 

PP076 Novel Gate Driver Technology for the Series 

Connection of Power Semiconductors 

Johannes Kemper, Hako, D; Boris Fiedler, Max Planck 

Institute for the Structure and Dynamics of Matter, D; 

Klaus F. Hoffmann, Helmut-Schmidt University, D 

PP077 Redundant Operation Mode of the Three-Level 

Advanced-Active-Neutral-Point-Clamped Converter 

for Wind Energy Application 

David Hammes, Sidney Gierschner, Hans-Günter Eckel, 


PP078 Implementation of Extended Kalman Filter for 

PMSG Considering the Dynamics of the Mechanical 

System 

Mohamed Abdelrahem, Christoph Hackl, Ralph Kennel, 


PP079 Evolution of Bidirectional Power Architectures 

David Bourner, Vicor Corporation, USA 

PP080 Modular and Compact 1 MW Inverter in One 19 Inch 

Rack for Storage and PV 

Patrick Hercegfi, Stefan Schönberger, Fraunhofer Institute 

ISE, D 

PP081 A New Step Towards the Power Electronics Design 

Automation 

Lyubomir Kerachev, CMP, F; Yves Lembeye, Jean- 

Christophe Crebier, G2Elab, F 

Chairperson: Klaus Marahrens, 

SEW-EURODRIVE GmbH, D 

PP082 Comprehensive AC Performance Analysis of 

Ceramic Capacitors for DC Link usage 

Kirill Klein, Eckart Hoene, Klaus-Dieter Lang, Frauhofer-Institute 

IZM, D 

PP083 High Performance DC Link Capacitor/Bus Sourcing 

Dual Infineon HybridPACKTM Drive Inverters for EV 

Applications 

Michael A. Brubaker, Terry Hosking, Wayne Liu, SBE, 

USA; Tomas Reiter, Infineon Technologies, D; Carsten 

Wüst, David Kuschnarew, hofer eds GmbH, D 

PP084 An Evaluation Circuits for DC-Link Capacitors Used 

in a Single-Phase PWM Inverter 

Kazunori Hasegawa, Ichiro Omura, Shin-ichi Nishizawa, 

Kyushu Institute of Technology / National Institute of 

AIST, J 

PP085 IGBT Switching Behavior With Parallel Surge Arrester 

For Medium Voltage Applictation 

Fabian Hohmann, Mark-M. Bakran, University of 

Bayreuth, D 

PP086 Using Powder Materials to Replace Air-Gaps for 

Fringing Flux Reduction 

Paul Winkler, Wulf Günther, Acal BFi Germany, D 

PP087 Partial Discharge of Inductives in a High Frequency 

Application 

Herbert Jungwirth, Michael Schmidhuber, SUMIDA 

Components Modules, D 

PP088 Design of Inductive Components for Triangular 

Current Mode (TCM) Inverters up to 500 kW 

Tobias Appel, Spezial-Transformatoren-Stockach, D; Jan 

Fuhrmann, Hans-Günter Eckel, University of Rostock, D 

PP089 Study of the Influence of an Air Gap on Dimensional 

Resonance in MnZn-Ferrite Cores 

Wolfgang Hauser, Manfred Albach, Friedrich-Alexander-University 

Erlangen, D 

PP090 A Novel Approach to Calculate the Reluctance of 

Air-Gaps in Ferrite Cores 

Erika Stenglein, Manfred Albach, Friedrich-Alexander-University 

Erlangen, D 

PP091 Inductive Components for Solar Power Conversion 

in a Harsh Next Decade Environment 

Michael Schmidhuber, SUMIDA Components Modules, 

D; Marco Jung, Fraunhofer Institute IWES, D 

PP092 Systemsimulations with EMI-Filter in an Automotive 

HighVolt Environment 

Stefan Schefler, Stefan Weber, EPCOS, D; Christoph 

Keller, Robert Bosch, D 

Chairperson: Philip C. Kjaer, 

Vestas Wind Systems, DK 

PP093 Current Measurement Device for High and Fast 

Changing Currents 

Felix Himmelstoss, Karl Edelmoser, Technikum Vienna, 

AT 

PP094 Measurement of Current and Magnetic Field in a 

Power Electronic Building Block using Coupled 

Inductors 

Patrick Deck, Christian Peter Dick, Jan Hannig, TH 

Köln, D 

PP095 Comparative Analysis of the Measurement Techniques 

to Characterize SiC-Power-Modules 

Zhiyu Cao, Christian Schulte-Overbeck, AEG Power 

Solutions, D 

PP096 An Open-Loop Hall-Cell Based Current Transducer 

with an Integrated Sigma-Delta Modulator 

Fabrice Salvi, David Jobling, Pierre Turpin, LEM Switzerland, 

CH 

PP097 Magnetoresistive Sensors for Angle, Position and 

Speed Measurement in Small-and Micro-actuators 

Rolf Slatter, Rene Buß, Sensitec, D 

PP098 Insulation Health State Monitoring of Traction 

Machines Based on Online Switching Transien 

Exploitation 

Markus A. Vogelsberger, Bombardier Transportation 

Austria, AT; Clemens Zoeller, Thomas M. Wolbank, 

Hans Ertl, Technical University of Vienna, AT 

PP099 Comparison of Fundamental Active and Reactive 

Power Determination Methods in Single- Phase 

Systems 

Swen Bosch, Heinrich Steinhart, HTW Aalen, D 

PP100 Practical Experience with EMI of Radio-Communication 

System Versus Power Electronics Based on 

the SiC 

Jan Leuchter, University of Defence, CZ

30 

31 

Conference Wednesday, 17 May 2017 


08:45 Room Brüssel 1 KEYNOTE:The Smart Future of Power Electronics and its Applications, Hans Krattenmacher, SEW-Eurodrive, D 



Power Converters with Wide Bandgap 

Devices II 


IGBT 


Module Design 


Control Techniques in Intelligent Motion 

Systems 

Room Mailand 


Passive Components 

Chairperson: Ulrich Kirchenberger, 

STMicroelectronics, D 

Chairperson: Katsuaki Saito, 

Hitachi Europe, GB 

Chairperson: Peter Kanschat, 


Chairperson: Walter Schumacher,Braunschweig 

University of Technology, D 

10:00 

800 V Three-Phase LLC Series Resonant DC/DC Converter 

Using SiC MOSFETs 

Yusuke Nakakohara, Hirotaka Otake, Ken Nakahara, 

ROHM, J; Tomohiko Yoshida, Mamoru Tsuruya, Power 

Assist Technology, J 

10:30 

The Destructive Energy Hidden in Supply Lines 

Roland Kratz, Würth Elektronik, D 

11:00 

Optimization of a DCDC Dual Active 

Bridge Converter for Aircraft Application 

Maximin Blanc, Yves Lembeye, Jean-Paul 

Ferrieux, G2Elab, F; Corentin Rizet, Sirepe, 

F; Arnaud Mahe, Taoufik Bensalah, Thales 

AES, F 

11:30 

Highly Integrated Silicon Carbide 80 kW Resonant Inverter 

for High Voltage Generation Switching at 500 

kHz 

Ulf Müter, Klaus F. Hoffmann, Helmut Schmidt University 

- University of the Federal Armed Forces Hamburg, D; 

Arne Lunding, Bernhard Wagner, Philips Medical Systems, 

D 

10:00 

Dual Side-Gate HiGT Breaking Through the Limitation 

of IGBT Loss Reduction 

Tomoyuki Miyoshi, Yujiro Takeuchi, Tomoyasu Furukawa, Masaki 

Shiraishi, and Mutsuhiro Mori, Hitachi, J 

10:30 

An Optimized Plug-In BIGT with No Requirements for 

Gate Control Adaptations 

Munaf Rahimo, Charalampos Papadopoulos, Chiara Corvasce, 

Arnost Kopta, ABB Switzerland, CH 

11:00 

Power Rating Extension with 7th Generation IGBT and 

Thermal Management by Newly Developed Package 

Technologies 

Kenichi Yoshida, Shinichi Yoshiwatari, Mutsumi Sawada, Yuichi 

Onozawa, Osamu Ikawa, Fuji Electric, J 

11:30 

The Next Generation High Power Modules with Enhanced 

Trench BIGT Technology 

Charalampos Papadopoulos, Munaf Rahimo, Chiara Corvasce, 

Maxi Andenna, Arnost Kopta, ABB Switzerland , CH 

12:00 

High Efficient and Soft IGBT Technology 

Suguru Hondo, Yu Enomoto, Yuta Kawamoto, Akihiro Hikasa, 

Kazuhide Ino, ROHM, J 

10:00 

A New Intelligent IGBT Module for 

Quasi-Resonant Inverter Applications 

Bum-Seok Suh, Wonjin Cho, Alpha and Omega Semiconductor, 

ROK 

10:30 

Relaxing Thermal Stress by SLC Technology 

and New PC-TIM 

Koichi Masuda, Yoshitaka Otsubo, Tomohiro Hieda, Mitsubishi 

Electric Corporation, J 

11:00 

Lifetime Estimation Model of HVIGBT Considering Humidity 

Yumie Kitajima, Kenji Hatori, Shinichi Iura, Keiichi Nakamura, 

Yasutaka Kusakabe, Kazuhiro Kurachi, Mitsubishi 

Electric Corporation, J; Eugen Wiesner, Mitsubishi Electric, 

D 

11:30 

Effects of Influencing the Individual Leg Inductance in 

Case of Paralleling Mo-dules on Basis of XHP 3 and 

EconoDUAL 

Matthias Wissen, Waleri Brekel, Daniel Domes, Infineon 

Technologies, D 

12:00 

Breakdown of Gate Oxide of SiC-MOSFETs and Si- 

IGBTs Under High Temperature and High Gate Voltage 

Menia Beier-Möbius, Josef Lutz, Technical University of 

Chemnitz, D 

10:00 

Harmonic Speed Control in Repetitive 

Mechanical Systems 

Van Trang Phung, Mario Pacas, University 

of Siegen, D 

10:30 

Hybrid Curent and Acceleration Control of Servo Drives 

Josef Wittmann, Rainer Hagl, University of 

Applied Sciences Rosenheim, D; Ralph 

Kennel, Technical University Munich, D 

11:00 

Analysis of Instantaneous Switching Frequency of a Hysteresis 

Based PWM for 

Control of Power Electronics 

Malte Thielmann, Axel Klein, Michael 

Homann, Walter Schumacher, Technical 

University of Braunschweig, D 

11:30 

Natural-Sampled, Quasi-Continuous and 

Synchronous Pulse Width Modulator Enables 

Field Oriented Control for High Speed 

Drives 

Jens Onno Krah, Markus Höltgen, Technical 

University Cologne, D; Christoph Klarenbach, 

Beckhoff Automation, D 

Chairperson: Petar J. Grbovic, Huawei Technologies, D 

and Wolfram Teppan, LEM Intellectual Property SA, CH 

10:00 

Estimating the Pulse Performance of 

Wirewound Power Resistors 

Bertram Schott, Vishay Electronic, D 

10:30 

Inductance versus DC Current Measurements on the 

Anhysteresis of Magnetic Material 

Jörn Schliewe, Stefan Schefler, Stefan Weber, Matthias 

Köppen, Achim Siersch, EPCOS, D 

11:00 

Experimental Evaluation of Capacitors 

for High Power Resonant Converters 

Petar J. Grbovic, Huawei Technologies, D; 

Miroslav Vasić, Jesús A. Oliver, Pedro Alou, 

Jose A. Cobos, University of Madrid, ES 

11:30 

Medium Frequency Transformer 

Design and Optimization 

Marko Mogorovic, Drazen Dujic, École 

Polytechnique Fédérale de Lausanne, CH 

12:00 – 14:00 Lunch Break 


32 

33 

Conference Wednesday, 17 May 2017 



SiC-Systems 


Power Electronics Optimization 


Cooling Thermal Management 


Metering and Diagnostics and Standards 

Room Mailand 

Passive Components and New Materials 

Chairperson: Peter Steimer, ABB 

Switzerland, CH 

Chairperson: Mark M. Bakran, University 

of Bayreuth, D 

Chairperson: Josef Lutz, Chemnitz 

University of Technology, D 

Chairperson: Enrique J. Dede, University 

of Valencia, E 

Chairperson: Eric Favre, IMI Precision 

Engineering, CH 

14:00 

A Novel Gate Drive Concept to Eliminate Parasitic 

Turn-on of SiC MOSFET in Low Inductance Power Modules 

Andreas März, Teresa Bertelshofer, Mark-M. Bakran, University 

of Bayreuth, D; Martin Helsper, Siemens, D 

14:30 

Evaluation of Current Measurement Accuracy 

for a Power Module with Integrated 

Shunt Resistors 

Matthias Spang, Niklas Hofstoetter, SE- 

MIKRON Elektronik, D 

15:00 

Optical Power Isolation Enables Novel 

IGBT and Sensor Applications 

Jan-Gustav Werthen, Mort Cohen, L2W Energy, 

USA 

14:00 

Development of a High Efficient MPPT 

for Space Applications Using GaN 

Power Transistors 

Cornelius Armbruster, Christian Schöner, 

Fraunhofer Institute ISE, D; Torben Schönbett, 

Alfons Klönne, Rainer Merz, University of Applied 

Sciences Karlsruhe, D 

14:30 

Parasitic Inductance Analysis of a Fast 

Switching 100 kW Full SiC Inverter 

Matthias Kegeleers, Julian Körner, Stefan Matlok, 

Maximilian Hofmann, Martin März, Fraunhofer 

Institute IISB, D 

15:00 

Design Method for the Minimization 

of CM Inductor Volume with Consideration 

of Core Saturation in EMI Filters 

Bilel Zaidi, Arnaud Videt, Nadir Idir, University 

of Lille (L2EP), F 

14:00 

Temperature Swing Issue, How a Passive 

Two-Phase Cooling Loop Can Improve 

the Power Electronic Lifetime 

Vincent Dupont, Cyrille Billet, Thomas 

Nicolle, CALYOS, BE 

14:30 

Real-Time Junction Temperature Estimation of Multichip 

Power Module Used in a Motor Drive 

Merouane Ouhab, Radoslava Mitova, 

Miao-Xin Wang, Schneider Electric, F; Zoubir Khatir, Ali 

Ibrahim, Jean-Pierre Ousten, IFSTTAR, F 

15:00 

A Double Side Cooled Electronic Power Module 

Jacques Favre, APSI3D, F; Jean-Michel Reynes, IRT Saint 

Exupery, F; Jean-Pierre Fradin, Claudia Cadile, Sébastien 

Sanchez, Dominique Elzo, ICAM, F; Emmanuel Marcault, 

CEA Tech, F 

14:00 

Monitoring of Current Balance in Parallel-connected 


Lorenzo Giuntini, GE Consumer & Industrial, 

CH 

14:30 

Online IGBT Temperature Measurement Method Using a 

Greybox Model 

Georg Pangalos, Malte Päsler, Holger Kapels, Fraunhofer 

Institute ISIT, D 

15:00 

Impact of Temperature Imbalance on Junction Temperature 

Identification for Multiple Chip Modules Using 

TSEPs 

Jose Ortiz Gonzalez, Olayiwola Alatise, Li Ran, Philip 

Mawby, University of Warwick, GB 

14:00 

Evolution of Magnetics in Power Electronics 

Applications and Facing the Challenges of 

Future Electronics Industry 

Kapila Warnakulasuriya, Andrea Polti, Murata 

Power Solutions, GB; Farhad Nabhani, Teesside 

University, GB 

14:30 

High Performance Common-Differential Mode Chokes for 

High Efficient EMI Filters 

Thiemo Kleeb, Juliane Hinze, Peter Zacharias, University of 

Kassel, D 

15:00 

Dimensioning and Testing Planar Inductors for High Frequency 

Operation 

Gérard Delette, CEA-Léti, F 


15:30 – 17:30 Foyer Poster/Dialogue Session 


34 

35 

Conference Wednesday, 17 May 2017, Poster Dialogue Sessions 


Wide Bandgap Devices II 

PP101 

PP102 

PP103 

PP104 

PP105 

PP106 

PP107 

Chairperson: Chris Rexer, 

ON Semiconductor, USA 

Short Circuit Capability of 650 V Normally Off GaN 

E-HEMT and MOSFET-HEMT Cascode 

Douglas Pappis, Kevin Göbel, Peter Zacharias, University 

of Kassel, D 

Advantages Using 650V SiC MOSFET in High 

Frequency DC-DC Converter 

Antonino Gaito, Giuseppe Sorrentino, STMicroelectronics, 

I 

Cross Conduction of GaN HFETs in Half-Bridge 

Converters 

Jan Böcker, Carsten Kuring, Sibylle Dieckerhoff, Technical 

University Berlin, D; Oliver Hilt, Joachim Würfl, 

FBH Ferdinand-Braun-Institute Berlin, D 

Design Rules for Paralleling of Silicon Carbide 

Power MOSFETs 

Salvatore La Mantia, STMicroelectronics Application, 

D; Luigi Abbatelli, Giuseppe Catalisano, Maurizio 

Melito, STMicroelectronics, I 

Influence of an Emitter Sense Pin on the Switching 

Behavior of SiC BJTs in Standard Discrete Housings 

Christian Bödeker, Melanie Adelmund, Nando Kaminski, 

University of Bremen, D; Ranbir Singh, GeneSiC 

Semiconductor, USA 

Designing Manufacturable and Reliable Printed 

Circuit Boards Employing Chip Scale eGaN® FETs 

Michael de Rooij, Alana Nakata, Efficient Power Conversion 

(EPC) Corporation, USA 

Impact of Circuit Carrier Technologies on 

MHz-switching of GaN Half-Bridge Circuits 

Norbert Seliger, Franz Stubenrauch, University of 

Applied Sciences Rosenheim, D; Christian Brendel, Dr. 

Johannes Heidenahain, D; Doris Schmitt-Landsiedel, 


Thermal Management and Packaging II 

PP108 

PP109 

Chairperson: Toshihisa Shimizu, Tokyo 

Metropolitan University, Japan 

MMC AlSiC as Alternative for Molybdenum in 

Power Press-Pack Semiconductor Design. Investigations 

of Electric Conductivity Properties of AlSiC 

Alexey Grishanin, Valentin A. Martynenko, Vyacheslav 

Eliseev, Anton Samoylov, JSC Electrovipryamitel, RU; 

Konstantin Nishchev, Mikhail Novopoltsev, Ogarev 

Mordovia State University, RU 

Sintered Ag Joints on Copper Lead Frame TO220 by 

Pressure Sintering Process with Improved Reliability 

and Bonding Strength 

Ly May Chew, Wolfgang Schmitt, Jens Nachreiner, 

Heraeus Deutschland, D 

PP110 

PP111 

PP112 

PP113 

PP114 

A New Alternative Non-Pressure Silver Sinter 

Process by Using IR 

Wolfgang Schmitt, Ly May Chew, Heraeus Germany, D 

High Reliability Large Area Substrate Solder Interconnect 

with Embedded Mesh Technique 

James Booth, Kim Evans, Xiaoping Dai, Michael Varley, 

Dynex Semiconductor, GB; Karthik Vijay, Indium 

Corporation, GB 

Transient Current Distribution with Paralleling Dies 

and Paralleling Half Bridges in Multichip Power 

Modules Measurement Scheme to Model an SiC 

MOSFET for Simulating its Switching Behaviors 

Helong Li, Wei Zhou, Daohui Li, Steve Jones, Xiaoping 

Dai, Dynex Semiconductor, GB 

Influence of the Power Semiconductor Packaging 

on the Failure Characteristic for Safety-Critical 

Applications 

Michael Gleißner, Mark-M. Bakran, University of 

Bayreuth, D; Hussein Khalid, Mitsubishi Electric Europe, D 

Double Side Sintered IGBT 650V/200A in a TO-247 

Package for Extreme Performance and Reliability 

Francois LeHenaff, Alpha Metals Lötsysteme, D; Gustavo 

Greca, Paul Salerno, Monnir Boureghda, Alpha 

Assembly Solutions, USA; Anna Lifton, Apha, NL; 

Jean Claude Harel, Renesas Electronics, USA; Weikun 

He, Mentor Graphics, GB 

Control of Power Electronic Converters 

Chairperson: Geraldo Nojima, Eaton 

Corporation, USA 

PP115 Reactive Power Operation of a Single Phase AC-AC 

DAB Converter 

Martin Jagau, Michael Patt, Technologienetzwerk Allgäu, 

D 

PP116 Use of FPGAs to Develop Energy-Saving DC-DC 

Control 

Ben Jeppesen, Intel FPGA, GB; Ge Gao, Imperial College 

London, GB 

PP117 Comparison of Three Model Based Junction Temperature 

Control Systems to Increase the Lifetime 

of IGBT-Power- Modules 

Maximilian Nitzsche, Julian Wölfle, Nathan Tröster, Martin 

Stempfle, Jörg Roth-Stielow, University of Stuttgart, D 

PP118 A New Modulation Technique to Control the 

Switching Losses for Single Phase Three-Level Active-Neutral-Point-Clamped-Inverters 

Johannes Ruthardt, Julian Wölfle, Matthias Zehelein, 

Jörg Roth-Stielow, University of Stuttgart, D 

PP119 Comparison of FPGA Based Control Strategies 

(DDSRF-PI vs. State-Space Control) for Grid Connected 

Inverters under Grid Disturbances 

Emanuel Mittwede, Johannes Kern, Stefan Schönberger, 

Benjamin Stickan, Fraunhofer Institute ISE, D 

PP120 STNRGPF01: A New Driver for Interleaved PFC 

Based on Mixed Signal Control 

Sebastiano Messina, Marco Torrisi STMicroelectronics, I 

PP121 Quasi-Constant Frequency Secondary Side Controlled 

Flyback Concept with Variable ON-Time 

Alexander Connaughton, Graz University of Technology, 

AT; Arash Pake Talei, Kin Kennith Leong, Infineon 

Technologies Austria AG, AT 

PP122 Sensorless Control of a Bridgeless PFC Using a Low 

Pass Filter Model and a Linear PR Controller 

Francisco Azcondo, Felipe López, Alberto Pigazo, Paula 

Lamo, University of Cantabria, ES 

PP123 Optimised Modulation of Five-Phase Open-End 

Winding Drive 

Ivan Zoric, Martin Jones, Liverpool John Moores University, 

GB; Milan Darijevic, Siemens AG, D 

PP124 Characterizing the Conducted EMI Performance of a 

Power Module Through Passive Measurement 

Yu Liu, Infineon Technologies, D; Sergey Kochetov, 

BMW, D; Thomas Smazinka, Fraunhofer Institute IISB, 

D; Andreas Lindemann, Otto-von-Guericke-University, D 

PP125 A New Approach for Digital Controlled Power Supplies 

Regarding Pulsed Plasma Nitriding Systems 

Lisa Franke, Lutz Zacharias, Mirko Bodach, Ringo Lehmann, 

Westsächsische Hochschule Zwickau, D; Andreas 

Böhm, Plasmanitriertechnik Dr. Böhm, D 

Power Supplies, Control and Drive 

Chairperson: Manfred Schlenk, Infineon 

Technologies, D 

PP126 Combination of Forward-Voltage Measurement and 

Short-Circuit Detection for High-Voltage IGBTs 

Patrick Münster, Daniel Lexow, Hans-Günter Eckel, University 

of Rostock, D 

PP127 Gate Driver IC for GaN GIT for High Slew Rate and 

Cross Conduction Protection 

Aaron Qingwei Cai, Arnel Carrera Herreria, Howard Ban 

How Sin, Panasonic Industrial Devices Semiconductor 

Asia, SG; Liter Siek, Nanyang Technological University, SG 

PP128 Gate Drivers For Medium Voltage Applications 

Pierre Lefranc, Sokchea Am, Benoit Sarrazin, Rachelle 

Hanna, David Frey, G2Elab, F 

PP129 Diode Effects Bring Liefetime Risks to Series Resistors 

Wolfgang Frank, Infineon Technologies, D 

PP130 FPGA Based Control of an Three Level Neutral Point 

Clamped Inverter 

Markus Schaefer, Martin Hofmann, Sebastian Raab, 

Ansgar Ackva, University of Applied Sciences Wuerzburg-Schweinfurt, 

D 

PP131 Investigation of Magnetical Coupler Immunity 

Against External High Frequency and Density Magnetic 

Field 

Bernhard Strzalkowski, Analog Devices, D 

PP132 1000 V/80 W Auxiliary Power Supply as a Demonstration 

Vehicle for Wide Bandgap Power Electronics 

System Design 

Mehrdad Baghaie Yazdi, Xiaomin Wu, Peter Haaf, Klaus 

Neumaier, Fairchild Semiconductor, D; Martin Domeij, 

Fairchild Semiconductor, SE 

PP133 Ultra Linear Switching Rectifiers (ULSRs) for High- 

Quality Regulated 3-Phase AC to DC Conversion 

Alexei Nikitin, Avatekh, USA; Arlie Stonestreet II, Ultra 

Electronics ICE, USA 

PP134 Start-Up Operation of Active Three-Phase Third Harmonic 

Injection Rectifiers 

Markus Makoschitz, AIT Austrian Institute of Technology, 

AT; Michael Hartmann, Schneider Electric, AT; 

Hans Ertl, Vienna University of Technology, AT 

PP135 State-of-the-Art GaN Power IC-based 150 W AC-DC 

Adapter 

Tom Ribarich, Stephen Oliver, Navitas Semiconductor, USA 

PP136 Which Should Be Chosen in Three-Phase Diode 

Rectifier, Single-Bridge or Double-Bridge? 

Ryu Kawakubo, Yasuyuki Nishida, Chiba Institute of 

Technology, J 

PP137 Digital Control of Active Resistance Emulation in 

Three Phase Rectifiers with Current Injection Principle 

Radoš Vreljakovic, Predrag Pejovic, School of Electrical 

Engineering, RS; Milan Darijevic, Siemens, D 

Power Inverters 

Chairperson: Silvio Colombi, General 

Electric, CH 

PP138 Noise Mitigation in HV Tests Sourced by A Static 

Frequency Converter by Means Of Changing PWM 

Signal’s Carrier Frequency 

Mazen Alzatari, Janusz Szczechowski, ABB, D 

PP139 Novel Active Ripple Filtering Schemes Used In 

Little Box Inverter 

Radoslava Mitova, Miao-Xin Wang, Schneider Electric, 

F; Rajesh Ghosh, Mudiyula Srikanth, Schneider Electric, 

IN; Damir Klikic, Schneider Electric, USA 

PP140 Experimental Study of Si- and SiC-Based Voltage 

Source 

Klaus Sobe, Fabio Brucchi, Infineon Technologies 

Austria, AT 

PP141 Double-Loop Controlled Grid-Connected Inverter 

Yury Skorokhod, Dimitriy Nitkin, Sergey Dyakin, 

Transconverter, RU; Sergey Volskiy, Moscow State 

Aviation Institute Technical University, RU 

PP142 Design and Realization of a 100kHz-100kW Series 

Resonant Inverter with SiC-MOSFETs Connected in 

Parallel for a High Frequency Induction Heating 

Application 

Yildiray Baskurt, Dokuz Eylul Universitesi, TK 

PP143 AC-Sweep Analysis and Verification of an AC 

Power Source with Virtual Output Impedance for 

Validation of Grid Connected Components 

Peter Jonke, Markus Makoschitz, Johannes Stöckl, AIT 

Austrian Institute of Technology, AT; Hans Ertl, Vienna 

University of Technology, AT 

PP144 Technological Possibilities of New Silicon-Carbide 

Mosfets in Power-Inverter for the Inductive Energy 

Transfer 

Martin Warkentin, Faical Turki, Thomas Vosshagen, 

Paul Vahle, D 

PP145 Five-Level Cascaded Flying-Capacitor Converter 

Sidney Gierschner, David Hammes, Hans-Günter Eckel, 

University of Rostock, D; Max Beuermann, Siemens, D 

PP146 Safe IGBT Turn Off In Three-Level Neutral Point 

Clamped Type 2 (NPC2) Topology During the 

Special Case of Short Circuit at 1000V DC Voltage 

Vladan Jerinic, Reiner Hinken, Danfoss Silicon Power, 

D; Kevin Lenz, Power Integrations, D 

PP147 A Generalized Approach to the Analysis and Control 

of Modular Multilevel Converters 

Patrick Himmelmann, Marc Hiller, Karlsruhe Institute of 

Technology (KIT), D 

PP148 On Energy Balancing for a Full-Bridge MMC with 

Distributed Energy Storage Devices 

Gerrit Henke, Mark-M. Bakran, University of Bayreuth, D 

PP149 Comparison and Evaluation of Modular Multilevel 

Converter Topologies for Li-Ion Battery Systems 

Matthias Luh, Thomas Blank, Marc Weber, Karlsruhe 

Institute of Technology (KIT), D 

Improved Efficiency Power Converters 

Chairperson: Jacques Laeuffer, 

Dtalents, F 

PP150 Progress of High Power Multilevel Converters: 

Combining Silicon And Silicon Carbide 

Christopher Dahmen, Rainer Marquardt, University of 

the Federal Armed Forces Munich, D 

PP151 Direct Torque Control with Variable Level Discretization 

for Automotive Drives 

Eduard Specht, Stefan Goetz, Christoph Aschauer, 

Christian Korte, Porsche Engineering Group, D 

PP152 Analysis and Modeling of Efficiency Curve Dip in 

VRM with Low Output Inductance 

Ann Starks, Zhiyang Chen, ON Semiconductor, USA 

PP153 EMI Considerations on MHz Inverters 

Christoph Simon, Fabian Denk, Michael Heidinger, 

Karlsruhe Institute of Technology (KIT), D 

PP154 Analysis of the Impact of Silicon Carbide Modules 

in Wind and Traction Applications 

Itziar Kortazar, David Ortega, Igor Larrazabal, Ingeteam, 

ES; Mrinal Das, Wolfspeed, USA 

PP155 High Efficiency LLC Based AC-DC Converter for 

Wide Load Voltage Range 

Navid Daniali, Syed Inam Ul Murtaza Shah, Euro 

Engineering, D 

PP156 A Novel Approach to Reduce Losses in Boost PFC 

Stage of a 90W-Adapter 

Eva Schmidt, Daniel Kübrich, Thomas Dürbaum, 

Friedrich-Alexander-University Erlangen, D 

PP157 How the heck do I Measure a Gate Drive Slewing 

at 70kV/Us? 

Bart Schroder, Cleverscope, NZ 

PP158 Thyristor Rectifier for Permanent Magnet Wind 

Generators 

Philip C. Kjaer, Ionut Trintis, Morten Risskov Knudsen, 

Stig Lund Pallesgaard, Vestas Wind systems A/S, DK; 

Peter Mongeau, Vestas Wind Systems, USA 

PP159 Evaluation of an Isolated DC-DC Converter 

Naoki Koike, Shinichiro Nagai, Pony Electric, J; Hiroki 

Watanabe, Jun-ichi Itoh, Nagaoka University of Technology, 

J 

PP160 STMicroelectronics’s Super-Junction and Ultra- 

FAST MOSFET vs IGBT Technologies in Low Power 

Motor Drives 

Carmelo Parisi, Gaetano Belverde, Alessio Corsaro, 

STMicroelectronics, I 

PP161 Active Switch Impact on CCM Totem-Pole PFC 

Efficiency 

Matt OGrady, Ke Zhu, Jonathan Dodge, United Silicon 

Carbide, USA 

PP162 Dc Bus In Industry A New Way Towards Energy 

Efficiency 

Fernando Luiz Marcelo Antunes, Andre dos Santos 

Lima, Antonio Alisson Alencar Freitas, Aderaldo 

Racarte Guedes, Edilson Meneiro Sá Jr. Federal University 

of Ceara, BR 

Automotive, Traction and Aerospace 

Chairperson: Martin März, Fraunhofer 

Institute IISB, D 

PP163 The Highest Power Density IGBT Module in the 

World for xEV Power Train 

Akihiro Osawa, Keiichi Higuchi, Akio Kitamura, Daisuke 

Inoue, Yoshikazu Takamiya, Souichi Yoshida, Hiromichi 

Gohara, Masahito Otsuki, Fuji Electric, J 

PP164 J1-Series Modules with Integrated Cooler for 

Electric and Hybrid Vehicles 

Tatsuya Kawase, Shinsuke Godo, Noburu Miyamoto, 

Kazuaki Hiyama, Mikio Ishihara, Yosuke Nakata, 

Mitsubishi Electric Corporation, J 

PP165 Power MOSFETs for Low Voltage and High Current 

Automotive Applications- 48V Bus Systems 

Rajagopalan Jagannathan, Marco Atzeri, Hans-Peter 

Hoenes, ON Semiconductor, D 

PP166 Electrothermal Stresses in SiC MOSFET and Si IGBT 

3L-NPC Converters for Motor Drive Applications 

Zarina Davletzhanova, Olayiwola Alatise, Roozbeh Bonyadi, 

Sylvia Konaklieva, Jose Ortiz Gonzalez, Li Ran, 

Philip Mawby, University of Warwick, GB 

PP167 High Efficiency and Ruggedness Intelligent IGBT 

Technology for EV/HEV 

Vittorio Crisafulli, ON Semiconductor, D 

PP168 Highly Integrated Power Unit Based on Double 

Sided Cooling IGBT Module 

Vincent Li, William Zhu, Dynex Semiconductor, GB 

PP169 Efficiency Increasing by a Variable DC Link Voltage 

in Combination with a Bang-Bang Controlled Inverter 

for an Automotive Application 

Magnus Böh, Andreas Lohner, TH Köln, D 

PP170 Magnetic Leakage Field Pattern of a 7kw Wireless 

Electric Charging System in Different Environments 

Leandro Percebon, Daniel Kuerschner, Qualcomm 

CDMA Technologies, 

PP171 Innovations for IGBT Based Power Modules in HEV 

Drivetrain Applications 

Thomas Geinzer, Martin Gleich, Alexander Schwarz, 


PP172 Estimation of the Losses in Si and SiC Power 

Modules for Automotive Application 

Dounia Oustad, Menouar Ameziani, Dominique 

Lhotellier, VEDECOM, F; Stéphane Lefebvre, Meckael 

Petit, ENS Cachan, F 

PP173 DC/DC-Converter with Optimised Power Density for 

Integration of Multifunctional Fuel Cell Systems in 

Modern Aircraft Application 

Mathias Warncke, Klaus F. Hoffmann, Sebastian Fahlbusch, 

Helmut Schmidt University- University of the 

Federal Armed Forces Hamburg, D

36 

37 

Conference Wednesday, 17 May 2017, Poster Dialogue Sessions 


Exhibitor Forum 

Hall 7 Booth 507 

High Perfomance Power Electronics 

Chairperson: Dehong Xu, Zhejiang 

University, CN 

PP174 Influence of Different Switching Frequencies and 

Modulation Techniques on IPMSM and Inverter 

Losses Optimizing the Overall Drive Train Efficiency 

Martin Stempfle, Yuying Han, Julian Wölfle, Nathan 

Tröster, Jörg Roth-Stielow, University of Stuttgart, D 

PP175 Finite Control Set Model Predictive Control of a 

PMSM Fed by a Multilevel Inverter 

Cristian Vargas, Simon Feuersänger, Mario Pacas, University 

of Siegen, D 

PP176 Current Control Delay Reduction for FPGA-Based 

Servodrive 

Lev Rassudov, Balkovoi Aleksandr, Moscow Power 

Engineering Institute, RU 

PP177 An Optimal Coreless Transformer Topology for 

Power Transfer 

Yohan Wanderoild, Romain Grezaud, Dominique 

Bergogne, Adrien Morel, CEA-Léti, F; Hubert Razik, 

Laboratoire Ampère, F 

PP178 Switching Loss Minimization Using Two-Configuration 

Predictive Control for a Thermo-Hydraulic 

Linear PMSG 

Daniel Bernet, Karlsruhe Institute of Technologie (KIT), D 

PP179 Energy Storage Battery Protection System with Externaly 

Triggered Melting Fuses 

Mitja Koprivsek, ETI, SL 

PP180 Software-Defined Battery Technology: Novel 

Approach to Battery Management 

Eric Macris, Maxim Integrated, USA 

PP181 Approach of Optimization of Power Leveling System 

Using Multi-energy Storage Devices 

Toshihiro Shimao, Koji Kato, Yoichi Ito, Sanken Electric, J 

PP182 Single-Phase PWM-Based Unity Power Factor 

Rectifier with Adaptive Predictive Current Control 

Swen Bosch, Jochen Staiger, Heinrich Steinhart, HTW 

Aalen, D 

PP183 1.5kW Digital Totem Pole PFC Design for Air- 

Conditioner and Performance Comparison Using 

IGBT, SiC and GaN 

Wei Wu, Infineon Technologies Americas, USA 

Software Tools and Applications 

Chairperson: Peter Zacharias, University 

of Kassel, D 

PP184 Design of Test-system for EMC Investigations of 

Systems with Magnetron 

Jan Leuchter, Quang Huy Dong, University of Defence, CZ 

PP185 Development of LabVIEW Models for Resonant 


Tsveti Hranov, Nikolay Hinov, Technical University of 

Sofia, BG 

PP186 A Novel Detailed Analysis Of The Flyback Converter 

Utilizing A Transformer With Nonlinear Magnetizing 

Inductance 

Panagiotis Mantzanas, Thomas Duerbaum, Friedrich- 

Alexander-University Erlangen, D 

PP187 eDesignSuite: A New Design Tool for Digital Power 

Solutions 

Carmelo Giuseppe Viccica, Marcello Palano, Natale 

Porto, STMicroelectronics, I 

PP188 Design Concept of MMC-based Multi-port DC Hub 

for Multiterminal HVDC Grids 

Epameinondas Kontos, Pavol Bauer, Delft University of 

Technology, NL 

PP189 Direct-Model Predictive Control for Fault Ride- 

Through Capability Enhancement of DFIG 

Mohamed Abdelrahem, Ralph Kennel, Technical University 

of Munich, D 

PP190 AutoCrear- A Novel Software Tool for Automatic 

3D Creepage and Clearance Analysis 

Michael Martinek, e-laborate Innovations, D 

PP191 Power-Hardware-In-Loop Setup for Power Electronics 

Tests 

Giovanni De Carne, Xiang Gao, Marco Liserre, 

Christian-Albrechts-University, D 

PP192 Ensuring Fast Turn-Around Times for A Programmable 

Digital Power Controller 

Markus Schnell, Jörg Oehmen, Infineon Technologies, D 

PP193 A New Optimization Algorithm for Power Electronics 

Using the Mixed Integer Linear Programming 

Method 

Marco Schilling, Tobias Reimann, Technical University 

Ilmenau, D; Ulf Schwalbe, ISLE Steuerungstechnik und 

Leistungselektronik, D 

PP194 Novel Efficient and Reliable Network Simulation by 

Means of Lipschitz Constants 

Carsten Kuring, Technical University Berlin, D; Julian 

Dobusch, Thomas Dürbaum, Friedrich-Alexander- 

University Erlangen, D 

PP195 Hardware-in-the-Loop Parallelization for Fully 

Automated Testing of “AVL E-Storage BTE” 

Selimcan Deda, Roland Greul, Guenter Prochart, AVL 

LIST, AT 

On all three exhibition days, a great variety of exhibitors present their latest product developments and 

state-of-the-art solutions in 20-minutes slots. 

Tuesday, 16 May 2017 10:00 – 16:40 

Wednesday, 17 May 2017 09:40 – 16:40 

Thursday, 18 May 2017 10:00 – 16:00 

The following exhibitors are represented: 

Full program available 

on pcim-europe.com 

MES Manz Electronic Systeme OHG | Alpha Assembly Solutions | Mentor Graphics | Rohde & Schwarz GmbH & Co KG. | 

Sekels GmbH | Panasonic Automotive & Industrial Systems Europe GmbH | Siebel Elektronik GmbH | RECOM Power GmbH 

Monolith Semiconductor, Inc. | A.L.M.T. Corp. | Advanced Cooling Technologies Inc. | ON Semiconductor | KEMET Electronics 

Corporation | Littelfuse | AMS Technologies AG | ROGERS Corporation |Indium Corporation of Europe | Proton-Electrotex 

| dSPACE GmbH | EPCOS AG, A TDK Group Company | Traftor Europe | Hitachi Metals Europe GmbH | Mitsubishi Electric 

Europe B.V. | Vincotech GmbH | Kapteos S.A.S. | ABB Switzerland Ltd. - Semiconductors | SEMIKRON International GmbH | 

Allegro MicroSystems, LLC | POCO Holding Co., Ltd. | HEIDEN power GmbH | ROHM Semiconductor GmbH | Diotec Semiconductor 

AG | Tamura-Europe Ltd. | Yole Developpement SA | VACUUMSCHMELZE GmbH & Co. KG | EPCOS AG, A TDK Group 

Company | Jianghai Europe Electronic Components GmbH | Sumitomo Electric Industries, Ltd. | FuG Elektronik GmbH | Hollmén 

& Co Ltd | Honeywell Europe N.V. | POWERSYS | Analog Devices GmbH | Aperam Alloys Amilly | EpiGaN nv | SET Power 

Systems GmbH | Exagan S.A. | MB Electronic AG | Amulaire Thermal Technology | Wolverine Tube Inc. MicroCool Division | 

AC Power Corp. | Magnetics Inc. | Hangzhou Firstack | Technology Co., Ltd. | 3 M Deutschland | tesema Leistungselektronik | 

GT elektronik GmbH & Co. KG | DEWETRON GmbH | Panasonic Automotive & Industrial Systems Europe GmbH | Vincotech GmbH 

As of March 2017/subject to change without notice

38 

39 

Conference Thursday, 18 May 2017 


08:45 Room Brüssel 1 KEYNOTE: Evolution in Topologies as a Result of New Devices and Enabling Technologies, Ionel Dan Jitaru, Rompower, USA 



Advanced Wide Bandgap - GaN 


Power Electronics in Automotive 


Control and Drive Strategies in Power 

Converters 

Room Mailand 


Capacitors 

Chairperson: Peter Wallmeier, Delta 

Energy Systems, D 

Chairperson: Giuseppe Tomasso, University 

of Cassino and South Lazio, I 

Chairperson: Hans-Günter Eckel, 


Chairperson: Klaus F. Hoffmann, 

Helmut-Schmidt-University, D 

10:00 

Investigation of GaN-HEMTs in Reverse 

Conduction 

Richard Reiner, Patrick Waltereit, Beatrix 

Weiss, Rüdiger Quay, Oliver Ambacher, 

Fraunhofer-Institute IAF, D 

10:30 

Short-Circuit Robustness for 650 V E-Mode GaN Transistors, 

Current Measurement for High Speed Protection 

Circuit 

Matthieu Landel, Cyrille Gautier, Denis Labrousse, 

Stéphane Levebvre, ENS Cachan - SATIE, F 

11:00 

Mechatronic Design of 2 kW SiC DC/AC 

Converter with 200 W/inch 

Thomas Menrath, Stefan Matlok, Stefan 

Endres, Stefan Zeltner, Bernd Eckardt, 

Fraunhofer Institute IISB, D 

11:30 

A Full SiC Module Operational at 200°C Junction Realized 

by a New Fatigue-Free Structure 

Hiroshi Notsu, National Institutee of 

Advanced Industrial Science and Technology 

(AIST), J 

10:00 

Influences of WPT-Coil Losses and Coupling Coefficient on 

the Resonance Circuits of Wireless Power Transfer Systems 

Christof Ziegler, Stefan Weber, EPCOS, D; Georg Heiland, 

Finepower D; Denis Kraus, Technical University of Munich, D 

10:30 

6 kW Bidirectional, Insulated On-board Charger With Normally-Off 

GaN Gate Injection Transistors 

Stefan Endres, Christoph Seßler, Bernd Eckardt, Stefan Zeltner, 

Fraunhofer Institute IISB, D; 

Tatsuo Morita, Panasonic Corporation, J 

11:00 

650V, 7mOhm SiC MOSFET Development for Dual-Side Soldered 

or Sintered Power Modules 

Monty Hayes, Delphi Automotive Systems, USA; Brett Hull, Jeffrey 

Casady, John Palmour, Wolfspeed, USA 

11:30 

Spectral Control of an Automotive DC-DC 

Converter 

Christian Korte, Stefan Götz, Eduard Specht, Porsche Engineering 

Group, D 

10:00 

Digital Control of Hard Switched 

Converters by Phase Modulated 

Pulse Width Modulation PMPWM 

Stefan Matlok, Bernd Eckardt, Bernd Seliger, 

Martin März, Fraunhofer Institute IISB, D 

10:30 

Non-Linearities Compensation Technique for VSI Fed AC 

Drives 

Mauro Di Monaco, Giuseppe Tomasso, Ciro Attaianese, 

Umberto Abronzini, University of Cassino and Southern 

Lazio, I 

11:00 

Novel Control Scheme for the Internal Energies and Circulating 

Currents of Modular Multilevel Converter 

Yeqi Wang, Rainer Marquardt, University of the Federal 

Armed Forces Munich, D 

11:30 

Suitable Turn-Off Strategies for IGBTs 

with a High Desaturation Current During 

Short Circuit Failures Detected with the 

2D – Short Circuit Detection Method 

Stefan Hain, Mark-M. Bakran, University of 

Bayreuth, D 

10:00 

Ceramic Power Capacitors and Optimized 

Packaging 

Markus Koini, EPCOS, AT 

10:30 

Ultra Capacitors - Capacitor Based Energy 

Storage 

Jan-Hendrik Ernst, Maxwell Technologies, 

D; Robert Lynds, Catalin Popescu, Mark 

Sutherland, Maxwell Technologies, USA 

11:00 

Review of Film Capacitor Trends and 

Design Changes as a Result of Improved 

Technologies in Power Electronics 

Ayse Kartal, EPCOS, D 

11:30 

New Concepts of Capacitor Designs in 


Thomas Ebel, FTCAP, D 

12:00 

A Novel SiC Power Module with 3D 

Integration 

Jinchang Zhou, ON Semiconductor, USA 

12:00 – 14:00 Lunch Break 


40 

41 

Conference Thursday, 18 May 2017 



SiC Modules Diodes 


Power Converters with Wide Bandgap Devices III 


System Reliability 

Room Mailand 

Energy Storage and Power Quality Solutions 

Chairperson: Munaf Rahimo, 


Chairperson: Hubert Schierling, 

Siemens, D 

Chairperson: Uwe Scheuermann, 

Semikron Elektronik, D 

Chairperson: Daniel Chatroux, 

CEA-LITEN, F 

14:00 

Design and Analysis of a Low-Inductive Power-Semiconductor 

Module with SiC T-MOSFET and Si IGBT in 

Parallel Operation 

Christian Müller, Infineon Technologies, D 

14:30 

1.7 kV High-Current SiC Power Module Based on 

Multi- Level Substrate Concept and Exploiting MOS- 

FET Body Diode during Operation 

Slavo Kicin, ABB Corporate Research, CH; Enea Bianda 

Francisco Canales, Samuel Hartmann, Fabian Fischer, 


15:00 

All SiC Module with 1st Generation 

Trench Gate SiC MOSFETs and New 

Concept Package 

Thomas Heinzel, Fuji Electric Europe, D; 

Yoshinori Iwasaki, Mikiya Chounabayashi, 

Masayoshi Nakazawa, Susumu Iwamoto, 

Yasuhiko Oonishi, Motohito Hori, Hideaki 

Kakiki, Osamu Ikawa, Fuji Electric, J 

15:30 

Robust SiC JBS Diodes for the Application in Hybrid 

Modules 

Lukas Kranz, Renato Amaral Minamisawa, Lars Knoll, Sven 

Matthias, Andrei Mihaila, Charalampos Papadopoulos, 

Athanasios Mesemanolis, Elena Mengotti, Giovanni Alfieri, 

Vinoth Kumar Sundaramoorthy Enea Bianda, Munaf Rahimo, 


14:00 

Design and Performance of a 200 kHz 

GaN Motor Inverter with Sine Wave Filter 

Franz Stubenrauch, Norbert Seliger, University of 

Applied Sciences Rosenheim, D; Doris Schmitt- 

Landsiedel, Technical University Munich, D 

14:30 

Reducing dv/dt of Motor Inverters by 

Staggered- Edge Switching of Multiple 

Parallel SiC Half- Bridge Cells 

Thomas Fuchslueger, Hans Ertl, Technical University 

of Vienna, AT; Markus A. Vogelsberger, Bombardier 

Transportation, AT 

15:00 

Highly-Reliable Flyback-Based PV Micro-Inverter Applying 

Power Decoupling Capability Without Additional Components 

Hiroki Watanabe, Jun-Ichi Itoh, Nagaoka University of Technology, 

J 

15:30 

Compact Highly Efficient 3-kW MHz Inverter 

Based on SMT SiC MOSFETs 

Fabian Denk, Christoph Simon, Michael Heidinger, 

Rainer Kling, Wolfgang Heering, Karlsruhe Institute 

of Technology (KIT), D 

14:00 

Power Cycle Testing of Sintered SiC- 

MOSFETs 

Ralf Schmidt, Ronny Werner, Siemens, D; 

Jeffrey Casady, Brett Hull, Adam Barkley, 

Wolfspeed, USA 

14:30 

Synchronous Observing Methodology of 

Surface Images and Energy Data at 

Power Chip Destruction 

Toshiya Tadakuma, Akiko Goto, Teruaki 

Nagahara, Junji Yamada, Mitsubishi Electric 

Corporation, J 

15:00 

Active Current Trajectory Control (ACTC) - for Hot 

Swap, Capacitor Discharge, 

Circuit Breaker and Current Shaping 

Juan Sanchez, Kennith Kin Leong, Infineon Technologies 

Austria , AT 

15:30 

Impact of Humidity on Railway Converters 

Christian Zorn, Nando Kaminski, University 

of Bremen, D; Michel Piton, ALSTOM, F 

14:00 

A Comparative Study on Si-SJ-MOSFETs 

vs. GaN-HEMTs Used for LLC-Single- 

Stage Battery Charger 

Lukas Keuck, Patrick Hosemann, Benjamin 

Strothmann, Joachim Böcker, University of 

Paderborn, D 

14:30 

Investigation and Optimization of the 

Accuracy of Current Sensors for High Voltage LFP- 

Batteries 

Simon Bischof, Thomas Blank, Marc Weber, Karlsruhe 


15:00 

High-Efficiency UPS Protection for Industrial 

Applications 

Lorenzo Giuntini, Massimiliano Brioschi, GE 

Consumer & Industrial, CH 

15:30 

A Battery and Super Capacitor Hybrid Energy Storage 

System for Power Flow Smoothing in Low Voltage 

Grids 

Bernd Bohnet, Michael Braun, Karlsruhe 



42 

43 

List of Exhibitors 

At PCIM Europe 2017, more than 450 exhibitors from 28 nations showcase products and services as well as 

the most recent innovations in the fields of power electronics, intelligent motion, renewable energy and 

energy management. 

Siver-Sponsor 

Media Partner 

3M Deutschland, D 

A Media Bodo’s Power Systems, D 

A.L.M.T., J 

Aavid Kunze, D 

Aavid Thermalloy, I 

ABB Switzerland – Semiconductors, CH 

AC Power, TW 

Advanced Cooling Technologies, USA 

Advanced Techne – PRIATHERM DIVISION, I 

Advanced Technology & Materials, CN 

Advice Electronics, IL 

AgileSwitch, USA 

AIC Europe, D 

AIT Austrian Institute of Technology, A 

AixControl, D 

ALCON Electronics, IND 

alfatec, D 

Alisha Coils & Transformers, IND 

Allegro MicroSystems Europe, GB 

Allray, CN 

Alpha and Omega Semiconductor, USA 

Alpha Assembly Solutions 

ALPHA-Numerics, D 

alpitronic, I 

alttec, D 

Alutronic Kühlkörper, D 

Amantys Power Electronics, GB 

AMS Technologies, D 

Amulaire Thermal Technology, TW 

Analog Devices, D 

Anhui Astromagnet, CN 

APAQ Technology, GB 

Aperam Alloys Amilly, F 

APM Technologies (Dongguan), CN 

APOJEE, D 

Applied Micro Electronics AME, NL 

Arcel, F 

Arthur Behrens, D 

ASM Assembly Systems, D 

AT & S Austria Technologie & Systemtechnik, A 

Atherm, F 

ATV Technologie, D 

austerlitz electronic, D 

AutomatisierungsTechnik Voigt 

Autosplice Europe, D 

AUXEL, F 

AVX, GB 

Behlke Power Electronics, D 

Beijing Deepcool Industries, CN 

Beijing Sunking Power Electronic Technology, CN 

Bestbright Electronics, CN 

BINDER tecsys, D 

BLOCK Transformatoren-Elektronik, D 

Bluestar Silicones France, F 

Bourns Sensors, D 

Brightek (Europe), GB 

Broadcom Europe, D 

BROXING, CH 

Bruckewell Technology, TW 

Caltest Instruments, D 

Cascade Microtech, USA 

CEFEM INDUSTRIES, F 

CEJN-Product, D 

Celem Passive Components, IL 

CeramTec, D 

Chang Sung, ROK 

China Amorphous Technology, CN 

CHROMA ATE EUROPE, NL 

Cixi ULO Electronics, CN 

CKE Products by Dean Technology, USA 

Cleverscope, NZ 

Cluster Leistungselektronik im ECPE, D 

CMC Klebetechnik, D 

CMP, F 

Columbia-Staver, GB 

Constellium Singen, D 

Cool Tec Electronic, D 

COOLTECH, I 

CoorsTek, D 

Cosmo Ferrites, IND 

CPS Technologies, USA 

CST, D 

CTX Thermal Solutions, D 

Cystech Electronics, TW 

DACO Semiconductor, TW 

Danfoss Silicon Power, D 

Danotherm Electric, DK 

dataTec, D 

DAU GmbH & Co., A 

Dean Technology, USA 

Denka Chemicals, D 

DETAKTA Isolier- und Meßtechnik, D 

DEWESoft, D 

DEWETRON Deutschland, D 

DFA Media, GB 

Diotec Semiconductor, D 

DODUCO, D 

Doublecircle Electronics Group, CN 

DOWA HD Europe, D 

dSPACE, D 

DSW Elektronik, D 

Ducati Energia, I 

DuPont de Nemours (Luxemburg), L 

DYNETICS, D 

Dynex Semiconductor, GB 

EA Elektro-Automatik 

EBG Elektronische Bauelemente, A 

EBV Elektronik 

ECOMAL Europe, D 

ECPE European Center for Power Electronics, D 

ed-k, D 

EKL, D 

Electrohms Pvt., IND 

Electronic Concepts (Europe), IRL 

ELECTRONICON Kondensatoren, D 

Electrovipryamitel JSC, RUS 

ELEKTRISOLA Dr. Gerd Schildbach, D 

Elektronik-Kontor Messtechnik, D 

ELSCHUKOM Elektroschutzkomponentenbau, D 

EpiGaN, B 

ESKA Erich Schweizer 

ET System electronic, D 

ETI Elektroelement d.d., SLO 

Exagan, F 

Exxelia Supply, F 

F & K Delvotec Bondtechnik, D 

Ferroxcube Deutschland, D 

Filcap, D 

Finepower, D 

Firecomms, IRL 

Fischer Elektronik, D 

Flux, DK 

Foshan City Shunde District ShengYe Electrical, CN 

Foshan city Xinyuan Electronic, CN 

Franz Steger Transformatorenbau, D 

Fraunhofer Institut für Integrierte Systeme und 

Bauelementetechnologie IISB, D 

Fraunhofer Institut für Solare Energiesysteme ISE, D 

Fraunhofer-Institut für Zuverlässigkeit und 

Mikro integration IZM, D 

Frizlen, D 

FTCAP, D 

FuG Elektronik, D 

Fuji Electric Europe, D 

Furukawa Electric, J 

GaN Systems, CDN 

Gaotune Technologies, CN 

Gemballa Electronics, D 

General Components, TW 

GES Electronic & Service, D 

Global Power Technologies Group, USA 

GLYN, D 

GrafTech, USA 

GT elektronik, D 

Guangdong Fengming Electronic Tech, CN 

Gutre, D 

GvA Leistungselektronik, D 

HAHN, D 

Haining Ferriwo Electronics Co., CN 

Hangzhou Firstack Technology, CN 

Hangzhou Liansheng, CN 

Hangzhou Xenbo Heat transfer Science & Technology, CN 

HBM, D 

HE System Electronic, D 

Hefei Shengda Electronics Technology Industry, CN 

HEIDEN power, D 

Hengdian Group DMEGC Magnetics, CN 

Henkel, D 

Heraeus Deutschland, D 

HERVER-9, E 

Hesse GmbH, D 

HF Instruments, D 

High Voltage Power Solutions Products 

by Dean Technology, USA 

Himag Planar Magnetics, GB 

Hitachi Europe, GB 

Hitachi Metals Europe, D 

Höganäs AB, S 

Hollmén & Co, FIN 

Honeywell Europe, B 

Hubei Ruiyuan Electronic Co., CN 

Huhn-Rohrbacher, D 

HV Components Associates Products 

by Dean Technology, USA 

HVP High Voltage Products, D 

HVR International, D 

HYDRA Components, D 

HY-LINE Power Components Vertriebs, D 

I.C.E., I 

IB-Billmann, D 

IC Teplocom, RUS 

ICAR – INDUSTRIA CONDENSATORI, I 

ICC Media, D 

ICEL, I 

ILFA 

IMS-TIGER electronics, D 

Indium Corporation of Europe, GB 

InduComp Kft., H 

Inductive Systems Europe, NL 

Ineltron, D 


Ingenieurbüro Federer, CH 

innovatek OS, D 

InPower Systems, D 

Intego, D 

INTEGRATED Engineering Software, CDN 

INTENSA Technische Dienstleistungen, A 

Interplex NAS Electronics, D 

InTiCa Systems, D 

Isabellenhütte Heusler, D 

IS-POWER a Division of IS-Line, D 

ITELCOND, I 

IWATSU TEST INSTRUMENTS, J 

IXYS Semiconductor, D 

J&D Electronics, ROK 

Jentech Precision Industrial, TW 

JFE Steel, J 

JGD Semiconductor, CN 

Jianghai Europe Electronic Components, D 

Johann Lasslop, D 

Junior Kühlkörper, D 

Kanthal Globar Sandvik Heating Technology, USA 

Kapteos, F 

Karlsruher Institut für Technologie, D 

Kaschke Components, D 

KCC, ROK 

KEMET Electronics, USA 

Kendeil, I 

KERAFOL – Keramische Folien, D 

Keysight Technologies Deutschland, D 

KLEINER Stanztechnik, D 

KOA Europe, D 

KRAH Elektronische Bauelemente 

KYOCERA Fineceramics, D 

LCP Laser Cut Processing, D 

Leclanché Capacitors, CH 

Leicht + Müller Stanztechnik, D 

Leistungselektronik JENA, D 

LEM Europe, D 

Littelfuse Europe, D 

LS Mtron, ROK 

MACCON, D 

MacMic Science & Technology, CN 

MagDev, GB 

Magnachip Semiconductor, ROK 

Magna-Power Electronics, D 

Magnetec, D 

Magnetics, USA 

Malico, TW 

Man Yue Electronics, HK 

Mareton d.o.o., HR 

Marini Mario & C., I 

MB Electronic, D 

Mecc. AL, I 

Mentor Graphics (Deutschland), D 

Mersen France, F 

MES Manz Electronic Systeme, D 

MEV Elektronik Service, D 

Michael Koch, D 

Micro Commercial Components, USA 

Microchip Technology, D 

Micrometals, USA 

Microsemi, USA 

MinDCet, B 

Mitsubishi Electric Europe, D 

MJC Elektrotechnik, D 

Monolith Semiconductor, USA 

Mornsun Guangzhou Science & Technology, CN 

MS Power, D 

MUECAP Bauelemente, D 

Multi Measuring Instruments, J 

Murata Electronics Europe, NL 

Myrra Deutschland, D 

Nanjing New Conda Magnetic Industrial, CN 

NGK Electronics Devices, J 

Ningbo Degson Electrical, CN 

NORWE, USA 

NORWE;D 

Nucon Energy, RUS 

NWL Capacitors, USA 

OMICRON Lab, A 

ON Semiconductor, GB 

Online Engineering, D 

Otto Brenscheidt, D 

PADA Engineering, I 

Panasonic Automotive & Industrial Systems Europe, D 

PARKER OVERSEAS, IND 

Payton Planar Magnetics, IL 

PBF Group, NL 

Peniel Electronics, ROK 

PETERCEM, F 

PHOENIX CONTACT Deutschland, D 

PHOENIX MECANO Power Quality, D 

Piciesse Elettronica, I 

Pikatron, D 

PLANSEE SE, A 

Plexim, CH 

PMK Mess- & Kommunikationstechnik, D 

POCO Holding, CN 

POMCEG ELECTRONICS, E 

Power Electronic Measurements, GB 

Power Integrations, D 

POWERSEM, D 

POWERSYS, F 

PPM - Pforzheimer Präzisions Mechanik 

Prima Electro, I 

Profiltech Stufenbandprofile, D 

Promet, CH 

ProNova, D 

ProTek Devices, USA 

Pulse Magnetic & Power Electronics, IND 

R & D Electronics International, HK 

R3Tec, D 

Rara Electronics, ROK 

RECOM Power, A 

Richardson RFPD Germany, D 

RISSE electronic, D 

RM Prüftechnik, D 

ROGERS Germany, D 

Rohde & Schwarz Vertriebs, D 

ROHM Semiconductor, D 

RSG Electronic Components, D 

Rubadue Wire, USA 

Rudolf Pack LitzWire, D 

RUTRONIK Elektronische Bauelemente, D 

Samwha Europe, D 

SanRex Europe Branch, FIN 

SanRex, USA 

Sarnikon Metal ve Elektronik San. ve Tic, TR 

SAS IDEALEC, F 

SBA-Trafobau Jena, D 

SBA-TrafoTech, D 

SBE, USA 

Schmidbauer Transformatoren und Gerätebau, D 

SCHROEDER + BAUER Werkzeugbau Stanztechnik, D 

Schukat Electronic, D 

Schulz Stanz- u. Umformtechnik, D 

Schulz-Electronic, D 

Schunk Hoffmann Carbon Technology, A 

Schunk Sonosystems, D 

schwa-medico Transformatorenbau & Industrieprodukte, D 

Schweizer Electronic, D 

SCR, F 

Seifert electronic, D 

Sekels, D 

SEMIKRON International, D 

Sensitec, D 

Serigroup, I 

SERTO, D 

SET, D 

SET Power Systems, D 

Shanghai EAGTOP Electronic Technology 

Shenzhen Belta Technology, CN 

Shenzhen BYD Microelectronics, CN 

Shenzhen Cectn Technology, CN 

Shenzhen ChuangShiDing Electronic, CN 

Shenzhen Click Technology, CN 

Shenzhen Gaoyu Electronic Technology, CN 

Shenzhen Yamaxi Electronics 

Shindengen UK, GB 

Siba, D 

SIBO Electronic Vertriebs, D 

Siebel Elektronik, D 

Siemens, D 

SIGNALTEC, D 

Sika Deutschland, D 

SINUS Electronic, D 

SIR Resistor, I 

SIRECTIFIER ELECTRONICS TECHNOLOGY, CN 

SIRIO ELETTRONICA, I 

SK Electric Hong Kong, CN 

SMP, D 

SMT Maschinen- und Vertriebs, D 

Sontronic, D 

Special-Ind Deutschland, D 

StandexMeder Electronics, D 

Starpower Europe, CH 

Stercom Power Solutions, D 

STMicroelectronics International, CH 

Strohheker Kunststoffteile und Metallwaren 

STS, D 

Su Zhou OCA Microelectronics, CN 

SUMIDA Components & Modules, D 

Sumitomo Electric Industries, J 

Sunrise Power Transformers, D 

Supreme Power Solutions, CN 

Sycomp, D 

System Plus Consulting, F 

Taiwan Chinsan Electronic Industrial, TW 

Taiwan Semiconductor Europe, D 

Tamura, J 

Tamura-Europe, GB 

TCT Tores Composants Technologies, F 

TDG Holding, CN 

TDK Europe, D 

Tech Semiconductors, CN 

Technagon, D 

Technix, F 

TECNOAL, I 

TECNOMEC, I 

Tektronix, D 

TELCON, GB 

Teledyne LeCroy, D 

tesema Leistungselektronik Zweign. der Pikatron, D 

TH Proton-Electrotex, RUS 

THALES MICROELECTRONICS, F 

Thomas Waidner, D 

Tianjin Century Electronics, CN 

Tianyi Electronic Technolog, CN 

Tigris Elektronik, D 

TOELLNER Electronic Instrumente, D 

Toshiba Electronics Europe, D 

Toshiba Materials, J 

trafomodern Transformatorengesellschaft, A 

Traftor Technology (Shenzhen) , CN 

TRAMAG Transformatorenfabrik, D 

Unisonic Technologies, TW 

United Silicon Carbide, USA 

University of Nottingham, GB 

VACUUMSCHMELZE, D 

Vicor Germany, D 

Vinatech, ROK 

Vincotech, D 

Vishay Europe Sales, D 

VISIC Technologies, IL 

Vogel Business Media, D 

WAGO Kontakttechnik 

Walther-Präzision, D 

WARMES, D 

Wayne Kerr Europe, D 

Webra Industri, S 

WeEn Semiconductors UK, GB 

Weidmüller Interface, D 

Well Ascent Electronic, CN 

WEVO-Chemie, D 

widap electronic components, D 

Wieland-Werke, D 

Wijdeven Inductive Solutions, NL 

WIMA, D 

Wolfspeed, A Cree Company, USA 

Wolverine Tube MicroCool Division, USA 

WÜRTH ELEKTRONIK eiSos, D 

Würth Elektronik ICS, D 

Xi’an Miqam Microelectronics Materials, CN 

Xi’an TRUSUNG Advanced Material, CN 

Yangzhou Pairui, CN 

Yangzhou Yangjie Electronic Technology, CN 

Yokogawa Deutschland, D 

Yole Developpement, F 

Zeasset Electronic Technology, CN 

ZES ZIMMER Electronic Systems, D 

ZEZ SILKO, CZ 

Zhuzhou CRRC Times Electronic, CN 

Zurich Instruments, CH 

As of March 2017/subject to change without notice.

44 

45 

Industry Forum 

Hall 6 Booth 6143 

Room Plan 

Time Topic Company 


10:30 – 11:00 Research activities of the University of Rostock for future 

off-shore wind grids 

Universität Rostock 

Exhibition Centre Nuremberg 

11:00 – 11:30 3.3kV SiC hybrid technology combined with HPnC package Fuji Electric Europe 

Parkhaus 

Parking 

11:30 – 12:00 Mehrwert-Batteriemanagementsysteme – Gleiche Hardware, 

mehr Informationen, mehr Sicherheit, mehr Zuverlässigkeit 

RWTH Aachen University 

Ost 

12:15 – 13:15 Developing the next generation of power supplies Power Systems Design 

13:30 – 14:00 Monolithically integrated GaN circuits Fraunhofer IAF 

14:00 – 14:30 Der PLANETENMOTOR – Eine neue, unkonventionelle 

Kombination von Elektromotor und Planetengetriebe für 

kompakte elektrische Antriebe 

14:30 – 15:30 Benefits and reliability of SiC devices for industrial and 

automotive applications 

15:30 – 16:30 Presentations of the Conference Award winner 2017 


10:00 – 11:30 Status and perspectives in the power semiconductor 

(Si, SiC, GaN) business 

11:30 – 12:30 Automotive electronics battleground: 

semiconductor vs. tier-1 business model 

Technische 

Universität Wien 

ROHM Semiconductor 

Yole Développement 

Roland Berger 

Münchener Straße 

12 

NCC West 

Rotunde 

U-Bahn / Subway 

Messe 

11 10 

Frankenhalle 

S 11 

Mitte 

Eingang 

Entrance 

VIP 

West/ 

Mitte 

NCC 

Mitte 

Betriebshof 

Service- 

Center 

Mitte 

Otto-Bärnreuther-Straße 

NCC 

Mitte 

S 1 

Mitte 

Operation 

Center 

NCC 

Mitte 

9 

Messepark 

S 1 

1 

3C 

8 

im Bau 

under 

construction 

S 7 

6 

5 

S 1/2 S 4/5 

2 

S 2/3/4 

3 

7 

4 

S 3/4 

S 4 

ServicePartner 

Center 

7A 

NCC Ost 

4A 

3A 

VIP 

Ost 1 

Ost 

Eingang 

Entrance 

VIP 

Ost 2 

Ost 

12:30 – 13:30 Next steps in the industrialization of SiC power switches Infineon Technologies 

Parking Conference 

Süd-Ost 1 

Süd-Ost 2 

13:30 – 14:30 SIC – design, EMC and measurement A Media, Bodo’s Power Systems 

0 

50 100m 

Karl-Schönleben-Straße 

West 

Einfahrt . Access 

Karl-Schönleben-Straße 

Ost 

Einfahrt . Access 

14:30– 15:30 GaN – design, EMC and measurement A Media, Bodo’s Power Systems 

15:30– 16:30 Software and hardware solutions for HIL und RCP 

applications in power electronics 

Plexim 

Halle 12 

Hall 12 

Halle 10 

Hall 10 

NCC Mitte, Level 0 

Halle 12 

Hall 12 

NCC Mitte, Level 1 

Hall 10 


10:00 – 10:30 Optimized high current IGBT gate driver improves 

system efficiency 

10:30 – 11:30 Kühltechnologie: Verlustleistung, eine Leistung 

die keiner haben will. Was tun? 

11:30 – 12:30 Einführung in den Students' Day ECPE 

12:30 – 13:00 SiC MOSFETs – How can we match the success of 

SiC diodes? 

On Semiconductor 

Rohde & Schwarz 

Monolith 

Semiconductor 

Venedig 

Rotunde 

NCC West 

NCC West 

Eingang 

Entrance 

Frankenhalle 

NCC Mitte 

Entrance 

Conference 

Counter 

NCC Mitte 

Nizza 

Presse 

Center 

West 

Service-Center 

Mitte 

Madrid 

Service Foyer 

9 

Mitte 

Brüssel/ 

München 

Rotunde 

Hall 9 

NCC West 

Brüssel 

Poster 

Session 


Lunch 

Hall 1 

Frankenhalle 

Verona 

Lissabon 

Mailand 

Basel 

Piazza 

VIP 

Athen 

Nizza 

München 

1 2 

Foyer 

Brüssel/ 

München 

2 

Brüssel 

Hall 9 

1 

13:30 – 14:00 NPI - A balancing act for engineers 

--Global Components Sourcing-- 

14:00 – 15:00 Boosting battery energy storage systems: 

three-level power modules using SiC MOSFET 

Brightek (Europe) 

Danfoss Silicon Power 

PCIM Europe 2017 

SMT Hybrid Packaging 2017 

Entrances and Services 


Advisory Board/ 

Speaker‘s Room 

As of March 2017/subject to change without notice

46 

47 

Registration Information 

General Information 

Registration Fees 

These are per named delegate as follows: 

Until 

10 April 2017 

From 

11 April 2017 

One Conference Day 650 EUR 750 EUR 

Two Conference Days 1,090 EUR 1,190 EUR 

Three Conference Days 1,290 EUR 1,390 EUR 

Tutorial Full Day 690 EUR 790 EUR 

Seminar Half Day 345 EUR 395 EUR 

University Staff* 920 EUR 920 EUR 

Students 40 % Discount 40 % Discount 

Exhibitor special rate** 250 EUR 250 EUR 

* University staff and students may only register for the full conference at a reduced rate and must enclose a copy of their university ID-card. 

A student discount of 40 % is available upon request. This discount cannot be combined with the University Staff fee. Please contact Ms. 

Daniela Käser at Daniela.Kaeser@mesago.com for registration. 

** A transferable ticket valid for the three keynote presentations including the conference proceedings is only available to PCIM Europe 2017 

exhibitors. A special registration is required. 

On-site registration: please add 30 EUR per participant. 

All fees plus 19% VAT. 

Venue 

The seminars on Sunday, 14 May 2017 and the tutorials on 

Monday, 15 May 2017 will take place at Arvena Park Hotel, 

Görlitzer Str. 51, 90473 Nuremberg, phone: +49-911-89220. 

The conference from Tuesday, 16 May 2017 until Thursday, 

18 May 2017 will take place at Conference Center Mitte, 

NürnbergMesse, Otto-Bärnreuther-Strasse, 90471 Nuremberg. 

Accommodation 

For hotel booking please contact the hotel directly. 

PCIM Europe Head Quarter Hotel 

Hotel Arvena Park 

Görlitzer Str. 51 

D-90473 Nürnberg 

Phone: +49 911 89 22 0 

info@arvenapark.de 

5 min. by underground U1 to the conference site. 

Registration Counter Opening hours 

Arvena Park Hotel 

Sunday 14 May 2017 from 13.00 until 17.00 

Monday 15 May 2017 from 8.00 until 14.00 

NCC Mitte, NürnbergMesse 

Monday 15 May 2017 from 16.00 until 18.00 

16 – 18 May 2017 from 8.00 until 17.00 

Questions? 

Ms. Daniela Käser 

Phone: +49 711 61946-972 

daniela.kaeser@mesago.com 

Registration and 

terms and conditions 

on pcim-europe.com 

Travel 

There are several non-stop flights to Nuremberg daily. In addition, Nuremberg´s closeness to international airports 

such as Frankfurt, Munich, Zurich, Amsterdam or Paris ensures optimum connections to the intercontinental flight 

network. Getting from the airport to the exhibition centre is fast and easy. The airport is close to the city with 

direct underground and taxi connections to the exhibition centre. The underground takes you in 20 minutes from 

the airport to the exhibition centre. At Nuremberg Airport, taxis to the exhibition centre are available around the 

clock. Take the taxi directly to the exhibition centre. Journey time from the airport to the exhibition centre by taxi 

is approximately 15 minutes and costs about 25 EUR. 

You can reach Nuremberg´s main train station ‘Nürnberg Hauptbahnhof’ conveniently from every German city with 

the following trains: ICE, IC or EC. There are also frequent train connections from major European cities such as 

Paris, Brussels, Zurich, Vienna, Amsterdam or Prague. From ‘Nürnberg Hauptbahnhof’ the underground U1 or U11 

(direction: ‘Langwasser Süd’) will take you directly to the exhibition centre in only 8 minutes. At the main train 

station in Nuremberg there are several taxis waiting for you. By taxi you reach the exhibition centre within 10 minutes. 

Nuremberg is centrally located in the South of Germany. Its excellent connections to the European motorway and 

direct feeder roads make it easy and convenient to reach the exhibition centre by car. Destination address for your 

navigation system: NürnbergMesse, Karl-Schönleben-Str., Messeplatz 1, 90471 Nuremberg 

For more travel and hotel information please visit pcim-europe.com

48 

PCIM Worldwide 

05 – 07 June 2018, Nuremberg, Germany 


27 – 29 June 2017, Shanghai, China 

pcimasia-expo.com 

Organizer 

Mesago PCIM GmbH 

Rotebuehlstr. 83 – 85 

70178 Stuttgart 

Phone: +49 711 61946-0 

pcim@mesago.com 


# pcimeurope

Conference Program

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