Datasheet - P0765ATF

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Datasheet - P0765ATF
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Datasheet -

P0765ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V (BR)DSS 650V R DS(ON) 1.5Ω @VGS = 10V ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) ±30 Continuous Drain Current TC = 25 °C 7 4.2 28 TA = 100 °C -55 to 150 2 PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS TC = 100 °C ID IDM Power Dissipation 52 20.8 A 1 , 2 Pulsed Drain Current IAS 6 Avalanche Energy L = 10mH EAS 163 TA = 25 °C PD Operating Junction & Storage Temperature Range TJ, TSTG 3 Avalanche Current 3 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 Pulse width limited by maximum junction temperature. 2 Limited only by maximum temperature allowed 3 VDD = 65V , starting TJ = 25°C Ver 1.0 I D 7A SYMBOL R �JC R �JA TYPICAL MAXIMUM 2.4 62.5 UNITS V A mJ W °C UNITS °C / W

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