高濃度ボロンドープ試料の 角度分解X線光電子分光による 濃度分布解析

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高濃度ボロンドープ試料の 角度分解X線光電子分光による 濃度分布解析

X


Concentration depth profiling of a heavily-boron-doped Si substrate

**


*

K. Kakushima, J. Kanehara, K. Tsutsui, T. Hattori, H. Iwai

IGSSE, Tokyo Institute of Technology

*FRC, Tokyo Institute of Technology

1


Lg

Plasma

Doping

SIMS profiles of plasma doped (PD) samples

K. Tsutsui et al., JAP, 104 (2008) 093709.

w/o RTA

Anneal

Diffusion

Xj

after spike-RTA

year 2011 2012 2013 2014 2015

L g

(nm) 24 22 20 18 17

Xj (nm) 10.5 9.5 8.7 8.0 7.3

(ITRS 2010 update, High performance)

+FLA


2


p +

K. Tsutsui et al., JAP, 104 (2008) 093709.

hν=500eVXXPS

(SPring-8 BL27SU)

B1s

B1s, Si2p 3/2

IMFP1nm

B



Si0.5nm

XPSB

30nmSIMS

3


I

⎛ x ⎞

= ∫ ∞ ⎜ − ⎟

0

⎝ λ sinθ


( z) A c( z + x) σ exp dx

dI

dz

c: σ:

λ: IMFP, A: , θ:

( z) c( z + x)

⎛ x ⎞

= A∫ ∞ σ exp⎜

− ⎟dx

0 dz ⎝ λ sinθ


z=0

z

(x=0)




x

contribute

for I(z)

c(z)

⎡ = Aσ

⎢ − c ∫ ∞ ⎜ ⎟dx

⎣ λ sinθ

0

⎝ λ sinθ


A

= −Aσc( z) + I( z)

λ sinθ


1 dI

( )

( z)

1

1

c z = − + I( z)

c0 Aσ

dz λσ sinθ

=

1

⎛ x ⎞ ⎤

( z) + c( z + x) exp − ⎥ ⎦

I

λσ sinθ

( z)

4


(abruptness)

Undrestimation of surface

concentration, c 0 /c(z)

1.0

0.8

0.6

0.4

0.2

λsinθ=0.5nm

c

c

0

= a a

λsinθ=1.0nm

( z) + ln( 10) λ sinθ

0

0 2 4 6 8 10

Abruptness (a), (nm/decade)

c

B concentration (cm -3 )

( z)

= −

10 22

10 21

10 20

10 19

10 18

10 17

1 dI


dz

( z)

1

+ I

λσ sinθ

steep profile at surface

after RTA

before RTA

SIMS

10 16 0 5 10 15 20 25 30 35

Distance from surface (nm)

( z)


λsinθ

Spike-RTA34nm/dec.

5


1.


2. SiO 2

XPS


B 2 H 6 (He)

(as doped)

spike-RTA:1075 o C


SPring-8 BL26SU

hν=500eV, B1s, Si2p

TOA=15~80 o

6


O 3 HF

(0.5nm)

XPS


c

c

0

=

( z)

TOA: θ=80 o

1

I

λσ sinθ


= −

( z)

1 dI


dz

( z)

1

+ I

λσ sinθ

B concentration

( z)

(x10 21 cm -3 )

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0



0 1 2 3 4 5

Depth (nm)


Si

7


1.

2. /SiO 2

D.-A. Luh et al., Phys. Rev. Lett. 79, 3014 (1997).

3. Si2pSi2p 3/2

G. Hollinger et al., Appl. Phys. Lett., 44, pp. 93-95 (1984).

4. SiO 2 SiBλ1.18, 1.00nm

5. σ(Si2p 3/2 )/σ(B1s)=3.18

SiO 2

T. Hattori, et al., J. Vac. Sci. Technol., B 11, 1528-1532 (1993).

S. Tanuma et al., Surf. Interface Anal., 17, pp. 927-939 (1991).

J. J. Yeh and I. Lindau, At. Data and Nucl. Data Tables 32, 1 (1985).

6. SiO 2 B


d

Si

φ

θ

I(SiO 2 )

I(Si)

7. z=5~10nm

SIMS

8


B1sSi2p

Intensity (Arb. Units)

Intensity (Arb. Units)

before RTA

BO x

B

TOA=80 o

20 o

205 195 180 175

Binding energy (eV)

after RTA

105

after RTA SiO

BO 2

x

B

15 o

TOA=80 o

205 195 180 175

Binding energy (eV)

Intensity (Arb. Units)

Intensity (Arb. Units)

before RTA

TOA=80 o

SiO 2

20 o

Si

110 100 95

Binding energy (eV)

TOA=80 o

15 o

Si

110 105 100 95

Binding energy (eV)

Si2p

9


Intensity ratio (Arb. Units)

I(Si)

I(SiO)

before RTA

after RTA

0 30 60 90

TOA (degree)

SiO 2

SiO 2

0.87nm

λ Si2p3/2,Si

0.24nm

RTA

1.47nm

(SiSi2pIMFP)

0.43nm

Spike-RTA

SiIMFP

10


Intensity ratio (Arb. Units)

I(BO)

I(SiO)

after RTA

before RTA

0 30 60 90

TOA (degree)

RTA

SiO 2

SiO 2

0.87nm

0.87nm

0.60nm

1.5x10 20 cm -3

1.5x10 21 cm -3

0.6nm

Si

11


Si

Intensity ratio (Arb. Units)

after RTA

I(B)

I(Si)

before RTA

0 30 60 90

TOA (degree)

B concentration

(x10 21 cm -3 )

3.5

3.0

2.5

2.0

1.5


1.0

0.5


0.0

0 1 2 3 4 5

Depth (nm)

c(z)

IMFP

λ B1s,Si

0.35nm

(SiB1sIMFP)

0.61nm

Spike-RTA

SiIMFP

12


Si

B concentration (cm -3 )

(x10 21 )

3

2

1

0

-2

SiO 2

surface

surface

-1

0

Si

4.8x10 13 cm -3

3.8x10 13 cm -3

1 2 3 4

Distance from SiO 2 /Si interface (nm)


SiO 2


13


0.8nm


XPS

SiO 2 2


14

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