1 DETERMINAREA CARACTERISTICILOR DE REGIM STATIC ÅI ...
1 DETERMINAREA CARACTERISTICILOR DE REGIM STATIC ÅI ...
1 DETERMINAREA CARACTERISTICILOR DE REGIM STATIC ÅI ...
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<strong><strong>DE</strong>TERMINAREA</strong> <strong>CARACTERISTICILOR</strong> <strong>DE</strong> <strong>REGIM</strong> 67$7,&ù,',1$0,&<br />
PENTRU UN INVERSOR CMOS<br />
I. Analiza regimului static<br />
7RDWHLQIRUPD LLOHYRUILRE LQXWHSULQYL]XDOL]DUHDFDUDFWHULVWLFLLVWDWLFHGHWUDQVIHU&67<br />
RE LQXWSULQWU-RDQDOL]GHFF'&6ZHHSSHQWUXXQLQYHUVRU&026DYkQGLHúLUHDvQJROSe<br />
va determina tensiunea de prag VP a inversorului, nivelele logice GHLQWUDUHLHúLUHúLVHYDPDL<br />
YL]XDOL]DHYROX LDcurentului de alimentare I DD SHQWUXDSXQHvQHYLGHQ XQDGLQSURSULHW LOH<br />
HVHQ iale ale acestui inversor.<br />
6H YRU PRGLILFD XQHOH GLQ SURSULHW LOH WUDQ]LVWRDUHORU SHQWUX D SXQH vQ HYLGHQ <br />
GHSHQGHQ DXQRUDGLQFDUDFWHULVWLFLOHDQWHULRDUHGHDFHVWHSURSULHW LDOHPRGHOXOXL026<br />
Rezultatele se vor centraliza sub forma unui tabel înVR LWGHFRPHQWDULL<br />
(WDSHOHGHOXFUXVXQWXUPWRDUHOH<br />
1.6HYDFRQVWUXLFLUFXLWXOGLQILJXUDDOWXUDW3URFHGXUDXWLOL]DWHVWHFHDGLQH[HPSOHOH<br />
DQWHULRDUH6HVW<strong>DE</strong>LOHVFSURSULHW LOHGLVSR]LWLYHORUYDORULQXPH<br />
Tranzistorul MOSFET inversor M1 (MbreakN3GLQELEOLRWHFD%5($.287XWLOL]HD]<br />
LQL LDOSURSULHW LOHPRGHOXOXLLPSOLFLW6HGXQQXPHPRGHOXOXLVHVHOHFWHD]WUDQ]LVWRUXO-><br />
"Edit" -> "PSpice model", iar în "OrCAD Model Editor" VLQWD[DFDUHGHILQHúWHSURSULHWWLOH<br />
modelului este:<br />
.model MbreakN_N1 NMOS<br />
3HQWUX WUDQ]LVWRUXO GH VDUFLQ 0MbreakP3 din biblioteca BREAKOUT) se<br />
SURFHGHD]DQDORJ6LQWD[DFDUHGHILQHúWHSURSULHWWLOHPRGHOXOXLHVWH<br />
.model MbreakP_P1 PMOS<br />
$WHQ LHODSR]L LDWHUPLQDOHORUWUDQ]LVWRUXOXL3026sursa fLLQGFHDFRQHFWDWOD9 DD .<br />
$VWIHOLQL LDOFHLGRLWUDQ]LVWRULYRUDYHDWHQVLXQHDGHSUDJ97 9FHDGHODPRGHOXO<br />
implicit- vezi Anexa1).<br />
3HQWUXRE LQHUHDSULPHORU&67VXUVDGLQLQWUDUH9,1vúLYDPRGLILFDYDORDUHDvQWUHúL<br />
5V (V DD ) cu pasul dH9SULQFRQILJXUDUHDFRUHVSXQ]WRDUHDDQDOL]HLGHFF'&6ZHHS<br />
2. 6H ODQVHD] DQDOL]D PSPICE -> Run UH]XOWkQG JUDILFXO FDUH UHSUH]LQW LPDJLQHD<br />
CST. Se vor identifica nivelele logice de intrare V IL , V IH (delimitare zone de stabilitate 0..V IL<br />
PD[úL9 IH PLQ9FFUHVSHFWLYLHúLUH9 OL , V OH (valori unice în acest caz ).<br />
1
3. Se va determina tensiunea de prag a inversorului ca fiind valoarea tensiunii de intrare<br />
SHQWUX FDUH 9287 9,1 GDW GH LQWHUVHF LD GUHSWHL GH HFXD LH 9RXW 9LQ FX &67 Pentru<br />
DFHDVWDFHOPDLVLPSOXHVWHVIDFHPYL]LELOSHJUDILFúLHYROX LDSRWHQ LDOXOXLERUQHLSR]LWLYHD<br />
sursei de intrare (Trece->Add Trace... úL VH VHOHFWD 99,1 3XQFWXO GH LQWHUVHF LH VH<br />
SURLHFWHD]SHD[DRUL]RQWDOUH]XOWkQGWHQVLXQHDGHSUDg VP.<br />
4. 6HYDYL]XDOL]DHYROX LDFXUHQWXOXLGHDOLPHQWDUH, DD . Pentru aceasta cu: Trace, Add<br />
Trace..., VHLQWURGXFHvQOLQLDGHFRPDQG-I(VDD). Semnul minus este necesar pentru a da<br />
sensul real al curentului prin raportare la nodul de alimentare al inversorului.<br />
6HYDLGHQWLILFDYDORDUHDPD[LPDFXUHQWXOXLGHDOLPHQWDUH, DD PD[úLVHYDSUHFL]D<br />
SHQWUXFHYDORDUHDWHQVLXQLLGHLQWUDUHVHRE LQHDFHVWD<br />
5. 6H YRU SXQH vQ HYLGHQ RVHULHGHPULPL FDUDFWHULVWLFH DOH FLUFXLWXOXL FDUH<br />
FRQGL LRQHD]&67<br />
5.1. Parametrii tranzistoarelor (modelul MOSFET)<br />
3HQWUX vQFHSXW VH G RVFXUW GHVFULHUH D PRGXOXL vQ FDUH SRW PRGLILFD SDUDPHWULL<br />
PRGHOXOXL LPSOLFLW 6SLFH SHQWUX WUDQ]LVWRUXO XQLSRODU 026)(7 DVWIHO vQFkW PRGHOXO V ILH<br />
DVHPQWRUWUDQ]LVWRDUHORUXWLOL]DWHvQWHKQRORJLHPRQROLWLFODUHDOL]DUHDFLUFXLWHORU&026<br />
5.1.1 Tensiunea de prag a tranzistoarelor<br />
6H PRGLILF WHQVLXQLOH GH SUDJ SHQWUX FHOH GRX WUDQ]LVWRDUH SULQ HGLWDUHD PRGHOXOXL<br />
transistoarelor):<br />
- pentru M1 sintaxa noului model va fi:<br />
.model MbreakN_N1 NMOS VTO = 1V<br />
- pentru M2 sintaxa noului model va fi:<br />
.model MbreakP_P1 PMOS VTO = -1V<br />
6HREVHUYFDFHOHGRXWHQVLXQLVXQWVLPHWULFH6HUHSHWDQDOL]DúLVHGHWHUPLQDFHOHDúL<br />
PULPLFDvQFD]XODQWHULRUQLYHOHORJLFH, .. , curent de alimentare). Care este efectul asupra<br />
HYROX LHLFXUHQWXOXLGHDOLPHQWDUH"<br />
5.1.2 Dimensiunile geometrice ale canalului<br />
6H PRGLILFO LPHD :LGWK úL OXQJLPHD /HQJWK FDQDOXOXL FD YDORUL <strong>DE</strong>VROXWH FkW úL<br />
UDSRUWDOFHORUGRXPULPL:/):<br />
- pentru M1 sintaxa noului model va fi:<br />
.model MbreakN_N1 NMOS VTO=1V W=20E-6 L=5E-6<br />
- pentru M2 sintaxa noului model va fi:<br />
.model MbreakP_P1 PMOS VTO=-1V W=25E-6 L=5E-6<br />
$VLPHWULD FHORU GRX UDSRDUWH HVWH GDW GH QHFHVLWDWHD FRPSHQVULL YDORULL mai mici a<br />
FRQGXFWDQ HL SHQWUX WUDQ]LVWRUXO 3026 GHRDUHFH SHQWUX FHOH GRX PRGHOH DP SVWUDW DFHLDúL<br />
valoare pentru parametrul KP, KP=2E-5). 6HUHSHWDQDOL]DúLVHGHWHUPLQDFHOHDúLPULPL<br />
Care este efectul asupra CST ?<br />
5.2 (IHFWXOPRGLILFULLWHnsiunii de alimentare V DD<br />
3HQWUXDSXQHvQHYLGHQ HIHFWXOPRGLILFULLWHQVLXQLLGHDOLPHQWDUH9 DD asupra CST se<br />
va modifica succesiv V DD ODXUPWRDUHOH YDORUL 9 DD 9 úL 9 DD = 15V. Simultan se<br />
UHFRQILJXUHD]úLDQDOL]DGHFF (DC Sweep) modificându-se YDORDUHDILQDODVXUVHL9,1DVWIHO<br />
vQFkWHDVILHHJDOFX9 DD 3HQWUXILHFDUHGLQFHOHGRXVLWXD LLVHODQVHD]DQDOL]DúLSHED]D<br />
&67VHGHWHUPLQPULPLOHGHWHUPLQDWHDQWHULRUIn final se revine la VDD = 5V.<br />
2
II. Analiza de regim dinamic<br />
ScopXODQDOL]HLHVWHGHWHUPLQDUHDWLPSXOXLGHSURSDJDUHDOLQYHUVRUXOXLúLDXQRUIDFWRUL<br />
FDUHvOFRQGL LRQHD]5H]XOWDWHOHúLFRPHQWDULLOHVHYRUFHQWUDOL]DVXEIRUPDXQXLW<strong>DE</strong>HO6HYD<br />
XWLOL]DFLUFXLWXOLQL LDOFXXUPWRDUHOHREVHUYD LLPRGLILFUL<br />
- suUVD GLQ LQWUDUH VH YD vQORFXL FX R VXUV GHWLS6285&(938/6( DOH FUHL<br />
FDUDFWHULVWLFLYRUILGDWHvQFRQWLQXDUHVHSVWUHD]PRGHOHOHWUDQ]LVWRDUHORUXWLOL]DWHvQDQDOL]D<br />
de cc<br />
- VH LQWURGXFH XQ FRQGHQVDWRU GH VDUFLQ &/ 3 GH OD LHúLUH OD PDVîn paralel cu<br />
voltmetrul VOUT)<br />
1. Parametrii semnalului de tip impuls oferit de sursa din intrare se stabilesc la :<br />
-YDORDUHLQL LDOV1 = 0V;<br />
- valoarea impulsului de tensiune: V2 = 5V; (WUHEXLHVILHHJDOFX9'')<br />
- timpul de întârziere: TD = 20ns;<br />
-WLPSXOGHFUHúWHUH TR = 10ns;<br />
-WLPSXOGHFGHUH TF = 10ns;<br />
-O LPHDLPSXOVXOXL PW = 200ns;<br />
- perioada impulsului: PER = 450ns;<br />
<br />
Se stabilesc parametrii analizei de regim tranzitoriu - "Time Domain (Transient)":<br />
momentul de început alYL]XDOL]ULL6WDUWVDYLQJGDWDDIWHU0ns;<br />
-PRPHQWXOGHWHUPLQDUHDVLPXOULL5XQWRWLPH450ns;<br />
- pasul maxim de timp pentru simulare (Maximum step size): 10ns;<br />
2.6HODQVHD]DQDOL]D5XQ7UDQVLHQWúLYDUH]XOWDXQJUDILFSHFDUHVHYL]XDOL]HD]<br />
VLPXOWDQ FX DFHLDúL D[ D WLPSXOXL LQWUDUHD úL LHúLUHD FLUFXLWXOXL 99,1 99287 $úD<br />
cum s-DSURFHGDWODLQYHUVRUXOFXWUDQ]LVWRUELSRODUVHPVRDUGHWHUPLQtimpii de propagare<br />
t PLH úLt PHL .<br />
2EVHUYD LH&HLGRLWUDQ]LVWRULXWLOL]D L (model implicit) sunt elemente ideale din punct<br />
GHYHGHUHDOFRPXWD LHLWR LSDUDPHWULLGHQDWXUFDSDFLWLYGLQPRGHOXOXWLOL]DWDYkQGYDORDUH<br />
QXOYH]LPRGHOXOLPSOLFLWúLFRPHQWDULLOHGHODLQYHUVRDUHOH1026<br />
Parametrii respectivi descriu efectul XQRUFDSDFLW LGLVWULEXLWHHIHFWFDUHSRDWHILRE LQXW<br />
úL FX DMXWRUXO XQHL FDSDFLW L FRQFHQWUDWH OD LHúLUH vQ FD]XO QRVWUX &/ 3) Rezultatele sunt<br />
IRDUWHDVHPQWRDUH<br />
2.1 (IHFWXOFDSDFLW LLGHVDUFLQ<br />
6HPUHúWHFDSDFLWDWHDGHVDUFLQOD&/ 3)SHQWUXDOXDvQFRQVLGHUDUHúLHIHFWXOXQRU<br />
LQWUUL GH LQYHUVRU &026 FRPDQGDWH GH R DVWIHO GH LHúLUH 6H UHSHW DQDOL]D úL VH GHWHUPLQ<br />
timpii de propagare. Care este efectul asupra timpilor de propagare ?<br />
2.2 Efectul tensiunii de alimentare<br />
3VWUkQGDFHLDúLVDUFLQFDSDFLWLYVHPRGLILFWHQVLXQHDGHDOLPHQWDUHOD9'' 9úL<br />
UHVSHFWLY9'' 9DWHQ LHVHPRGLILFúL9SHQWUXVXUVDGLQLQWUDUHDVWIHOvQFkWVILH<br />
HJDOFX9''3HQWUXILHFDUHGLQDFHVWHVLWXD LLVHUHSHWDQDOL]DúLVHGHWHUPLQWLPSLLGH<br />
propagare. Care este efectul asupra timpilor de propagare ?<br />
3