1 - 宇宙線研究室 - 京都大学

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1. する.その 2. の 3. 新エミッタのコレクタにたな結電果結子 , 果の存電型 ,エミッタの供子在流 NPN 給はベースしていた空がないので,コレクタ流乏れない.1. 層側電ベースに子移は,プラスの動移し,ベースのホールと動コレクタは中停側の止へ電する. 移子動はする.ベース(エミッタ)から停止結合 . 空乏層電ホールを子形成型トランジスタプレーナに 2. 3. ことになり, 4. 向ベースには電コレクタにはベースをコレクタ-エミッタかって子の中一引再の部き結大全新はベースからのホールと NPN 寄合部体たにホールがせられる. する分としてコレクタ-エミッタの間電子通流はコレクタへじてエミッタからはベースに流れ流ホールが込れむため,エミッタ型込再む流トランジスタ(NPN)の結れ合間込するが,ベースは新にむむ. たな大電きな流電に中子電比の供流例電給がする. 子流薄がベース行れる. いのでわれる構造96 7 (2 )7.2 7.2.1 () 7.5: () µm 7.2.2 トランジスタPNP NPN 7.6: 7.2.3 ?????? () I 0[mA] R 0[V] V 0 (V, I) = (1.5[V], 0[mA]) 0[V] R = I = V 0 /R = 1.5[V]/250[Ω] = 6[mA] (V, I) = (0[V], 6[mA])
1.5VVV RI 250ΩI動作点 V07.2. 97 2 ?? (V, I) = (1.0[V], 2.0[mA]) V 0 = RI + V (7.11)I = V 0 − V(7.12)R 7.7: 7.2.4 ?? 1 I B I E I C ?? β 200 I B V CE I C I B ≪ I C , I E (7.13)I C ≃ I E (7.14)I C = βI B , β = 200 (7.15)- I C − V CE V 0 = R C I C + V CE + R E I E = R C I C + V CE + R E I C (7.16)V CE = V 0 − (R C + R E ) I C = 6.0[V] − 500[Ω]I C (7.17)V CE = 0 →V 0I C = =6[V] = 12[mA]R C + R E 500[Ω](7.18)I C = 0 → V CE = V 0 = 6[V] (7.19)??I C − V CE I B ?? I B − V BE
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1 http://www-cr.scphys.kyoto-u.ac.j
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6 1 : (2 )1.2 1.2.1 GNDCOMMON=GN
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8 1 : (2 )1.2.6 1.6: C ?? (??)
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I 1.10: V10 1 : (2 ) I |I| ω
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12 1 : (2 ) 1.12: OS-CON () ()
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14 1 : (2 ) 1.15: p n (carrie
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16 1 : (2 ) 1.19: pn () 1.20:
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18 1 : (2 )1.2.11 FET-FET MOS-FE
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20 1 : (2 )+- 1.27: 1.3 1.28: 1
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22 1 : (2 ) 15W [dB] = G V = 2
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24 2 L, C, R (2 )˜ã = a 0 + ia
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26 2 L, C, R (2 ) V (t) I(t) V
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28 2 L, C, R (2 )1.51VI0.5t-2 -1
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30 2 L, C, R (2 ) 2.4: R L C
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32 2 L, C, R (2 ) 2.6:
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34 2 L, C, R (2 ) ω 0 = 1/ √
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36 2 L, C, R (2 )1time10 11 12 1
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38 3 (1 )∫ t0∫ t0d 2 f(t)dt
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40 3 (1 ) v 0 · step(t) =⎧⎨
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42 3 (1 )VIN+0.000 pV-VPULSE+ PL
Page 45 and 46: 455 (2)5.1 ( MHz ) 5.1.1 a b L =
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Page 49 and 50: 5.2. 495.2.2 ±Q r E r V E r =Q
Page 51 and 52: 5.2. 51 |R L | ≪ |iωL| |G C |
Page 53 and 54: 5.2. 535.2.5 5.4: √µ0ε 0= 120
Page 55 and 56: 5.2. 55+z V + z = 0 −z V −
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Page 59 and 60: 5.2. 595.2.9 : TEM(Transverse Elec
Page 61: 5.4. 615.3.1 ()2 XXX GND XXX 5.
Page 64 and 65: 64 6 (2.5 )V out = A(V + − V
Page 66 and 67: 66 6 (2.5 ) (??) AR 2R 2V out =
Page 68 and 69: 68 6 (2.5 )6.2.2 OpAmp V out =
Page 70 and 71: 70 6 (2.5 )6.2.4 /V 0 ≡ V −
Page 72 and 73: 72 6 (2.5 )RF5E2ΩCF1E-6F+ -VPIN
Page 74 and 75: 74 6 (2.5 )6.2.7 RC RC 2 2 1
Page 76 and 77: 76 6 (2.5 ) 6.22: LM741 (page2)
Page 78 and 79: 78 6 (2.5 ) 6.24: LM741 (page4)
Page 80 and 81: 80 6 (2.5 )6.3.4 (V/µsec) GB
Page 82 and 83: 82 6 (2.5 )6.3.6 (Advanced) 0
Page 84 and 85: 84 6 (2.5 )6.4 6.4.1 OpAmp FET
Page 86 and 87: 86 6 (2.5 )6.4.3 ??[V1V out =
Page 88 and 89: 88 6 (2.5 )6.4.4 R 1 () V ref =
Page 90 and 91: 90 6 (2.5 )6.4.6 RC (Advanced)
Page 93 and 94: 937 (2)7.1 AC ?? 2 DC AC DC V AC
Page 95: 7.1. AC 95R122E3ΩVIN+0.000 pV-VS
Page 99 and 100: 7.3. 991) 0.6 ∼ 0.7V ON/OFF 0.
Page 101 and 102: 7.3. 101 7.10: 2SC2458 (page2)
Page 103 and 104: 7.3. 1037.3.2 VCC+ 3VRL10E3ΩVIN+0
Page 105 and 106: 7.3. 105 I E V E R E I E = V E= 2
Page 107 and 108: 7.3. 107transient0.2time0 1 2 3 4
Page 109 and 110: 7.3. 109transient50time0 1 2 3 4 5
Page 111 and 112: 7.3. 111RC10E3Ω+ C161E-7F-+ C1710
Page 113 and 114: 7.3. 1136) AC transient20time0 1 2
Page 115 and 116: 7.4. 1157.3.11 (Advanced) DC NPN
Page 117 and 118: 7.4. 1177.4.2 MHz nsec () ??RC51
Page 119 and 120: 7.4. 119R C 5.1kΩ R E R 3 500
Page 121 and 122: 7.4. 121C 7 C 8 AC v B2 = 02) Q2S
Page 123 and 124: 7.6. (Advanced) 123transient3time0
Page 125: 7.7. 1257.7
Page 129: 12999.1 9.1.1 9.1.2 9.1.3 9.2 9.2.1
Page 133: 13311ADDA11.1 ADC 11.1.1 11.1.2 11.
Page 137: 1371313.1 13.2 13.3 13.3.1 13.3.2 1
Page 141: 141 6. II, , , 2001 4 , () , CQ
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1 - 宇宙線研究室 - 京都大学

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