CV Jose Menendez - Department of Physics and Astronomy ...

(1986).
121. J. Menéndez, L. Viña, M. Cardona, and E. Anastassakis, "Resonance Raman Scattering in
InSb: Deformation Potentials and Interference Effects at the E1 Gap," Phys. Rev. B 32, 3966-
3973 (1985).
122. A.K. Sood, J. Menéndez, M. Cardona, and K. Ploog, "Second -order Raman Scatering by
Confined Optical Phonons and interface Vibrational Modes in GaAs-AlAs Superlattices, Phys.
Rev. B 32, 1412-1414 (1985).
123. A.K. Sood, J. Menéndez, M. Cardona, and K. Ploog, "Interface Vibrational Modes in GaAs-AlAs
Superlattices, Phys. Rev. Lett. 54, 2115-2118 (1985).
124. A.K. Sood, J. Menéndez, M. Cardona, and K. Ploog, "Resonance Raman Scattering by
Confined LO and TO Phonons in GaAs-AlAs Superlattices," Phys. Rev. Lett. 54, 2111-2114
(1985).
125. J. Menéndez, M. Cardona, and L.K. Vodopyanov, "Resonance Raman Scattering by LO-
Phonons in CdxHg1-xTe at the E0+∆0 Gap," Phys. Rev. B 31, 3705-3711 (1985).
126. J. Menéndez and M. Cardona, "Interference Effects: A Key to Understanding Forbidden Raman
Scattering by LO-Phonons in GaAs," Phys. Rev. B 31, 3696-3704 (1985).
127. J. Menéndez and M. Cardona, "Allowed and Forbidden Scattering by LO-Phonons: Interference
Effects," Pure and Appl. Chem. 57, 181 (1985).
128. J. Menéndez and M. Cardona, "Temperature Dependence of the First-order Raman Scattering
by Phonons in Si, Ge, and a-Sn: Anharmonic Effects," Phys. Rev. B 29, 2051-2059 (1984).
129. J. Menéndez and H. Höchst, "Study of the Phase Transition in Heteroepitaxially Grown Films of
α-Sn by Raman Spectroscopy," Thin Solid Films 111, 375-379 (1984).
130. J. Menéndez and M. Cardona, "Interference between Allowed and Forbidden Raman Scattering
by Longitudinal-Optical Phonons in GaAs," Phys. Rev. Lett. 51, 1297-1299 (1983).
CONFERENCE PROCEEDINGS
131. G. Sun, J.B. Khurgin, J. Menéndez, R.A. Soref, "Group-IV quantum cascade laser operating in
the L-valleys," 2008 Quantum Electronics and Laser Conference (QELS), 2008, p. 2
132. G. Sun, J.B. Khurgin, J. Menéndez, R.A. Soref, "Design of GeSiSn/Ge quantum cascade laser,"
2008 5 th IEEE International Conference on Group IV Photonics (GFP), 2008, p 273-5.
133. J. Kouvetakis, V.R. DʼCosta, Y-Y. Fang, J. Tolle, A.V.G. Chizmeshya, J. Xie and J. Menéndez:
“Independently tunable electronic and structural parameters in ternary Group IV
semiconductors for optoelectronic applications,” in JSPS Proceedings, The 5th International
Conference on Advanced Science and Technology of silicon materials, pp 352-356 (2008).
134. R. Soref, J. Kouvetakis, and J. Menéndez: Advances in SiGSn/Ge technology, in Group IV
Semiconductor Nanostructures, edited by Christophe Delerue, Leonid Tsybeskov, David J.
Lockwood, Masakazu Ichikawa, and Anthony W. van Buuren (Mater. Res. Soc. Symp. Proc.
958, Warrendale, PA, 2007.
135. J. Tolle, R. Roucka, V. DʼCosta, J. Menéndez, A. Chizmeshya, J. Kouvetakis, “Sn-based group-
IV semiconductors on Si: new infrared materials and new templates for mismatched epitaxy”,
Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic
Applications, Materials Research Society Symposium Proceedings 891, 2006, p 579-84.
136. C. S. Cook, V. D'Costa, J. Kouvetakis,S. Zollner, and J. Menéndez, ”Compositional
Dependence of Critical Point Transitions in Ge1-xSnx alloys,” in Proceedings of the 27th