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Correcting Misconceptions on Electronics: Effects of a simulation ...

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M25<br />

The output current passing through an element in a circuit is less than the input<br />

current.<br />

M26 C<strong>on</strong>fusi<strong>on</strong> about c<strong>on</strong>cepts <strong>of</strong> basic series-parallel circuits.<br />

M27<br />

The current passing through a zener diode is equal to the current passing<br />

M28<br />

through a load resistance.<br />

No current passes through a load resistance when the breakdown voltage is<br />

applied to a zener diode.<br />

Twenty-<strong>on</strong>e <strong>of</strong> the 28 misc<strong>on</strong>cepti<strong>on</strong>s about the c<strong>on</strong>cepts <strong>of</strong> a diode listed in Table 1 are related to semic<strong>on</strong>ductor<br />

characteristics, bias types, elementary models, and applicable circuits. Four <strong>of</strong> the remaining seven misc<strong>on</strong>cepti<strong>on</strong>s<br />

are attributable to incorrect analyses <strong>of</strong> basic electric current, voltage, and circuit behavior (i.e., “The output current<br />

passing through an element in a circuit is less than the input current”, “Incorrect definiti<strong>on</strong> <strong>of</strong> the average output<br />

voltage <strong>of</strong> a rectifier”, “Incorrect definiti<strong>on</strong> <strong>of</strong> the RMS (root mean square) output voltage <strong>of</strong> a rectifier”, and<br />

“C<strong>on</strong>fusi<strong>on</strong> about c<strong>on</strong>cepts <strong>of</strong> basic series-parallel circuits”), while the last three are ascribed to the interacti<strong>on</strong><br />

between fundamental c<strong>on</strong>cepts <strong>of</strong> current (or voltage) and diode (i.e., “No current in parallel resistances when a<br />

diode is c<strong>on</strong>ducting”, “The current passing through a zener diode is equal to the current passing through a load<br />

resistance”, and “No current passes a through a load resistance when the breakdown voltage is applied to a zener<br />

diode”). It can be seen that past misc<strong>on</strong>cepti<strong>on</strong>s directly affect not <strong>on</strong>ly the learning <strong>of</strong> relevant c<strong>on</strong>cepts but also<br />

result in further misc<strong>on</strong>cepti<strong>on</strong>s as well as learning issues due to interacti<strong>on</strong>s.<br />

C<strong>on</strong>ceptual-change learning activity<br />

The c<strong>on</strong>ceptual-change activities in this system are designed to create c<strong>on</strong>ceptual c<strong>on</strong>flict scenarios and support<br />

c<strong>on</strong>ceptual change through the three POE strategy stages. The activities in these three stages are described in<br />

subsecti<strong>on</strong>s below.<br />

Predicti<strong>on</strong><br />

All misc<strong>on</strong>cepti<strong>on</strong>s are listed by the system in which a learner is able to click <strong>on</strong> the corresp<strong>on</strong>ding butt<strong>on</strong>s to enter a<br />

page for the predicti<strong>on</strong> phase <strong>of</strong> the c<strong>on</strong>ceptual-change scenario. The system provides a learner with <strong>on</strong>e questi<strong>on</strong><br />

that focuses <strong>on</strong> the given misc<strong>on</strong>cepti<strong>on</strong>, and that is the first stage to guide learners to discover their dissatisfacti<strong>on</strong><br />

with existing c<strong>on</strong>cepts. During a predicti<strong>on</strong> activity, the questi<strong>on</strong> and the corresp<strong>on</strong>ding possible answers are<br />

provided by the system. For example, the questi<strong>on</strong> for M4 was “How is a diode’s depleti<strong>on</strong> regi<strong>on</strong> produced?”, and<br />

the two possible answers are “Majority carriers in the P- and N-type semic<strong>on</strong>ductors produce a diode’s depleti<strong>on</strong><br />

regi<strong>on</strong>” and “Minority carriers in the P- and N-type semic<strong>on</strong>ductors produce a diode’s depleti<strong>on</strong> regi<strong>on</strong>.” In the<br />

predicti<strong>on</strong> phase <strong>of</strong> the POE c<strong>on</strong>ceptual-change strategy, a learner needs to answer the questi<strong>on</strong> and is encouraged to<br />

deliberate any critical point affecting misc<strong>on</strong>cepti<strong>on</strong>s about the observati<strong>on</strong> activities.<br />

Observati<strong>on</strong><br />

The objective in the observati<strong>on</strong> phase is to allow a learner to visualize abstract c<strong>on</strong>cepts by means <strong>of</strong> visualizati<strong>on</strong><br />

<strong>of</strong> a computer simulati<strong>on</strong>. As shown in Fig. 1, how minority carriers or majority carriers are generated in P- and Ntype<br />

semic<strong>on</strong>ductors is illustrated in the system’s dem<strong>on</strong>strati<strong>on</strong> al<strong>on</strong>g with narrati<strong>on</strong>. In general, the generati<strong>on</strong> <strong>of</strong><br />

majority carriers rather than minority carriers is emphasized by most instructi<strong>on</strong> despite both carriers simultaneously<br />

existing in P- and N-type semic<strong>on</strong>ductors. To ensure that the minority electr<strong>on</strong>-hole pair is substantially understood<br />

by a learner, how both majority and minority carriers are generated is displayed visually by our system. A learner can<br />

click <strong>on</strong> “Next” <strong>on</strong> the screen to go to a follow-up learning activity after comprehending how minority and majority<br />

carriers are generated by repeated observati<strong>on</strong> and deliberati<strong>on</strong>.<br />

215

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