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V. PHOTOLUMINESCENCE IN a-Sii_xCx:H<br />

5.1 Variation of parameters with carbon content<br />

5.2 CW PL in a-Sii_xC:,:H films<br />

5.3 PL decays in a-Sii-^CiiH films<br />

5.4 Discussion<br />

VI. PHOTOLUMINESCENCE IN a-SiN^iH<br />

6.1 Variation of parameters with nitrogen content<br />

6.2 CW PL in a-SiN:,:H films<br />

6.3 PL decays in a-SiN^iH films<br />

VII. ELECTRIC FIELD QUENCHING OF CW PL IN a-Si:H<br />

7.1 Results and Interpretation<br />

7.2 Discussion of Results<br />

Vin. CONCLUSIONS<br />

8.1 Recommendations for further research<br />

REFERENCES<br />

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