Nanothermoelectrics - Lund Circuit Design Workshop

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Epitaxially grown nanowires, e.g. InAs/InP(Lars Samuelson group, <strong>Lund</strong>)CBETBAs (group-V)TMIn (group-III)InAsInPSubstrate surfaceInAs (111)BAnn Persson, Linus Fröberg
Sharp interfaces(Imaging: Reine Wallenberg & Magnus Larsson, nCHREM, <strong>Lund</strong>)HAADF: High-Angle Annular Dark-Field (in STEM)
Page 1: Nanothermoelectrics with nanowiresE
Page 7 and 8: What makes a good thermoelectric ?H
Page 9: Why nanowires?Phonons scatter off s
Page 13 and 14: Advanced structuresVertical field e
Page 15 and 16: Thermal conductancein WZ, ZB InAs n
Page 17 and 18: Fundamental elements of thermoelect
Page 19 and 20: The origin of a thermovoltage (open
Page 21 and 22: Fundamental efficiency limit of the
Page 23 and 24: Power generation or Refrigerationne
Page 25 and 26: Performance of a thermoelectric nan
Page 27 and 28: Thermal and electrical biasing5 nm
Page 29 and 30: Thermoelectric power productionPowe
Page 31 and 32: Quantum-dot thermometryCurrent resp
Page 33 and 34: Why do electrons in the drain heat
Page 35 and 36: Electronic ZT of quantum dots (mode
Page 37 and 38: Efficiency at maximum powerCurzon-A
Page 39: ContributorsStudents & PostdocsEric

Nanothermoelectrics - Lund Circuit Design Workshop

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