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Isolation & Return Loss (dB)Insertion LossSPDT High Isolation RF-MEMS Switch, DC to 20 GHzRMSW221Typical RF Performance00Absolute Maximum Ratings-5-10-15-20-0.1-0.2-0.3-0.4Maximum Temperature(10 seconds)(120 seconds)Maximum Voltage, Gate-Source290 o C250 o C+/- 110 V-25-0.5Maximum Voltage, Drain-Source+/- 100 V-30-0.6-35-40-45-50-10 5 10 15 20GHzRETURN LOSS(dB)ISOLATION(dB)INSERTION LOSS (dB)- Measured characteristics between RF ports Drain and Source 1. Similar characteristicswere measured between Drain and Source 2.- Measurement results include bond wires.Recommended Application-0.7-0.8-0.9Static sensitivityThis device has an ESD (HBM) sensitivity of100 V. Use proper ESD precautions whenhandling. Please refer to the application noteentitled “Test and Handling of SPST RF-MEMSSwitches” for more information.1. Figure shows one half of the SPDT switch. The Drainterminal is common to both halves.2. Resistors R S and R D (40 k-100 k) or inductors L Sand L D should be used to provide a path to DCGround from Source and Drain.3. V G may be of either polarity.4. V G rise-time should be at least 10 s for optimallifetime.1. Please refer to the application note entitled “Test andHandling of SPST RF-MEMS Switches” for moreinformation. Contact us for driver solutions.Nominal Device Dimensions180 m175 m100 mDie AssemblyThe gold backside-metallization on the die is designed tobe mounted with electrically conductive silver epoxy, orwith a lower temperature solder which does not consumegold. Bond pads on the die are made of gold. Ballbondsshould be utilized to attach gold or aluminum 1mil wires. Please refer to the application note entitled“Test and Handling of SPST RF-MEMS Switches” formore information.1660 m400 m650 μmBond PadsRMI 20071960 mPlease contact us for a footprint in .gds or .dxf format.250 μmBackside ground (gold)