12.07.2015 Views

Linde in Solar. - Linde Gas

Linde in Solar. - Linde Gas

Linde in Solar. - Linde Gas

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

08 <strong>L<strong>in</strong>de</strong> <strong>in</strong> <strong>Solar</strong>The <strong>in</strong>dustry cont<strong>in</strong>ues to build capacityand make advances <strong>in</strong> crystall<strong>in</strong>e silicon.Crystall<strong>in</strong>e silicon solar cells are currently used <strong>in</strong> more than 80% of worldwide solar <strong>in</strong>stallations.Applications are primarily consumer based (on-grid) <strong>in</strong>stallations, but also provide a flexible means ofsupport<strong>in</strong>g underdeveloped (off-grid) locations where grid power is unavailable. Crystall<strong>in</strong>e silicon celloutput is expected to cont<strong>in</strong>ue to grow at 20-30% year on year for the next several years.Silicon cost represents 60% of the overall c-Si cell manufactur<strong>in</strong>g costs, although this is expected to decl<strong>in</strong>eas new global Si capacity comes on stream. The process materials component cost (7%) plays a critical role<strong>in</strong> enabl<strong>in</strong>g higher cell efficiencies and lower production costs.Wafer Fabrication PlantHF/Nitric etch mixes pc-SiNaOH or KOH mc-Si + IPAHF/Nitric etch mixes pc-SiNaOH or KOH mc-Si & IPARaw MaterialProcess<strong>in</strong>gPoly & MonoSi GrowthEtch & WashSawWash &SeparateWaferCrystall<strong>in</strong>e Cell Critical Manufactur<strong>in</strong>g StepsHF/Nitric etch mixes multi c-SiKOH+IPA or NaOH+IPA mono c-SiH 2 0 2 + HCl metallic removalPOCl 3 diffusionH 3 PO 4 mist + thermalEthanol + H 3 PO 4 mixO 3 /dilute HF (RENA)HF + hot airCF 4 /0 2 plasma etchHF or dilute HF etchHF +HNO 3 (multi c-Si)or YAG Laser at end of l<strong>in</strong>eWafersWire Saw Damage& Texture EtchIon Dop<strong>in</strong>g& DiffusionPSGRemovalEdgeIsolationRemovalPre-ARCDepositionCleanPassivation& ARCLayer (SiN)BackReflectorContactMetalsCo-Fir<strong>in</strong>gFurnaceModuleAssemblyHCl + H 2 0HF + H 2 OSC1 clean (H 2 O 2 + NH 4 OH)SC2 clean (H 2 0 2 +HCl)SiH 4 /NH 3 /H 2 PECVDorN 2 Si PVD Sputter<strong>in</strong>gWet Chemistry Application Process<strong>Gas</strong> Application Process

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!