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Comprehensive Change Note Summary for Council Regulation

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Control Entry or Regime and DescriptionDefinition Heading Year3A001e.1.b. Edit 10 Sub-entry amended.3A002.b. WA09 Sub-entry deleted and control moved to3A001.b.11.3A002.c.1. & 2. WA10 Parameters in sub paragraphs <strong>for</strong> radiofrequencysignal analysers amended3A002.c.3. WA10 New sub paragraph <strong>for</strong> signal analysers having afrequency exceeding 70 GHz; existing entryrenumbered 3A002.c.4.3A002.c.4. WA10 Parameter in sub paragraph <strong>for</strong> dynamic signalanalysers amended3A002.c. <strong>Note</strong> WA10 <strong>Note</strong> amended to refer to 3A002.c.4. due toaddition of new sub paragraph and subsequentrenumbering of original sub paragraph3A002.d.1. WA10 Sub paragraph <strong>for</strong> frequency synthesised signalgenerators rewritten3A002.d.2. WA10 Parameters in sub paragraph <strong>for</strong> frequencysynthesised signal generators amended3A002.d.3. WA10 Sub paragraph <strong>for</strong> frequency synthesised signalgenerators amended3A002.d.3.d. WA10 ‘Or’ deleted from the end of the sub-paragraph3A002.d.3.e. WA10 Sub paragraph <strong>for</strong> frequency synthesised signalgenerators rewritten and parameters amended3A002.d.3.f. WA10 New sub paragraph <strong>for</strong> frequency synthesisedsignal generators3A002.d.4. WA10 Sub paragraph <strong>for</strong> frequency synthesised signalgenerators amended to include upper limit of 70GHz3A002.d.5. WA10 New sub paragraph <strong>for</strong> frequency synthesisedsignal generators exceeding 70 GHz3A002.e., 1., & 2. WA09 Sub-entry <strong>for</strong> network analysers amended toinclude 2 new sub-paragraphs.3A228.c. Edit09 Sub-entry <strong>for</strong> switching devices amended toavoid double coverage.3B001.c.1. & 2. WA09 Sub-entry <strong>for</strong> anisotropic plasma dry etchingequipment amended to include 2 new subparagraphs.3B001.e., <strong>Note</strong> & Tech<strong>Note</strong>WA09Sub-entry <strong>for</strong> automatic loading wafer handlingsystem and associated <strong>Note</strong> amended and newTechnical <strong>Note</strong> added.3B001.d.1. & 2. WA10 Parameter in sub paragraphs <strong>for</strong> plasmaenhanced chemical vapour deposition equipmentamended3B001.f.1.b. & Tech<strong>Note</strong>WA10Parameter in sub paragraph and Tech <strong>Note</strong> <strong>for</strong>lithography equipment amended; Sub paragraphand Tech <strong>Note</strong> amended to include MRFacronym3B001.f.2. WA10 Parameter in sub paragraph <strong>for</strong> imprintlithography equipment amended3E001 <strong>Note</strong> 2 & Tech<strong>Note</strong>WA10 Parameter in paragraph a of <strong>Note</strong> 2 amended;Paragraph b of <strong>Note</strong> 2 rewritten; Tech <strong>Note</strong>Export Control Organisation Page 6 25 May 2012

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