Monday, June 1, 2009 - CLEO

Room 340 Room 341 Rooms 328-329CLEOCMPP • Novel THz Sources—ContinuedCMQQ • Optical DeviceFabrication—ContinuedCMRR • VCSELs II—ContinuedCMPP5 • 4:45 p.m.Pump Beam Recycling for an Enhancement ofthe Output Power of Terahertz-Wave ParametricOscillator, Tomofumi Ikari 1 , Hiromasa Ito 1 , DongHo Wu 2 ; 1 RIKEN Sendai, Japan, 2 NRL, USA.We have implemented a recycled pump beamtechnique on a terahertz parametric oscillator(TPO). The TPO with a recycled beam producesa terahertz beam that is several times stronger thanthat of the conventional TPO.CMQQ5 • 4:45 p.m.Fabrication of Antireflection Nanostructures onGaAs by Holographic Lithography for DeviceApplications, Young Min Song 1 , Si Young Bae 1 , JaeSu Yu 2 , Yong Tak Lee 1 ; 1 Gwangju Inst. of Science andTechnology, Republic of Korea, 2 Kyung Hee Univ.,Republic of Korea. We demonstrate the fabricationof antireflection nanostructures on GaAs usingholographic lithography. Measured results are ingood agreement with the calculated values using aRCWA, effectively suppressing the surface reflectionover visible and near-infrared ranges.CMRR5 • 4:45 p.m.Optically-Pumped Circularly-Polarized Lasingin a (110)-Oriented VCSEL Based on InGaAs/GaAs QWs, Hiroshi Fujino, Satoshi Iba, ToshiyasuFujimoto, Shinji Koh, Hitoshi Kawaguchi; Nara Inst.of Science and Technology, Japan. We demonstratedcircularly-polarized lasing in a (110)-orientedVCSEL based on InGaAs/GaAs QWs by opticalpumping for the first time. High degree of circularlypolarization (0.94) was achieved reflectinglong spin relaxation times in (110) QWs.CMPP6 • 5:00 p.m.Broadband and High Power Monocycle TerahertzPulse Generation by χ (2) Cascaded Processesin LiNbO 3 , Mukesh Jewariya 1 , Masaya Nagai 1,2 ,Yuki Ichikawa 3 , Hideyuki Ohtake 3 , Toshiharu Sugiura3 , Yuzuru Uehara 3 , Koichiro Tanaka 1,4 ; 1 Dept.of Physics, Kyoto Univ., Japan, 2 JST, Japan, 3 AisinSeiki Co., Ltd., Japan, 4 Inst. for Integrated Cell-Material Science, Kyoto Univ., Japan. We proposea novel technique for the generation of high powermonocycle terahertz pulse beyond excitation pulsewidth limitation. When intense THz electric fieldgenerated by optical rectification lies in EO crystal,optical pulse gets modulated.CMQQ6 • 5:00 p.m.Plasmonic-Coupled Nanostructure for ImprovedSurface Plasmon Resonance Biosensing,Haiping Matthew Chen, Lin Pang, YeshaiahuFainman; Univ. of California at San Diego, USA. Athree-dimensional (3-D) composite nanostructurewith enhanced normal electrical field is simulatedand fabricated for surface plasmon resonance(SPR) biosensing. The device is used to measurespecific binding events of different proteins.CMRR6 • 5:00 p.m.Ultrafast Spin Dynamics in Spin-PolarizedVertical-Cavity Surface-Emitting Laser Devices,Nils C. Gerhardt 1 , Stephan Hoevel 1 , Mingyuan Li 1 ,Hendrik Jaehme 1 , Martin R. Hofmann 1 , ThorstenAckemann 2 , Andrea Kroner 3 , Rainer Michalzik 3 ;1Photonics and Terahertz Technology, Ruhr-Univ.Bochum, Germany, 2 Dept. of Physics, Univ. ofStrathclyde, UK, 3 Inst. for Optoelectronics, Univ.of Ulm, Germany. Spin-polarized lasers offer newencouraging possibilities for future devices. Wecompare time-resolved luminescence measurementswith theoretical models for spin dynamicsin spin-polarized lasers and demonstrate ultrafastpolarization switching during one short singlemodelaser pulse.CMPP7 • 5:15 p.m.Enhancement of Room-Temperature TerahertzEmission from a Double Grating-Gate Plasmon-Resonant Emitter, A. El Fatimy, Y. Tsuda, T. Komori,A. El Moutaouakil, H. Horiike, T. Suemitsu,T. Otsuji; Res. Inst. of Electrical Communication,Tohoku Univ., Japan. Terahertz photomixing inPlasmon-resonant emitter was investigated. Theself-oscillation excited by a dc-current (around2THz), was reinforced by the differentialfrequencyexcitation (2.2THz), resulting in theemission enhancement. This indicates a possibilityof injection-locked oscillation.CMQQ7 • 5:15 p.m.Ultra-Smooth Lithium Niobate Single CrystalPhotonic Micro-Structures, Sakellaris Mailis 1 ,Yongjun J. Ying 1 , Collin L. Sones 1 , Anna C. Peacock 1 ,Florian Johann 2 , Elisabeth Soergel 2 , Robert W. Eason1 , Mikhail N. Zervas 1 ; 1 Optoelectronics Res. Ctr.,Univ. of Southampton, UK, 2 Inst. of Physics, Univ.of Bonn, Germany. Thermal treatment of microstructuredlithium niobate, at temperatures closeto the Curie point, induces preferential surfacemelting and re-crystallization. This process yieldsultra-smooth single crystal superstructures suitablefor fabrication of low scattering loss photonicmicro-components.CMRR7 • 5:15 p.m.Red and UV Generation Using Frequency-Converted GaInNAs-Based Semiconductor DiskLaser, Jussi Rautiainen, Antti Härkönen, Ville-Markus Korpijärvi, Janne Puustinen, Lasse Orsila,Mircea Guina, Oleg Okhotnikov; OptoelectronicsRes. Ctr., Tampere Univ. of Technology, Finland.We report on the intracavity frequency-doublingof a GaInNAs/GaAs disk laser. The laser operatedat 1220 nm and delivered 4.6 W of power at ~610nm. The red emission was further frequencydoubledto 305 nm.Monday, June 16:00 p.m.–7:30 p.m. CLEO Plenary Session, Baltimore Convention Center, Ballrooms III-IVNOTES________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________Concurrent sessions are grouped across four pages. Please review all four pages for complete session information.79