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Problem with EUVL: throughput• Targetted for 32 nm node (Y2013)• Uses 13 nm photons.• Requires multilayer mask• Issues• Defects on mask easy to print• A high power EUVL photon sourceis yet to be found.• Photons have high energy, thereforelow counts Line edge roughness.• Chemically-Amplified Resists areneeded (CAR)2004Ž9ž21 William M. Tong 16
Acid diffusion limits linewidth to ~35 nmExposedareaSource: Postnikov, , S. V. et al., “ A study of rosolution limits due to intrinsic bias in chemicallyamplified photoresists,” to appear in JVST B. (Grant Willson, UT Austin)2004Ž9ž21 William M. Tong 17
Page 1 and 2: Nanoimprint lithographyat Hewlett-P
Page 3 and 4: Nanotechnology research @ hpQuantum
Page 5 and 6: Nanoimprinted crossbar molecular sw
Page 7 and 8: Sub-50 nm hp resolution achievedG.
Page 9 and 10: Photonic crystal waveguide successf
Page 11 and 12: Successful sensing of DNA oligonucl
Page 13 and 14: Moore’s LawIncrease in processor
Page 15: Photolithography is hitting a brick
Page 19 and 20: Patterning OPC features requires un
Page 21 and 22: Nanoimprint lithography can achieve
Page 23 and 24: Summary• Overview of hp’s portf

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