PIN Photodiode Based X and Î³ Ray Detectors

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Outline • Si-PIN photodiodes Structure Principle of Operation • Design Considerations? Signal Size Amplification (Transimpedence amplifier) Noise • Prototype • Future Plans First Signal Measurements PIN Photodiode Based X and γ Ray Detectors – p.2/44
Si-PIN Photodiode Structure N-type silicon is the starting material. A thin P layer is formed on the front surface (ion implementation of boron). Thickness of P is determined by the wavelength of the radiation to be detected. Intirinsic semiconductor is grown between the n and p layers of the junction. Metal contacts to the front (anode) and entire back surfaces (cathode) are made. N + is needed to improve the ohmic contact. Anti-reflection coating material : Silicon nitride, silicon monoxide/dioxide Thickness of the coating is optimized for particular wavelength. SiO2 Antireflection Coating (Thermally Grown) + PN Junction Edge P Active Area Front contact + N Back Diffusion Depletion Region Silion Material Back Metallization N−Type PIN Photodiode Based X and γ Ray Detectors – p.3/44
Page 1: PIN Photodiode Based X and γ Ray D
Page 5 and 6: Interaction of photons They can ser
Page 7 and 8: Simple Calculation A Cs 137 = 10 µ
Page 9 and 10: How we measure this small current?
Page 11 and 12: How we measure this small current?
Page 13 and 14: PhotoVoltaic Mode Do not let any vo
Page 15 and 16: Feedback Resistor To get signal Add
Page 17 and 18: What is the reason? −10V − + Ou
Page 19 and 20: Bias current of OP-AMP In reality,
Page 21 and 22: Which OP-AMP ? Type en(nV/ √ Hz)
Page 23 and 24: Noise • Flicker noise : It is 1/f
Page 25 and 26: Noise due to the peripherals e 1 R
Page 27 and 28: Vbias Construction V ref − Ultra
Page 29 and 30: Hamamatsu 1223-01 PIN Photodiode Ba
Page 31 and 32: Feed Forward Compensation No feedba
Page 33 and 34: Construction PIN Photodiode Based X
Page 35 and 36: Signals from Sources mV 600 400 200
Page 37 and 38: Amplifier TDA2030 PIN Photodiode Ba
Page 39 and 40: mV mV 400 300 200 100 0 -100 -200 T
Page 41 and 42: Amplitude 80000 70000 60000 50000 4
Page 43 and 44: References Noise Analysis in Operat

PIN Photodiode Based X and Î³ Ray Detectors

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