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Technical Programme - Materials Research Society of Singapore ...

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ICMAT 2009 and IUMRS - ICA 2009 <strong>Technical</strong> <strong>Programme</strong><br />

attributed to compressive strain induced by the substrate.<br />

We demonstrate that the electronic structures <strong>of</strong> EG grown<br />

on Si- and C-terminated SiC substrates are quite different.<br />

We demonstrate that EG thermally grown on 6H-SiC(0001)<br />

can be p-doped via a novel surface transfer doping scheme<br />

<strong>of</strong> modifying the surface with the electron acceptor,<br />

tetrafl uoro-tetracyanoquinodimethane (F4-TCNQ)<br />

[9]. PES reveals that electron transfer from graphene<br />

to adsorbed F4-TCNQ is responsible for the p-type<br />

doping <strong>of</strong> graphene. This surface transfer doping scheme<br />

by surface modifi cation with appropriate molecular<br />

acceptors represents a simple and effective method to<br />

non-destructively dope EG for future nanoelectronics<br />

applications. Preliminary molecular self-assembly studies<br />

on EG will also be discussed.<br />

[1] K. S. Novoselov, A. K.Geim, S. V. Morozov, D. Jiang, M. I.<br />

Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov,<br />

Nature 438, 197 (2005).<br />

[2] Y. Zhang, Y.-W. Tan, H. L. Stormer, P. Kim, Nature 438, 201<br />

(2005).<br />

[3] C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D.<br />

Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P.<br />

N. First, W. A. de Heer, Science 312, 1191 (2006)<br />

[4] W. Chen, H. Xu, L. Liu, X. Y. Gao, D. C. Qi, G. W. Peng, S.<br />

C. Tan, Y. P. Feng, K. P. Loh, A. T. S. Wee, Surf, Sci. 596, 176<br />

(2005).<br />

[5] S. W. Poon, W. Chen, E. S. Tok, A. T. S. Wee, Appl. Phys. Lett.<br />

92, 104102 (2008).<br />

[6] H. Huang, W. Chen, S. Chen, A. T. S. Wee, ACS Nano 2, 25<br />

(2008)<br />

[7] X. Y. Gao, S. Chen, T. Liu, W. Chen, A. T. S. Wee, T. Nomoto, S.<br />

Yagi, K. Soda, J. Yuhara, Phys. Rev. B 78, 201404 (2008).<br />

[8] Z. H. Ni, W. Chen, X. F. Fan, J. L. Kuo, T. Yu, A. T. S. Wee, Z.<br />

X. Shen, Phys. Rev. B 77, 115416 (2008).<br />

[9] W. Chen, S. Chen, D. C. Qi, X. Y. Gao, A. T. S. Wee, J. Am.<br />

Chem. Soc. 129, 10418 (2007).<br />

pg 36<br />

Plenary Lecture 4<br />

Wednesday, 1 July 2009<br />

08:30 – 09:15 hrs<br />

Level 2, Ballroom<br />

Chair:<br />

LIM Hock<br />

Temasek Lab, <strong>Singapore</strong><br />

Sir John B. PENDRY<br />

FRS, The Blackett Laboratory, Imperial College, UK<br />

Metamaterials, Non Linear Plasmonic Phenomena and<br />

Negative Refraction at Optical Frequencies<br />

Negative refraction is a new phenomenon in optics that<br />

gives access to many remarkable possibilities. Perhaps<br />

the most remarkable <strong>of</strong> these is the prescription for<br />

focussing light with resolution limited only by precision <strong>of</strong><br />

manufacture, not by intrinsic physics. Demonstrations have<br />

been made for microwaves and even at optical frequencies<br />

but the latter are so far confi ned to very small distances <strong>of</strong><br />

less than a micron. Here we propose a scheme designed<br />

to give negative refraction <strong>of</strong> light on everyday length<br />

scales. The scheme exploits the link between negative<br />

refraction and phase conjugation which can be represented<br />

as a transition between positive and negative frequency<br />

states, but requires non linearity. Metamaterials are ideally<br />

placed to enhance and exploit non linear phenomena. The<br />

sub wavelength structures that comprise metamaterials<br />

will typically concentrate the energy <strong>of</strong> incident radiation<br />

in a very small volume and this in turn leads to substantial<br />

enhancement <strong>of</strong> non linear effects. An experimental<br />

realisation is proposed and under ideal circumstances this<br />

lens can exhibit sub wavelength resolution limited only by<br />

the strength <strong>of</strong> the phase conjugated signal.

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