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(Microsoft PowerPoint - Acad\351mie_08.ppt [Lecture seule])

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• Magnetic Tunnel Junctions,Tunneling Magnetoresistance (TMR)ferromagneticelectrodesJullière, 1975,low T, hardlyreproducible≈ 0.1 µmPLow resistance statetunnelingbarrier(insulator)~ 100 nmAPHigh resistance stateMoodera et al, 1995, Miyasaki et al,1995, CoFeCoFe/Al/Al2O3/CoCo, MR ≈3030-40%Applications: - read heads of Hard Disc Drive- M-RAM (Magnetic Random Access Memory)MRAM: density/speed ofDRAM/SRAM +nonvolatilty + lowenergy consumption

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