(Microsoft PowerPoint - Acad\351mie_08.ppt [Lecture seule])

MzRegime of irreversible magnetic switchingFirst experiments on pillars:Cornell (Katine et al, PRL 2000)CNRS/Thales (Grollier et al, APL 2001)IBM (Sun et al, APL 2002)Py/Cu/Py 50nmX150nm (Boulle, AF et al)14,60.10.0-0.1H=7 OeRTAP-1.0-0.50.0Mx0.51.0m-1.0AP stateof mP1.00.50.0-0.5550000MyGaMnAs/InGaAs/GaMnAstunnel junction (MR=150%)(Elsen, AF et al, PR B 2006)30 KMP stateof mdV/dI (Ω)14,514,4Py = permalloyAPP-2 0I (m A)Resistance (Ω)500000450000400000typical switching current ≈ 10 7 A/cm 2switching time can be as short as 0.1 ns (Chappert et al)-1.0x10 5 -5.0x10 4 0.0 5.0x10 4 1.0x10 5Current density (A.cm -2 )1 x 10 5 A/cm 2