(Microsoft PowerPoint - Acad\351mie_08.ppt [Lecture seule])

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$(Microsoft PowerPoint - Lanzarote - Les origines de l'arch\351ologie ...$

Spin injection/extraction at a Semiconductor/FM interfaceNM =semiconductorFMN MFMl s fl sfzE F↑E F↓Current SpinPolarization(J -J ↑ ↓ )/(J ↑ +J ↓ )Spin accumulation∆µ= E -E F↑ F↓spin dependent. interf.resist. (ex:tunnel barrier)Spin dependent drop of theelectro-chemical potentialDiscontinuity increases thespin accumulation in NMre-balanced spin relaxationsin F and NME F↑E F↑*Nrb≈ rN= ρ N lsfRasbah, PR B 2000e -extension of the spinpolarizedcurrent into thesemiconductorA.F-Jaffrès, PR B 2001
Concept du transfert de spin (Slonczewski 1996)SF 1F 2≈ 0.1 µmComposantetransverseLa composante transverse du spin est perdue par lesélectrons du courant, mais est en fait transférée auSPIN global S de la couche rotation de SS
Page 3 and 4: Mixing impurities A and B with oppo
Page 5 and 6: •Multicouches magnétiquesFeCrFeC
Page 7 and 8: •Multicouches magnétiquesAimanta
Page 9 and 10: • Magnetoresistance Géante (GMR)
Page 11 and 12: • Magnetoresistance Géante (GMR)
Page 13 and 14: • Enregistrement magnétique: év
Page 15 and 16: Analyse biologique« biochips »que
Page 17 and 18: 1)Epitaxial magnetic tunnel junctio
Page 19 and 20: Transfert de spin(renversement d’
Page 21 and 22: Co/Cu: Current in Plane (CIP)-GMR(M
Page 23: Spin injection/extraction at a Semi
Page 27 and 28: Experiments on pillarsAuFree ferroC
Page 29 and 30: Regime of steady precession (microw
Page 31 and 32: Application du transfert de spin: c
Page 33 and 34: Synchronization of STOsSynchronizat

(Microsoft PowerPoint - Acad\351mie_08.ppt [Lecture seule])

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