ATTIVITA' SCIENTIFICA DEL PROF - Dipartimento di Fisica
ATTIVITA' SCIENTIFICA DEL PROF - Dipartimento di Fisica
ATTIVITA' SCIENTIFICA DEL PROF - Dipartimento di Fisica
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'On the influence of the deposition con<strong>di</strong>tions on the carrier lifetime in hydrogenated and<br />
chlorinated silicon films.'<br />
Journ. Non-Cryst. Solids, 77-78, 675 (1985)<br />
H.Kiess, V.Augelli, R.Murri<br />
'Carrier lifetime from transient photoconductivity measurements on microcrystalline silicon<br />
films.'<br />
Thin Solid Films, 141, 193 (1986)<br />
V.Augelli, G.Dilecce, R.Murri, L.Schiavulli<br />
'Field effects measurements in hydrogenated and chlorinated amorphous silicon films.'<br />
Journ. Non-Cryst. Solids, 77-78, 303 (1985)<br />
V.Augelli, M.Leo, R.A.Leo, G.Soliani<br />
'Analytical determination of the density of state <strong>di</strong>stribution in amorphous semiconductors.'<br />
Phys. Rev. B, 33, 7392 (1986)<br />
V.Augelli, R.Murri, L.Schiavulli<br />
'The density of states in the mobility gap of amorphous silicon films computed by a new<br />
analytical method.'<br />
Il Nuovo Cimento, 10D, 237 (1988)<br />
V.Augelli, T.Ligonzo, R.Murri, L.Schiavulli<br />
'Photoconductivity in doped microcrystalline Si:H,Cl films.'<br />
Journ. Appl. Phys., 59, 2863 (1986)<br />
V.Augelli, V.Berar<strong>di</strong>, R.Murri, L.Schiavulli<br />
'Evaluation of density of states <strong>di</strong>stribution in amorphous silicon films by photoconductivity<br />
measurements.'<br />
Journ. Non-Cryst. Solids, 90, 123 (1987)<br />
V.Augelli, V.Berar<strong>di</strong>, R.Murri, L.Schiavulli, M.Leo, R.A.Leo, G.Soliani<br />
'Analytical determination of the density of gap states <strong>di</strong>stribution in amorphous<br />
semiconductors: experimental results.'<br />
Phys. Rev. B, 35, 614 (1987)<br />
V.Augelli, V.Berar<strong>di</strong>, R.Murri, L.Schiavulli<br />
'Photoconductivity measurements as a tool for the evaluation of the density of states in<br />
amorphous silicon.'<br />
Physica Scripta, 38, 188 (1988)<br />
V.Augelli, R.Murri and L.Schiavulli<br />
'The density of states in the mobility gap of halogenated amorphous silicon'<br />
Il Nuovo Cimento, 11D, 827 (1989).<br />
T.Ligonzo, R.Murri, V.Augelli, L.Schiavulli<br />
'Density of states in a-Si:H,Cl determined by Space-Charge-Limited Currents.'<br />
Thin Solid Films, 158, 217 (1988)<br />
V.Augelli, T.Ligonzo, R.Murri, L.Schiavulli<br />
'Photovoltaic characterization of a-Si:H,Cl films.'<br />
Thin Solid Films, 170, 163 (1989)<br />
V.Augelli, R.Murri, M.Nowak<br />
'Interference photoconductivity and photoelectromagnetic effect in amorphous silicon.'<br />
Phys. Rev. B, 39, 8336 (1989)<br />
V. Augelli and M. Nowak,<br />
'Distribution of ra<strong>di</strong>ation intensity in a thin semiconductor film on a thick substrate.'
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